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2006-11-15
Tian-Wei Huang–NTUSlide 1
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Project: IEEE P802.15 Working Group for Wireless Personal Area NProject: IEEE P802.15 Working Group for Wireless Personal Area Networks (WPANs)etworks (WPANs)
Submission Title: [Millimeter-wave CMOS RFIC]Date Submitted: [15 November, 2006]Source: [Tian-Wei Huang] Company [Department of Electrical Engineering, National Taiwan University]Address [No.1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, R.O.C. ]Voice:[+886 2 2363 5251x342], FAX: [+886 2 3366 5084], E-Mail:[twhuang@cc.ee.ntu.edu.tw]Re: []
Abstract: [Description of the current status of CMOS RFIC development]Purpose: [Contribution to TG3c at November 2006 meeting.]Notice: This document has been prepared to assist the IEEE P802.15. It is offered as a basis for discussion and is not binding on the contributing individual(s) or organization(s). The material in this document is subject to change in form and content after further study. The contributor(s) reserve(s) the right to add, amend or withdraw material contained herein.Release: The contributor acknowledges and accepts that this contribution becomes the property of IEEE and may be made publicly available by P802.15.
2006-11-15
Tian-Wei Huang–NTUSlide 2
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Millimeter-wave CMOS RFIC
Tian-Wei Huang
National Taiwan University
November 15, 2006
2006-11-15
Tian-Wei Huang–NTUSlide 3
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
AgendaAgenda• Gbps CMOS Modulator/Transmitter
• CMOS Low-Noise Amplifier
• CMOS Active Mixer and VCO
• SiGe 60-GHz Transmitter with Integrated Antenna
2006-11-15
Tian-Wei Huang–NTUSlide 4
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
A 60-GHz 2.5-Gbps CMOS BPSK Modulator
•Modified reflection-type •0.13 μm CMOS technology•Chip size : 0.5 × 0.35 mm2
•Frequency: 15-75 GHz•Phase Imbalance < 3°•Amplitude Imbalance < 0.5 dB•Modulation bandwidth > 1 GHz
Hong-Yeh Chang, Pei-Si Wu, Tian-Wei Huang, Huei Wang, Yung-Chih Tsai, and Chun-Hung Chen “An ultra compact and broadband
15-75 GHz BPSK modulator using 0.13-μm CMOS process,” 2005 IEEE MTT-S IMS Digest, Long Beach, CA, June 2005.
LORF
IF+
IF-
2.5-Gbps at 60 GHz
2006-11-15
Tian-Wei Huang–NTUSlide 5
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
CMOS MMW IQ Modulator
BPSK (I)
BPSK (Q)
Bro
adsi
de c
oupl
er
R2
IN
oZ2
oZ2
OUTR3
IP
IN
QP
QN
Hong-Yeh Chang, and et al, “Design and analysis of CMOS broad-band compact high-linearity modulators for gigabit microwave/millimeter-wave applications,” IEEE Transactions on Microwave Theory and Techniques, Jan. 2006.
LO
RF
IP IN
QP QN
• TSMC 0.13-μm CMOS Process• Chip Size: 0.65 × 0.58 mm2
• Modified Reflection-type Modulator • Frequency: 20-40 GHz• Sideband Suppression > 20 dB• LO Suppression > 30 dB• Spurs Suppression > 30 dB• P1dB > -5 dBm• Conversion Loss < 13 dB• Modulation bandwidth > 1 GHz
29.95 29.97 29.99 30.01 30.03 30.05-90
-80
-70
-60
-50
-40
-30
Pow
er (d
Bm
)
Frequency (GHz)
Center: 30 GHzSPAN: 100 MHz
2006-11-15
Tian-Wei Huang–NTUSlide 6
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Measured output spectrum of the IQ modulator
2006-11-15
Tian-Wei Huang–NTUSlide 7
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Conversion loss and LO suppression
2006-11-15
Tian-Wei Huang–NTUSlide 8
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
A 0.13-μm mmW CMOS Transmitter
Hong-Yeh Chang, Tian-Wei Huang and Huei Wang, “A 45-GHz quadrature voltage controlled oscillator with a reflection-type IQ modulator in 0.13-μm CMOS technology,” 2006 IEEE MTT-S International Microwave Symposium Digest, San Francisco, CA, June 2006.
• Technology: 0.13 μm CMOS technology• Chip size: 0.85 x 0.6 mm2
• Frequency: 44.8-45.8 GHz, • Phase Imbalance < 1.8°, • Amplitude Imbalance < 0.7 dB• DC power consumption: 40mW
QVCO
IQ Modulator
IQ Modulator
2006-11-15
Tian-Wei Huang–NTUSlide 9
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
V-band 3-Stage Cascode LNA (0.13μm CMOS)• Gain > 20 dB from 51 to 57.5 GHz• NF < 8 dB from 50 to 57 GHz• Input P1dB : -22 dBm• IIP3 : -12 dBm at 56 GHz
Chieh-Min Lo, Chin-Shen Lin, and Huei Wang, “A Miniature V-band Three-Stage Cascode Low Noise Amplifier in 130nm CMOS Technology,” ISSCC 2006, San Francisco, Feb. 2006.
