new techniques for determining electronic properties of nitrogen doped carbon nanospheres vincent...

New Techniques for Determining Electronic Properties of Nitrogen Doped Carbon

Nanospheres

Vincent Marsicano, Jonathan Keartland, William Wright, and Neil Coville

DST/NRF Centre of Excellence in Strong MaterialsSchool of Physics, WITS

School of Chemistry, WITS

Introduction Part 1• Carbon nanomaterials are of great scientific and

technological interest at present due to their wide applicability.

• Carbon nanospheres (CNS) were produced using a horizontal CVD reactor.

• CNS of known dopant level were characterized using Electron Paramagnetic Resonance (EPR)

• Nitrogen content of unknown samples was determined using an EPR spectrometer

Electron Magnetic Resonance• EMR (also known as ESR and EPR) experiment was

performed using the Bruker Spectrometer shown below. The experiment was performed in CW mode.

Horizontal CVD reactor

XPS Determination of N dopant

SDA = 0% NitrogenSDB = 0.4% NitrogenSDC = 2.5% NitrogenSDD = 5% Nitrogen

EPR spectra of three N-doped CNS obtained. Signal strength is based on many parameters, both of the spectrometer and the samples.

Samples are carefully weighed to calculate the number of paramagnetic sites present per gram of sample.

EPR Data of Selected Samples

Magnetic Field (G)

3450 3460 3470 3480 3490 3500 3510

EPR Spectrometer CalibrationEPR Spectrometer Calibration Curve

Nitrogen Concentration (%)

0 2 4 6

Arb

itra

ry U

nits

per

gra

m

0

500

1000

1500

2000

2500

3000

3500

4000

A Composite EPR spectrum of N-doped CNS sample (SDD) and the EPR reference standard (DPPH) that we used to determine the g-factor. Deconvolution of the two spectra allows one to determine the g value of the original signal.

Composite EPR Spectrum of SDD and DPPH

Magnetic Field

3410 3420 3430 3440 3450 3460 3470 3480 3490

• The g Value increases with increased nitrogen concentration.

Electron g Value vs Sample Nitrogen Concentration

Nitrogen Content (%)

-1 0 1 2 3 4 5 6

g V

alu

e

2.00260

2.00262

2.00264

2.00266

2.00268

2.00270

EPR Spectrometer Calibration

hν=gμB

• SD1 = C2H2 at 900oC for 2 hours.

• SD2 = C2H2 at 900oC for 1.5 hours.

• SD3 = Collected from quartz tube• SD4 = Collected from quartz boat

Unknown Sample Characterisation

• SD1 = 1.710% ± 0.503%• SD2 = 1.737% ± 0.509%• SD3 = 3.362% ± 1.101%• SD4 = 3.446% ± 0.986%

• SD1 = 2 hours.• SD2 = 1.5 hours.

• SD3 = quartz tube• SD4 = quartz boat

Unknown Sample Characterisation

Electron g Value vs Sample Nitrogen Concentration

Nitrogen Content (%)

-1 0 1 2 3 4 5 6

g V

alu

e

2.00255

2.00260

2.00265

2.00270

2.00275

2.00280

2.00285

SD1

SD2

SD3

SD4

Introduction Part 2• Determination of Electronic Transport Properties of

CNS are criticical to their deployment in industry.• Doping contributes significantly to the transport

properties of these materials. • Resistivity of the bulk CNS samples was determined

using the Van der Pauw technique.• Sample chambers were designed and built in-house with

the use of open source communities.

Open Source Technologies• Open Source technologies were extensively deployed in

the production of these results.

• The experiments were conducted with significant time and cost saving.

Slic3r

Van der Pauw Greek Cross Cell

Van der Pauw Square Cell

Hall Effect Cell

RepRap Ormerod Printer

Computer Controlled 4 Channel Physical Relay Multiplexer

VDP Results

0.0006

0.0007

0.0008

0.0009

0.001

0.0011

0.0012

50 100 150 200 250 300 350

Temperature Dependance of the Resistivity of Carbon Microspheres of Variying Nitrogen Dopant

Concentrations Determined with a Greek Cross Cell

SDDSDCSDBSDA

Resis

tivity (

Oh

m.m

)

Temperature (K)

Resistivity decreases with NitrogenDopant level.

Metal-Insulator transition likely caused by contacts.

VDP Results

0

0.0002

0.0004

0.0006

0.0008

0.001

0.0012

50 100 150 200 250 300 350

Temperature Dependance of the Resistivity of Carbon Microspheres of Variying Nitrogen Dopant

Concentrations Determined with a Square Cell

SDDSDCSDBSDA

Resis

tivity (

oh

m.m

)

Temperature (K)

Incraesing dopant level increases the semiconducting behaviour.

VRH and FIT likely models for conduction.

RH ≈ -1.1537e-07

Conclusions• N-doped CNS have been successfully produced using a

horizontal CVD reactor.• The nitrogen is strongly paramagnetic indicating that the nitrogen

is in substitutional sites• EPR can be used as a characterisation technique for determining

dopant level. • Open source technologies allow for substantial cost savings in

producing research. • Developing an MPRI “open source” community to improve

sharing of ideas and technologies is imperative to increase research output.

Acknowledgements

Thanks are due to the following:• DST/NRF CoE in Strong Materials, the School of

Physics for support.• School of Physics• Prof. Jonathan Keartland• Open Source Communities Mentioned