field effect transistors - universitas brawijaya2014/09/06  · mosfet - metal oxide semiconductor...

EE314

IBM/Motorola Power PC620

IBM Power PC 601

Motorola MC68020

Field EffectTransistors

Chapter 12: Field Effect Transistors

1.Construction of MOS2.NMOS and PMOS3.Types of MOS 4.MOSFET Basic Operation5.Characteristics

The MOS Transistor

Polysilicon Aluminum

JFET – Junction Field Effect Transistor

MOSFET - Metal Oxide Semiconductor Field Effect Transistor

n-channel MOSFET (nMOS) & p-channel MOSFET (pMOS)

The MOS Transistor

n+n+

p-substrate

Field-Oxide

(SiO2)

p+ stopper

Polysilicon

Gate Oxide

DrainSource

Gate

Bulk Contact

CROSS-SECTION of NMOS Transistor

Switch Model of NMOS Transistor

Gate

Source

(of carriers)

Drain

(of

carriers)

| VGS |

| VGS | < | VT | | VGS | > | VT |

Open (off) (Gate = ‘0’) Closed (on) (Gate = ‘1’)

Ron

Switch Model of PMOS Transistor

Gate

Source

(of carriers)

Drain

(of carriers)

| VGS |

| VGS | > | VDD – | VT | | | VGS | < | VDD – |VT| |

Open (off) (Gate = ‘1’) Closed (on) (Gate = ‘0’)

Ron

MOS transistors Symbols

D

S

G

D

S

G

G

S

D D

S

G

NMOS Enhancement NMOS

PMOS

Depletion

Enhancement

B

NMOS with

Bulk Contact

Channel

JFET and MOSFET Transistorsor

L = 0.5-10 mmW = 0.5-500 mm

SiO2 Thickness = 0.02-0.1 mm

Device characteristics depend on L,W, Thickness, doping levels

Symbol

MOSFET Transistor Fabrication Steps

Building A MOSFET Transistor Using Silicon

http://micro.magnet.fsu.edu/electromag/java/transistor/index.html

It is done. Now, how does it work?

n-channel MOSFET Basic Operation

Operation in the Cutoff region

Schematic

pn junction: reverse bias

iD=0

for vGS<Vt0

When vGS=0 then iD=0 until vGS>Vt0 (Vt0 –threshold voltage)

n-channel MOSFET Basic Operation

Operation in the Triode Region

For vDS<vGS-Vt0 and vGS>Vt0 the NMOS is operating in the triode region

Resistor like characteristic(R between S & D, Used as voltage controlled R)

For small vDS, iD is proportional to the excess voltage vGS-Vt0

n-channel MOSFET Basic Operation

Operation in the Triode Region

2

02 DSDStGSD vvVvKi

2

KP

L

WK

Device parameter KP for NMOSFET is 50 mA/V2

n-channel MOSFET Basic Operation

Operation in the Saturation Region (vDS is increased)

Tapering of the channel- increments of iD are smaller when vDS islarger When vGD=Vt0 then the channel

thickness is 0 and

2

0tGSD VvKi

n-channel MOSFET Basic Operation

Example 12.1

An nMOS has W=160 mm, L=2 mm, KP= 50 mA/V2 and Vto=2 V.

Plot the drain current characteristic vs drain to source voltage

for vGS=3 V.

2

KP

L

WK

2

02 DSDStGSD vvVvKi

2

0tGSD VvKi

n-channel MOSFET Basic Operation

Characteristic

2

DSD Kvi

Example 12.1

Channel lengthmodulation

id depends on vDS in saturation region

(approx: iD =const in saturation region)

p-channel MOSFET Basic Operation

It is constructed by interchanging the n and p regions of n-channel MOSFET.

SymbolCharacteristic

How does p-channel MOSFET operate?-voltage polarities-iD current-schematic