simulation program with integrated circuit emphasismdker/courses/dic2005/spice.pdf · –simulation...

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SPICESimulation Program with Integrated Circuit Emphasis

Sep. 25, 2004

References: [1] CIC SPICE training manual[3] SPICE manual[2] DIC textbook

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Introduction

• SPICE: – Simulation Program with Integrated Circuit Emphasis– Developed by University of California at Berkeley

• A CAD tools to simulate circuits in steady-state, transient, and frequency domains.

• SBTSPICE, HSPICE, TSPICE, PSIPCE

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HSPICE Simulation Flow

Reference: CIC SPICE training manual

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MOS SPICE Model• LEVEL 1:

– Based on square law– Long-Channel devices

• LEVEL 2:– Velocity saturation– Mobility degradation – Drain-induced barrier lowering (DIBL)

• LEVEL 3:– Semi-empirical model

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MOS SPICE Model (cont.)• BSIM3V3:

– Berkeley Short-Channel IGFET Model– LEVEL 49– Over 200 parameters to model the 2nd-order

effect

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Netlist Structure

Depend on spice model

Circuit structure

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Instance and Element NamesCDE, F, G, HIJKLMQRO, T, UVX

CapacitorDiodeDependent Current and Voltage control sourceCurrent SourceJFET or MESFETMutual InductorInductorMOSFETBJTResistorTransmission LineVoltage SourceSubcircuit Call

Scale Factors

f 1e-15 k 1e3

p 1e-12 meg 1e6

n 1e-9 g 1e9

u 1e-6 T 1e12

m 1e-3

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Device DescriptionR1 A B 1k

C1 C D 1p

M1 D G S B nch l=1u w=3u+AD=3p PD=5u AS=3p PS=5u+ NRS=1 NRD=1

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Subcircuit Description and Recall

• Description (Ex: a inverter).subckt inv in outmp1 out in vdd vdd pch l=1u w=3umn1 out in 0 0 nch l=1u w=1u.ends inv

• Recallx1 a b invx2 c d inv

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DC Analysis TypeDC sweep & DC small signal anysis

.dc sweep for power supply, temp., param…..

.op specify time (s) at which operating point is to be calculated.

.tf calculate DC small-signal transfer function.

.pz performs pole/zero analysis

Example:.dc vin 0 5 0.25

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AC Analysis TypeAC sweep & small signal analysis.ac calculate frequency-domain response.noise noise analysis

Example:.ac dec 10 1k 100meg sweep Rl dec 2 5k 15k

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Transient Analysis Type

.tran calculate time-domain response

.four fourier analysis

.fft fast fourier transform

Example:. tran 1n 100n

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Voltage and Current Source

• PulseVin in 0 pulse (0V 5V 10ns 10ns 10ns 40ns 100ns)

• SinusoidalVin in 0 sin (0V 1V 100Meg 2ns 5e7)

• Piecewise Linear SourceVin in 0 pwl (60n 0V, 120n 0V, 130n 5V, 170n 5V +180n 0V, R 0)

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Input control Statements.data

.tran 1 n 100n sweep data=D1

.data D1 width Length VDD Cap

10u 100u 2V 5p

50u 600u 10V 10p

50u 600u 10V 10p

…..

.enddata

.alter

.del lib “XXX.lib” TT

.lib “XXX.lib” FF

.alter

.temp -50 0 50

Rl 1 2 1k

.param Wval=100u

.end

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Output Format.option list produces an element summary listing of

the data to be printed.

.option node prints a node connection table.

.option acct reports job accounting and run-time statistics at the end of output listing.

.option opts prints the current settings of all control options.

.option nomod suppress the printout of model parameters.

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Output Statement.print print numeric analysis results.probe allows save output variables only into

the graph data files.meas print numeric results of measured

specificationsExample:.print Vdb(vout) V(node) par(‘V(out)/V(in)’).meas tran tprop trig V(in) val=2.5 rise=1 targ V(out) val=2.5 fall=1

xxx.ms# xxx.ma# xxx.mt#

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Simulation step

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AvanWaves (1)

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AvanWaves (2)

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AvanWaves (3)

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AvanWaves (4)

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AvanWaves (5)

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AvanWaves (6)

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Output buffer (inverter)

Supply voltage 2.5 V

Output load 10 pF

Operation frequency 500 MHz

Rise time and fall time < 0.2 nsec

Used the 1.2 µm CMOS process

Design Example

Vin Vout

VDD

CL

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Design Example (cont.)

72

02

0

1.75 10

0.74

656 sec1 2 sec

500

2.2 0.1 0.1 sec2

0.04545 sec

OX

th

f

on L

FC cmV V

cmV

T nMHz

Tt n

R C n

µ

τ

τ

−= ×

=

= −

= =

= = × =

= =

NMOS

34.54454

412.6

2320.5556

27851.2

onDsat

Dsat

nmos

nmos

VDDRI

I mAWLWL

µµ

= ≈

=

⎛ ⎞ =⎜ ⎟⎝ ⎠

⎛ ⎞ =⎜ ⎟⎝ ⎠

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Design Example (cont.)

***** IO *****

.MODEL NMOS NMOS LEVEL=2 LD=0.15U TOX=200.0E-10 VTO=0.74 KP=8.0E-05+ NSUB=5.37E+15 GAMMA=0.54 PHI=0.6 U0=656 UEXP=0.157 UCRIT=31444+ DELTA=2.34 VMAX=55261 XJ=0.25U LAMBDA=0.037 NFS=1E+12 NEFF=1.001+ NSS=1E+11 TPG=1.0 RSH=70.00 PB=0.58+ CGDO=3.4E-10 CGSO=4.3E-10 CJ=0.0003 MJ=0.66 CJSW=8.0E-10 MJSW=0.24

.MODEL PMOS PMOS LEVEL=2 LD=0.15U TOX=200.0E-10 VTO=-0.74 KP=2.70E-05+ NSUB=4.33E+15 GAMMA=0.58 PHI=0.6 U0=262 UEXP=0.324 UCRIT=65720+ DELTA=1.79 VMAX=25694 XJ=0.25U LAMBDA=0.061 NFS=1E+12 NEFF=1.001+ NSS=1E+11 TPG=-1.0 RSH=121 PB=0.64+ CGDO=4.3E-10 CGSO=4.3E-10 CJ=0.0005 MJ=0.51 CJSW=1.35E-10 MJSW=0.24

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Design Example (cont.).temp 25M0 Vout Vin VDD VDD pmos w=94u L=1.2u m=90M1 Vout Vin 0 0 nmos W=94u L=1.2u m=30Cl vout 0 10pF

VDD VDD 0 2.5VVin Vin 0 pulse(0 2.5 1n 0.1n 0.1n 0.9n 2n)

.op

.option post

.tran 1n 30n

.probe V(vout)

.meas tran tr trig V(vout) val=0.25 rise=2 targ V(vout) val=2.25 rise=2.meas tran tf trig V(vout) val=2.25 fall=2 targ V(vout) val=0.25 fall=2.meas tran rms_power RMS power.end

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Design Example (cont.)

Clock feedthrough