simulation of optoelectronic devices - nusodsimulation of optoelectronic devices-3- silvaco...

10/21/2005

Simulation of Optoelectronic Devices

Günther Zandler

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Outline

SilvacoATLASGeneral Optoelectronic CapabilitiesInGaN/GaN Material SystemOptical CouplingMicro-Ring Device

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Silvaco Background

Founded in 1984 by Dr. Ivan PesicMarket Leader in SPICE Simulation, TCAD, and IC CAD Large Customer Base of Foundry, IDM, ASIC, and Fabless Semiconductor CompaniesHeadquarters in Silicon Valley with 11 Offices WorldwidePrivately Held, Profitable Since Inception, Debt-free

Grown from Retained Earnings, No VC FundingCurrently Employs Over 220 Professionals

80% with Advanced Engineering Degrees (MS, PhD)Worldwide Technical Support and TrainingActive Programs with Leading Foundries, EDA Vendors, Universities, Industry Standards, and Government Agencies

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Connecting TCAD to Tapeout – Design Flow

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ATLAS Physical Models

Drift Diffusion (Hetrojunctions)Heat flowImbedded CircuitEnergy Balance/HydrodynamicTraps/Amorphous

Photodetection (Ray Trace, BPM, Waveguide)Quantum Effects (MOS, S-P, QM, BQP)Light Emitters (LED, Laser, VCSEL)C-Interpreter

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ATLAS Product Hierarchy

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ATLAS Context

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Optical Models

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ATLAS – Luminous

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ATLAS – Quantum Selected Results

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ATLAS – LED

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ATLAS – Laser Selected Results

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ATLAS – VCSEL

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VCSEL structures

Cold cavity analysisEasy overlay of optical and electrical quantities

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Polarization Effects on Band Edges in InGaNMicroring LED

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Lorentzian Broadening

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Three Well LED with Random Composition Variation

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LED Spectrum Effects of Random Composition

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LED Output Coupling Efficiency Without Reflector

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LED Output Coupling Efficiency: With Mirror

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LED Output Coupling Efficiency: With Mirror and Interference

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LED Output Coupling Efficiency: Mirror, Interference and Integrated

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LED Output Coupling Efficiency: Mirror, Interference, Integrated and Multispectral

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Organic Materials

Poole Frenkel Mobility ModelsLangevin Recombination ModelsDefect Distributions (oTFT)Dynamic Equations for Excitions (Singlet & Triplet)Various Recombination Rates can enter in Reverse Ray Tracing

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Micro-ring Device Structure

Reference: Choi, H.W. et.al., "High extraction efficiency InGaN micro-ring light-emitting diodes", Appl. Phys. Lett., Vol. 83, No. 22, pp. 4483-4485.

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Micro-Ring LED structure in ATLAS

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Effects of Choice of Well Composition on Simulated Emission Wavelength

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Effects of Choice of Bowing Factor on Simulated Emission Wavelength

Reference: Piprek, J. "Semiconductor Optoelectronic Devices Introduction to Physics and Simulation", Academic Press, UCSB, 2003, pp. 142 and 143.

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Effect of Well Thickness on Blue Shift

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Broad Area / Micro-ring LED

Broad Area LED Micro-ring LED

Shortcomings of the proposed micro-ring design are shownImprovements of coupling efficiency and insignificant changes of radiation profile are confirmed

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Conclusion

Simulation of various types of devices in absorptions and emissionWide range of physicals models for coupled electrical and optical simulationSupport for novel materials and materials systems