sic cascodes and its advantages in power...
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“SiC Cascodes and its advantages in power electronic applications”“WBG Power Conference“, Munich, 5th December 2017
Christopher Rocneanu Director Sales Europe and North America
cro@unitedsic.com+4915121063411
USCi History
1999 2009 2010 2011 2012 2013 2014 2015 2017 2018
Established 4” foundry
relationship
Released the xR 1200V & 650V JBS diode series and the 1200V
Normally-on JFETs
Acquired and recapitalized by
current board and management team 6” wafer line qualification
& production; Cascode 650V/1200V release
MOSFET R&D
Company Founded
First foundry-based diodes and JFETs
manufactured
Built Pilot Production Fab
Initiated 6” Fab Transfer
• TS16949
2
650V & 1200V 6’’ AECQ SiC JBS Diode qualified
• TS16949
SiC Technology Focus Areas
3
World class performance in higher voltage devices
Schottky Diodes
Wide Band Gap Schottky Diodes &
SiC Module Die
Market Areas Addressed—Taking Today’s Silicon Approaches to the Next Level
650V – >10kV
Spanning Across the Voltage Spectrum
Power supplies, EV battery, solar inverters
Normally-Off Devices for Superior Performance in Switching Applications
Cascodes
IGBT Discretes & Silicon
Superjunction
650 – 1700V
Power supplies, EV battery, solar inverters
Normally-On Devices ideally suited for current limiting
and protection
SiC JFETS
Circuit Protection
650 – 6.5kV
Circuit breakers, TVS, current limiters
Standard Platforms can be customized for unique
applications
Custom Products / ICs
Integrated Circuits & High Temperature
Die
50V
High temperature or extreme environment
applications
With a Multitude of Product Applications
SiC MOSFETS
HV Si MOSFETs IGBTs
3300V – 10kV
Medical, Traction, solar inverters
Well Suited to 3.3-6.5KV applications
R&D
Product Lineup 6 inch G3 JBS diodes
4
Family Base PN Description Samples RTM Die T0-220-2L TO247-3L D2PAK-Flat (F5) SOT227
650V UJ3D06504 4A 650V JBS Diode Q3 17 Q4 17 MP D D
650V UJ3D06506 6A 650V JBS Diode Q3 17 Q4 17 MP D D650V UJ3D06508 8A 650V JBS Diode Q3 17 Q4 17 MP D D
650V UJ3D06510 10A 650V JBS Diode Available MP MP D
650V UJ3D06512 12A 650V JBS Diode Q4 17 Q1 ‘18 Q1 ‘18 D
650V UJ3D06516 16A 650V JBS Diode Q4 17 Q1 ‘18 Q1 ’18
650V UJ3D06530 30A 650V JBS diode Available MP MP MP
650V UJ3D06560 2X 30A 650V JBS diode Available MP MP
650V UJ3D065200 200A 650V JBS diode Available Q1 18 D D
MP: Mass Production ES: Engineering samples available D: in Development
Family Base PN Description Samples RTM Die T0-220-2L TO247-3L D2PAK-Flat (F5) SOT227
1200V UJ3D1202 2A 1200V JBS diode Available MP MP MP D
1200V UJ3D1205 5A 1200V JBS diode Available Q4 ’17 MP MP D
1200V UJ3D1210 10A 1200V JBS diode Available MP ES ES
1200V UJ3D1220 2X 10A 1200V JBS diode Q4 ’17 Q4 ’17 - ES1200V UJ3D1250 50A 1200V JBS diode Available MP MP MP
1200V UJ3D12100 100A 1200V JBS diode ES Q2 ’18 ES D
D2PAK FLAT (F5): Better Thermal and creepage
New unique and pin to pin compatible
package:
• Pin to pin compatible to D2PAK 2L
• Better thermal behaviour
• Samples available:
• 1200V, 2A.5A,10A, 20A
• 650V, 4A, 6A, 8A, 10A, 20A
5USCi Confidential
High Current Diode in Hybrid Application
6USCi Confidential
Benefits available by swapping die, no system change needed
Normally OffUSCi SiC FET
USCi’s Switch Technology Compared to SiC MOSFETs
Die Size (Smaller) RDSA~ 1.75mΩ-cm2 (Larger) RDSA~ 3.1- 4.5 mΩ-cm2
Gate Drive (Standard) VGS = 0V to 12V OR(SIC) VGS = -25V to 25V VGS = -5V to 20V
Threshold VGS(TH) = 5V Typical VGS(TH) = 2.2V Typical
Intrinsic Diode VSD=1.5V, Low Qrr, +10% Over Temperature
High VF, High Qrr, 3X Over Temperature
Avalanche Yes Yes
Short Circuit 4 us guaranteed, 8us typical Low
ESD protection integrated n/a
Integrated LV Si-MOSFET
Additional Antiparallel SiC
Diode
Normally OffTypical SiC MOSFET
7USCi Confidential
RDS,A (active area) Comparison in 650V class devices
8USCi Confidential
Cascode Operation
9USCi Confidential
Gate Drive requirements
USCi Confidential10
• Easy Drop-in 12V turn-on makes SiC cascode an easy choice for drop-in replacement.
