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1037
Author Index
Abernathy, C.R., 477, 855Adamski, Joseph A., 1007Aers, G.C., 931Agarwal, Anuradha M., 543Ahem, Brian S., 1007Ahrenkiel, Richard K., 781Akiyama, I., 139Alaya, S., 163, 747Allen, E.L., 685Altelarrea, H., 785Anderson, Robert A., 431, 455Anderson, W.A., 993Antonelli, A., 523Arora, B.M., 185, 203Arriga, 0., 139Asakura, H., 115Aucouturier, M., 401Awadelkarim, 0.0., 283, 377
Baba, T., 741Bachowski, Stephen, 1007Bajaj, K.K., 313Bakry, Assem M., 781Ballutaud, D., 401Banerjee, S., 185Bao, X.J., 1027Baraff, G.A., 805Baranowski, J.M., 821Barbier, D., 567Barczynska, J., 179Bardin, T.T., 979Barnes, P.A., 979Barry, J., 955Beckett, D.J.S., 221Bedair, S.M., 647Benson, B.W., 29 5Benyattou, Taha, 69Bergman, J.P., 325, 337Bernholc, J., 523Beye, A.C., 115, 121, 139Bliss, D.E., 815Bode, M., 639Booker, G.R., 907Borenstein, J.T., 633Borghesi, A., 919Borrego, J.M., 831Bosch, J., 785Bourgoin, J.C., 163, 747, 799Breitschwerdt, A., 39 5Brennan, T.M., 773Brower, K.L., 145Brown, A.R., 555Brown, G.J., 157, 809Brown, Robert A., 615Buda, F., 383
Budil, Matthias, 535
Cabaniss, G., 855Canut, B., 927Car, R., 383Carmo, M.C., 273Carter, C.B., 709Caruso, R., 489Chadi, D.J., 765Chakrabarti, U.K., 489Chandvankar, S.S., 203Charasse, Marie-Noelle, 69Charbonnier, M., 927Chaussemy, G., 927Chen, Samuel, 983Chen, W.M., 303, 377Cheng, A.Y., 1027Cheng, K.Y., 193Chevallier, J., 793Chiarotti, Guido L., 383Clarke, D.R., 425Clevenger, L.A., 961Cole, M.W., 987, 993Compaan, A., 759Corbett, J.W., 633Cotell, CM., 861Cowern, N.E.B., 605
Das, K., 1011Dautremont-Smith, W.C., 501Davies, G., 273De Mierry, P., 401De, Bhola N., 965Deal, Michael D., 653, 685,
691DeAvillez, R.R., 961Deicher, M., 245Deleo, G.G.f 367Dischler, B., 875Dornen, A., 21, 239Dow, John D., 349Droopad, R., 9 07Dube, C , 459Dudley, M., 1031Duesbery, M.S., 941Dunham, Scott T., 543Dupuis, R.D., 867Dutta, M., 987
Eichhammer, Wolfgang, 915Elcess, K., 197Emanuelsson, P., 307Ennen, H., 875Estle, T.L., 407
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
1038
Fahey, P., 529Fang, Zhaoqiang, 189Feng, S.L., 747Fischer, D.W., 827Florez, L.T., 709Fowler, W.B., 367Franciosi, A., 665Fujisaki, Yoshihisa, 1017Fujisawa, T., 741Fukuda, T., 969Fukushima, H., 1001
Gaiduk, P., 601Galtier, Pierre, 69Garone, P.M., 591Geddo, M., 919Gehlhoff, W., 307Gerrard, N.D., 867Ghandhi, S.K., 95, 831Gibson, J.M., 861Gislason, H.P., 127Glaser, E., 753Goldman, L.M., 627Goldys, E., 179Gosele, Ulrich M., 671, 715Gossard, A.C., 325, 331, 337Goto, Shigeo, 1017Griess, M., 945Griffin, James, 881Grimmeiss, H.G., 3, 51, 307Grossmann, G., 51Griinebaum, D.f 21Guido, L.J., 697Guillot, Gerard, 69Gurer, E., 29 5
Ha, N.T., 501, 867Haegel, N.M., 63Haller, E.E., 15, 133, 815Hallin, C , 337Hamm, R.A., 861Hanak, Thomas R., 781Hara, A., 969Harbison, J.P., 709Harrison, Joseph G., 89Hartiti, Bouchaib, 905Hashimoto, Fumio, 291Haugstad, G.f 665Heinrich, Michael, 535Henry, A., 283, 303Henry, M.O., 273, 299Herman, M.H., 197Herrero, C.P., 395Heyman, J., 15Hiesinger, P., 875Higgs, Victor, 57Hilton, Robert M., 1007Hirai, I., 969Hj almarson, Harold P., 361,