40 45 50 55 60 65 70-30-25-20-15-10-505
1015202530
S p
aram
eter
s (d
B)
Frequency (GHz)
S11 S21 S22
36/0.13
72/0.13 RFOUT
RFIN
VDD
Vg1
VDDVDD
Vg1 Vg1
Vg2 Vg2 Vg2
36/0.13
72/0.13
36/0.13
72/0.13
2006-11-15
Tian-Wei Huang–NTUSlide 10
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Q-band 3-Stage LNA (0.13μm CMOS)
0.75 mm x 0.7 mm
20 25 30 35 40 45 50-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
S21
S11
S22
Simulated Measured
Gai
n &
Ret
urn
Loss
es (d
B)
Frequency (GHz)
• Gain > 17 dB from 34 to 44 GHz• NF < 7 dB from 40 to 42 GHz• OP1dB : +4 dBm (Psat: +7dBm)• OIP3 : +14.5 dBm• Power dissipation: 24 mA at +1.5 V
Jeng-Han Tsai, Wei-Chien Chen, To-Po Wang, Tian-Wei Huang, and Huei Wang, " A Miniature Q-band Low Noise Amplifier Using 0.13-mm CMOS Technology," IEEE Microwave and Guided Wave Letters. Vol. 16, No. 6, pp. 327-329, June 2006.
2006-11-15
Tian-Wei Huang–NTUSlide 11
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Q-band 3-Stage LNA (Noise Figure)
34 36 38 40 42 44 462
3
4
5
6
7
8
9
10
11
12
Noi
se F
igur
e (d
B)
Frequency (GHz)
2006-11-15
Tian-Wei Huang–NTUSlide 12
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Q-band 3-Stage LNA (AM-AM & IP3)
-30 -25 -20 -15 -10 -5 0-10
-5
0
5
10
15
20
Pout
(dBm
) & G
ain
(dB)
Pin (dBm)
Pin-Pout Pin-Gain
-45 -40 -35 -30 -25 -20 -15 -10 -5 0 5-70
-60
-50
-40
-30
-20
-10
0
10
20
30
OIP3=14.5 dBm
Pout
(dBm
)
Pin (dBm)
Fund 3rd
2006-11-15
Tian-Wei Huang–NTUSlide 13
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Q-band CMOS LNA (Comparison)Ref. This work [5] [3] [4] [2]
Process 0.13µmCMOS
0.13µmCMOS
0.18µmCMOS
90nmCMOS
90nmSOI
CircuitTopology
3-stagecommonsource
3-stagecascode
3-stagecascode
2-stagecommonsource
1-stagecascode
3-dB BW(GHz)
10(34-44)
10(34-44)
5(37-42)
14(32-46)
16(26-42)
Peak Gain(dB)
20@43GHz
19@40GHz
7@40GHz
7.3@35GHz
11.9@35GHz
Chip Area(mm2)
0.525 1.43 2.04 N/A 0.18
Powerdissipation
24mA@1.5V
24mA@1.5V
100mA@3V
7mA@1.5V
17mA@2.4V
NF(dB)
6.3@41GHz N/A N/A N/A 3.6
@35GHzOP1dB(dBm) 4 -0.9 5 -5.75 4
OIP3 (dBm) 14.5 11.6 N/A 7 N/A
2006-11-15
Tian-Wei Huang–NTUSlide 14
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
0.3-25 GHz CMOS Gilbert-Cell Mixer
0.8 mm x 1.0 mmMing-Da Tsai and Huei Wang, “A 0.3-25-GHz ultra-wideband mixer using commercial 0.18-µm CMOS technology," IEEE Microwave and Wireless Component Letters, vol. 14, no. 11, pp. 522-524, Nov. 2004.
• 0.18-μm CMOS•Gilbert-cell mixer withLC ladder matching
network•Conversion Gain: +11 dBfrom 0.3-25 GHz•Isolation between LO and RF: > 20 dB•LO power: -1 dBm•IF: 10 MHz
2006-11-15
Tian-Wei Huang–NTUSlide 15
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
63 GHz CMOS VCO• 0.25-μm bulk CMOS • Push-push design using cross-
couple pair• 63 GHz output extracted through
50 ohm CPW and blocking capacitor
• Vdd fed through λ/4 line• Chip size: 0.45 x 0.7 mm2
• -85 dBc/Hz @ 1 MHz offset• Output frequency from 62 to 64.5
GHz• Better than 25 dB rejection• -4 dBm max. output power
Ren-Chieh Liu, Hong-Yeh Chang, Chi-Hsueh Wang, and Huei Wang, “A 63-GHz VCO using a standard 0.25-μm CMOS process,” 2004 International Solid-State Circuit Conference (ISSCC), pp. 446-447, San Francisco, Feb., 2004.