• Extra Margin in VGSSiC cascode has higher margin in VGS design and requires no negative VGS for turn-off.
• Integrated safety featuresIntegrated clamping diode protects gates from |25V| and adds ESD protection
• True Second source to any Si [IGBT, SJFET] and SIC MOSFET
Maximum VGS rating vs. recommended VGS
20V
-20V
0V 12 V
25V
-25V According to Competitor R SIC Trench MOSFET Gen 3 with VGS<15V is expected to have thermal Run Away & significant higher losses!
SiC Cascode12V / 0V
Si IGBT + SJFET15V/0V, 12V/0V
22V
-6V
G2 SiC MOSFETCompetitor R
18V/-3V
-8-3V
19V
0G3 SiC MOSFETCompetitor W
15V/-4V
-10V
25V
0
G2 SiC MOSFETCompetitor W
20V/-6V
SiC Device 3rd Quadrant Operation
11
USCi’s SiC Cascode UJC1210K SiC MOSFET C2M0080120D
Knee Voltage = 0.7V Knee Voltage = 2.1V
Low VF eliminates need for separate anti-parallel diode
(Datasheet comparison)
USCi Confidential
Cascode versus SiC MOSFET Reverse Recovery
12
trr <40ns
• Performed on in-house double-pulse tester• Gate-source shorted, VGS = 0 V• 800 V inductive load
150 °C, 800 V, 11aA, 1500 A/µs
USCi Confidential
USCi Confidential 13
UJC1210KVGS: 18V / -5V
Rgon = 2.3 Ω, Rgoff = 10 Ω, Eon = 406 uJ
di/dt = 1.28 A/ns, dv/dt = 69 V/ns
C2M080120DVGS: 18V / -5V
Rgon = 5 Ω, Rgoff = 5 ΩEon = 446 uJ
di/dt = 2.1 A/ns, dv/dt = 71 V/ns
-7
0
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-200
0
200
400
600
800
1000
1200
ID (A
)
VDS
(V)
time (20 ns/div)
VDS
ID
Eoff = 101 uJdi/dt = 4.2 A/ns, dv/dt = 86 V/ns
Eoff = 115 uJdi/dt = 2.3 A/ns, dv/dt = 60 V/ns
-7
0
7
14
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-200
0
200
400
600
800
1000
1200
ID (A
)
VDS
(V)
time (20 ns/div)
VDSID
-7
0
7
14
21
28
35
42
-200
0
200
400
600
800
1000
1200
ID (A
)
VDS
(V)
time (20 ns/div)
VDSID
-7
0
7
14
21
28
35
42
-200
0
200
400
600
800
1000
1200
ID (A
)
VDS
(V)
time (20 ns/div)
VDSID
HALF BRIDGE SWITCHING 20A, 800V, 125C@50% smaller SiC Die Size!