773
Hobson, W.S., 63, 489, 855Holonyak, Jr., Nick, 697Holtz, P.O., 325, 331, 337Honma, N., 951Hopkins, L.C., 861Hoshino, M., 901Hruska, Jane, 965
Ichimura, Masaya, 549Ishibashi, Tadao, 887Ishituka, K., 121Ito, Hiroshi, 887Itoh, Y., 1001Iyer, S.S., 343
Jackman, T.E., 931Jackson, Koblar, 89Jackson, S.L., 193Jacobson, D.C., 621Jager, W., 659James, R.B., 1027Janssen, K.T.F., 605Janzen, E., 169, 207, 303Jendrich, U., 579Jeng, Nanseng, 543Jeong, J., 151Jiao, K.L., 993Johnson, S.T., 975Joos, B., 941Jos, H.F.F., 605
Kahen, K.B., 677, 681Kalejs, J.P., 459Kamijoh, K., 139Kaminski, Pawel, 75Kamiura, Yoichi, 291Kao, Y.J., 63Katayama-Yoshida, H., 81Kato, T., 901Keilmann, F., 133Keller, R., 245Kennedy, T.A., 33, 753Kiefl, R.F., 407Kienle, R., 21, 239Kightley, P., 57Kim, Y., 639Kimerling, L.C., 151Kirita, H., 1001Kleverman, M., 3, 51, 169, 207Ko, Kei-Yu, 983Koch, U., 6 09Koidl, P., 875Kopf, R.F., 793Kozuch, D.M., 367, 477Krause, S., 955KringhcSj, P., 585K u k i m o t o , H . , 7 4 1Kumar, S . N . , 9 2 7K i i r n e r , W. , 2 3 9K u r t z , S . R . , 7 7 3
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
1039
Kutsuwada, N., 115, 139
Lambert, G., 109Lareau, R.T., 993Larsen, A. Nylandsted, 585,
601Larsen, K. Kyllesbech, 601Latushko, Ya.I., 277Laugier, A., 927Lawrence, D.J., 677Lee, J.W., 501Lee, K.M., 151Lee, S.-Tong, 9 83Legoues, F.K., 437Legros, R., 793Lehman, J.L., 987Lever, R.F., 561Lightowlers, E.C., 57, 273,
299Lindefelt, U., 287LindstrSm, J.L., 283, 377Linnarsson, M., 127, 169, 207Liu, H.-Y., 1031Liu, Joyce C , 437Lopata, J., 367, 477, 489,
501Luftman, H.S., 501, 867Lundgren, K.R., 221Luysberg, Martina, 659
Ma, E., 961Maaref, H., 163, 747Magno, R., 789Maier, M., 875Makita, Y., 115, 121, 139Manasreh, M.O., 175, 809, 827Maroudas, Dimitrios, 615Marrakchi, G,, 163Marwick, A.D., 437Mathiot, D., 401Matlock, J.H., 597Matsumori, T., 121, 139Matsumoto, T., 901Mayer, K.M., 115, 121, 139McCollum, M.J., 193McDermott, B.T., 647McGuigan, K.G., 273, 299Mehrer, H., 659Mei, P., 709Merk, E., 15Merz, J.L., 325, 331, 337Michel, D.J., 941Michel, J., 151Milnes, A.G., 189, 997Mitchel, W.C., 157Mitchell, I.V., 931Mizuta, M., 741, 753MShrle, Martin, 495Moller, H.J., 579, 945Molnar, B., 753
Moncorge, Richard, 69Monemar, B., 39, 85, 127, 169,
207, 257, 261, 265, 283,303, 325, 331, 337, 377
Monteiro, Teresa, 215Mooney, Patricia M., 729Morante, J.R., 785Morehead, F.F., 561Mori, M., 121Mostefaoui, R., 793Muller, Jean-Claude, 915Munakata, C , 951Murray, Jeffrey J., 691Murray, R., 555Myers, Leary, 881Myers, N.C., 609
Nakayama, Y., 121Narasimhan, K.L., 269Nazare, M.H., 299Newman, R.C., 555Nichols, C.S., 425Nissen, M.K., 221Nolte, D.D., 815Norman, A.G., 907Northrop, G.A., 27, 343Nygren, E., 627
Oda, T., 139Oehrlein, G.S., 377Ogasawara, M., 951Oguchi, T., 81Ohnishi, N., 115, 121Ohsawa, A., 969Olajos, J., 3Qmling, P., 307Ortale, C , 1027Ottolini, L., 919Ourmazd, A., 639Ozeki, M., 901
Pajot, Bernard, 465Palmstrom, C , 709Panish, M.B., 861Pantelides, Sokrates T., 511Park, B., 621, 627Park, In-Shik, 211Parker, S.D., 907Parrinello, M., 383Pearah, P.J., 175, 197Pearton, S.J., 367, 477, 489,