2006-11-15
Tian-Wei Huang–NTUSlide 16
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
114-GHz CMOS VCO•Implemented in TSMC 0.13-μm CMOS•Push-Push topology•First CMOS VCO above 100 GHz
fofo
2fo
0.42 x 0.48 mm2
Ping-Chen Huang, Ming-Da Tsai, Huei Wang, Chun-Hung Chen, and Chih-Sheng Chang, “A 114GHz VCO in 0.13μm CMOS technology,” 2005 International Solid-State Circuit Conference (ISSCC), pp. 404-405, San Francisco, Feb. 2005.
Lg1Lg2
M1M2
Cs1Cs2
Ls1Ls2
Cvar1Cvar2
λ/4 short stubfor 114GHz
Ld1Ld2
VDD
VGRg
Vo+ (57GHz)Vo
- (57GHz)
Vpp (114GHz)
Vctrl
BufferBuffer
2006-11-15
Tian-Wei Huang–NTUSlide 17
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
131-GHz VCO Using 90-nm CMOS
• 90-nm bulk CMOS technology
• Cross-coupled topology
• Coplanar waveguide (CPW)
& asymmetric coplanar slot (ACPS)
• 0.55 x 0.65 mm2
• 1.2 V / 27.6 mW (core)
• Output power: -11.4 dBm
• Phase noise: -108.4 dBc/Hz
@ 10 MHz offset (estimated)
• Tuning range: 2.2 GHz
Ping-Chen Huang, Ren-Chieh Liu, Hong-Yeh Chang, Chin-Shen Lin, Ming-Fong Lei, Huei Wang, Chia-Yi Su, and Chia-Long Chang, “A
131-GHz push-push VCO in 90-nm CMOS technology,” 2005 IEEE RFIC Symposium Digest, pp. 613-616, Long Beach, CA, June 2005.
M1M2
Vctrl
λ/4 @ 130GHz
VDD
2fo (130GHz)
fo- (65GHz) fo+(65GHz)
M3M4
Cvar2 Cvar1
L2 L1
2006-11-15
Tian-Wei Huang–NTUSlide 18
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
60-GHz Transmitter with Integrated Antenna
Chi-Hsueh Wang, Yi-Hsien Cho, Chin-Shen Lin, Huei Wang, Chun-Hsiung Chen, Dow-Chih Niu, John Yeh, Chwan-Ying Lee, and John Chern,“A 60-GHz transmitter with integrated antenna in 0.18-mm SiGe BiCMOS technology,” 2006 International Solid-State Circuit Conference (ISSCC), San Francisco, CA, Feb. 2006.
• Technology: 0.18-μm SiGe BiCMOS process• Chip size: 1.3 x 0.8 mm2
• Conversion gain: 20.2 dB• Output power: 15.8 dBm• DC power consumption: 281 mW
2006-11-15
Tian-Wei Huang–NTUSlide 19
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Antenna DesignWith antenna director Without antenna director
E field mostly confined at surfaceAntenna gain increased: -10 dBi → 0 dBi (simulated)Results in narrow bandwidth
2006-11-15
Tian-Wei Huang–NTUSlide 20
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
60GHz Transmitter Module
Antenna director fabricated using Duroid 5880Director placed at ~ half wavelength (at 60 GHz) away from taper-slot antenna
Antenna director
2.35mm
2006-11-15
Tian-Wei Huang–NTUSlide 21
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Measurement Setup
Transmitted IF signal generated using Agilent E4438CReceiver consists of
– Standard horn antenna with 24dB gain– Agilent 8565EC spectrum analyzer– Agilent 11974V pre-selection harmonic mixer
2006-11-15
Tian-Wei Huang–NTUSlide 22
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Radiation Pattern
Antenna gain improved by off-chip director Taper-slot antenna gain ~ -2 dBi with director
~ -15 dBi without directorSSB isotropic conversion gain ~ 20.2 dB
-20
-15
-10
-5
00
30
60
90
120
150
180
210
240
270
300
330
-20
-15
-10
-5
0
with directorwithout director
E-plan (co-polar) H-plan (co-polar)
-30
-20
-10
00
30
60
90
120
150
180
210
240
270
300
330
-30
-20
-10
0
with directorwithout director
2006-11-15
Tian-Wei Huang–NTUSlide 23
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
SummaryThe mmW CMOS modulator/LNA/mixer/VCO are presented.A mmW CMOS broadband/compact (low-cost) direct-conversion digital transmitter is demonstrated. The 60-GHz CMOS transceiver is under development.A 60-GHz SiGe HBT transmitter with integrated antenna is measured with gain enhancement techniques.
2006-11-15
Tian-Wei Huang–NTUSlide 24
doc.: IEEE 802.15-06/0475r0
TG3c Presentation
Thank you!
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