fmd: silicon detectors new ideas on electronics
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FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 1
FMD: Silicon detectorsNew ideas on electronicsFMD: Silicon detectorsNew ideas on electronics
FWD meeting, CERN, 17 September 2002Børge Svane Nielsen
Niels Bohr Institute
1. News from Si detector producers2. New ideas on read-out electronics3. Price update on FE electronics
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 2
FMD ring layoutFMD ring layout
256
Inner:
Rin=4.2 cm
Rout=17.2 cm
Outer:
Rin=15.4 cm
Rout=28.4 cm
20x2x128=5120
10x2x256=5120
128Full FMD =Full FMD = 3 inner rings +3 inner rings + 2 outer rings2 outer rings
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 3
Ring assemblyRing assembly
Si detector
FEE
Hybrid
Support
Honeycomb?
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 4
Size limitationsSize limitationsInner segment Outer segment
143.68 mm145.81 mm
150 mmwafer
Hamamatsu: active max diameter 133.8 mmMicron: max 140 mm, but may extend beyond in 4 ”corners”ST: max 134 mm diameter
May be forced to some design modifications in 4 ”corners”
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 5
Price quotesPrice quotes
Hamamatsu:Hamamatsu:
Micron Semiconductors:Micron Semiconductors:
ST Microelectronics:ST Microelectronics: For 500 m thick detectors:price indication: 600-700 $ per segmentplus ”some” design cost
design inner segment: 51.0 k€3 prototypes (inner): 11.8 k€design outer segment: 51.5 k€3 prototypes (outer): 11.8 k€production (100 pc): 154.8 k€ 280.9 k€ = 420 kCHF
design inner segment: 15.0 k£design outer segment: 15.0 k£silicon masks: 10.0 k£10++ prototypes: 35.0 k£production (100 pc): 100.0 k£ 175.0 k£ = 408 kCHFmounting & bonding: 50 k£ = 116 kCHF !!
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 6
FMD electronicsFMD electronics
Segments(wafers)
Phi sectorsRadial strips
HybridsChips/Hybrid
FE Chips FE Channels
Si 1 inner 10 20 256 10 16 160 5,120
Si 1 outer 20 40 128 20 8 160 5,120
Si 2 inner 10 20 256 10 16 160 5,120
Si 2 outer 20 40 128 20 8 160 5,120
Si 3 inner 10 20 256 10 16 160 5,120
Total system 70 140
70
720 25,600
Cable function#
linesCable type
# cables for inner ring
# cables for outer ring
FE controls 10 Shielded twisted pair 2 2
Analog data out 1 Shielded twisted pair 20 20
FE power 4 Shielded twisted pair 20 (or 10?) 20
Bias voltage 1 ?? 10 20
FMD channel count:
Tentative FMD cable count:
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 7
Inner Si sensorInner Si sensor
256 strips
2 sectors
VA-32 preamp+shaper
Connector
Multiplexed read-out: 256 ch => 25 sec read-out time
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 8
Hybrid with Viking chipsHybrid with Viking chips
VA preamp+shaper: 32 ch
Connector(s) forpower, control, read-out
Other components
Other components
Hybrid cards must contain: VA chips Power distribution/regulation Gate/strobe distribution Read-out control and clock Monitoring Bias voltage
Read-out architecture choice:1. Analog signals to ”shoe-boxes” (like SSD): long analog cables2. ADC on/near hybrids (like TPC): short analog, very long digital cables
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 9
Reminder: VA architectureReminder: VA architecture
32/64/128input channels
Strobe from LVL1 trigger
Analog mux out 10 MHz
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 10
Analog read-out architecture
Analog read-out architecture
Copy Belle or SSD:
Disadvantages: Long cables with analog signals: need buffer amp Find space for ”shoe-boxes” Probably substancial modifications of HALNY modules DCS separate architecture
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 11
TPC FEE architectureTPC FEE architecture
http://ep-ed-alice-tpc.web.cern.ch/ep-ed-alice-tpc/
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 12
ALTRO Layout and PackageALTRO Layout and Package
Data Memory1K x 40
ProcessingLogic 2.5 m (ST)
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 13
ALICE TPC READOUT CHIP – Principle
ALICE TPC READOUT CHIP – Principle
16-ch signal digitizer and processor• HCMOS7 0.25 m (ST)• area: 64 mm2• power: 16 mW / ch• prototype delivery: Feb 02• 300 samples fully tested• delivery of 40,000 chips: Dec 02• cost: 5 SFr / ch
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 14
ALTRO Chip – ADC ResolutionALTRO Chip – ADC Resolution
Integrated ADC better than external version!
