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Basic Electronics Engineering

Semester I & II First Year Engineering Common to All Branches As per the new revised syllabus of SSPU. w.e.f. academic year 2012-2013

Prof. S. R. Deshpande

Ph.D. (Pursuing), M.E., B.E.(Ind. Elect.)

Head Engineering Science & FE

Sinhgad Institute of Technology & Science, Narhe, Pune

Gigatech Publishing House

Igniting Minds

Basic Electronics Engineering

First Year Engineering Common to All Branches

As per new revised syllabus of SPPU w.e.f. academic year 2012-2013

Prof. S. R. Deshpande

First Edition : July 2017

Published By –

Gigatech Publishing House

631/32, Budhawar Peth,

Office No. 105, First Floor, Shan Bramha Complex, Pune – 411 002.

Phone No. 952 952 0952

Copyright Gigatech Publishing House

All rights reserved. No part of this publication can be stored in any retrieval system or

reproduced in and form or by any means without prior permission of the Publisher.

LIMITS OF LIABILITY AND DISCLAIMER OF WARRANTY

The Authors and Publisher of this book have tried their best to ensure that the

program, procedure and function described in the book are correct . However the

author and publisher make no warranty with regard to the program and documentation

contained in the book.

ISBN NO. : 978-81-9341-400-2

Price : < 295/-

Available at All Leading Book Stalls

Distributor :

PRADEEP BOOK DISTRIBUTORS

102/3, 1ST Floor, Shan Bramha Complex,

Pune. Telephone No. 020 – 24458333,

942 208 7031 / 844 699 5959

E-mail : [email protected]

Note: For any queries, doubts, suggestions & complaints regarding the subject, please feel

free to contact on the below e-mail or phone number. We will be more than thankful for your

feedback.

Ph: 952 952 0952 E-mail : [email protected]

PREFACE TO THE FIRST EDITION

I am very glad to offer the book of 'Basic Electronics Engineering' for the

students of first year degree courses in Engineering of Savitribai Phule Pune

University.

The University has revised Syllabi of FE in 2015. The university has

introduced Online examination system

As per the new structure, two online examinations will be conducted at the

end of first month and second month in the first semester. First online

examination will be based on first and second units and second examination

will cover third and fourth units. Both the online examinations will have

objective type of questions with multiple choices, End semester examination

will be based on all the six units and that will be conducted in a traditional way.

This text book is written, taking into account new syllabus and all the new

aspects that have been introduced in it. New students to the engineering field

will definitely find this book, complete in all respects. Students will find the

subject matter presentation quite attracttive. Addition of multiple choice

questions will be very useful to students for practice of online examinations.

I take this opportunity to express my regards to Dr. A. V. Deshpande

(Director, Sinhgad Institutes), Dr. S. N, Mali (Principal, SITS, Narhe) and Dr. P. M,

Patil (Professor, JSPM, Hadapsar, Pune) for continuous encouragement to write

this book. I also thank Prof. Mukesh Patil (SITS, Narhe) for his valuable help in

creating this text book.

I also express my sincere thanks to Gigatech Publishing House (GPH) for

publishing this book in time.

I have no doubt that student's community will respond positively to the

new book.

The advice and recommendations of our respected readers to improve the

contents will be highly valued.

July 2017 Author

PUNE

Gigatech Publishing House

Igniting Minds

SYLLABUS

Unit 1 : Diode Circuits (6 Hours)

Half wave rectifiers, Full wave rectifiers, Power supply filters and Capacitor filters, Diode

limiting (Clippers) and Clamping circuits, Voltage multipliers, Zener diode and its applications,

LEDs and Photodiodes.

Unit 2 : Bipolar Junction Transistor (BJT) Circuits (6 Hours)

BJT Structure and its operation with normal biasing, Transistor characteristics and parameters,

DC operating point, Transistor as an amplifier, Transistor as a switch, Enhancement-type

MOSFET.

Unit 3 : Linear Integrated Circuits (6 Hours)

Introduction to operational amplifiers, Op-amp input modes and parameters, Negative

feedback. Op-amp with negative feedback, Comparators, Summing amplifiers, Integrators

and Differentiators. IC 555 timer as an oscillator, Voltage regulation, IC voltage regulators

(Three pin).

