assp voltage detector - tyro-teq.com file1 fujitsu semiconductor ds04-27300-2e data sheet — assp...

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1 DS04-27300-2E FUJITSU SEMICONDUCTOR DATA SHEET ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications, the Fujitsu MB3761 is a dual comparator with a built-in high precision reference voltage generator. Outputs are open-collector outputs and enable use of the OR-connection between both channels. Both channels have hysteresis control outputs. Because of a wide power supply voltage range and a low power supply current, the MB3761 is suitable for power supply monitors and battery backup systems. Wide power supply voltage range: 2.5 V to 40 V Low power and small voltage dependency supply current: 250 μA typical. Built-in stable low voltage generator: 1.20 V typical. Easy-to-add hysteresis characteristics. Package: 8-pin Plastic SIP Package (Suffix: -PS) 8-pin Plastic DIP Package (Suffix: -P) 8-pin Plastic FPT Package (Suffix: -PF) ABSOLUTE MAXIMUM RATINGS (See NOTE) Rating Symbol Value Unit Power Supply Voltage VCC 41 V Output Voltage VO 41 V Output Current IO 50 mA Input Voltage VIN -0.3 to +6.5 V Power Dissipation PD 350 (TA 70°C) mW Storage Temperature TSTG -55 to 125 °C NOTE: Permanent device damage may occur if ABSOLUTE MAXI- MUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PIN ASSIGNMENT V HYS-B OUT-B GND OUT-A IN-A HYS-A IN-B CC V HYS-B OUT-B GND OUT-A IN-A HYS-A IN-B CC 8 7 6 5 4 3 2 1 8 7 6 5 4 3 2 1 (FRONT VIEW) (TOP VIEW) B A (+) (—) + (+) (—) + + B + A (+) (—) (+) (—) PLASTIC PACKAGE SIP-08P-M03 PLASTIC PACKAGE DIP-08P-M01 PLASTIC PACKAGE FPT-08P-M01 This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.

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Page 1: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

DS04-27300-2EFUJITSU SEMICONDUCTORDATA SHEET

ASSP

VOLTAGE DETECTOR

MB3761

VOLTAGE DETECTOR

Designed for voltage detector applications, the Fujitsu MB3761 is a dual

comparator with a built-in high precision reference voltage generator.

Outputs are open-collector outputs and enable use of the OR-connection

between both channels. Both channels have hysteresis control outputs.

Because of a wide power supply voltage range and a low power supply

current, the MB3761 is suitable for power supply monitors and battery

backup systems.

• Wide power supply voltage range: 2.5 V to 40 V• Low power and small voltage dependency supply current: 250 µA

typical.• Built-in stable low voltage generator: 1.20 V typical.• Easy-to-add hysteresis characteristics.• Package: 8-pin Plastic SIP Package (Suffix: -PS)

8-pin Plastic DIP Package (Suffix: -P)8-pin Plastic FPT Package (Suffix: -PF)

ABSOLUTE MAXIMUM RATINGS (See NOTE)

Rating Symbol Value Unit

Power Supply Voltage VCC 41 V

Output Voltage VO 41 V

Output Current IO 50 mA

Input Voltage VIN -0.3 to +6.5 V

Power Dissipation PD350

(TA ≤ 70°C) mW

Storage Temperature TSTG -55 to 125 °C

NOTE: Permanent device damage may occur if ABSOLUTE MAXI-MUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

PIN ASSIGNMENT

V

HYS-B

OUT-B

GND

OUT-A

IN-A

HYS-A

IN-B

CC

V

HYS-B

OUT-B

GNDOUT-A

IN-A

HYS-A

IN-B CC

8

7

6

5

4

3

2

1

8

7

6

54

3

2

1

(FRONT VIEW)

(TOP VIEW)

B

A

(+)

(—)

+

(+)

(—)

+

+

—B

+

—A

(+)

(—)

(+)

(—)

PLASTIC PACKAGESIP-08P-M03

PLASTIC PACKAGEDIP-08P-M01

PLASTIC PACKAGEFPT-08P-M01

This device contains circuitry to protect the inputs against damage dueto high static voltages or electric fields. However, it is advised thatnormal precautions be taken to avoid application of any voltagehigher than maximum rated voltages to this high impedance circuit.