501, 855Pederson, Mark R., 89Pellegrino, Joseph, 881Pensl, G., 21Pereira, Estela, 215Perez, A., 785Perret, M., 659Peterkin, Jane, 965Petersen, J.W., 585
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
1040
Peterson, D.L., 677Petrov, V.V., 277Pfeiffer, W., 245Piaggi, A., 919Pinzone, C.J., 867Pivac, B., 919Piano, M.A., 193Plummer, J.D., 685Poate, J.M., 621Potzl, Hans W., 535Premchandran, V., 269Pronko, J.G., 979
Radzimski, Zbigniew, 449Raisanen, A., 665Rajbenbach, H., 837Rajendran, S., 459Rajeswaran, G., 677, 993Ralston, J.D., 875Ramdani, J., 647Ramsteiner, M., 875Ren, Shang Yuan, 349Reynolds, Donald C , 313Ridgway, M.C., 975Robinson, H.G., 653Ronay, Maria, 573Rossabi, J., 987Rozgonyi, George A., 449Rune, G.C., 331
Sadwick, Larry P., 1021Samitier, J., 785Sarkar, D., 269Sasaki, T., 81Sawyer, William D., 923Schad, R.G., 573Schlesinger, T.E., 189, 997,
1027Schlette, A., 239Schmalzlin, Jorg, 923Schmid, U., 609Schmitz, K.M., 993Schneider, J.W., 407Schultz, P.J., 931Schwab, C , 407Schwartz, P.V., 591Schwarz, S.A., 591, 709Seager, Carleton H., 431, 455Seghier, Djelloul, 69Seibt, M., 945Sengupta, D., 975Seong, Tae-Yeon, 907Shan, Lei, 189Sharma, D.K., 203, 269Sharma, R., 993Shelby, R., 789Shen, Jun, 349Shibata, H., 115, 121, 139Shimizu, A., 139Shimizu, H., 951
Shin, Ki-Chul, 211Siffert, Paul, 915Simpson, P.J., 931Skudlik, H., 245Smith, D.D., 987Smith, L.M., 95Sopori, Bhushan, 449Spaepen, F., 621, 627Spencer, Michael, 881Srivastava, A.K., 185, 203,
269Stavola, Michael, 367, 477Steiner, D., 245Stella, A., 919Stevenson, David A., 653, 691Stillman, G.E., 193, 483Stockman, S.A., 193Stolwijk, N.A., 21, 659Stolz, P., 21Stradling, R.A., 907Streit, Dwight C., 1021Stringfellow, G.B., 893Sturm, J.C., 591Stutzmann, M., 395Suezawa, Masashi, 233Sugiyama, H., 139Sugiyama, Y., 121Sumino, Koji, 233Sundaram, M., 325, 331, 337Sveinbjornsson, E.O., 127Svensson, B.G., 261Svensson, J.H., 261, 265Swaminathan, V., 489Szafranek, I., 193, 483
Tacano, M., 121Takahashi, T., 121Takai, M., 1001Takechi, M., 901Takeda, Akihiro, 549Takeda, Michihiko, 549Takeyama, T., 937Tan, T.Y., 715, 983Tan, Teh Y., 671Tanoue, H., 139Theiler, T., 133Theis, Thomas N., 729Theodore, N.D., 709Thewalt, M.L.W., 221, 303Thilderkvist, A., 51Thompson, C.V., 961Thonke, K., 21, 239Timmons, Michael L., 7 81Tin, C.C., 979Trautman, P., 821Trombetta, J.M., 33Tsai, Min-Hsiung, 349Tu, C.W., 793Tu, K.N., 961Tucker, J.H., 555
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
1041
Tulchinski, D.f 633
Ueda, 0., 901Uekusa, S.f 139Urban, K., 659
Valley, G.C., 837Van de Walle, Chris G., 419Van Vechten, J.A., 609Venkatasubramanian, R., 95,
831Visitserngtrakul, S., 955von Bardeleben, H.J., 163,
747, 799, 837
Wachters, A.J.H., 605Wada, Takao, 549Wagner, A.V., 627Wall, A., 665Walukiewicz, W., 815, 845Wang, P.D., 907Ward, I.D., 197Watkins, G.D., 367Weber, Jorg, 443, 923Weman, H., 257Wichert, Th., 245Wijaranakula, W., 597Williams, R.L., 907Wittmer, M., 529Wolford, D.J., 27, 95, 343Wong, D., 997Woollam, John A., 965Wu, D.T., 627Wu, J., 1031
Xiao, Zhigang, 449Xu, Hongqi, 287
Yamada, A., 115, 121, 139Yao, G.-D., 1031Yao, H.D., 759Yoneta, Minoru, 291Yoshino, J., 741Yu, Shaofeng, 671, 715Yuzun, Gao, 937
