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Sensors and actuators at NXP:
bringing more than Moore to CMOS
Joost van Beek
Senior Principal Scientist
Corporate R&D, NXP Semiconductors
Presented at the “International Symposium on Advanced Hybrid Nano Devices”
4-5 October, 2011, Tokyo Institute of Technology
COMPANY CONFIDENTIAL
2
NXP Semiconductors
NXP Semiconductors N.V. (NASDAQ: NXPI)
provides High Performance Mixed Signal and
Standard Product solutions that leverage its
leading RF, Analog, Power Management,
Interface, Security and Digital Processing
expertise.
Our innovations are used in a wide range
of automotive, identification, wireless
infrastructure, lighting, industrial, mobile,
consumer and computing applications.
COMPANY CONFIDENTIAL
3
High Performance Mixed Signal SolutionsB
as
eli
ne C
MO
S:
MP
U, M
em
ory
, L
og
ic
Mo
re M
oo
re:
Min
iatu
riza
tio
n
Sense, Interact, Empower
High-Performance Components
Information
Processing,
Storage &
Security45nm
65nm
90nm
c13
c18
c35
c75
Passives
High
Voltage
Power
Analog
(amp, IF,
DC) RFSensors
Actuators
Bio-
chips
High-Performance
Mixed-Signal Solutions
• Power Efficiency,
Autonomy
• Cost Efficiency
• Functional
Performance
• Miniaturization
• Quality, Ruggedness
and Adaptability
More Than Moore: Enrichment
PowerSensor
Actuator
Processor /
Storage
Interface
Radio
Mixed-Signal Sub-Systems
Digital Advanced CMOS
More Than Moore RequiredApplication Optimized Mix of
Analog and Digital
3
COMPANY CONFIDENTIAL
4
HPMS Sensor & Actuator Solutions
Humidity
Temperature
Acidity
Shock
Pressure
Magnetic field
Light
CO2
4
PowerSensor
Actuator
Processor /
Storage
Interface
Radio
Mixed-Signal Sub-Systems
Digital Advanced CMOS
Timing
Frequency
synthesis
COMPANY CONFIDENTIAL
What can we do with CMOS?
active devices level:
- diodes, mosfet’s,
bipolars
4..6 metal
interconnect:
- 5.6…9µm-thick mix
of Al/Ti(N)/W
conductors in
oxide/nitride matrix
Si electronic
properties:
- Eg(T) (T transducer)
- photoconductivity
(ALS)
Selective removals
of materials:
-Mechanical
transducers
(shock, pressure)
- Thermal actuation
and sensing (pH;
CO2)
C/Z transducers
- RH, pH, Gas
(CO2, CO)Additional layers
on top of finished wafer
COMPANY CONFIDENTIAL
First CMOS integrated sensors
prototype demonstration:
- Wireless read-out
- Single chip with Temperature,
Relative Humidity and Ambient
Light sensors
CMOS multiple sensor integration
KOALA™
6
COMPANY CONFIDENTIAL
NXP Research Prototype (KOALA)
CMOS integrated sensors test-chip
“Add-on to baseline CMOS”: Gas phase (humidity, CO2, O2, C2H4), Liquid (Immersion, pH), Mechanical Shock, Pressure and Ambient Light sensors
COMPANY CONFIDENTIAL 8
MEMS Timing Devices
MEMS resonator
MEMS based oscillator
accurate clock
signalCMOS amplifier
resonatorvacuum seal
CMOS14 amplifier
On-wafer vacuum sealed
MEMS resonator
COMPANY CONFIDENTIAL 9
A MEMS resonator is small, cheap, and Si
15 MHz MEMS resonator
0.4X0.4X0.15 mm3
15 MHz
quartz resonator
2.5X2.0X0.55 mm3
product height:
<150 um
miniaturization
price
MEMS
quartz
min. product height:
400 um +/-10%
product height:
<150 um
miniaturization
price
MEMS
quartz
min. product height:
400 um +/-10%
•Processed 200 mm wafer
contains ~ 100,000 devices
•Standard back-end processing
(plastic molded packaging)
quartz
CMOS
Less components
Small Inexpensive
Scalable Allows integration
COMPANY CONFIDENTIAL
MEMS Timing Device technology
October 4, 2011
10
-400
-300
-200
-100
0
100
200
Temperature [oC]
Fre
qu
en
cy o
ffset
[pp
m]
0 20 60 100 140 180
AT-cut quartz crystal
Si-SiO2
Quartz tuning forkUncompensated Si
3.15m
m
3.15m
m
m
m
m
m
m
m
m
m
m
10m
m
10m
World’s smallest
MEMS resonator!!
