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○c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C
For Muting (20V, 0.3A) 2SD2704K
Features Dimensions (Unit : mm) 1) High DC current gain.
hFE = 820 to 2700 2) High emitter-base voltage.
VEBO = 25V (Min.) 3) Low Ron
Ron= 0.7 (Typ.) Structure Epitaxial planar type NPN silicon transistor Packaging specifications
Package
Code T146
3000
Taping
Basic orderingunit (pieces)
2SD2704K
Type
Absolute maximum ratings (Ta=25C)
Parameter
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
50 V
V
V
A
W
°C
°C
20
25
0.3
0.2
150
−55 to +150
Symbol Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature Electrical characteristics (Ta=25C)
Parameter Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
fT∗Cob
Min.
50
20
25
−
−
−
−
−
−
−
−
−
−
50
35
3.9
−
−
−
0.1
0.1
100
−
−
V IC=10μA
IC=1mA
IE=10μA
VCB=50V
VEB=25V
IC/IB=30mA/3mA
VCE=6V, IE= −4mA, f=10MHz
VCB=10V, IE=0A, f=1MHz
V
V
μA
μA
hFE 820 − 2700 VCE=2V, IC=4mA−
mV
MHz
pF
Ron − 0.7 − IB=5mA, Vi=100mV(rms), f=1kHzΩ
Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Output On-resistance
∗ Measured using pulse current
(2) (1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95 0.95
0.8
0.15
0.3M
in.
1.1
2SD2704K
(1) Emitter(2) Base(3) Collector
ROHM : SMT3EIAJ : SC-59 Abbreviated symbol : XL
Each lead has same dimensions
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○c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C
Data Sheet 2SD2704K
Electrical characteristic curves
0 0.2 0.4 0.6 0.8 1 1.20.1
0.1
10
100
1000
CO
LLE
CT
OR
CU
RR
EN
T :
IC (m
A)
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
Fig.1 Grounded emitter propagation characteristics ( Ι )
VCE=2V
25°C
−40°C
Ta=125°C
CO
LLE
CT
OR
CU
RR
EN
T :
IC (m
A)
Fig.2 Grounded emitter propagation characteristics ( ΙΙ )
0 0.2 0.4 0.6 0.8 1 1.20.1
0.1
10
100
1000
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
VCE=6V
25°C
−40°C
Ta=125°C
1 10 100 100010
100
1000
10000
Ta= −40°C
Ta=25°C
Ta=125°C
DC
CU
RR
EN
T G
AIN
: hF
E
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current ( )
VCE=2V
DC
CU
RR
EN
T G
AIN
: hF
E
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( )
1 10 100 100010
100
1000
10000
Ta= −40°C
Ta=25°C
Ta=125°C
VCE=6V
1 10 100 10001
100
10
1000
10000
Ta= −40°C
Ta=25°C
Ta=125°C
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation voltage vs. collector current ( )
IC/IB=10/1
CO
LLEC
TOR
SAT
UR
ATIO
N V
OLT
AGE
: VC
E(sa
t) (m
V)
1 10 100 10001
100
10
1000
10000
Ta= −40°C
Ta=25°C
Ta=125°C
COLLECTOR CURRENT : IC (mA)
IC/IB=20/1
CO
LLEC
TOR
SAT
UR
ATIO
N V
OLT
AGE
: VC
E(sa
t) (m
V)
Fig.6 Collector-emitter saturation voltage vs. collector current ( )
1 10 100 10001
100
10
1000
10000
Ta= −40°C
Ta=25°C
Ta=125°C
COLLECTOR CURRENT : IC (mA)
IC/IB=50/1
CO
LLEC
TOR
SAT
UR
ATIO
N V
OLT
AGE
: VC
E(sa
t) (m
V)
Fig.7 Collector-emitter saturation voltage vs. collector current ( )
Fig.8 Base-emitter saturation voltage vs. collector current ( )
1 10 100 1000100
1000
10000
Ta= −40°C
Ta=25°CTa=125°C
COLLECTOR CURRENT : IC (mA)
IC/IB=10/1
BA
SE
SA
TU
RA
TIO
N V
OLT
AG
E :
VB
E(s
at) (m
V)
Fig.9 Base-emitter saturation voltage vs. collector current ( )
COLLECTOR CURRENT : IC (mA)
BA
SE
SA
TU
RA
TIO
N V
OLT
AG
E :
VB
E(s
at) (m
V)
1 10 100 1000100
1000
10000
Ta= −40°C
Ta=25°CTa=125°C
IC/IB=20/1
3/3 www.rohm.com
○c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C
Data Sheet 2SD2704K
Fig.10 Base-emitter saturation voltage vs. collector current ( )
COLLECTOR CURRENT : IC (mA)
BA
SE
SA
TU
RA
TIO
N V
OLT
AG
E :
VB
E(s
at) (m
V)
1 10 100 1000100
1000
10000
Ta= −40°C
Ta=25°CTa=125°C
IC/IB=50/1
Fig.11 Gain bandwidth product vs. emitter current
1 10 1001
10000Ta=25°Cf=50MHzIE=0A
EMITTER CURRENT : IE (mA)
TR
AN
SIT
ION
FR
EQ
UE
NC
Y :
fT (M
Hz)
Fig.12 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
CO
LLE
CT
OR
OU
TP
UT
CA
PA
CIT
AN
CE
: C
ob (
pF)
EM
ITT
ER
IN
PU
T C
AP
AC
ITA
NC
E :
Cib
(pF
)
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
1 10 1000.1
1
10
100Ta=25°Cf=1MHzIE=0A
0.01 0.1 1 100100.1
1
100
10
Fig.13 Output-on resistance vs. base current ( )
Ta= 25°C
See Fig.15
ON
RE
SIS
TA
NC
E :
Ron
(Ω
)
BASE CURRENT : IB (mA)
0.01 0.1 1 100100.1
1
100
10
Fig.14 Output-on resistance vs. base current ( )
Ta= 25°C
See Fig.16
ON
RE
SIS
TA
NC
E :
Ron
(Ω
)
BASE CURRENT : IB (mA)
Ron measurement circuit
Ron= ×RLv0
v0
vi−v0
RL=1kΩ
IB
OutputInput
100mV(rms)1V(rms)f=1kHz
Vi V
Fig.15 Ron measurement circuit ( )
Ron= ×RLv0
v0
vi−v0
RL=1kΩ
IB
OutputInput
100mV(rms)1V(rms)f=1kHz
ViV
Fig.16 Ron measurement circuit ( ) This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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