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THE INSTITUTE OF ELECTRONICS, TECHNICAL REPORT OF IEICE INFORMATION AND COMMUNICATION ENGINEERS WPT2012-53 (2012-03)
This article is a technical report without peer review, and its polished and/or extended version may be published elsewhere.
GaN SBD
E-mail: ohno@ee.tokushima-u.ac.jp

SBD
↓
GaN SBD 2.45GHz
GaN SBD
GaN SBD Rectenna Circuit with Higher-Harmonics Rejection Filter K. Hayashino, H. Kume, K. Fukui, Y. Iwasaki, J. -P. Ao and Y. Ohno
Institute of Technology and Science, The University of Tokushima,
2-1 Minami-Josanjima, Tokushima 770-8506, Japan
E-mail: ohno@ee.tokushima-u.ac.jp
Abstract Inserting a higher-harmonics rejection filter in rectenna circuits, the reflected signal contains only the fundamental-mode. Then, the impedance matching becomes easy allowing the complete suppression of the reflection. Circuit simulation results indicated that the rectenna circuits look like the parallel connection of the junction capacitance of the SBD and load resistance. The parameters did not vary so largely that the matching operation is stable. Also, the filter characteristics did not largely affect the parameters. The technique is applied to GaN SBD rectenna circuits and confirmed that the reflection suppression at any load resistance values.
Keyword Rectenna Circuit, Higher-Harmonics Rejection Filter, Impedance Matching, GaN SBD, Reflection Suppression
.1 ↓


DC



[1]
L C
↓



GaN
(SBD)


Z=0 Z= /4
Z=0

DC


DC


Microwave Office(MWO)


) A)
) B)
LPF 2

S

S A)
B) S MWO
S
SBD P P
GaN SBD (IS=3e-13mA, RS=7.2 , CJ0=0.19pF, VJ=1V, N=1.5, M=0.28 )[2]
(1mF)
2.45GHz 1W
1~16 a

Cj0 1/2
4(b)↓

10W 0.1W
C-V
S
5

1W


[3]
↓


RLOADC


-68-

1.27mm
AD1000 10.6= tan=0.0023@10GHz

DC 100pF
GRM1882-C2A-101JA01D) /4
5
A

7
2m×100m
RON=0.675VF=1.17V1MHz
C j0=3.96pF
1 16

.4 8
Agilent E8364B
VNA VNA Port 1 (40dB, Mini-Circuits ZHL-16W-43-S+)
-1
0
1
(a)

RLOAD nCj0/2



40
60
80
100
-
DC (DIODE) (f=2.45GHz)
-69-
% -20dB

1%
VNA Port 2 VNA
S21 S11
VNA
/4
/4
VNA DC
Agilent U2722
2





.5 9

2 -20dB
3 -10dB4 -15dB

10
S11 11 P IN PREF
DC PDC DIODE
REFRF/DC TOTAL

10
60 1.4 11
S
150
11
11

REFRF/DC TOTAL 12
13
20↓
(1)
(2)
7 GaN SBD ( ( 8 (2m×100m)
Substrate
n-GaN

-50
-40
-30
-20
-10
0

,60 ,80
RF/DC


RF/DC 56.6%
0.25W
1.17V
5V
DC 35V

0.25W


0%
20%
40%
60%
80%

12 REF RF/DC TOTAL

20150

/4
-0.1
-0.05
0
0.05
0.1
SRE
GaN SBD
20150




↓



Insulating Plate Using Open-Ring Resonator Coupling and GaN Schottky Diode, ” IMWS-IWPT 2011, May 12-13, 2011 – Uji (Kyoto), Japan, IWPT2-2 (2011)
[2] K. Fukui, Taro Takeuchi, K. Hayashino, K.Harauchi,
Y. Iwasaki, J-P Ao, and Y. Ohno, "T-shaped Anode GaN Schottky Barrier Diode for Microwave Power Rectification," IMWS-IWPT 2012, FRI-F-23, Kyoto, Japan (2012)
[3] K. Hayashino, K.Harauchi, Y. Iwasaki, K. Fukui, J-P
Ao, and Y. Ohno, "Analysis of Loss Mechanism in Rectenna Circuit with GaN Schottky Barrier Diode," IMWS-IWPT 2012, FRI-E-2, Kyoto, Japan (2012)
0%
20%
40%
60%
80%

14 RF/DC TOTAL


-72-