Zaidi, M.A., 163Zazoui, M., 747Zemanski, J.M., 975Zemon, S., 109Zhang, S.B., 765Zhao, Q.X., 337Zhao, Yong, 965Zheng, Longru, 9 83, 993Zhou, Tian-Qun, 449Zhu, J., 567Zundel, T., 443
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
1043
Subject Index
absorbance, infrared, 367absorptionhigh-resolution, 15infrared, 277, 465, 477,
556, 809, 827, 919intersubband, 875intracenter, 821model, Langmuir-Rideal, 831optical, 21, 179, 265, 805,
827vibrational, 477
acceptor(s), 483double, 21, 169-like defect, shallow, 193shallow, 331zinc, 15
activationanalysis, 1001energies, 511
thermal, 7 81AES, 697, 993Al, 277AlGaAs, 109, 729, 747, 765,
773, 781, 793, 799, 881,893, 1021
AlGalnP, 893alloy clustering, 907amorphous layer, 975amphoteric
defect model, 845impurity, 115
annealing, 175, 233, 489,523, 997classical thermal, 915furnace, 585-induced activation, 139pulsed-laser, 759
anti-bonding site, 465-phase boundary, 901
antisite, 39, 151arsenic, 821, 827
ashing, 965atomic
layer epitaxy (ALE), 647order, 893ordering, 9 07
Augerdepth profile, 437effect, 69recombination, 265
B-acceptor pair, 443band-to-band, 95bandgap narrowing, 759
Be-doping, 653, 881
ultra-high, 861-implanted, 151
beam-coupling gain, 837bicrystals, 579
Ge, 945binding energy, 437bond-centered location, 465boron, 269, 367bound
excitons, 21, 221, 295, 303,313, 325, 331, 343
multi-exciton complex, 221Bragg-Laue geometry, grazing,
1031bulk moduli, 425buried layer, 543
antimony, 597marker, 529
capacitively measured, 951capture
cross section, 781, 793hot-electron, 729rates, 729
carbon, 197, 291, 887-group V pairing, 295incorporation, 831
carrieractivation, 983compensation, 881lifetime, minority, 95, 189,
951scattering, 845
Cdi_xMnxTe, 665CdTe, 665charged particle activation
analysis (CPAA), 1001chemical etching, 1027chemo-mechanical polishing,
245chloride-VPE, 901cluster formation, 605clustering
effects, 383model, dynamic, 605
compensation, 133complex
defect, 139, 269, 303formation, 633
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
1044
complexes, 39S-related, 303substitutional, 39vacancy-
impurity, 39phosphorus, 287
compositionally gradedregion, 489
compound semiconductors, 845compression, 425concerted exchange, 511, 523conductance, source drain,
789conf iguration
coordinate diagram, 163,295, 729
local atomic, 741constant-force-of-
interaction, 615contact(s)
metals, 1027ohmic, 993
contaminants, 197internal, 915
Cr, 567-B pairs, 239interstitial, 239
critical temperature, 893cross-bridge Kelvin (CBK),
993crystal-field splitting, 21Cu(-), 197, 273
diffused, 169doped, 221, 295pairing, 239precipitation, 579
CuBr, 407CuCl, 407Cu3Si, 573CVmeasurement, 1021profiling, 855, 927
etch, 685
damage characterization, 9 87dangling bonds, 1017decay time, 32 5deep levels, 27, 75, 157,
185, 277, 343, 729defect (s), 85, 927, 997, 1027
[113}, 955axial isoelectronic, 295characterization, 1031dopant-related, 709Ei, 915E2, 915E3, 915Ec, 915electron irradiation, 937extended, 257
Ge-related, 179hydrogen-induced, 449intrinsic, 845levels, 979native, 845noble-gas, 923process-induced, 915reactions, 845rod-like, 291Sn-vacancy, 261
