apm3054n

N-Channel Enhancement Mode MOSFET

Copyright ANPEC Electronics Corp.Rev. A.2 - Aug., 2002

APM3054N

www.anpec.com.tw1

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advisecustomers to obtain the latest version of relevant information to verify before placing orders.

G D S

1 2 3

Pin Description

Ordering and Marking Information

Features

Applications

Switching Regulators

Switching Converters

Top View of TO-252

Absolute Maximum Ratings (TA = 25C unless otherwise noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage 30

VGSS Gate-Source Voltage 20V

ID Maximum Drain Current Continuous 15

IDM Maximum Drain Current Pulsed 30A

IS Diode Continuous Forward Current 8 A

30V/15A, RDS(ON)

=48m(typ.) @ VGS

=10V

RDS(ON)

=75m(typ.) @ VGS

=4.5V

Super High Dense Cell Design

High Power and Current Handling Capability

TO-252 and SOT-223 Package SDG

1 2 3

Top View of SOT-223

G D S

1 2 3

Top View of SOT-89

P acka ge C ode

D : S O T -89 U : T O -2 52 V : S O T -223

O pera ting Jun c tion T em p. R ange

C : -5 5 to 125 C

H a nd ling C ode

T R : T ape & R ee l

APM 3054N

H a nd ling C ode

T em p. R ange

P acka ge C ode

A P M 30 54N U : A P M 30 54NX X X X X

- D ate C o deX X X X X

X X X X X - D a te C odeA P M 30 54N D /V :A P M 30 54N

X X X X X


APM3054N

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APM3054NSymbol Parameter Test Condition

Min. Typ. Max.Unit

Static

BVDSSDrain-Source BreakdownVoltage VGS=0V, IDS=250A 30 V

IDSSZero Gate Voltage DrainCurrent

VDS=24V, VGS=0V 1 A

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250A 1 3 V

IGSS Gate Leakage Current VGS=20V, VDS=0V 100 nA

VGS=10V, IDS=12A 48 54RDS(ON)

Drain-Source On-state

Resistance VGS=4.5V, IDS=6A 75 90m

VSD Diode Forward Voltage ISD=8A, VGS=0V 0.6 1.3 V

Dynamic

Qg Total Gate Charge 9

Qgs Gate-Source Charge 5.4

Qgd Gate-Drain Charge

VDS=15V, VGS=5V,

IDS=10A2.4

nC

td(ON) Turn-on Delay Time 11

tr Turn-on Rise Time 17

td(OFF) Turn-off Delay Time 37

tf Turn-off Fall Time

VDD=15V,ID=2A,

VGS=10V, RG=6

20

ns

Ciss Input Capacitance 400

Coss Output Capacitance 75

Crss Reverse Transfer

VGS=0V

VDS=25V

Frequency=1.0MHz 45

pF

Absolute Maximum Ratings (Cont.) (TA = 25C unless otherwise noted)

Symbol Parameter Rating Unit

ISM Diode Maximum Pulse Current 32 A

TO-252 62.5TA=25C

SOT-223 3W

TO-252 25PD Maximum Power Dissipation

TA=100CSOT-223 1.2

W

TJ Maximum Junction Temperature 150 C

TSTG Storage Temperature Range -55 to 150 C

Electrical Characteristics (TA = 25C unless otherwise noted)


APM3054N

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Typical Characteristics

0 2 4 6 8 100

5

10

15

20

25

ID-D

rain

Cur

rent

(A)

Transfer Characteristics

TJ=-55C

TJ=25CTJ=125C

VGS - Gate-to-Source Voltage (V)

0 1 2 3 4 50

5

10

15

20

VDS - Drain-to-Source Voltage (V)

Output Characteristics

ID-D

rain

Cur

rent

(A)

VGS=5V

VGS=6,7,8,9,10V

VGS=3V

VGS=4V

-50 -25 0 25 50 75 100 125 1500.6

0.7

0.8

0.9

1.0

1.1

1.2

Threshold Voltage vs. Temperature

Tj - Junction Temperature (C)

VG

S(t

h)-T

hres

hold

Vol

tage

(V)

(Nor

mal

zed)

IDS=250uA

0 2 4 6 8 100.00

0.02

0.04

0.06

0.08

0.10

0.12

RD

S(o

n)-O

n-R

esis

tanc

e (

)

On-Resistance vs. Drain Current

VGS=4.5V

ID - Drain Current (A)

