spice model of 2sj654 (standard+bds model) in spice park
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All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: 2SJ654 MANUFACTURER: SANYO Body Diode (Model Parameters) / ESD Protection Diode
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2
MOSFET MODEL
PSpice model parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3
0
2
4
6
8
10
0.0 2.0 4.0 6.0 8.0 10.0
gfs
(S)
Drain Current ID (-A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
-Id(A) gfs(S)
Error (%) Measurement Simulation
1.0000 3.100 3.199 3.20
2.0000 4.350 4.467 2.70
5.0000 6.750 6.883 1.97
10.0000 9.400 9.465 0.69
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4
V1
0Vdc
V2
-10
0
V3
0Vdc
U12SJ654
V_V1
0V -1.0V -2.0V -3.0V -4.0V -5.0V -6.0V
I(V3)
0A
-2A
-4A
-6A
-8A
-10A
-12A
-14A
-16A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5
Comparison Graph Circuit Simulation Result
Simulation Result
-ID(A) -VGS(V)
Error (%) Measurement Simulation
1 2.650 2.596 -2.04
2 2.900 2.857 -1.50
5 3.400 3.384 -0.48
10 4.000 3.994 -0.15
12 4.200 4.197 -0.08
14 4.400 4.385 -0.35
16 4.600 4.561 -0.85
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6
U12SJ654
0
V3
0Vdc
VDS
0Vdc
V1
-10
V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(V3)
0A
-0.5A
-1.0A
-1.5A
-2.0A
-2.5A
-3.0A
-3.5A
-4.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-4A, VGS=-10V Measurement Simulation Error (%)
RDS (on) mΩ 240.000 240.000 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7
Time*1mA
0 5n 10n 15n 20n
V(W1:4)
0V
-1V
-2V
-3V
-4V
-5V
-6V
-7V
-8V
-9V
-10V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=-50V,ID=-8A ,VGS=-10V
Measurement Simulation Error (%)
Qgs nC 3.800 3.790 -0.28
Qgd nC 4.500 4.509 0.20
Qg nC 20.000 16.286 -18.57
VDD
-50
I1TD = 0
TF = 5nPW = 600uPER = 1000u
I1 = 0I2 = 1m
TR = 5n
-
+
W1
ION = 0uAIOFF = 1mAW
I28
0
D2Dbreak
U12SJ654
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8
Capacitance Characteristic
Simulation Result
VSD(V) Cbd(pF)
Error(%) Measurement Simulation
0 110.000 110.000 0.000
5 30.000 29.735 -0.883
10 18.500 18.478 -0.119
15 13.500 13.723 1.652
20 11.000 11.047 0.427
25 9.500 9.312 -1.979
30 8.000 8.087 1.088
Simulation
Measurement
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9
Time
0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us
V(U1:G) V(U1:D)/5
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-4A, VDD=-50V VGS=0/-10V
Measurement Simulation Error(%)
td(on) ns 12.000 11.998 -0.02
0
VDD-51Vdc
V2TD = 1u
TF = 5nPW = 10uPER = 20u
V1 = 0
TR = 5n
V2 = 20
U12SJ654
L2
50nH
R2
50
R1
50
L1
30nH
RL
12.5
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10
V2
-10
V1
0
0
V3
0Vdc
U12SJ654
V_V2
0V -1V -2V -3V -4V -5V -6V -7V -8V -9V -10V
I(V3)
0A
-2A
-4A
-6A
-8A
-10A
-12A
-14A
-16A
-18A
-20A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=-3V
- 4
-6 -10, -8
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11
U12SJ654
VDS
0
Vsense
0Vdc
V_VDS
0V 0.3V 0.6V 0.9V 1.2V 1.5V
I(Vsense)
10mA
100mA
1.0A
10A
100A
BODY DIODE SPICE MODEL Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12
0.01
0.10
1.00
10.00
0 0.3 0.6 0.9 1.2 1.5
Dra
in r
evers
e cu
rren
t ID
R (
-A)
Source - Drain voltage VSD (-V)
Measurement
Simulation
Comparison Graph Circuit Simulation Result
Simulation Result
IDR(-A) VSD(-V)
%Error Measurement Simulation
0.01 0.6050 0.6036 -0.24
0.02 0.6250 0.6246 -0.07
0.05 0.6500 0.6526 0.40
0.1 0.6750 0.6743 -0.11
0.2 0.6950 0.6968 0.25
0.5 0.7300 0.7292 -0.11
1 0.7600 0.7581 -0.24
2 0.7950 0.7945 -0.06
5 0.8600 0.8626 0.30
10 0.9400 0.9380 -0.22
20 1.0500 1.0505 0.05
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13
U12SJ654
V1
TD = 40ns
TF = 10nsPW = 1usPER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v
R1
50
0
Time
0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 26.000 26.125 0.48
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14
Reverse Recovery Characteristic Reference
Trj=26.00(ns) Trb=28.00(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15
R1
0.001m
V1
0Vdc
0
U1
2SJ654R2
100MEG
V_V1
0V -10V -20V -30V -40V -50V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
16
Zener Voltage Characteristic Reference
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