and pixel detector - infn genova · ingrid-maria gregor (university wuppertal) for the atlas...
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![Page 1: and Pixel Detector - INFN Genova · Ingrid-Maria Gregor (University Wuppertal) for the ATLAS collaboration June 6th, 2000 Optical Links for the ATLAS S C T and Pixel Detector International](https://reader036.vdocument.in/reader036/viewer/2022070113/605b3c091eb56179d67314f0/html5/thumbnails/1.jpg)
Ingrid-Maria G regor(Univers ity Wuppertal)
for the AT LAScollaboration
J une 6th, 2000
Optical Links for the AT LAS S C Tand P ixel Detector
International Workshop on S emiconductor P ixel Detectorsfor P articles and X-R ays
G enova, Italy J une 2000
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2P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
Overview
➤ AT LAS Inner Detector
➤ Optical Link Architecture
➤ S ystem T ests
➤ C onclus ion
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3P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
AT LAS Inner Detector
Forward SCT
Barrel SCT
TRT
Pixel Detectors
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4P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
Data T ransfer
➤ C ontrol and clock information must be transferred fromacquis ition system to the s ilicon detectors
➤ Hit data must be transferred from the modules to a remoteacquis ition system
➤ use of copper links unfeas ible➢ large amount of dead material which would be introduced
➢ problems from cross-talk and ground loops
➤ it is proposed to use custom optical links to transfer data toand from the detector modules (S C T and P ixel Detector)
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5P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
S pecial R equirements (1)
➤ radiation hardness➢ ionizing radiation : 100kG y (S C T ) to 550kG y (P ixel
detector)
➢ 1 billion lung x-rays
➢ neutron radiation :➣ S i-devices : 1*1015 n(1MeV )/cm2
➣ G aAs-devices : up to 6.4*1015 n(1MeV )/cm2
➢ expected over the 10 year lifetime of AT LAS (1s t layer)
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6P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
S pecial R equirements (2)
➤ non-magnetic to avoid perturbing the inner detectormagnetic field
➤ low mass➢ additional interactions in non-instrumented regions of the
detector would compromis e the quality of momentummeasurements
➢ particle convers ion
➤ reasonably low cost
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7P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
R ead-Out Link Architecture
V ertical C avity S urface E mitting Las er
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8P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
T iming T riggering and C ontrol (T T Clink)
➤ V C S E L Driver B iP hase Mark E ncoder
➤ driver chip for V C S E L on acquis ition s ide (12 way)
➤ 40MHz-C lock and C ommands on one link
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9P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
T T C Link
➤ Digital Optical R eceiver IC
➤ decodes the s ignals received by the P IN
➤ recovers commands and 40MHz-clock
➤ LV DS output
➤ 2 vers ions : bipolar (S C T ) and C MOS (P ixel)
➤ S C T redundancy system: T T C data can betaken from redundancy link from aneighbouring data
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10P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
Data Link
➤ V C S E L Driver C hip
➤ LV DS input
➤ 40Mbit/s (S C T ), 80Mbit/s (P ixel 1st and 2ndlayer) or 160Mbit/s (B -layer)
➤ NR Z (20MHz = 40Mbit/s )
➤ 2 vers ions : bipolar (S C T ) and C MOS (P ixel)
➤ S C T : in the event of failure, the data can bererouted through the second link
➤ P ixel: one link for outer layers , two for B -layer(160MB it/sec)
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11P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
Opto-P ackage S pecs
➤ C ustom package made of material with low Z, non-magnetic,with 2 V C S E Ls and 1 P IN
➤ F ibres attached without s tandard connector
➤ not larger than 5.5 mm x 5.5 mm x 1.6 mm
➤ package and including devices have to s tand radiation levels
➤ operation temperature during testing: -25oC to 40oC
➤ operation temperature during AT LAS : -25oC to 15oC
➤ three different des igns under survey
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12P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
T aiwan Opto-P ackage
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13P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
T aiwan Opto-P ackage
5.5 mm
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14P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
T aiwan Opto-P ackage
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15P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
Opto-E lbow (P ixel)
Module P igtail
Opto E lbow
B ending Zone
S older C onnec tion S ingle S ide
G lue Attachment & Wire B onding
DOR IC VDC Opto-Pac kage
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16P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
Opto P ackage S upport (S C T )
VDC (VC S E L Driver C hip)
DOR IC (R eceiver C hip)
VC S E L/PIN Package
ZIF C onnector
K apton C able
Opto Hybrid
Module C onnec tor
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17P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
S ystem T ests
➤ C haracteristics of opto-link for this systemunder test:➢ R adiation and Annealing studies
➢ Lifetime s tudies
➢ B it E rror R ate
➢ S ingle E vent Ups ets
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18P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
Annealing S tudies of V C S E L
00:00 24:00 48:00 72:00 96:000,0
0,2
0,4
0,6
0,8
1,0
Aver
age
Rel
ativ
e Li
ght O
utpu
t (R
LO)
Annealing time [h]
RLO of VCSEL (group A) annealed at 10mA RLO of VCSEL (group A) annealed at 20mA RLO of VCSEL (group B) annealed at 10mARLO of VCSEL (group B) annealed at 20mA
Light Output before Irradiation
Light Output after IrradiationRLO =
R adiation levels :
214
214
10*5B
10*8A
cmn
cmn
=
=
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19P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
V C S E L tes ts
➤ V C S E Ls were not powered during irradiation
➤ radiation induced damages can be annealed up to 90%over a period of days/weeks
➤ results suggest brief 20 mA current annealing sess ions
➤ following aging tests showed an expected lifetime of a fewhundred years (irradiated)
➤ further irradiation and lifetime tests are under way (up toP ixel level of 6.4*1015 n(1MeV )/cm2)
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20P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
B it E rror R ate (B E R )
B E R vs lightinpu t
1 . E - 1 1
1 . E - 1 0
1 . E - 0 9
1 . E - 0 8
1 . E - 0 7
1 . E - 0 6
1 . E - 0 5
1 . E - 0 4
1 . E - 0 3
1 . E - 0 2
1 . E - 0 1
1 . E + 0 0
1 . E + 0 1
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0 2 0 0 2 2 0 2 4 0
L igh tinpu t ( m W )
BE
R
PIN-BIAS = 5VPIN-BIAS = 0V
➤ B E R : good parameter to evaluatethe performance of the optolink
910BER −<=bits
errorNN
➤ G ood results with S C T link
➤ P ixel test under way
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21P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
S ingle E vent Upsets
➤ S ingle E vent Upsets caused by a very high energydeposition in a small volume of electronics chips
➤ most sens itive region: reverse-biased p/n junctionwhere high electric field is very effective in collectingthe charge by drift
➤ P IN = reverse biased p/n junction
➤ 100µm x 50µm x 50µm !
➤ F irst S E U appearance : NP L neutron beam
➤ test with pions at P S I
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22P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
S E U at P S I
➤ S ensitive poweraround 100µW
➤ for P >350µW, B E R<10-10s -1
➤ discrepancybetween counterand Al foil
➤ repeat next week
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23P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
C onclus ion
➤ data transfer us ing optical links
➤ custom packaging developments for the 40 Mb/s opticallink show good phys ical results
➤ design of complete P ixel opto-link under way
➤ radiation induced damages can be annealed up to 90%over a period of days
➤ results suggest brief 20 mA current annealing sess ions
➤ S E U problems can be fixed by sending more light
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24P ixel2000 G enova, Italy
Ingrid-Maria G regor Univers ity of Wuppertal
C onclus ion
➤ http://www.atlas .uni-wuppertal.de/ Optolink/P ix_Optolink.html