1

Page 2: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

2

MB3761

HYS-A

OUT-A

VCC

HYS-B

GND

IN-A IN-B OUT-B

2

4

3 1 6

8

7

5

Figure 1. MB3761 Equivalent Circuit

V1.2VREF

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Value Unit

Power Supply Voltage VCC 2.5 to 40 V

Operating Temperature TA -20 to 75 °COutput Current at pin 4 IO4 4.5 mA

Output Current at pin 6 IO6 3.0 mA

Page 3: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

MB3761

ELECTRICAL CHARACTERISTICS

TA=25°C, VCC=5V

Parameter Designator ConditionsValues

UnitMin Typ Max

Power Supply VoltageICCL VCC=40 V, VIL=1.0 V - 250 400 µA

ICCH VCC=40 V, VIH=1.5 V - 400 600 µA

Threshold Voltage VTH IO =2 mA, VO=1 V 1.15 1.20 1.25 V

Deviation of Threshold Volt-age

∆VTH1 2.5 V ≤ VCC ≤ 5.5 V - 3 12 mV

∆VTH2 4.5 V ≤ VCC ≤ 40 V - 10 40 mV

Offset Voltage between Out-puts

VOOSAIOA= 4.5 mA, VOA=2 VIHA= 20 mA, VHA=3 V - 2.0 - mV

VOSSBIOB=3 mA, VOB=2 VIHB=3 mA, VHB=2 V - 2.0 - mV

Temperature Coefficient of Threshold Voltage α -20°C ≤ TA ≤ 70°C - ±0.05 - mV/°C

Difference Voltage on Threshold Voltage between Channel

∆VTHAB -10 - -10 mV

Input CurrentIIL VIL=1.0 V - 5 nA

IIH VIH=1.5 V - 100 500 nA

Output Leakage Current IOH VO=40 V, VIL=1.0 V - - 1 µA

Hysteresis Output Leakage Current

IHLAVCC=40 V, VHA=0 V, VIL=1.0 V - - 0.1 µA

IHHB VHB=40 V, VIH=1.5 V - - 1 µA

Output Sink CurrentIOLA VO=1.0 V, VIH=1.5 V 6 12 - mA

IOLB VO=1.0 V, VIH=1.5 V 4 10 - mA

Hysteresis CurrentIHHA VH=0 V, VIH=1.5 V 40 80 - µA

IHLB VH=1.0 V,VIL =1.0 V 4 10 - mA

Output Saturation VoltageVOLA IO= 4.5 mA, VIH=1.5 V - 120 400 mV

VOLB IO= 3.0 mA, VIH=1.5 V - 120 400 mV

Hysteresis SaturationVHHA IH= 20 µA, VIH=1.5 V - 50 200 mV

VHLB IH= 3.0 mA, VIL=1.0 V - 120 400 mV

Output Delay TimetPHL RL=5 KΩ - 2 - µs

tPLH RL=5 KΩ - 3 - µs

3

Page 4: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

4

MB3761

Figure 2. Operational Definitions

1

2

3

4 5

6

7

8

R1

R2

R3

R4

R5

R6

RL R L

V IN

V HB

HYS-B

V OB

V OA

V CC

OUT-B

OUT-A

GND

V OA

VIN

V IN

V IN

V HB

VOB

V ILB V IHB

V ILA V IHA

VIHA =(1+R2

R1 )VR

VILA =(1+R2

R1 )VR// R 3 R3

R1 VCC-

V IHB =(1+R5

R4 )VR// R 6

V ILB =(1+R5

R4 )VR

V R ∼ VTH ( 1.20V)

R2 // R3=R2

R2

+ R 3

R3

R5 // R6=R5

R5

+ R 6

R6

∼NOTE)

Page 5: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

MB3761

TYPICAL PERFORMANCE CHARACTERISTICS

Output (B) Current IOLB (mA)

Power Supply Voltage VCC (V)Power Supply Voltage VCC (V)

Temperature TA (°C)Power Supply Voltage VCC (V)

Output (A) Current IOLA (mA)

IHHA ( µA)

-20°C

70°C

VCC=5V

VCC=5VVIH=1.5V

25°C

VCC=5VVIH=1.5V

1.0

0

Output

VOLA (V) 0.8

0.6

0.4

0.2

05 10 15 20

1.0

0.8

0.6

0.4

0.2

0

(A)Voltage

25

Output

VOLB (V)