Unit 4 : Digital Electronics (6 Hours)

Introduction, Digital signals, Basic digital circuits-AND, OR, NOT, NAND, NOR, EX-OR,

Standard nd representation for logic functions, Half adder, Boolean algebra, Examples of IC

gates, Full adder, Multiplexers, De-multiplexer, Flip-flops, 1-bit memory cell, D flip-flop, Shift

registers, Counters, Block diagram of Microprocessor and Microcontroller and their

applications.

Unit 5 : Industrial Electronics (7 Hours)

Power Devices : Basics of 4-layer devices : Silicon Controlled Rectifier (SCR), Diac and Triac.

Transducers : Introduction, Electrical transducer, Selecting a transducer, Resistive transducer,

Thermistor, Inductive transducer, Linear Variable Differential Transducer (LVDT), Load cell,

Phototransistor, Temperature transducers, Flow measurement (Mechanical transducers)

Application of transducers : Digital Thermometer, Weighing machine (Block diagrams).

Unit 6 : Electronic Communication (7 Hours)

Importance of Communication System, The elements of a Communication System,

Bandwidth requirement, IEEE frequency spectrum, Transmission media: Wired (Twisted pair,

Coaxial and Optical fiber Cables) and Wireless, Need for modulation, Analog modulation

schemes AM and FM, Mobile communication system: Cellular concept, Simple block diagram

of GSM system.

F.E. (BASIC ELECTRONICS ENGINEERING) 2 Contents

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CONTENTS

1. DIODE CIRCUITS 1.1 – 1.78

1.1 Diode Fundamentals

1.1.1 Classification of Materials

1.1.2 The Energy Band Theory

1.1.3 Classification of Materials Based on Energy Gap (EG)

1.1.4 Effect of Temperature on Conduction of Semiconductors (Intrinsic)

1.2 P-N Junction and Its Characteristics

1.2.1 P-N Junction Diode

1.2.2 Biasing of a Diode

1.2.3 Forward V-I Characteristic of P-N Junction Diode

1.2.4 Forward Resistance of Diode

1.2.5 P-N Junction Diode in Reverse Biased Mode

1.2.6 Breakdown in a Reverse Biased Diode

1.3 Reverse Characteristics of Diode

1.3.1 Reverse Resistance of Diode

1.4 V-I Characteristics of the Typical Silicon and Germanium Diodes

1.4.1 Diode Current Equation

1.4.2 Effect of Temperature on V-I Characteristics

1.5 Types of Diode Rectifier

1.5.1 The Half-Wave Rectifier

1.5.2 Detail Analysis of Half-Wave Rectifier

1.5.2.1 DC or Average Load Current (IL dc)

1.5.2.2 DC or Average Load Voltage (VL dc)

1.5.2.3 AC or RMS Value of the Load Current (IL rms)

1.5.2.4 AC or RMS Value of Load Voltage (VL rms)

1.5.2.5 Ripple Factor (r)

1.5.2.6 Voltage Regulation

1.5.2.7 DC Output Power (PL dc)

1.5.2.8 AC Input Power (Pac)

1.5.2.9 Rectification Efficiency

1.5.2.10 (TUF) Transformer Utilization Factor

1.5.2.11 PIV (Peak Inverse Voltage)

1.6 The Full-Wave Rectifier

1.6.1 Detail Analysis of Full-Wave (center-tapped) Rectifier

1.6.1.1 Average Load Current (IL dc)

1.6.1.2 Average Load Voltage (VL dc)

1.6.1.3 RMS Load Current (IL rms)

1.6.1.4 RMS Load Voltage (VL rms)

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1.6.1.5 Ripple Factor (r)

1.6.1.6 DC Output Power (PL dc)

1.6.1.7 AC Input Power (Pac)

1.6.1.8 Rectifier Efficiency

1.6.1.9 Transformer Utilization Factor (TUF)

1.6.1.10 PIV (Peak Inverse Voltage)

1.6.1.11 Voltage Regulation

1.7 The Full-Wave Bridge Rectifier

1.7.1 Detail Analysis of Bridge Rectifier

1.8 Comparison of Three Rectifier Circuits

(HWR, FWR, and Bridge Rectifier)

