high performance photodetectors based on … performance photodetectors based on graphene and other...

High performance photodetectors based on graphene and other 2D materials

1. OPTIMUS, Photonics Centre of Excellence, School of Electrical and Electronic EngineeringTechnological University, 50 Nanyang Avenue, 639798, Singapore

2. Centre for Disruptive Photonic Technologies, Nanyang Technological University, 21 Nanyang Link, 63737, Singapore

Abstract

Graphene and other 2D materials have attracted tremendous attention thanks to their extraordinary electronic and optical properties, accommodating a large potential in modern optoelectronic applications such as photodetection. Graphene is considered as a broadband photodetector, however, suffering group, nanostructured graphene (graphene quantum dots and nanoribbons) were employed to enhance the photoresponsivity of graphene based photodetector. based on photoconductive mode operation remains big challenges in further applications. Here, we demonstrated the photovoltaic mode operation in graphene peffective electron irradiation method exhibit a high detectivity of ~ 3×10

10

On the other hand, metal dichalcogenides and black phosphorene with strong inout-of-plane interactions open up new opportunities for 2D materials for optoelectronic applications. Single crystal 1T phase Tin Diselenide (SnSeAtomically layered SnSe2 field-effect transistors displayed a high responsivity (0.5 A/W) and response time (~2 ms) in the visible range. Few layer black phosphorene pwas also demonstrated as a promising material and metal dichalcogenides.

Figure 1. Photodetector based on graphene nanoribbon (a), graphene p(c) and few layer black phosphorene (d).

High performance photodetectors based on graphene and other 2D materials

Xuechao Yu1, Qi Jie Wang

1,2,

Excellence, School of Electrical and Electronic EngineeringTechnological University, 50 Nanyang Avenue, 639798, Singapore

Centre for Disruptive Photonic Technologies, Nanyang Technological University, 21 Nanyang Link,

qjwang@ntu.edu.sg

Graphene and other 2D materials have attracted tremendous attention thanks to their extraordinary electronic and optical properties, accommodating a large potential in modern optoelectronic applications such as photodetection. Graphene is considered as a suitable candidate for ultrafast and broadband photodetector, however, suffering from low light absorption and photoresponsivity. group, nanostructured graphene (graphene quantum dots and nanoribbons) were employed to enhance

f graphene based photodetector. The low detectivity of graphene photodetector based on photoconductive mode operation remains big challenges in further applications. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by

method that induces n-type doping in the intrinsic p-type graphene10

Jones.

On the other hand, metal dichalcogenides and black phosphorene with strong inplane interactions open up new opportunities for 2D materials for optoelectronic applications.

Single crystal 1T phase Tin Diselenide (SnSe2) was synthesized and exfoliated into single and few layers. ect transistors displayed a high responsivity (0.5 A/W) and response

time (~2 ms) in the visible range. Few layer black phosphorene p-n junction formed by chemical doping was also demonstrated as a promising material for IR photodetector and filled the gap between graphene

hotodetector based on graphene nanoribbon (a), graphene p-n junction, bilayer SnSes (c) and few layer black phosphorene (d).

High performance photodetectors based on graphene and other 2D materials

Excellence, School of Electrical and Electronic Engineering , Nanyang

Centre for Disruptive Photonic Technologies, Nanyang Technological University, 21 Nanyang Link,

Graphene and other 2D materials have attracted tremendous attention thanks to their extraordinary electronic and optical properties, accommodating a large potential in modern optoelectronic

suitable candidate for ultrafast and low light absorption and photoresponsivity. In our

group, nanostructured graphene (graphene quantum dots and nanoribbons) were employed to enhance The low detectivity of graphene photodetector

based on photoconductive mode operation remains big challenges in further applications. Here, we fabricated by a simple but

type graphene and

On the other hand, metal dichalcogenides and black phosphorene with strong in-plane and weak plane interactions open up new opportunities for 2D materials for optoelectronic applications.

) was synthesized and exfoliated into single and few layers. ect transistors displayed a high responsivity (0.5 A/W) and response

n junction formed by chemical doping between graphene

n junction, bilayer SnSes