(B)Voltage

1.22Threshold

VTH (V)1.21

1.20

1.19

1.18

1.17

Voltage

0 10 20 30 40

1.22Threshold

VTH (V)1.21

1.20

1.19

1.18

1.17

Voltage

-20 0 20 40 60 80

0 5 10 15 20 25

-20°C

Fig. 6 - Output (B) Voltagevs. Output (B) Current

Fig. 7 - Threshold Voltagevs. Power Supply Voltage

Fig. 8 - Threshold Voltagevs. Temperature

25°C 70°C

Fig. 5 - Output (A) Voltagevs. Output (A) Current

TA=25°C

500

0

PowerSupplyCurrent

400

300

200

100

010 20 30 40

150

0

HysteresisCurrent

120

90

60

30

010 20 30 40

Fig. 3 - Power Supply Currentvs Power Supply Voltage

Fig. 4 - Hysteresis (A) Currentvs Power Supply Voltage

70°C25°C

70°C

70°C

25°C

-20°C

-20°C-20°C

25°C VIH=1.5V

VIH = 1.5V

VIL=1.0V

(A)

ICC (µA)

5

Page 6: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

6

MB3761

APPLICATION EXAMPLES

VCC (VIN)

R

Figure 9. Addition of Hysteresis

1

2

3

4 5

6

7

8

R1

R2

R3

RL

VOA

VIH (VCC)

VIH

VIH

VHB

VILB VIHB

VILA VIHA

VIHA =(1+R3

)V

VOA

GND

1

2

3

4 5

6

7

8

R1

R2

R3

IN

VCC

VHB

VOB

GND

C1

L

R1 + R2VILA =(1+

R3)VR

R2

VOB

V ILB =(1+R1

)VRR2 + R3

VIHB = (1 +R2

)VR

R1All calculations occur with the output voltage at 0. The hysteresis values are adjusted for load condition and saturation voltage.

Note:

Page 7: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

MB3761

APPLICATION EXAMPLES (Continued)

1

2

3

4 5

6

7

8

R3

R1

R4

RL

VCC

VO

R2

VO

VCCL VCCH

VCCH = (1+R2

)VRR1

VCCLR4

)VRR3

VCC

= (1+

Figure 10. Voltage Detection for Alarm

GND

For hysteresis, a positive feedback from pin 2 or 7 is required.

VCCL ≥ 2.5 V

Figure 11. Voltage Detection for Alarm

1

2

3

4 5

6

7

8

R3

R1 R4

RL

VCC

VO

GND

R2

VO

VCCL VCCH

VCCH = (1 +R4

)VRR3

VCCL = (1 +R2

)VRR1

VCC

VCCL ≥ 2.5 V

7

Page 8: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

8

MB3761

APPLICATION EXAMPLES (Continued)

1

2

3

4 5

6

7

8

R1

VCC

R2

Figure 12. Programmable Zener

GND

R3

VZ

VZ (1+R3

)VRR2

VZ

R2 +R3

VCC

R1

- VZ 6mA

+

-

Channel B can be used independently.

≤≤

Figure 13. Recovery Reset Circuit

1

2

3

4 5

7

8

R1

R2

R3

C1

6

6.8 KΩ

15 KΩ

330 KΩ3.3 KΩ R4

0.1µF

VCC

OUT

= 5 V

GND

R5 6.8 KΩ

OUT

Page 9: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

MB3761

TYPICAL CHARACTERISTICS

Figure 14. DC Characteristics

6VO (V)

0 1 2 3 4 5 6

4

2

0

VCC (V)

VO (V)

5

0

0

Figure 15. Response Characteristics

4.4

VCCL VCCH

VCC

VO

tRST

30 ms

VCC (V)

• Voltage Threshold Levels (VCCL and VCCH) andHysteresis Width can be changed by the resistors(R1 through R4).

• Power-On Reset Time is provided by the followingapproximate equation:

• The recommended value of hFE of the externaltransistor is from 50 to 200.

• In the case of an instant power fail,the remaining charge in C1 effects tRST.