Q~100,000 @26MHz
Low temperature drift
On-wafer package
High frequency
Low noise
Frequency offset (Hz)1e+1 1e+2 1e+3
Phase n
ois
e (d
Bc/H
z)
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
Oscillation @ 56MHz
COMPANY CONFIDENTIAL
Capacitive pressure sensor
Capacitive pressure sensor– A (static) pressure causes a deflection of the membrane and thus a change in
the capacitance.
1111
R
Prwgh
rdrPC
0 rdiel
0
,
2
g
AεC 0
R
gh
− For a circular membrane with electrode radius R and gap height g and
electrode isolation thickness hdiel and deflection profile w(r,P)
COMPANY CONFIDENTIAL
Capacitive pressure sensor– low-power operation
Pressure sensor integrated on CMOS– Low parasitic coupling: increased S-N
– Reduced size & thickness for same sensitivity (>6x)
– Single-die advantage
12
Advantages of capacitive sensor on CMOS
Piezoresistive read-out: dual die Capacitive read-out: single die
12
5 mm 2 mm
5 mm
1.5 mm
1.2 mm
1.5
mm
ASIC
0.4 mm
0.6
mm
COMPANY CONFIDENTIAL
Pressure sensor performance
Pressure resolution is better than 0.02 mbar (i.e. 2 Pa or 16 cm !!!) due to
the 19 bit resolution of the capacitance to digital converter
13
-0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1021.42
1021.44
1021.46
1021.48
1021.50
1021.52
1021.54
1021.56
1021.58
0 50 100 150 200
He
igh
t (m
)
Pre
ssu
re (
mb
ar)
Time (s)
on the table
on the ground
COMPANY CONFIDENTIAL
CMOS scaling in relation to bio-sensing
0.1
1
10
100
1000
2010 2013 2016 2019 2022
Siz
e (
nm
)
Year of production
Small molecules
Proteins
Viruses
Prokaryotes
DNA base
pair pitch
IgG
HIV
Chlamydia
(ITRS 2009)
S DG
Gate length = 33
nm
Mouse
IgG
COMPANY CONFIDENTIAL
NXP Biosensor technology
Standard C90 nm CMOS chip design
– Individual addressable electrodes
– On-chip data storage
– On-chip calibration
Label-free capacitive detection on 180 nm nano-electrodes
d
AC eff .
4 temperature
sensors
8 A/D converters
256 x 256 nano-
electrodes
electrode
electrolyte
Sensor configuration
Sensor principle
AFM picture nano-electrodes
COMPANY CONFIDENTIAL
Bio-sensor unique selling points
Label-free detection platform applicable for affinity
sensing: DNA/proteins
Ability for multiplexing
Very good time resolution: 0.2 s allows kinetic measurements
Potential to measure in pM range
Based on standard CMOS chip manufacturing cost-effective
COMPANY CONFIDENTIAL
17
AMR sensor applications
Throttle controlusing
2 angle sensors KMA199EABSusing
4 wheel speed sensors KMI15
Window wiper using
2 angle sensors KMZ43T
Adaptive steering Using
3 angle sensors KMZ41Steering Wheel position
COMPANY CONFIDENTIAL
October 4, 2011
18
The AMR EffectRelation b/w Resistivity and Direction of Magnetisation
βCurrent
+ - R = R0 + ΔR · cos2β
β = 0° R|| = R0 + ΔR = Rmax
β = 90° R = R0 = Rmin
Due to the AMR effect in so-called transition metals (TMs) (e.g. Fe, Co and Ni)
the electrical resistivity depends on the angle between current and
magnetization direction
MR ratio
(R|| - R)/ R =DR/ RTypical MR ratio for NiFe 81:19 2,2%
COMPANY CONFIDENTIAL 19
Principle of AMR based
Rotational Speed Measurement
a.) b.) d.)c.)
position
Magnet
Gear wheel
Sensor
Magnetic
field lines
Direction
of motion
COMPANY CONFIDENTIAL
Key messages
Sensors & Actuators are natural fit to NXP’s HPMS strategy
Go with the (CMOS process) flow: – Mainstream CMOS forms a baseline for many of our process
developments
Trend towards co-integration of Sensors & Actuators on CMOS – Several sensors on a single die: parallel processing & correlation possible
– CMOS circuitry close to sensor : low parasitics, improved power efficiency
Sensors & Actuator development requires holistic approach:– Co-design of driver/reader electronics together with sensor/actuator
October 4, 2011
20
COMPANY CONFIDENTIAL
October 4, 2011
21
Acknowledgement
Wim Besling
Youri Ponomarev
Frederik Vanhelmont
Frans Widdershoven
COMPANY CONFIDENTIAL
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