1.9 Types of Rectifier Filters

1.9.1 Half-Wave Rectifier With Capacitor Filter

1.9.2 Full-Wave Rectifier with Capacitor Filter

1.9.3 Bridge Rectifier with Capacitor Filter

1.9.4 Surge Currents in Capacitor Filter

1.10 Clipping Clamping Circuit

1.10.1 Clipper Circuits

1.10.2 Positive Clipper

1.10.3 Negative Clipper

1.10.4 Biased Clipper

1.10.4.1 Positive Clipper using VBIAS

1.10.4.2 Negative Clipper using VBIAS

1.10.4.3 Diode Clipper Implemented with the Help of Voltage

Divider Bias

1.10.5 Diode Clampers

1.10.5.1 Positive Clamper

1.10.5.2 Negative Clamper

1.11 Voltage Multipliers

1.12 Zener Diode

1.12.1 V-I Characteristic of the Zener Diode

1.12.2 Equivalent Circuit of a Zener Diode

1.12.3 Breakdown Mechanism of Zener Diode

1.12.4 Zener Diode Vs Avalanche Diode

1.12.5 Zener Shunt Voltage Regulator

1.12.6 The Regulating action in Zener Shunt Regulator with Varying Input

Voltage (RL Constant)

1.12.7 Regulating Action with Varying Load (Keeping Vin Constant)

1.12.8 The Limitations of Zener Regulator

1.13 Comparison of Rectifier and Regulator

1.14 LED (Light Emitting Diodes) Device Structure

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1.14.1 Construction of LED

1.14.2 Colours and Materials

1.14.3 The Characteristic of LED

1.15 Photodiode

1.15.1 Characteristics of Photodiode

Descriptive Questions

Multiple Choice Questions (MCQs)

2. TRANSISTORS CIRCUITS 2.1 – 2.44

2.1 Introduction

2.2 Features of Bipolar Junction Transistor (BJT)

2.3 Construction of Bipolar Junction Transistor (BJT)

2.3.1 Transistor Analogy by Two Diodes

2.3.2 An Unbiased Transistor

2.3.3 Biasing of a Transistor

2.4 Working of N-P-N Transistor in Active Region

2.5 Working of P-N-P Transistor in Active Region

2.6 Conventional Current Directions in the N-P-N and P-N-P Transistors

2.7 Configurations Of BJT

2.8 Common Base Configuration

2.8.1 Input Characteristics of Common Base Configuration

2.8.2 Output Characteristics in CB Configuration

2.9 Common Emitter Configuration

2.9.1 Input Characteristics of Common Emitter Configuration

2.9.2 Output Characteristics in CE Configuration

2.10 Relationship Between dc and dc

2.11 Common Collector Configuration

2.11.1 Input Characteristics of C-C Configuration

2.11.2 Output Characteristics of C-C Configuration

2.12 Comparison of CB, CE and CC Configurations

2.13 Why CE Configuration is Widely Preferred?

2.14 Transistor Biasing and DC Analysis

2.14.1 The D.C. Operating Point and D.C. Load Line

2.15 Selection of Operating Point

2.16 Important Conditions for Biasing

2.17 Bias Stabilization

2.17.1 Fixed Bias

2.17.2 Self Bias or Voltage Divider Bias

2.18 Transistor as an Amplifier

2.18.1 Single stage BJT Amplifier

2.19 BJT as a Switch

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2.20 FET (Field Effect Transistor)

2.20.1 Classification of FET

2.21 MOSFET

2.22 Enhancement MOSFET (EMOSFET)

2.22.1 Construction of EMOSFET

2.22.2 Characteristics of N-channel EMOSFET

2.23 P-Channel EMOSFET

2.24 MOSFET as a Switch

Descriptive Questions

Multiple Choice Questions (MCQs)