VGS=10V


APM3054N

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2 3 4 5 6 7 8 9 100.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

VGS - Gate-to-Source Voltage (V)

RD

S(o

n)-O

n-R

esis

tanc

e (

)

ID=6A

On-Resistance vs. Gate-to-Source Voltage

-50 -25 0 25 50 75 100 125 1500.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

RD

S(o

n)-O

n-R

esis

tanc

e (

)(N

orm

aliz

ed)

On-Resistance vs. Junction Temperature

VGS=10VID=12A

TJ - Junction Temperature (C)

-50 -25 0 25 50 75 100 125 1500.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

RD

S(o

n)-O

n-R

esis

tanc

e (

)

On-Resistance vs. Junction Temperature

VGS=10VIDS=12A

TJ - Junction Temperature (C)

2.5 5.0 7.5 10.0 12.5 15.00

2

4

6

8

10

Gate Charge

QG - Gate Charge (nC)

VG

S-G

ate-

Sou

rce

Vol

tage

(V)

VDS=15VIDS=10A


APM3054N

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0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.01

10

Source-Drain Diode Forward Voltage

IS-S

ourc

e C

urre

nt (A

)

TJ=150C TJ=25C

VSD -Source-to-Drain Voltage (V)

30

VDS - Drain-to-Source Voltage (V)

0 5 10 15 20 25 300

125

250

375

500

625

750

CrssCoss

Ciss

1E-3 0.01 0.1 1 10 100 10000

50

100

150

200

250

Pow

er (W

)

Single Pulse Power

Time (sec)

TO-252

Capacitance

Cap

acita

nce

(pF

)

0.01 0.1 1 10 100 10000

20

40

60

80

100

120

140

Pow

er (W

)

Single Pulse Power

Time (sec)

SOT-223


APM3054N

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Square Wave Pulse Duration (sec)

Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e

Normalized Thermal Transient Impedence, Junction to Ambient

D= 0.02

1E-4 1E-3 0.01 0.1 1 10 100 10001E-3

0.01

0.1

1

Duty Cycle = 0.5

D= 0.2

D= 0.1

D= 0.05

D= 0.01

SINGLE PULSE

1.Duty Cycle, D=t1/t22.Per Unit Base=RthJA=42C/W3.TJM-TA=PDMZthJA

SOT-223

1E-4 1E-3 0.01 0.1 1 10 100 10000.01

0.1

1

SINGLE PULSE

D=0.01

D=0.02

D=0.05

D=0.1

D=0.2

Duty Cycle=0.5

TO-252

Square Wave Pulse Duration (sec)

Nor

mal

ized

Effe

ctiv

e T

rans

ient

The

rmal

Impe

danc

e

Normalized Thermal Transient Impedence, Junction to Ambient

1.Duty Cycle, D=t1/t22.Per Unit Base=RthJA=50C/W3.TJM-TA=PDMZthJA


APM3054N

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D

D1

e

B1

e1

B

1 2 3

L

HE

C

a

a

A

SOT-89 (Reference EIAJ ED-7500A Reg stration SC-62)

Millimeters InchesDim

Min. Max. Min. Max.A 1.40 1.60 0.055 0.063B 0.40 0.56 0.016 0.022

B1 0.35 0.48 0.014 0.019C 0.35 0.44 0.014 0.017D 4.40 4.60 0.173 0.181

D1 1.35 1.83 0.053 0.072e 1.50 BSC 0.059 BSC

e1 3.00 BSC 0.118 BSCE 2.29 2.60 0.090 0.102H 3.75 4.25 0.148 0.167L 0.80 1.20 0.031 0.047 10 10

Package Information


APM3054N

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Package Information

TO-252( Reference JEDEC Registration TO-252)

Mill imeters InchesDim

Min. Max. Min. Max.

A 2.18 2.39 0.086 0.094

A1 0.89 1.27 0.035 0.050

b 0.508 0.89 0.020 0.035

b2 5.207 5.461 0.205 0.215

C 0.46 0.58 0.018 0.023

C1 0.46 0.58 0.018 0.023

D 5.334 6.22 0.210 0.245

E 6.35 6.73 0.250 0.265

e1 3.96 5.18 0.156 0.204

H 9.398 10.41 0.370 0.410

L 0.51 0.020

L1 0.64 1.02 0.025 0.040

L2 0.89 2.032 0.035 0.080

L2

D

L1

b

b2

E

C1

A

H

L

C

A1e1


APM3054N

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Package Information

SOT-223( Reference JEDEC Registration SOT-223)

B1

D

H E

K

e

e1

A

c

L

A1

a

B

b

Millimeters InchesDimMin. Max. Min. Max.

