status of e mbedded l ocal m onitor b oard ( elmb )
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H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 1
ATLASATLAS DCS
Status ofStatus of
EEmbedded mbedded LLocal ocal MMonitor onitor BBoardoard
((ELMBELMB))
•Overview•Radiation tolerance measurements•Future work
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 2
ATLASATLAS DCS What is the ELMB ?What is the ELMB ?
I/O concentrator implemented as CAN fieldbus nodeI/O concentrator implemented as CAN fieldbus node FeaturesFeatures
8 ports input 8 ports output 8 ports definable ADC, 64 channels, 16 bit resolution, 7 bit gain
Add-ons:Add-ons: DAC, 16 channels, 12 bit resolution (NIKHEF) HW Interlock, 16 channels, window set by resistors (Wuppertal) Motherboard (NTU Athens)
GoalGoal: flexible I/O system for use in ATLAS : flexible I/O system for use in ATLAS cavern cavern outside the calorimeteroutside the calorimeter (i.e. Muons) (i.e. Muons)
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 3
ATLASATLAS DCS Status ELMBStatus ELMB
Design: HW CERN; SW NIKHEFDesign: HW CERN; SW NIKHEF Prototype LMBPrototype LMB Review (subdetector’ wishes, radiation tolerance)Review (subdetector’ wishes, radiation tolerance) ELMB ELMB
prototype 20 pieces production 300 pieces (with help from EP/ESS, NTU Athens) pre-qualification measurements concerning radiation
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 4
ATLASATLAS DCS ELMB front sideELMB front side
50mm
67 mm
DIP-SWIDBAUD
ISP
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 5
ATLASATLAS DCS ELMB back side ADC ELMB back side ADC
2*50 pin Bergstac connector
ADC AnalogMUX
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 6
ATLASATLAS DCS
ELMB ADC ELMB ADC ELMB 25 mV (Testbox)
21.117
21.118
21.119
21.120
0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000
Time (s)
AD
C r
ead
ing
s (m
V)
1 V1uV
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 7
ATLASATLAS DCS
ELMB ADCELMB ADC
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 8
ATLASATLAS DCS
ELMB3 motherboard for tests in DIN rail housing
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 9
ATLASATLAS DCS Back side of MB3Back side of MB3
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 10
ATLASATLAS DCS Radiation MeasurementsRadiation Measurements
Total Ionisation Dose (TID)Total Ionisation Dose (TID) PAGURE, Saclay, Co60 (1 MeV gammas) GIF, CERN, Cs137 (662 keV gammas) CYCLONE, Louvain-la-Neuve, 60 MeV protons
Single Event Effects (SEE)Single Event Effects (SEE) CYCLONE, Louvain-la-Neuve, 60 MeV protons
Non-Ionising Energy Loss (NIEL)Non-Ionising Energy Loss (NIEL) PROSPERO, Valduc, 0.75 MeV neutrons from reactor
““Measurements in the Field”Measurements in the Field” TCC2 target area, CERN SPS, “realistic (?) mix of particles”
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 11
ATLASATLAS DCS
TID testsTID tests
Comparison GIF versus PAGURE
99
104
109
114
119
124
0 10 20 30 40 50 60
TID (Gy)
Ch
ang
e in
cu
rren
t (%
)ELMB1 ELMB2ELMB3 ELMB5
GIF ELMB3 0.48 Gy/h
PAGUREELMB277 Gy/h
PAGUREELMB177 Gy/h
GIF ELMB5 0.45 Gy/h
ELMB5Reprog0.17 Gy/h
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 12
ATLASATLAS DCS Accelerated ageing testAccelerated ageing test
ELMB Endurance test
0
10
20
30
40
50
7.3.01 9.3.01 11.3.01 13.3.01 15.3.01 17.3.01 19.3.01 21.3.01
Date
Cur
rent
(mA
)
10
20
30
40
50
60
70
80
90
100
110
Tem
per
atu
re (
C)
ELMB3_digital ELMB4_digital Temperature
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 13
ATLASATLAS DCS
TID effectsTID effects
Voltage reference AD680JR after Proton irradiation 3.3E10 / 39 Gy
2.480
2.485
2.490
2.495
2.500
2.505
2.510
2.515
2.520
61 62 63 64 65 66 67 69 70 71 72
ELMB
Vo
ltag
e (V
) Specifications = ± 10 mV
The average change is = 0.6 ± 2.0 mV
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 14
ATLASATLAS DCS
NIEL NIEL test Prosperotest Prospero
AD680JR Voltage Reference after Neutron test
2.480
2.485
2.490
2.495
2.500
2.505
2.510
2.515
2.520
108 107 114 113 112 111 109 105 110 106
ELMB
Ou
tpu
t V
olt
ag
e (
V)
Specifications = ±10 mV
3*1012 n/cm26*1011n/cm2
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 15
ATLASATLAS DCS
SEE effects: SRAMSEE effects: SRAMAddresses where SEE were detected in SRAM
1000
1500
2000
2500
3000
3500
0.0E+00 5.0E+10 1.0E+11 1.5E+11 2.0E+11 2.5E+11 3.0E+11 3.5E+11
Number of protons/cm2
Ad
dre
ss
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 16
ATLASATLAS DCS SEE Results: MemoriesSEE Results: Memories
No of bits tested No of errors Cross-section cm2/bit
SRAM 16384 2320 4.3*10-13
EEPROM 28672 <1 <1.1*10-16
FLASH 1048576 <1 <2.9*10-18
CAN reg. 320 23 2.2*10-13
ADC reg. 264 22 2.5*10-13
No errors were found in Flash memory and EEPROM!
