analytical model progress
TRANSCRIPT
-
8/6/2019 Analytical Model Progress
1/22
1
Analytical Model Progress
Andr Sopczak
Lakhdar Dehimi,Salim Aoulmitand Khaled Bekhouche
-
8/6/2019 Analytical Model Progress
2/22
2
OUTLINE
Introduction
Updated analytical model for CP-CCD
Comparison with full simulations Effect of edges (suggestions)
Conclusion
-
8/6/2019 Analytical Model Progress
3/22
3
Introduction
Models:Hardy model
with assumption
Where
temit is the total emission time from the previous packet=tw
tjoin is the time during which the charges can join their parent packet
ec
( )eemittejoints
t een
NCTI
= 2
Improved Hardy model : include capture time
( )( )eemittejointcshts
t eeen
NCTI
= 12
tsh is the shift time, that is the time spend under each node
-
8/6/2019 Analytical Model Progress
4/22
4
Updated CTI Analytical Model
The fraction of filled traps(rf):
s
f
ce
f
c
ffrrr
dt
dr
=
= 11
( ) ( )c
s
sc
s
ff
trtr
+
= exp0
( ) ( ){ }0ff
s
t rtr
N
NCTI =
t
f
fN
nr =
Where
nf is the density of filled traps
Nt is the density of traps
-
8/6/2019 Analytical Model Progress
5/22
-
8/6/2019 Analytical Model Progress
6/22
6
Model for CP-CCD (2-phase)
rf1A
is the fraction of filled trap under node1 during time t1(when
signal packet is present).
( ) ( )c
s
s
t
c
sfrt
Afr
+=
1exp011
( ) ( )
=
e
AfBf
ttrtr
2
1121exp
rf1B is the fraction of filled trap under node1 during time t2 (when
signal packet is present under the second node).
(1)
(2)
-
8/6/2019 Analytical Model Progress
7/22
7
( ) ( )c
s
sc
s
fBf
trtr
+
= 2
22exp0
( ) ( ) = eBfCf ttrtr
1
2212 exp
rf2B is the fraction of filled trap under node2 during time t2 (when signal
packet is present).
rf2C is the fraction of filled trap under node2 during time t1 (when signal
packet is present under the first node of the next pixel).
(3)
(4)
-
8/6/2019 Analytical Model Progress
8/22
8
So the CTI is the sum of the CTI under each node
21 CTICTICTI +=( ) ( ) ( ){ }02
1221 fCfBf
s
t rtrtrn
NCTI +=
rf(0) is defined by considering the fact that initially all taps
are filled and emit during the waiting time and then:
( )
=
e
w
f
t
r exp0
(5)
(6)
(7)
-
8/6/2019 Analytical Model Progress
9/22
-
8/6/2019 Analytical Model Progress
10/22
10
Case of t1=t2 =t
+
+=
e
wt
e
t
es
t
s
t
e
s
ec
t
sn
tN
CTI
expexp
11
exp1
exp1
21
exp12
-
8/6/2019 Analytical Model Progress
11/22
11
Comparison with Full SimulationsComparison of AM, Updated, Full simulations Glasgow and Lancaster for the 0.17 eV trap
100 120 140 160 180 200 220 2400
0.05
0.1
0.15
0.2
0.25
Temperature(K)
CTI(%)
ImpAM
UpdatedAM
Full SimGlasgow
Full SimLancaster
0.17eV50MHz
1e12/cm 3
Occ=1%
-
8/6/2019 Analytical Model Progress
12/22
12
Comparison of AM, Updated, Full simulations Glasgow and Lancaster for the 0.44 eV trap
200 250 300 350 400 450 500 5500
0.02
0.04
0.06
0.08
0.1
0.12
Temperature(K)
CTI(%)
ImpAM
UpdatedAM
Full SimGlasgow
Full SimLancaster
0.44eV50MHz
1e12cm -3
Occ=1%
-
8/6/2019 Analytical Model Progress
13/22
-
8/6/2019 Analytical Model Progress
14/22
-
8/6/2019 Analytical Model Progress
15/22
15
Comparison Updated Model with Full
Simulation (Dima) for 0.17 eV at 10 MHz
100 120 140 160 180 200 220 2400
0.1
0.2
0.3
0.4
0.5
0.6
Temperature(K)
CTI(%)
UpdatedAM
Full Sim
0.17eV10MHz
1e12cm -3
Occ=1%
-
8/6/2019 Analytical Model Progress
16/22
16
Comparison Updated Model with Full
Simulation (Dima) for 0.17 eV at 15 MHz
100 120 140 160 180 200 220 2400
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
Temperature(K)
CTI(%)
UpdatedAM
Full Sim
0.17eV15MHz
1e12cm -3
Occ=1%
-
8/6/2019 Analytical Model Progress
17/22
17
Comparison Updated Model with Full
Simulation (Dima) for 0.17 eV at 25 MHz
100 120 140 160 180 200 220 2400
0.05
0.1
0.15
0.2
0.25
0.3
0.35
Temperature(K)
CTI(%)
UpdatedAM
Full Sim
0.17eV25MHz
1e12cm -3
Occ=1%
-
8/6/2019 Analytical Model Progress
18/22
-
8/6/2019 Analytical Model Progress
19/22
19
Edges Effect
Substrate
x
n p
wp0-wn -xt1
EC
EV
EFi
-xt2
V2
V1
Ef
Et1
Et2
Et1,2 are the trap energy levels,
EC and EV are respectively the conduction and the valence band,
Efand EFi are respectively Fermi level and intrinsic Fermi level,
wn and wp are the edges of the depletion region,xt1,2 are the intersection points of Fermi level with trap energy level.
1 m
Gate
Insu
lat
or
-
8/6/2019 Analytical Model Progress
20/22
20
Xt is not the same for both traps (0.17,
0.44 eV) depending on the energy level.
Volume is then calculated by means of Xt
for each trap.
-
8/6/2019 Analytical Model Progress
21/22
21
Conclusion
Updated model is a systematicdevelopment from Hardy original model.
Updated model agrees better with Full
Simulation. As the frequency is increasing the fast
and full simulation agree better.
Volume of the ionised traps depends ontrap level (Effect of volume changeunderstudy).
-
8/6/2019 Analytical Model Progress
22/22
22
Next: List of systematic uncertainties
Doping profile, Clock voltage (form and amplitude), we suggest to
use a rectangular or square signal,