Cascode 3rd Quadrant Operation
14
• SiC cascode is fully on with gate-source voltage between 10 to 20 V, just like a MOSFET• Current flows in either direction through JFET• Reverse current flows through MOSFET body diode or through MOSFET channel• In all cases, JFET gate-source voltage is essentially zero; JFET is fully on
D
S
G
+ VGS_JFET – +
VDS_MOSFE
T
–
VGS 0
0VDS
0VGS_JFET
SiCCascode
Forward current
D
S
G
+ VGS_JFET – +
VDS_MOSFE
T
–
VGS 0
0VDS
0VGS_JFET
SiCCascode
Reverse current, synchronous
D
S
G
+ VGS_JFET – +
VDS_MOSFE
T
–
VGS 0
0VDS
0VGS_JFET
SiCCascode
Reverse current, non-synchronous
USCi Confidential
Product Lineup Gen 2 SiC FETs
15
Family Base PN Description Samples Production Die T0-220 TO247-3L TO247-4L D2pak-3L
1200V Cascode UJC1206K 1200V 60mΩ SiC Cascode Available MP MP MP
1200V Cascode UJC1210K 1200V 100mΩ SiC Cascode Available MP MP MP
1200V Cascode UJC1220KS 1200V 220mΩ SiC Cascode Available ES ES ES
650V Cascode UJC06505K 650V 45mΩ SiC Cascode Available MP MP ES MP
MP: Mass Production ES: Engineering samples available D: in Development
USCi Confidential
Family Base PN Description Samples Production Die T0-220 TO247-3L TO247-4L D2pak-3L
1200V JFET UJN1208K 1200V 80mΩ SiC JFET Available MP MP MP
1200V JFET UJN1205K 1200V 45mΩ SiC JFET Available MP MP MP
+2V
-15V
Normally On
No gate oxideFor high temperature operation
No Intrinsic Diode
Normally Off (Cascode)
Intrinsic Diode(Inductive Loads)
+12 V
30V Si MOSFETAvailable Co-Packaged
1.2kV SiC JFET
+0 V
Product Lineup Gen 3 SiC FETs
16USCi Confidential
Family Base PN Description T0-220 TO247-3L TO247-4L D2pak -7L D2pak-3L
1200V Cascode UJ3C120015K3S 1200V 150mΩ SiC Cascode - Q1 ’18 Q3 ‘18 Q1 ‘18
1200V Cascode UJ3C120080K3S 1200V 80mΩ SiC Cascode - ES/ Q1 ’18 Q3 ‘18 D
1200V Cascode UJ3C120040K3S 1200V 40mΩ SiC Cascode - ES/ Q1 ’18 Q3 ’18 D
1200V Cascode UJ3C120020K3S 1200V 20mΩ SiC Cascode - - Q3 ‘18 D
650V Cascode UJ3C065080K3S 650V 80mΩ SiC Cascode Q2 ’18 ES/ Q1 ’18 D D ES / Q2 ‘18
650V Cascode UJ3C065042K3S 650V 42mΩ SiC Cascode Q2 ’18 Q2 ’18 D D D
650V Cascode UJ3C065030K3S 650V 30mΩ SiC Cascode Q2 ’18 ES/ Q1 ’18 D D ES / Q2 ‘18
MP: Mass Production ES: Engineering samples available D: in Development
650V Cascode
17
UJC6505TCascode
SCT2120AFSiC MOSFET
GS66508BGaN HEMT
IPW65R045C7Si Superjunction
PFSB Efficiency Vin=400V, Vo=48V, 75kHz
USCi Confidential
Customer Reference
18
+
• Technological partnership• Phase shifted Full bridge
(need for an excellent body diode)• 10kW battery charger• 30% higher output power with SiC Cascode in
same dimensions• IGBT replacement and ease of use through
Standard Gate drive • 1.5% higher efficiency
=
Customer Reference
19
+• Bidirectional converter which is used today in around
50% of the DC Fast Charger in Europe today• No external SiC Schottky diode in hard switched
application needed due to significant reduced body diode (<2V) compared to SiC MOS
• System Cost reduction due to Cascode usage • Modular reliable systems with proven technology up to
150kW• Uni and bidirectional from 6kW up to 25kW with V2G /
