Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET

Low on-resistance BVDSS 20V Capable of 2.5V gate drive RDS(ON) 50m Low drive current ID 20A Single Drive Requirement

Description

Absolute Maximum RatingsSymbol Units

VDS VVGS VID@TC=25 A

ID@TC=125 AIDM APD@TC=25 W

W/TSTG TJ

Symbol Value UnitRthj-c Thermal Resistance Junction-case Max. 4.8 /WRthj-a Thermal Resistance Junction-ambient Max. 110 /W

Data and specifications subject to change without notice 200218032

AP9915H/J

Parameter RatingDrain-Source Voltage 20Gate-Source VoltageContinuous Drain Current, VGS @ 4.5V 20

Continuous Drain Current, VGS @ 4.5V 16Pulsed Drain Current1 41Total Power Dissipation 26

-55 to 150Operating Junction Temperature Range -55 to 150

Linear Derating Factor 0.2

Thermal DataParameter

Storage Temperature Range

The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness.

12

G D S TO-252(H)

G DS TO-251(J)

G

D

S

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Electrical Characteristics@Tj=25oC(unless otherwise specified)Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V

BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.03 - V/

RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A - - 50 m

VGS=2.5V, ID=5.2A - - 80 m

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1.2 Vgfs Forward Transconductance VDS=10V, ID=6A - 13 - SIDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA

Drain-Source Leakage Current (Tj=125oC) VDS=16V ,VGS=0V - - 25 uA

IGSS Gate-Source Leakage VGS= - - nA

Qg Total Gate Charge2 ID=10A - 7.5 - nC

Qgs Gate-Source Charge VDS=20V - 0.9 - nC

Qgd Gate-Drain ("Miller") Charge VGS=5V - 4 - nC

td(on) Turn-on Delay Time2 VDS=10V - 4.5 - ns

tr Rise Time ID=10A - 49.5 - ns

td(off) Turn-off Delay Time RG=3.3,VGS=5V - 12 - ns

tf Fall Time RD=1 - 6 - ns

Ciss Input Capacitance VGS=0V - 195 - pF

Coss Output Capacitance VDS=20V - 126 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF

Source-Drain DiodeSymbol Parameter Test Conditions Min. Typ. Max. Units

IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 20 A

ISM Pulsed Source Current ( Body Diode )1 - - 41 A

VSD Forward On Voltage2 Tj=25, IS=20A, VGS=0V - - 1.3 V

Notes:1.Pulse width limited by safe operating area.2.Pulse width

AP9915H/J

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature

0

10

20

30

40

50

0 1 2 3 4 5 6

V DS , Drain-to-Source Voltage (V)

I D ,

Dra

in C

urre

nt (A

)

T C =25o C

V GS =1.5V

2.5V

4.5V

3.5V

0

10

20

30

40

0 1 2 3 4 5 6 7

V DS , Drain-to-Source Voltage (V)

I D ,

Dra

in C

urre

nt (A

)

T C =150o C

V GS =1.5V

2.5V

3.5V

4.5V

30

40

50

60

1 2 3 4 5 6

V GS (V)

RD

S(O

N) (

m

)

I D = 6 A

T C =25o C

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 0 50 100 150

T j , Junction Temperature (o C)

Nor

mal

ized

RD

S(O

N)

V GS =4.5V

I D =6A

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Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

AP9915H/J

0

10

20

30

40

50

60

0 50 100 150

T c , Case Temperature ( o C)

P D (W

)

0.1

1

10

100

1000

0.1 1 10 100

V DS (V)

I D (A

)

T c =25o C

Single Pulse

10us

1ms

10ms100ms

100us

0

5

10

15

20

25

25 50 75 100 125 150

T c , Case Temperature ( o C)

I D ,

Dra

in C

urre

nt (A

)

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Nor

mal

ized

The

rmal

Res

pons

e (R

thjc)

PDM

Duty Factor = t/TPeak Tj = PDM x Rthjc + TC

t

T

0.02

0.01

0.05

0.1

0.2

Duty Factor = 0.5

Single Pulse

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AP9915H/J

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature

0.2

0.45

0.7

0.95

1.2

-50 0 50 100 150

T j , Junction Temperature ( o C )

V GS(

th) (

V)

0.01

0.1

1

10

100

0 0.4 0.8 1.2 1.6V SD (V)

I S (A

)

T j =25o C

T j =150o C

10

100

1000

1 5 9 13 17 21 25 29

V DS (V)

C (p

F)

f=1.0MHz

Ciss

Coss

Crss

0

2

4

6

8

10

12

14

16

0 2 4 6 8 10 12 14 16 18 20

Q G , Total Gate Charge (nC)

V GS ,

Gat

e to

Sou

rce

Volta

ge (V

)

I D =20A

V DS =16V

V DS =20V

V DS =12V

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AP9915H/J

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

td(on) tr td(off) tf

VDS

VGS

10%

90%

Q

VG

5V

QGS QGD

QG

Charge

0.5x RATED VDS

TO THEOSCILLOSCOPE

-

+5 v

D

G

S

VDS

VGS

RG

RD

RATED VDS

TO THEOSCILLOSCOPE

-

+

D

G

S

VDS

VGS

ID

IG

1~ 3 mA

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