pjm8205dnsg n-channel power mosfet · 2019. 8. 16. · pjm8205dnsg n-channel power mosfet 1 / 5...
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PJM8205DNSG N-Channel Power MOSFET
1 / 5www.pingjingsemi.com Revision:1.0 May-2019
Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified.
Parameter Symbol Maximum UnitsDrain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID 5 A
Pulsed Drain Current Note1 IDM 25 A
Power Dissipation PD 1.25 W
Junction and Storage Temperature Range TJ, TSTG 150, -55 to 150 °C
Thermal Characteristics
Parameter Symbol Typ. Units
Maximum Junction-to-Ambient Note2 RθJA 100 °C/W
⚫ Advanced trench process technology
⚫ High Density Cell Design For Ultra Low On-Resistance
⚫ High Power and Current handing capability
SOT-23-6
Schematic Diagram
Features
2
6
1
Gate1
Source1
Drain15
4
3
Gate2
Source2
Drain2
36 2
1
5
4
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PJM8205DNSG N-Channel Power MOSFET
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Parameter Symbol Conditions Min. Typ. Max. Units
Static Parameters
Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 20 -- -- V
Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V -- -- 1 µA
Gate-Body Leakage Current IGSS VDS=0V, VGS=±12V -- -- ±100 nA
Gate Threshold Voltage Note3 VGS(th) VGS=VDS, ID= 250µA 0.5 0.7 1.2 V
Static Drain-Source On-Resistance Note3
RDS(ON) VGS=2.5V, ID=4A -- 25 32 mΩ
VGS=4.5V, ID=5A -- 20 25 mΩ
Dynamic Parameters
Input Capacitance Ciss
VGS=0V, VDS=10V, f=1MHz
-- 550 -- pF
Output Capacitance Coss -- 125 -- pF
Reverse Transfer Capacitance Crss -- 64 -- pF
Switching Parameters
Total Gate Charge Qg
VGS=4.5V, VDS=10V, ID=5A
-- 9.5 nC
Gate Source Charge Qgs -- 2.1 nC
Gate Drain Charge Qgd -- 1.4 nC
Turn-On DelayTime tD(on)
VGS=4V, VDD=10V, ID=5ARGEN=10Ω
-- 9 ns
Turn-On Rise Time tr -- 10 ns
Turn-Off DelayTime tD(off) -- 32 ns
Turn-Off Fall Time tf -- 24 ns
Source-Drain Diode Parameters
Body Diode Forward Voltage VSD IS=5A, VGS=0V -- 0.8 1.2 V
Body Diode Continuous Source Current IS -- -- 5 A
Notes: 1. Repetitive rating: pulsed width limited by maximum junction temperature.
3. Pulse width ≤ 300μs, duty cycle ≤ 2%
Electrical Characteristics TC =25℃ unless otherwise specified.
Forward Transconductance Note3 gFS VDS=5V, ID=5A -- 10 S--
--
--
--
--
--
--
--
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
www.pingjingsemi.com Revision:1.0 May-2019
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PJM8205DNSG N-Channel Power MOSFET
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TJ-Junction Temperature(℃) Power Dissipation
Vds Drain-Source Voltage (V) Output Characteristics
TJ-Junction Temperature(℃) Drain Current
ID- Drain Current (A) Drain-Source On-Resistance
P D
Pow
er(W
)
I D- D
rain
Cur
rent
(A)
R
dson
On-
Res
ista
nce(
mΩ
)
I D- D
rain
Cur
rent
(A)
Electrical Characteristics Curves
Vgs Gate-Source Voltage (V) Transfer Characteristics
TJ-Junction Temperature(℃) Drain-Source On-Resistance
I D- D
rain
Cur
rent
(A)
Nor
mal
ized
On-
Res
ista
nce
www.pingjingsemi.com Revision:1.0 May-2019
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PJM8205DNSG N-Channel Power MOSFET
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Vgs Gate-Source Voltage (V) Rdson vs Vgs
Qg Gate Charge (nC) Gate Charge
Vds Drain-Source Voltage (V) Capacitance vs Vds
Vsd Source-Drain Voltage (V) Source- Drain Diode Forward
Rds
on O
n-R
esis
tanc
e(mΩ
) Vg
s G
ate-
Sour
ce V
olta
ge (V
)
C C
apac
itanc
e (p
F)
I s- R
ever
se D
rain
Cur
rent
(A)
www.pingjingsemi.com Revision:1.0 May-2019
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PJM8205DNSG N-Channel Power MOSFET
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Package Outline
SOT-23-6 Dimensions in mm
www.pingjingsemi.com Revision:1.0 May-2019
R0.15MAX
`4X
0.127±
0.0
3
±0.0
1
A
R0.15MAX
`4X
1.26MAX
0.06
±0.0
5
12
10
0.65±
0.0
3
1. 1
±0.0
5
10
12
2.92
2.8
±0.
1
1.6
±0.
05
0.950.35
1.9
±0.05
Device Package Shipping PJM8205DNSG SOT-23-6 3000/Reel&Tape(7inch)
Ordering Information
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