3. LINEAR INTEGRATED CIRCUITS 3.1 – 3.50

3.1 Introduction

3.2 Op-Amp Symbol

3.3 Op-Amp IC 741

3.3.1 Power Supply Connections

3.4 Block Diagram of a Typical Op-Amp

3.5 OP-Amp Input Modes

3.6 The Ideal OP-Amp

3.6.1 Practical Op-Amp

3.7 Equivalent Circuit of an Op-Amp

3.8 Voltage Transfer Curves of an Op-Amp

3.9 Parameters of Practical Op-Amp

3.10 Open-Loop Configuration of an Op-Amp

3.11 Concept of Feedback

3.11.1 Negative and Positive Feedback

3.11.2 Closed Loop Configuration of Op-Amp

3.12 Inverting Amplifier

3.12.1 Virtual Ground

3.12.2 Analysis of Inverting Amplifier Circuit

3.13 Non-Inverting Amplifier

3.14 Voltage Follower (Unity Gain Buffer)

3.15 Comparator

3.15.1 Zero Level Detection

3.15.2 Non-zero Level Detection

3.15.3 Regenerative Comparator (Schmitt Trigger)

3.15.4 Output Bounding

3.16 Summing Amplifier

3.16.1 Inverting Summing Amplifier

3.16.2 Non-Inverting Summing Amplifier

3.16.3 Inverting Averaging Amplifier

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3.17 Difference Amplifier

3.18 Differentiator

3.18.1 Practical Differentiator

3.19 Integrator

3.19.1 Practical Integrator

3.20 IC 555 Timer

3.20.1 Astable Multivibrator

3.20.2 Voltage Controlled Oscillator

3.21 Voltage Regulation

3.21.1 Line Regulation

3.21.2 Load Regulation

3.21.3 IC Voltage Regulator

Descriptive Questions

Multiple Choice Questions (MCQs)

4. DIGITAL ELECTRONICS 4.1 – 4.41

4.1 Introduction

4.2 Concept of Positive And Negative Logic

4.3 Basic Digital Circuits

4.4 Boolean Algebra

4.4.1 De-Morgan’s Theorems

4.4.1.1 De-Morgan’s First Theorem

4.4.1.2 De-Morgan’s Second Theorem

4.5 Universal Gates

4.5.1 NAND as a Universal Gate

4.5.2 NOR as a Universal Gate

4.6 Standard Representation of Logic Function

4.6.1 Minterm and Maxterm

4.7 Adders

4.7.1 Half- adder

4.7.2 Full-Adder

4.7.2.1 Full-Adder Circuit

4.7.3 Full-Adder Circuit using Half-Adder

4.8 Multiplexer [MUX]

4.8.1 2 : 1 Multiplexer

4.8.2 4 : 1 Multiplexer

4.8.3 8 : 1 Multiplexer

4.9 Demultiplexer [Demux]

4.9.1 1 : 8 Demultiplexer

4.10 Flip-Flop

4.10.1 T Flip-Flop

F.E. (BASIC ELECTRONICS ENGINEERING) 7 Contents

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4.11 Registers

4.12 Shift Register

4.12.1 Serial-In, Serial-Out (SISO) Shift Register

4.12.2 Serial-In, Parallel-Out (SIPO) Shift Register

4.12.3 Parallel-In, Serial-Out (PISO) Shift Register

4.12.4 Parallel-In, Parallel-Out (PIPO) Shift Register

4.13 Counters

4.13.1 Asynchronous Counters/Ripple Counters

4.13.2 Synchronous Counters

4.13.3 Difference Between Synchronous and Asynchronous Counters

4.14 Microprocessor

4.15 Microcontroller

4.16 Comparison between Microprocessor and Microcontroller

Descriptive Questions

Multiple Choice Questions (MCQs)