delta-doped, 855lattice parameter (DLP)model, 893
depletion layer width, 951deuterium diffusion profile,
401diamagnetic shift, 313diamond, 89differential
scanning calorimetry (DSC),961
transient spectroscopy(DITS), 785
diffusion, 601, 639, 653, 677,855Al-Ga inter-, 697anomalous, 605, 681
dopant, 9 83vacancy, 597
arsenic, 535asymmetric, 529atomic, 609Au, 609, 627B, 605Be, 715coupled defect-impurity, 561dopan t impur i ty, 511enhanced, 5290, 555
hydrogen, 395, 401, 633impurity, 523inter-, 621, 639, 715low-temperature, 529Mn, 665nonequilibrium condition,
535one-sided, 609self, 511, 523, 573, 715Si, 671, 677, 691, 715Si-Si pair, 671Sn, 685substitutional interstitial,
653transient, 605volume, 549Zn, 659, 681, 715
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
1045
diffusioncoefficient, 383, 511, 535,
621, 627, 697, 715lengths, hole, 997model, 401modeling, 535profiles, calculated, 401
diffusivity, 567Ga-vacancy, 677interstitial, 543tensor, 615
direct-gap semiconductor, 95dislocated, 459dislocation(s), 57, 941, 1007
edge, 1031loops, 659partial, 941secondary, 945
disorderingdopant-induced, 715superlattices, 715
dissociation energy, 465DLTS, 163, 277, 291, 567,
729, 741, 781, 785, 789,815, 915, 979, 997
donor(s)generation, oxygen, 597neutral, 313new, 291OH, 133shallow, 33, 133, 753substitutional, 729
dopant atomsGroup-V, 277substitutional, 529
doping, 881, 887electron-beam, 549heavy, 759n-type, 867p-type, 867,881
DX center, 729, 741, 747,753, 759, 765, 773, 781,785, 789, 793, 799
EBIC, 459EDX, 901effective-mass
hole, 21state, 747, 799
EL2, 211, 799, 805, 809, 815,821, 827, 831, 837, 979formation, 831-like defect, 175
EL3, 211, 979EL6, 163, 979electrical
neutralization, 465properties, 121
electronbeam electroreflectance
(EBER), 197gas, 2-dimensional, 337irradiation, 261, 265, 277,
367microscopy, analytical, 659
electronicstructure, 81transitions, 261
emissionbarrier, electron, 741rates, 729
EPR, 233, 307, 407, 419, 799Er-doped, 69exchange broadening, 33excited states, 15, 21excitons, 95, 109, 115, 273
Fermienergy, 845-level
effect, 671, 697stabilization energy, 845
resonance, 367Fick's second law, 653first-principles calculations,
419, 425, 511fourier transform
photoluminescencespectroscopy (FTPLS), 221
Frank-Condon shift, 261freeexcitons, 325, 361
heavy-hole, 313-to-bound, 313
FTIR, 169, 207, 221, 919
GaAs, 95, 109, 115, 121, 127,163, 169, 175, 189, 193,207, 221, 349, 407, 465,477, 483, 549, 653, 659,671, 677, 681, 685, 691,715, 759, 765, 799, 809,815, 821, 827, 837, 845,855, 867, 881, 975, 979,983, 987, 993, 997, 1001,1011, 1021heavilyBe-doped, 121Ge-doped, 115
LEC, 197semi-insulating, 75, 157,
189undoped, 211
GaAs/AlGaAs, 313, 325, 331,337
GaAs/Ge, 647GaAs/InP, 489GaAsSb, 893
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
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GaAs/Si, 1031GalnP, 893GaP, 145, 179, 215, 407
S-doped, 145GaPSb, 893gas bubbles, 449Ge, 133, 407
amorphous, 621ultra-pure, 133
gettering, 915, 951, 969gradient, electric field, 245grain boundary, 211, 579, 945Green's function, 511
H2molecules, 401pairing, 401
