ao4702
TRANSCRIPT
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Symbol UnitsVDS VVGS V
T A=25C
T A=70C
IDMVKA V
T A=25C
T A=70C
IFMT A=25C
T A=70CI AR AE AR mJ
TJ , TSTG C
Absolute Max imum Ratings T A=25C unless otherwise noted
Parameter MOSFET Schottky
Gate-Source Voltage 20
Drain-Source Voltage 30
A9.3
Pulsed Drain Current B 50
Continuous Drain Current AFID
11
Schottky reverse voltage 30
Continuous Forward Current AFIF
4.4 A3.2
Pulsed Diode Forward Current B 30
Junction and Storage Temperature Range -55 to 150 -55 to 150
Power DissipationP
D
3 3
W2 2 Avalanche Current B
Repetitive avalanche energy 0.3mH B17
43
AO4702N-Channel Enhancement Mode Field Effect Transistor withSchottky Diode
Features
VDS (V) = 30VID = 11A (V GS = 10V)R DS(ON) < 16m (VGS = 10V)R DS(ON) < 25m (VGS = 4.5V)
SCHOTTKYVDS (V) = 30V, I F = 3A, V F
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Symbol Typ Max31 4059 75
RJL 16 24
Symbol Typ Max36 4067 75
RJL 25 30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICALCOMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Thermal Characteristics : MOSFETParameter UnitsMaximum Junction-to-Ambient A t 10s RJA
C/W
Steady-State C/W
C/WMaximum Junction-to-Ambient A Steady-State
Thermal Characteristics: Schottky
Maximum Junction-to-Lead C Steady-State C/W
Maximum Junction-to-Lead C Steady-State C/W
Parameter UnitsMaximum Junction-to-Ambient A t 10s RJA
C/WMaximum Junction-to-Ambient A
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment withT A=25C. The value in any given application depends on the user's specific board design.B: Repetitive rating, pulse width limited by junction temperature.C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using
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Symbol Min Typ Max Units
BVDSS 30 V
0.007 0.05
3.2 10
12 20IGSS 100 nAVGS(th) 1 1.8 3 VID(ON) 40 A
13.4 16TJ=125C 16.8 21
20 25 m
gFS 25 SVSD 0.45 0.5 VIS
5 A
C iss 1040 1250 pFCoss 212 pFC rss 121 170 p FRg 0.35 0.7 0.85
Qg(10V) 19.8 24 nCQg(4.5V) 9.8 12 nCQgs 2.5 nCQgd 3.5 nCtD(on) 4.5 7 ns
tr 3.9 7 nstD(off) 17.4 30 nstf 3.2 5.7 ns
trr 19 23 nsQ rr 9 11 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off Fall Time
VGS =10V, I D=11A
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS =10V, V DS=15V, I D=11A
Total Gate Charge
Gate Drain Charge
Reverse Transfer Capacitance
VGS =0V, V DS =15V, f=1MHz
SWITCHING PARAMETERS
VGS =10V, V DS=15V, R L=1.35 ,R GEN =3
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Set by Schottky leakage)
Gate-Body leakage current
ID=250 A, V GS =0V
VR=30V
VDS =0V, V GS = 20V
Gate resistance
IS=1A,V GS =0V
VDS =5V, I D=11A
Electrical Characteristics (T J =25C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Body Diode + Schottky Reverse Recovery Time
VGS =0V, V DS =0V, f=1MHz
VR=30V, T J =125C
VR=30V, T J =150C
VDS =VGS ID=250 A
Maximum Body-Diode + Schottky Continuous Current
Input Capacitance
Static Drain-Source On-Resistance
Forward Transconductance
Diode + Schottky Forward Voltage
IDSS mA
Gate Threshold Voltage
RDS(ON)m
VGS =4.5V, I D=8A
Output Capacitance (FET+Schottky)
Body Diode + Schottky Reverse Recovery Charge IF=11A, dI/dt=100A/ s
On state drain current V GS =4.5V, V DS=5V
IF=11A, dI/dt=100A/ s
Total Gate Charge
Gate Source Charge
Turn-On Rise TimeTurn-Off DelayTime
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment withT A=25C. The value in any given application depends on the user's specific board design.B: Repetitive rating, pulse width limited by junction temperature.C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
0
5
10
15
20
25
30
0 1 2 3 4 5
VDS (Volts)Fig 1: On-Region Characteristic s
I D ( A )
VGS =3V
3.5V
4V
4.5V
10V
0
4
8
12
16
20
1.5 2 2.5 3 3.5 4
VGS (Volts)Figure 2: Transfer Characteristics
I D ( A )
10
12
14
16
18
20
22
24
0 5 10 15 20
ID (A)Figure 3: On-Resistance vs. Drain Curr ent and
Gate Voltage
R D S ( O N )
( m
)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)Figure 6: Body-Diode Characteristics
I S ( A )
25
125C
FET+SCHOTTKY
0.8
1
1.2
1.4
1.6
0 25 50 75 100 125 150 175
Temperature (C)Figure 4: On-Resistance vs. Junct ion Temperature
N o r m a l
i z e d
O n - R e s
i s t a n c e V
GS =10V
VGS =4.5V
10
20
30
40
50
60
2 4 6 8 10VGS (Volts)
Figure 5: On-Resistance vs . Gate-Source Volt age
R D S ( O N )
( m
)
25C
125C
VDS =5V
VGS =4.5V
VGS =10V
ID=11A
25C
125C
ID=11A
Alpha & Omega Semi conductor, L td . www.aosmd.com
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
0
2
4
6
8
10
0 4 8 12 16 20
Q g (nC)Figure 7: Gate-Charge Characteristics
V G S
( V o
l t s )
0
250
500
750
1000
1250
1500
0 5 10 15 20 25 30VDS (Volts)
Figure 8: Capacitance Characteristics
C a p a c
i t a n c e
( p
F ) C iss
Coss FET+SCHOTTKY
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100 1000Pulse Width (s)
Figure 10: Single Pulse Power Rating Junct ion-to- Ambien t (No te E)
P o w e r
( W )
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance
Z J A
N o r m a l
i z e d
T r a n s i e n
t
T h e r m a l
R e s
i s t a n c e
C rss
0.1
1.0
10.0
100.0
0.1 1 10 100VDS (Volts)
I D ( A m p s )
Figure 9: Maximum Forw ard Biased SafeOperating Area (Note E)
100 s
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)limited
TJ(Max) =150CT A=25C
VDS =15VID=11A
Single Pulse
D=T on /TTJ,PK =T A+P DM.ZJA .R JAR JA=40C/W
TonT
P D
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max) =150CT A=25C
10 s
Alpha & Omega Semi conductor, L td . www.aosmd.com