sipm interconnections to 3d electronics jelena ninkovic max-planck-institute for physics, munich,...
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SiPM Interconnections to 3D electronics
Jelena Ninkovic
Max-Planck-Institute for Physics, Munich, Germany
• SiMPs basics
• Why do we need 3D interconnections
• Concept of SiPMs with Bulk Integrated Quench Resistors – SiPMl concept
• What we want to do
2Jelena Ninkovic
What is a Silicon Photomultiplier - SiPM
• An array of avalanche photodiodes
• operated in Geiger mode binary device
• passive quenching by integrated resistor
• read out in parallel signal is sum of all fired cells
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
MEPhI/Pulsar (Moscow) - Dolgoshein
CPTA (Moscow) - Golovin
Zecotek(Singapore) - Sadygov
Amplification Technologies (Orlando, USA)
Hamamatsu Photonics (Hamamatsu, Japan)
SensL(Cork, Ireland)
AdvanSiD (former FBK-irst Trento, Italy)
STMicroelectronics (Italy)
KETEK (Munich)
RMD (Boston, USA)
ExcelitasTechnologies (former PerkinElmer)
MPI Semiconductor Laboratory (Munich)
Novel Device Laboratory (Beijing, China)
Philips (Netherlands)
Every producer uses its own name for this type of device: MRS APD, MAPD, SiPM, SSPM, MPPC, SPM, DAPD, PPD, SiMPl , dSiPM
………
What is available?
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 3
Why do we need 3D integration?
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 4
Components of a SiPM cell
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 5
SiPM cell components SiMPl approach
n+
p+
AD
RQ
CD
CC
Vbias
Jelena Ninkovic 6AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
Concept developed at
Max-Planck-Society Semiconductor Laboratory
SiPM cell components SiMPl approach
n+
p+
n
high field
AD
RQ
CD
CC
Vbias
Jelena Ninkovic 7AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
SiPM cell components SiMPl approach
n+
p+
n- non-depleted
region
n- non-depleted
region
n- depleted gap
region
n
high field
AD
RQ
CD
CC
Vbias
Jelena Ninkovic 8AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
SiPM cell components SiMPl approach
n+
p+
n- non-depleted
region
n- non-depleted
region
n- depleted gap
region
n
high field
AD
RQ
CD
CC
Vbias
Sensor wafer
Handle wafer
SOI wafers
Jelena Ninkovic 9AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 10Jelena Ninkovic
Advantages and Disadvantages
Advantages:• no need of polysilicon• free entrance window for light, no metal necessary within the array• coarse lithographic level• simple technology• inherent diffusion barrier against minorities in the bulk -> less optical
cross talk
Drawbacks:• required depth for vertical resistors does not match wafer thickness• wafer bonding is necessary for big pixel sizes • significant changes of cell size requires change of the material • vertical ‘resistor‘ is a JFET -> parabolic IV -> longer recovery times
AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 11Jelena Ninkovic
Prototype production
High homogeneity over big distances! 6 100 cells arrays placed over
6mm distance
High homogeneity within the array!
6mm
6mm
30x30 arraysensitive area free
High linearity!
DV=2V
DV=1V
Hamamatsu MPPC
SiMPL
DV=2V
DV=1V
Fill factor & Cross Talk & Photon Detection Efficiency
Pitch / Gap Fill factor
Cross talkmeas.
(DV=2V)
130mm / 10mm
85.2% 29%
130mm / 11mm
83.8% 27%
130mm / 12mm
82.4% 25%
130mm / 20mm
71.6% 15%
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 12
Fill factor limited only by the cross talk suppression need!
No special cross talk suppression
technology applied
just intrinsic property of SiMPl
devices
@223K
Detection of particles
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 13
Excellent time stamping due to the fast avalanche process (<1ns)
MIP gives about 80pairs/mm huge signal in SiPM allows operation at small DV
Reduction of dark rate and cross talk by at least an order of magnitude
<10% GE still gives
high MIP detectionefficiency
n+
n- non-depleted
region
n- non-depleted
region
n- depleted gap
region
n
Next generation SiMPl devices
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 14
n+
n- non-depleted
region
n- non-depleted
region
n- depleted gap
region
n
Next generation SiMPl devices
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 15
n+
n- non-depleted
region
n- non-depleted
region
n- depleted gap
region
n
Next generation SiMPl devices
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 16
Logic, TDC, Photon counter
Cell electronics
Cell electronics
Topologically flat surface
High fill factor
Adjustable resistor valueLow RC -> very fast
Active recharge
Ability to turn off noisy pixels
Pitch limited by the bump bondingCell electronics: Active quenching, Bias control, Cell activity, Digital output
n+
n- non-depleted
region
n- non-depleted
region
n- depleted gap
region
n
Next generation SiMPl devices
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 17
Topologically flat and free surface
High fill factor
Sensitive to light
n+
n- non-depleted
region
n- non-depleted
region
n- depleted gap
region
n
Next generation SiMPl devices
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 18
Topologically flat and free surface
High fill factor
Sensitive to light
n+
n- non-depleted
region
n- non-depleted
region
n- depleted gap
region
n
Next generation SiMPl devices
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 19
Logic, TDC, Photon counter
Cell electronics
Cell electronics
Topologically flat and free surface
High fill factor
Sensitive to light
n+
n- non-depleted
region
n- non-depleted
region
n- depleted gap
region
n
Next generation SiMPl devices
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 20
TDC, Photon counter, active recharge
Cell electronics
Cell electronics
Topologically flat and free surface
High fill factor
Sensitive to light
sensorwafer
handle wafer
on sensor wafer2. bond sensor wafer
to handle wafer3. thin sensor side
to desired thickness4. process SiMPl arrays
on top side
sensorwafer
handle wafer
1. Structured implant on backside 5. Etching backside & flip chipping on back side
n+
n- non-depleted
region
n- non-depleted
region
n- depleted gap
region
n
Next generation SiMPl devices
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 21
TDC, Photon counter, active recharge
Cell electronics
Cell electronics
Topologically flat and free surface
High fill factor
Sensitive to light
sensorwafer
handle wafer
on sensor wafer2. bond sensor wafer
to handle wafer3. thin sensor side
to desired thickness4. process SiMPl arrays
on top side
sensorwafer
handle wafer
1. Structured implant on backside 5. Etching backside & flip chipping on back side
n+
n- non-depleted
region
n- non-depleted
region
n- depleted gap
region
n
Next generation SiMPl devices
Jelena Ninkovic AIDA - Academia meets Industry, Frascati, Italy, 09.04.2013 22
TDC, Photon counter, active recharge
Cell electronics
Cell electronics
Topologically flat and free surface
High fill factor
Sensitive to light
sensorwafer
handle wafer
on sensor wafer2. bond sensor wafer
to handle wafer3. thin sensor side
to desired thickness4. process SiMPl arrays
on top side
sensorwafer
handle wafer
1. Structured implant on backside 5. Etching backside & flip chipping on back side
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