H-band luminescence, 337Hall measurement, 203, 881,
1021HCX, 997heat of solution, 425HEMTS, 789heterojunctions, 337
GaAs/Ge, 647heterostructures, 1011
GaAs/AlGaAs, 753modulation-doped, 845Si/Ge, 523Si/SiGe, 343
high-dose, 931resolution spectroscopy, 3
hole-hole coupling, 21homostructures, 95hot carriers, 85HREM, 955Huang-Rhys factor, 261HVEM, 937hydrogen, 245, 383, 401, 419,
425, 437, 443, 459, 511-acceptor pairs, 245, 483-B pairs, 395, 401bond, 465charge state, 425complexes, 465diffusion, 455, 465-donor complexes, 477-impurity complexes, 465isolated, 407-0 interaction, 555pairs, 443passivation, 245, 367, 431,
459, 477, 489plasma, 555
neutralization, 465-related complexes, 377segregation, 437-shallow-acceptor, 443-Sn complex, 477
hydrogenated, 483hydrogenation, 431, 449, 455,
465DX center, 793ion-beam, 455plasma, 489, 501
hydrogenic states, 729hyperfine parameters, 419
immiscibility, 893implantation, 139, 621
hydrogen, 915iron, 919MeV, 979oxygen, 975, 979Sb, 931Si, 983Sn, 585, 685
impurities, 197, 927, 1027metal, 915
impurity-induced layerdisorder (IILD), 697
In11 1, 245InAsSb, 893, 907In-Cu pairs, 245indiffusion, Mn, 665in-doped, isoelectronic, 189infrared
far, 133, 221mid, 221
InGaAs, 495, 861, 887InGaAs/InP, 203InGaAsP, 893InGaAsSb, 893InGaP, 901InP, 33, 139, 185, 465, 501,
861, 867, 1007semi-insulating, 75
InPSb, 893interaction potential, 615interface(s), 437, 951
(115), 955Al/Si, 437GaAs/AlGaAs, 337, 639roughness, 3 61traps, 951
interfacial luminescence, 489interstitial(s), 561, 639
Al, 277Be, 881donor, 881iron, 51mechanism, 523mediated, 511self, 609, 715Zn, 681
ion-beam etching, 923implantation, 601, 653transit, 431
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
1047
ionization energy, 747iron, 51. 185, 919-B pairs, 2 33indium pairs, 307
isothermal transientspectroscopy (ITS) 785
isotopeeffect, 465shift, 367
Jahn-Teller, 169junction
impedance, 951leakage current, 951p-n, 951
Kaufman plasma, 449kick-out
mechanism, 549, 659, 715model, 609
kinetic model, 633Kyropoulos growth, 1007
laser applications, 993lattice
image, 437relaxation, 81, 729, 799,
805large, 747, 773
lifetime, 95measurement, 215
light-emitting-diode, blue,81
limited-reaction processing,591
lithium, 81, 127local density
approximation (LDA), 89functional formalism, 81
LPE, 901, 907
magnetic field, axial, 1007MBE, 69, 115, 121, 193, 875,
887, 893, 907, 927, 1021gas-source, 861hydride-source, 861-regrown, 987
membrane structure, 543mercuric iodide (Hgl2), 1027metal contamination, 57metastability, 295, 407, 799,
815metastable, 827
properties, 265Mg, 653migration energy, 937miscibility gaps, 893, 907mixing, 709
luminescence, 215Mn, 185, 197, 207, 215
mobilities, 881, 887, 907,1007free-carrier, 845
mobility-lifetime product, 837MOCVD, 63, 867, 901, 907modulated structure, 901molecular dynamics, 941
simulations, ab initio, 383moment analysis, 615monohydride groups, 383Monte-Carlo simulation, 609
dynamic, 615MGss$auer spectroscopy, 579,
585MQW, GaAs/AlGaAs, 875multilayers, 961
artificial, 621, 627muon, 407
spinresonance, 419rotation, 407
muonium, 419centers, 4 07
Murali and Murarka theory, 965