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 15
FMD read-out based on ALTRO
FMD read-out based on ALTRO
Can we use ALTRO as ADC in the FMD read-out, based on VA preamp-shaper chips ?
Yes, probably (needs some testing): run one VA mux output into one ALTRO input at 10 MHz use ALTRO as a pure ADC (forget the processor capabilities) store event in ALTRO digital memory
Advantages: Very short cables with analog signals ADC and event buffer directly on FMD detector Transmit digital data directly to DAQ We can make a simplified TPC read-out system DCS and trigger integral part of system
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 16
TPC read-out architectureTPC read-out architecture
Loc
al
Con
trol
ler
DD
L - IN
TSlow
-Control
Interface
TTC-RX
BOARDCTRL
RCU
Slow – Control(1 Mbit – serial link)
Detector Link(100 MB / s)
(#216)
COUNTING ROOM
1
2
25
Each TPC Sector is served by 6 Readout Subsystems
Front-end bus(160 MB / sec)
LocalSlow- Control
Serial link
ON DETECTOR
Overall TPC: 4356 Front End Cards 216 Readout Control Units
FEC128 ch
DataCompr.
FEC128 ch
FEC128 ch
PASA – ADC – DIG.
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 17
New FMD read-out architecture
New FMD read-out architecture
Loc
al
Con
trol
ler
DD
L - IN
TSlow
-Control
Interface
TTC-RX
BOARDCTRL
“RCU”
Slow – Control(1 Mbit – serial link)
Detector Link(100 MB / s)
(#216)
COUNTING ROOM
Each FMD (half)ring is separate Readout Subsystem
Analog serial link(10 MHz)
Local Read-out andSlow- Control
link
ON DETECTOR
Overall FMD: 70 Segments (hybrid cards) 5 or 10 Readout Control Units
Segment256/512 ch
ALTRO.
Segment256/512 ch
Segment256/512 ch
VA
Strongly inspired by TPC read-out, the FMD read-out could look like this:
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 18
Read-out channel countRead-out channel count
segmentsFE
channelsVA chips
ALTRO chips
VA chip / ALTRO channel
Read-out time
Inner ring 10 5,120 1602
10
8
1
25-50 s
3-6 s
Outer ring 20 5,120 160
2
10
20
8
1
1
25-50 s
3-6 s
3-6 s
We only need 1 ALTRO per ring to stay within 100 s read-out of TPCBut: modularity suggests at least 1 RCU per half ringand: by adding more ALTRO in RCU, we get fast read-out
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 19
Electronics costElectronics cost
IDEAS:IDEAS: VA modification+prototype: 55 k€VA production: 90 k€ ?hybrid design: 20 k€hybrid production: 30 k€ ?test equipment: 10 k€ 205 k€ = 300 kCHF
””RCU”:RCU”: board design and tests: in house - where?ALTRO chips: 5 k€board production (10 pc): 10 k€ 16 k€ = 24 kCHF + design
DAQ:DAQ:
DCS:DCS:
RORC: ?other: ?
power supplies: ?monitoring: ?
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 20
ConclusionsConclusions
Si strip sensors are squeezed in 4 ”corners” by effective wafer size cut some acceptance? Quotations from 2 out of 3 known suppliers suggest price 400 kCHF Need more quotes on mounting & bonding – could be > 100 kCHF
Si strip sensors:Si strip sensors:
Electronics:Electronics:
FE electronics based on VA amplifiers still preferred BE layout has developed towards a simplified version of TPC proof of principle needed soon Price of electronics estimated at 300 kCHF (FE) + 50 kCHF (BE)
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