piezoelectric field-effect transistor for force and
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Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications
1Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric
Piezoelectric field-effect transistor for force and tactile
sensor applicationsH. Winterfeld1, L. Thormählen2, H. Lewitz2, E. Yarar2, T. Birkoben1, N. Niethe1,
A. Petraru1, N. Preinl1, H. Hanssen3, E. Quandt2 and H. Kohlstedt1
1Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, 24143 Kiel, Germany2Inorganic Functional Materials, Technische Fakultät, Christian-Albrechts-Universität zu Kiel,24143 Kiel, Germany3Fraunhofer-Institut für Siliziumtechnologie,25524 Itzehoe, Schleswig-Holstein, Germany
Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications
2Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric
http://mindtrans.narod.ru/hands/pictures/Smart_Motor_Hand.JPGDownloaded: 20.03.2019
P. Regtien, Sensors for Mechatronics, Elsevier (2012)
Kappassov et al., Elsevier, 74 (2015)
Piezoelectric
Piezoresistive Capacative
Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications
3Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric
p-type silicon
Sourcen+
Drainn+
SeedlayerOxide
Gate
Piezoelectric Layer
Pt
AlN
PtSiO2
F
I
Piezoelectric Field-Effect Transistor
Winterfeld et al., J. Mater Sci.: Mater Electron (2019)Yarar et al., AIP Adv. (2016)
Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications
4Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric
p-type silicon
Sourcen+
Drainn+
SeedlayerOxide
Gate
Piezoelectric Layer
Pt
AlN
PtSiO2
F
I
Piezoelectric Field-Effect Transistor
Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications
5Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric
! = #ℎ%12 ()*+ =
,-%3/!
)1+ = ,×(- − 5 67,+ =#ℎ96
;+ =1+67,+
moment of inertia deflection moment of bending section modulus
stress
L
b
h
point of clamping
F
Position of
transistor
on cantilever
x
Theoretical approach:
Wu et al., Appl. Phys. Let. 85, 7 (2004)
(Pa)
Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications
6Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric
p-type silicon
Source Drain
Piezoelectric Layer
p-type silicon
Source Drain
PtAlNPt
SiO2
Piezoelectric sample Referenz sample
F
Chargecompensation
Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications
7Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric
forc
e (N
)
time
0.34
0.67
1.00
0
F
Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications
8Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric
VG
VD
Lock-InAmplifier
magnet
cantilever
electromagnetwith steel core
1 MΩ
Function Generator
Frequency sync
Excitation signal:
0
16.5
forc
e (m
N)
Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications
9Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric
AlN
VG ΔI
Transfer
Yarar et al., AIP Adv. (2016)
Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications
10Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric
VG
AlN
VG ΔI
Transfer
Fichtner et al., J. Appl. Phys. (2017)Yarar et al., AIP Adv. (2016)
Field effect transistors with a piezoelectric AlN gate dielectric for force sensing applications
11Henning Winterfeld| MISFET based piezo-stress sensor with AlN gate dielectric
Thank you for your attention!
Furthermore, I would like to thank the DFG for their financial support in RU 2093 and
CRC 1261.Winterfeld et al., J. Mater Sci.: Mater Electron (2019)
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