neutralization, 443(NH4)2S, 1017nitridation, 535nitrogen, 89nondestructive inspection, 951nonradiative, 69nuclear
detectors, 1027resonant reaction, 437
ODMR, 33, 39, 81, 145, 151,303, 377, 753donor-acceptor pair, 33
OMMBE, 855OMVPE, 831, 855, 893optical ionization, 15ordered
alloy, 741structures, 893, 901
orderingCuPt-type, 901, 907short-range, 893
oscillator strength, giant,361
oscillatory structure, 63oxidation, 543
dry, 9 65mechanism of, 965
oxides, ultra thin, 965oxygen, 151, 919, 969, 975,
979, 1001atomic, 965
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
1048
paircorrelation function, 383recombination, 3 3
pairingCr-B, 567defect-impurity, 561reaction, 567SiQa-vGa< 677
Pankove model, 367passivation, 633
acceptor, 483, 501dopant, 455nonradiative center, 489Zn-acceptor, 495
pattern recognition, vector,639
Pd/Au:Be, 993Pd2Si, 529PECVD, 501penetration depth,
kinematical, 631perturbed angular
correlation, 239phase
separation, 907-volume grating, 827
phonon density of states, 383phosphorus, 89, 221, 269photo-
capture, 773induced
changes, 809transient spectroscopy
(PITS), 75thermal ionization
spectroscopy (PTIS), 3,133
photoconductivity, 133, 179,239, 809persistent, 773spectral, 157
photocurrent, 951, 997photoelectron spectroscopy,x-ray, 931
photoemission, 665photoionization, 773
cross section, 793photoluminescence, 27, 33,
57, 69, 109, 115, 121, 127,139, 157, 163, 169, 185,193, 203, 207, 215, 221,239, 257, 269, 273, 277,295, 303, 313, 325, 331,337, 343, 361, 377, 483,489, 549, 697, 747, 759,907, 923, 1017, 1021, 1027D-band, 57decay, 3250.8 eV band, 163
excitation, 63, 69, 139,221
magneto-, 221resonant, 313temperature-dependent, 313time-resolved, 95
photon beam, chopped, 951photoquenching, 809, 827photorefractive effect, 837photovoltage
AC, 951surface, 951
planardefects, (111), 449-doped structures, 1021
plastically deformed, 57platelets, 257point(-)defect(s), 3
charged, 691gradient model, 671native, 639nonequilibrium, 715
polaron measurement, 881polycrystalline, 579Poole-Frenfel, 747, 785positron, 927
annihilation, 927slow, 927
potential well, strain-induced, 257
preannealing, low-temperature, 291
precipitates, 257, 659, 861,915, 969oxygen, 597
pressurehydrostatic, 27, 523, 741,
747, 799, 805, 815uniaxial, 805
pseudo-donor model, 265pseudopotential method
ab initio self-consistent,765
norm-conserving, 81
quantum(-)welKs), 313, 325,331, 349, 875heterostructures (QWH), 697
quasi-steady-state, 561quenching, 969
radiationdamage, 343-induced, 277
radiative efficiency, 95radioactive acceptor, 245Raman scattering, 875, 9 87
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
1049
rapid thermalannealing (RTA), 585, 601,
681, 931, 1021processing (RTP), 591, 915
reaction kinetics, first-order, 233
recombinationnonradiative, 145radiative, 295
recovery, 827reflectance spectroscopy,
infrared, 39 5regrowth kinetics, 975regular solution model, 893ReSi2, 573RHEED, 1017RIE, 495, 987rocking curve, 1031Rutherford backscattering
(RBS), 585, 601, 923, 931,961, 975
Rydberg series, 51
S-diffused, 303scanning photon microscope
(SPM), 951Schottky barrier, 1021segregates, 861segregation coefficient, 1001selectively doped, 741SEM, 697SEM/EBIC, 449semi-magnetic semiconductor,