• If necessary, the reversed output is providedon HYS terminal

VCCL =R3

VTHR1 + R2 + R3

VCCH +R3

VTHR1 (R2 + R3

VCCL=)

R4

tRST = -C1 R4 • In 1 -VTH

VCC(1 +

R1

R2 + R3)

9

Page 10: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

1

MB3761

PACKAGE DIMENSIONS (Continued)

–0+.012

+.012–0

–.014+.006

+0.30–0

+0.15–0.35

–0+0.30

(.010±.002)0.25±0.05

3.26±0.25(.128±.010)

(.244±.010)6.20±0.25

(.323±.012)8.20±0.30

(.157±.012)4.00±0.30

(.020±.003)0.50±0.08

TYP2.54(.100)

.060

.039

.774

0.99

19.65

INDEX-2

INDEX-1

1.52

1994 FUJITSU LIMITED S08010S-3C-2C

8 pin, Plastic SIP (SIP-08P-M03)

Dimensions in mm (inches).

0

Page 11: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

MB3761

PACKAGE DIMENSIONS (Continued)

+0.30

–0+.012 +.012

–0

+.016–.012

–.012+.014

–0+0.30

–0

+0.40–0.30

–0.30+0.35

(.244±.010)6.20±0.251 PIN INDEX

15°MAX

TYP7.62(.300)

0.51(.020)MIN

(.010±.002)0.25±0.05

(.018±.003)0.46±0.08

TYP2.54(.100)

3.00(.118)MIN

4.36(.172)MAX

.039 .060

.370

.035

1.520.99

9.40

0.89

1994 FUJITSU LIMITED D08006S-2C-3C

8 pin, Plastic DIP (DIP-08P-M01)

Dimensions in mm (inches).

11

Page 12: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

12

MB3761

PACKAGE DIMENSIONS (Continued)

+0.40–0.20+.016–.008

+0.05–0.02+.002–.001

+0.25–0.20

+.010–.008

3.81(.150)REF

1.27(.050)TYP

INDEX6.80

.268

0.15

.006

6.35 .250

(.307±.016)(.209±.012)

(.018±.004)

(STAND OFF)

(.020±.008)0.50±0.20

5.30±0.30 7.80±0.40

0.05(.002)MIN

2.25(.089)MAX

0.45±0.10

Details of "A" part

0.50(.020)

0.20(.008)

0.18(.007)MAX

0.68(.027)MAX

"A"

MØ0.13(.005)

0.10(.004)

1994 FUJITSU LIMITED F08002S-4C-4C Dimensions in mm(inches).

8 pin, Plastic SOP (FPT-08P-M01)

Page 13: ASSP VOLTAGE DETECTOR - tyro-teq.com file1 FUJITSU SEMICONDUCTOR DS04-27300-2E DATA SHEET — ASSP VOLTAGE DETECTOR MB3761 VOLTAGE DETECTOR Designed for voltage detector applications,

24

FUJITSU LIMITED

For further information please contact:

Japan

FUJITSU LIMITEDCorporate Global Business Support DivisionElectronic DevicesKAWASAKI PLANT, 4-1-1, KamikodanakaNakahara-ku, Kawasaki-shiKanagawa 211-88, JapanTel: (044) 754-3763Fax: (044) 754-3329

North and South America

FUJITSU MICROELECTRONICS, INC.Semiconductor Division3545 North First StreetSan Jose, CA 95134-1804, U.S.A.Tel: (408) 922-9000Fax: (408) 432-9044/9045

Europe

FUJITSU MIKROELEKTRONIK GmbHAm Siebenstein 6-1063303 Dreieich-BuchschlagGermanyTel: (06103) 690-0Fax: (06103) 690-122

Asia Pacific

FUJITSU MICROELECTRONICS ASIA PTE. LIMITED#05-08, 151 Lorong ChuanNew Tech ParkSingapore 556741Tel: (65) 281-0770Fax: (65) 281-0220

F9703

FUJITSU LIMITED Printed in Japan

All Rights Reserved.

The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering.

The information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, FUJITSU is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams.

FUJITSU semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.).CAUTION: Customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with FUJITSU sales representatives before such use. The company will not be responsible for damages arising from such use without prior approval.

Any semiconductor devices have inherently a certain rate of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions.

If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Control Law of Japan, the prior authorization by Japanese government should be required for export of those products from Japan.