V2H operation• CHAdeMO and CCS compatible• 97% efficient, 500V DC and 1000V DC• Noiseless Power
=
Behlke
USCi Confidential20
6.5kV SiC Module
Applications Variable Speed Industrial Motor Drives HV Battery Stacking Transformerless Grid-Tie Heavy Vehicle Traction Converters Hybridization of Ships Flywheel: High Voltage Stators
The 4.5-6.5kV Modules targets higher power (MW)applications where systems can benefit from higherDC-Link voltages and faster switching frequencies:
GVEA BESS5kV DC-Link
(Alaska)
Trains
USCi Confidential
3300V MOSFETs
USCi Confidential22
Rds,on Breakdown (mΩ•cm2) Value Percentage
Source + Channel 1.91 19.1%JFET 1.94 19.5%Epi 5.98 59.9%
Sub + B/S 0.15 1.5%Total 10.0 100%
Source + Channel; 1,91; 19%
JFET; 1,94; 19%Epi; 5,98;
60%
Sub + B/S; 0,15; 2%
Rds,on Breakdown (mΩ•cm2)
With +15V/-5V gate drive similar to IGBTs, RdsA
increases to 11.2mohm-cm2 with 10us Short
circuit withstand capability.
Preliminary Die Datasheet of 1700V -7.5mΩ SiC JFET
Technical Approach
USCi Confidential
USCi prototype demonstrated
In development
USCi Confidential
Technical ApproachComparison with Other Unipolar Approaches
Approach SiC MOSFET Only SiC Stack Cascode Proposed Module
SiC Chip Technology
Die 6.5kV MOSFET Chip 6.5kV JFET Chip 1.7kV JFET Chip
RDSA 63mΩ-cm2 63mΩ-cm2 3mΩ-cm2
Die Size 8.33 x 8.33 mm2 8.33 x 8.33 mm2 7.7 x 7.7 mm2
Die Max. Ron @ RT 160mΩ 160mΩ 5.5mΩ
Half-Bridge Module
Technology
Max. Ron @ RT 20mΩ 20mΩ 20mΩ
Switch Configuration 8 dies in parallel 8 dies in parallel 5 JFETs (each contains 2 dies in parallel) in series
Total Die Count 16 16 20
Projected Module Cost Structure(150mm epi-wafer, ~70% die yield) $20 / A $20 / A $11 / A
Module Performance
Typical VTH @ 150°C 2.0V 3.7V 3.7V
Practical Gate Drive -5V to + 20V Standard 0V to +12V Standard 0V to +12V
Gate Charge
Qgs 400 nC 120 nC 30 nC
Total Qg 2360 nC 400 nC 100 nC
Anti-Parallel Diode
Built-in Built-in Built-in
High Qrr Low Qc Low Qc
Knee voltage: > 2V Knee voltage: 0.7V Knee voltage: 0.7V
USCi Confidential
• Due to the use of lower cost SiC 1700V devices, module cost 2X lower• Much better gate charge and diode Qc
Ultra Low RDS,on devices –Solid State Circuit Breaker
USCi Confidential27
Summary
28
SiC Diodes • Best-in-class performance
• Highest currents available
• USCi matched with industry leading die sizes (cost)
SiC JFET• Best in class devices for special applications
SiC Cascodes• Ease of use (12V/0V or 20V / -5V Gate Drive)
• Performance (Low Vf , Qrr Body-diode, switching energies)
• Reliability (No SiC Gate oxide, No SiC body diode, 5V Threshold voltage)
• Guaranteed 4us Short circuit typ 8us (highest in SiC industry)
• Cost (no SiC FWD necessary, lowest specific Rds,on in industry)
Additional• App Notes, Datasheets and SPICE models available at www.unitedsic.com
• Various Eval Boards already available or available soon (PSFB, PFC, Flyback, LLC, H-Bridge,..)
• Contact: Christopher Rocneanu, Director Sales, +4915121063411, cro@unitedsic.com
Available on:
29
THANK YOU!
QUESTIONS?
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