665Si
compensation, 875-dopant behavior, 875
SiGe alloys, 591silicidation, 961silicides, 573metal, 579transition-metal, 529
silicon, 15, 27, 51, 57, 221,233, 239, 261, 269, 277,287, 291, 303, 307, 367,377, 383, 395, 401, 407,419, 425, 431, 437, 449,455, 459, 511, 523, 535,543, 549, 561, 567, 573,579, 585, 591, 597, 601,605, 609, 633, 915, 923,927, 931, 937, 941, 965,969amorphous, 621, 627, 961-on-insulator, 955, 1011-on-sapphire, 1011
SIMOX, 955
SIMS, 401, 437, 501, 529,591, 605, 633, 647, 653,685, 691, 697, 855, 861,867, 919, 927, 983
Si/SiGe, 343Sn, 261, 867snow-plow effect, 529solar cells, 997solid solubility, 585spectrophotometry, infraredmultiple internalreflection, 449
spin-density functional, 419Hamiltonian, 377
spinodal decomposition, 901spreading resistancemeasurement (SRM), 659
Stillinger-Weber potential,941
Stokes shift, 765strain, 523binding, 273energy, 893heteroepitaxial, 75 3hydrostatic, 273
stress, 465, 789uniaxial, 273, 815, 821
substitutionality, 585subsurface layers, thin, 1031sulfur-coated, 1017superlattices, 343GaAs/AlGaAs, 709monolayer, 901
supersaturation, 715interstitial, 535oxygen, 591vacancy, 535
surfacealloys, non-equilibrium, 665-ambient interaction, 697electric field, 449potential, 951protection, 501reaction, 665recombination velocity, 95structure, 1017
synchrotron white beam, 1031
TED, 9 07TEM, 579, 585, 659, 697, 709,
861, 893, 901, 907, 937,945, 961, 975, 979, 983,987, 993
tension, 425ternary alloy, 785
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information
1050
thermal(-)donor, 291, 597formation, 555
neutron(s), 179irradiation, 175
treatment, 919thermally stimulated current
(TSC), 189thermodynamic equilibrium
reaction, 831tight(-)binding, 349
theory, 287tilt grain boundary, 945titanium, 961topographic imaging, 1031total
energies, 81-energy
calculations, 89, 425surfaces, 511
transformation, 809transient
capacitance, 7 89current, 789
transition-metal films, 573state, 729
transmission, 3, 51line model (TLM), 993topographs, 1031
transmittance, 477transmuted Ge, 179transport equation, 615transverse electric fields,
337trapping, 109traps, 189positively charged, 951
TRR, 975twinning, 955two-beam experiment, 69
undersaturation, 715
vacancies, 561, 609, 639,845, 937, 969Ga, 677
vacancymechanism, 523-mediated, 511
valence force field (VFF)model, 893
Van der Pauw, 121vanadium, 63variable angle of incidence
spectroscopic ellipsometry(VASE), 965
variational calculation, 361virtual crystal approximation
(VCA), 893
void formation, 9 83
XPS, 1017x-ray(s), 1031
diffraction, 621, 627rocking, 1021
Zeeman, 133measurements, 273, 295spectroscopy, 51, 207
zero-field splitting, 307phonon line, 805, 821
zinc, 21, 33, 867substitutional, 681
ZnSe, 81, 349
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Cambridge University Press978-1-558-99051-7 - Materials Research Society Symposium Proceedings Volume 163: Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures: Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.Editors: Donald J. Wolford, Jerzy Bernholc and Eugene E. HallerIndexMore information