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 17
ATLASATLAS DCS Radiation RequirementsRadiation Requirements
SEE category / Symptoms Error recovery Maximum allowed rate
Soft SEE/ Data readout errors Automatic 1 per 10 min per CAN branch
Soft SEE / CAN node hangs Software reset 1 per 24 h per CAN node
Soft SEE / CAN branch hangs Power cycling 1 per 24 h per CAN branch
Hard SEE / Permanent error Replace ELMB 1 per months for 3000 ELMBs
Destructive SEE / Damage Power limitation Not allowed
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 18
ATLASATLAS DCS ResultsResults
SimulatedRadiation
Levels for 10yWorst case MDT
SafetyFactor
Simulation
SafetyFactor
Low DoseRate Effects
SafetyFactorLot 2)
RequiredRadiationToleranceCriteria
Results
TID 6.4 Gy 3.5 11) 2 44.8 Gy >39 Gy(60 MeV protons)
NIEL(equiv.
1MeV)
2.9*1011 n*cm-2 5 1 2 2.9*1012 n*cm-2 3*1012 n*cm-2
(5 devices)
SEE 4.8*1010 h*cm-2 5 1 2
Power cyc. = 2*10-7
SW reset = 1*10-5
Automatic = 5*10-4
Hard SEE =1*10-9
Destr. SEE = 0
Power cyc. = 6*10-8
SW reset = 7*10-8
Automatic = 3*10-7
Hard SEE < 1*10-8
Destr. SEE < 1*10-8
1) Extended TID tests applied both for CMOS and Bipolar devices.2) Homogeneous lot - if not the factor is 4.
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 19
ATLASATLAS DCS Summary Radiation ToleranceSummary Radiation Tolerance
Radiation pre-qualification finished Radiation pre-qualification finished DCS IWN 9-12 Summary paper given at the 7th Workshop on Electronics for LHC
Experiments, Stockholm, Sweden, September 2001
Subdetectors have to decide, where to use ELMBSubdetectors have to decide, where to use ELMB e.g. Muons, Assessment of Electronics Coordination:
SEE looks ok, more precaution (SW) and automatic recovery needed NIEL looks ok TID at the limit, study position of ELMB on some chambers EC1
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 20
ATLASATLAS DCS NeedNeed
Envisaged usage of ELMBEnvisaged usage of ELMB “standard” use (with ADC)
MDT: 1200 infrastructure and other subdetectors : 1000 other LHC experiments ???
“special” use (w/o ADC, special SW) TGC: 1000 RPC: 1000
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 21
ATLASATLAS DCS
Estimated CostEstimated Cost
QuantityQuantity ~300 pc~300 pc ~4000 pc~4000 pc MicrocontrollerMicrocontroller $70 $70 $50 $50 ADCADC $50 $50 $40 $40
$120$120 $90 $90 Overhead 30%? $40 $30Overhead 30%? $40 $30 Total Total $160 $120$160 $120 Catalog price (1pc)Catalog price (1pc) $320 $320 (>1k) $160 (>1k) $160
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 22
ATLASATLAS DCS Next Steps (1)Next Steps (1)
Work to doWork to do simplify PCB (8 ==> 6 layers) cabling/powering of full branch automatic detection of and recovery from SEE Final connection to SCADA PVSS
HW: interface card SW: OPC, driver Distribution of functions (see DCS-IWN 13)
H.J.Burckhart, Muon Electronics Meeting, December 11th 2001 23
ATLASATLAS DCS Next Steps (2)Next Steps (2)
Procurement Procurement production in industry (allow 1-2 years !!!)
Market Survey procedure has been started Tendering, need commitments (pledges !) from ATLAS institutes pre-series of 500-1000 next year (not for UX) final series 2003/2004 (?)
Combined/separate production of ELMB with and w/o ADC ? Support by the CERN electronics pool
Probably a shortage of ELMBs next year !Probably a shortage of ELMBs next year !
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