A 1.50 1.80 0.06 0.07A1 0.02 0.08B 0.60 0.80 0.02 0.03

B1 2.90 3.10 0.11 0.12c 0.28 0.32 0.01 0.01D 6.30 6.70 0.25 0.26E 3.30 3.70 0.13 0.15e 2.3 BSC 0.09 BSCe1 4.6 BSC 0.18 BSCH 6.70 7.30 0.26 0.29L 0.91 1.10 0.04 0.04K 1.50 2.00 0.06 0.08 0 10 0 10 13 13


APM3054N

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Reference JEDEC Standard J-STD-020A APRIL 1999

Reflow Condition (IR/Convection or VPR Reflow)

Physical Specifications

Pre-heat temperature

183 C

Peak temperature

Time

tem

pera

ture

Classification Reflow Profiles

Convection or IR/Convection

VPR

Average ramp-up rate(183C to Peak) 3C/second max. 10 C /second max.Preheat temperature 125 25C) 120 seconds maxTemperature maintained above 183C 60 150 secondsTime within 5C of actual peak temperature 10 20 seconds 60 secondsPeak temperature range 220 +5/-0C or 235 +5/-0C 215-219C or 235 +5/-0CRamp-down rate 6 C /second max. 10 C /second max.Time 25C to peak temperature 6 minutes max.

Package Reflow Conditions

pkg. thickness 2.5mmand all bgas

pkg. thickness < 2.5mm andpkg. volume 350 mm

pkg. thickness < 2.5mm and pkg.volume < 350mm

Convection 220 +5/-0 C Convection 235 +5/-0 CVPR 215-219 C VPR 235 +5/-0 CIR/Convection 220 +5/-0

C IR/Convection 235 +5/-0 C

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.


APM3054N

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R e liab ility test p rogram

Tes t item M eth o d D e s c rip tio nS O L D E R A B IL IT Y M IL -S T D -8 83 D -2 0 03 2 45 C , 5 S E CH O LT M IL -S T D -8 83 D -1 0 05 .7 1 00 0 H rs B ias @ 12 5 CP C T JE S D -22 -B , A 10 2 1 68 H rs , 1 0 0 % R H , 12 1 CT S T M IL -S T D -8 83 D -1 0 11 .9 -6 5 C ~ 1 5 0 C , 20 0 C yc lesE S D M IL -S T D -8 83 D -3 0 15 .7 V H B M > 2 K V, V M M > 20 0 VL atch-U p JE S D 78 1 0m s , I tr > 1 0 0m A

Carrier Tape

A

J

B

T2

T1

C

t

Ao

E

W

Po P

Ko

Bo

D1

D

F

P1


APM3054N

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Application A B C J T1 T2 W P E

178 1 70 2 13.5 0.15 3 0.15 14 2 1.3 0.3 12 + 0.312 - 0.1 8 0.1 1.75 0.1

F D D1 Po P1 Ao Bo Ko tSOT-89

5.5 0.05 1.5 0.1 1.5 0.1 4.0 0.1 2.0 0.1 4.8 0.1 4.5 0.1 1.80 0.1 0.30.013


330 3 100 2 13 0. 5 2 0.5 16.4 + 0.3 -0.2 2.5 0.516+ 0.3 - 0.1 8 0.1 1.75 0.1

F D D1 Po P1 Ao Bo Ko tTO-252

7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.30.05


3301 621.5 12.750.15 2 0.6 12.4 +0.2 2 0.2 12 0.3 8 0.1 1.75 0.1

F D D1 Po P1 Ao Bo Ko tSOT-223

5.5 0.05 1.5+ 0.1 1.5+ 0.1 4.0 0.1 2.0 0.05 6.9 0.1 7.5 0.1 2.1 0.1 0.30.05

Application Carrier Width Cover Tape Width Devices Per ReelSOT- 89 12 9.3 1000

SOT- 223 12 9.3 2500TO- 252 16 13.3 2500

Cover Tape Dimensions

Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,

Hsin-Chu, Taiwan, R.O.C.

Tel : 886-3-5642000

Fax : 886-3-5642050

Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.

Tel : 886-2-89191368

Fax : 886-2-89191369

This datasheet has been downloaded from:

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