incorporating various insertion devices into the nsls ii ... · planned insertion devices at nsls...

Incorporating Various Insertion Devices into the

NSLS II Storage Ring

April 1st, 2014 Prepared by: Charles Hetzel

Outline

Facility overview

Insertion device description

Installed devices

NEG coated chambers

Upcoming devices

Instrumented rf bellows

SR injection straight

1- Accelerator Tunnel

2- Experimental Floor

3 - 200MeV LINAC

4 - Booster (C=158m)

5 - RF Building, liquid He Plant

6 - Service Buildings

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2

3

4 5

6

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6 6

6

Facility Overview

Nominal energy: 3GeV

Nominal current: 500mA

30 cells (DBA) in 5 pendants

Ring circumference: 792m

Long straight section RF gate valve

Typical Cell Layout

S3 Dipole

S4 Multipole S5

Dipole

S2 Multipole

S6 Multipole

ID photon extraction

Dipole and 3PW photon extraction

3 pole wiggler (3PW)

Each section of the cell is composed of girders assemblies.

3 focusing and 2 bending segments (DBA). Alternating long and short straights (9.3m and 6.6m).

Photon extraction takes place at S3 and G6.

The ring is divided into 60 vacuum sections. Sectors can be isolated with RF gate valves. Design pressure (beam on): 10-9 torr.

Fast corrector

Short straight section RF gate valve

Planned Insertion Devices at NSLS II

Damping Wigglers (DW)

3 straight sections (6 devices total).

Narrow gap (11.5mm x 60mm) aluminum chamber.

NEG coated.

Elliptically Polarized Undulator (EPU)

1 straight section (2 devices total).

Narrow gap (8mm x 55mm) aluminum chamber.

NEG coated.

Flat wire correction coils on chamber.

In Vacuum Undulator (IVU)

4 straight sections.

Short (1.5m) and long (3m) devices.

Large removable side cover.

Damping Wiggler Straight Section

Space available in long straight: 8065mm.

Length of each chamber: 3775mm.

Internal aperture: 11.5mm x 60mm.

NEG coated chambers.

Installing and Baking the Chambers

Floor layout and prep

Stand installation

Survey stands

Grout stands and plates

Chamber installation

Chamber survey

Vacuum connections

Leak check

Bake out and activation

Resurvey chambers

Clear area for DWs

Test Data Supplied by Vendor

NEG Activation Profile

Initial Results

Base pressure after first activation was low 10-9 torr. (6 hr soak time)

Base pressure after second activation mid 10-10 torr. (No bleedup)

EDX of BPM blanks did not match coupon data supplied

* Normalized included oxygen @ 12%

Ultimate pressure no better then uncoated narrow gap chambers.

Chamber Ti Zr V

1* 25 16 47

2 0 0 0

3 31 16 53

4 28 15 56

Activation Test Preformed on Single Chamber

Temperature vs. Pressure Plot at Activation

Arrival at the Service Building

Transport through the tunnel

Device Installation Around Chambers

Device Installation Around Chambers

EPU Straight Section

Space available in short straight: 5359mm.

Length of chamber: 4891mm.

Internal aperture: 8.0mm x 55mm.

NEG coated chamber.

EPU Straight Section

Test Data Supplied by Vendor

Flat Wire Correction Coils

20 conductors with individual power supplies.

Dimensions:2mm x 0.2mm x 2100mm.

Max correction current: 3A.

EPU Insertion Device

1.5m IVU Straight Section

Two 1.5m devices installed in short straight.

Canting angle: 2mrad.

NEG cartridges (D3500 x 2) and ion pumps (150 l/s x 2).

1.5m IVU

Rectangular Side Port

Vendor Supplied Bake Out Equipment

Heater tapes used on chamber and bellows.

Hot water circulated magnet girders during ramp up.

Magnet girders cooled when necessary.

3m IVU Straight Section

Single device installed in short or long straight.

Two suppliers.

NEG cartridges (D3500 x 4) and IPs (200 l/s x 2) or TSP (3X) and IPs (200 l/s x 4).

3m IVU

Temperature Instrumented Bellows

Temperature Instrumented Bellows

Complications

Small gaps due to surface finish

Different material

Material plating

Surface contact pressure

Additional thermal resistance at each interface.

Temperature Instrumented Bellows

Temperature Instrumented Bellows

Storage Ring Injection Straight Section

Four pulsed magnets with ceramic chambers.

Vacuum sector includes part of BST line.

Multiple water cooled apertures to protect components from SR radiation.

Storage Ring Injection Straight Section

Roll mechanism to adjust level of ferrite during operations.

TSPs and ion pumps installed in spool pieces.

Storage Ring Flag

Multiple position to see the injected or single turn beam.

RF shielded when in parked position.

Bake Out and Conditioning

Bake out temperature limited due to delicate components.

Hot nitrogen gas used to heat internal surfaces of septum and ceramic chambers.

Linear bearings on SR flag could not exceed 80°C.

Additional bake out interlock on septum knife temperature and SR flag body.

Gas flow on branches was balanced using RAV on exit ports.

Nitrogen purge was only run attended during the day, static bake at night.

Current pressure: 2.5 e-10 torr.

Bake Out and Conditioning

Gas Inlet Gas Exit

Thank you for you attention!

Questions/Comments?