5. INDUSTRIAL ELECTRONICS 5.1 – 5.44

5.1 SCR (Silicon Controlled Rectifier or Thyristor)

5.1.1 Operation of SCR

5.1.2 Characteristics of SCR

5.1.3 Forward Characteristics

5.1.4 Reverse Characteristics

5.1.5 Two Transistor Analogy

5.1.6 Specifications of SCR

5.2 DIAC

5.3 TRIAC

5.3.1 Triggering Modes of TRIAC

5.4 Introduction

5.5 Measurement System (Instrumentation System)

5.6 Transducer

5.7 Classification of Transducers

5.7.1 Passive or Active Transducers

5.7.2 Comparison between Passive and Active Transducers

5.7.3 Primary or Secondary Transducers

5.7.4 Analog or Digital Transducers

5.8 Selection Criteria for Transducer

5.9 Resistive transducer

5.9.1 Potentiometer

5.9.2 Strain Gauge

5.9.3 Bonded Strain Gauge

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5.9.4 Unbonded Strain Gauge

5.10 Temperature Measurement

5.10.1 Resistance Temperature Detector (RTD)

5.10.2 Construction of RTD

5.10.3 Measurement using RTD

5.10.4 Thermistor

5.10.5 Temperature Measurement using Thermistor

5.10.6 Thermocouple

5.10.7 Types of Materials used for Thermocouples

5.10.8 Laws of Thermoelectric Circuit

5.10.9 Comparison of Temperature Transducers

5.11 Inductive Transducer

5.11.1 Inductive Transducer Based on Change Number of Turns

5.11.2 Transducer based on Change in Self Inductance with

Change in Permeability

5.11.3 Variable Reluctance Type Transducer

5.12 Linear Variable Differential Transformer (LVDT) (Inductive Type)

5.13 Load Cell (Pressure Cell)

5.14 Phototransistor

5.15 Flow Measurement

5.16 Digital Thermometer

5.17 Electronic Weighing Machine

Descriptive Questions

6. ELECTRONIC COMMUNICATION 6.1 – 6.50

6.1 Introduction

6.1.1 Block Diagram of Communication System

6.2 Classification of Communication System

6.2.1 Analog Communication

6.2.2 Digital Communication

6.3 Baseband Transmission Systems

6.4 IEEE Frequency Spectrum / Electromagnetic Spectrum

6.4.1 Radio Frequency Spectrum and its Applications

6.5 Modulation Techniques

6.5.1 Necessity of Modulation (Need for Modulation)

6.5.2 Types of Modulation

6.6 Amplitude Modulation

6.6.1 Mathematical Representation of AM Wave

6.6.2 Modulation Index (M)

6.6.3 Concept of Over Modulation

6.6.4 Trapezoidal Display Method to Calculate Modulation Index

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6.6.5 Frequency Spectrum of the AM Wave

6.6.6 Average Power for Sinusoidal AM

6.7 Frequency Modulation

6.7.1 Modulation Index in FM

6.7.2 Number of Sidebands

6.7.3 Deviation Ratio

6.7.4 Percentage Modulation of FM

6.7.5 Mathematical Representation of FM

6.7.6 Comparison of AM and FM

6.8 Communication Channel or Medium

6.8.1 Transmission Lines

6.8.2 Parallel Wires Transmission Line

6.8.2.1 Two-Wire Line Type

6.8.1.2 Two-Wire Ribbon Type

6.8.3 Twisted Pair Cables

6.8.4 Coaxial Cable

6.8.5 Fibre Optic Cable

6.8.6 Comparison of Wired Media

6.9 Wireless Media

6.10 Mobile Communication

6.11 Global System of Mobile Communication

Descriptive Questions

SAMPLE QUESTION BANK S.1 – S.3

MCQ’S 1 – 87

SOLVED UNIVERSITY EXAMINATION QUESTION PAPERS (MAY-2017) Q.1 – Q.22

SOLVED UNIVERSITY EXAMINATION QUESTION PAPERS (DEC-2015) Q.1 – Q.25

UNIVERSITY EXAMINATION QUESTION PAPERS Q.1 – Q.12

(DEC. 2012, DEC. 2013, DEC. 2014, DEC. 2016

JUNE 2013, JUNE 2014)

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1.1 Diode Fundamentals

1.1.1 Classification of Materials

Materials can be classified in many ways. Here we shall consider the property of

conduction of electricity for classification of materials. Some materials like copper,

aluminium, silver etc. are good conductors of electricity, whereas materials such as

plastic, rubber, wood etc. are bad conductors of electricity. They are called insulators.

Also, there are some materials, like Silicon and Germanium, whose conductivity lies

between conductors and insulators. Such materials are called semiconductors.

These materials have 4 electrons in the outermost shell of their atomic structure.

These four electrons are called valance electrons. They form a bond with another

valence electron of the neighbouring atom. These bonds are called covalent bonds.

The energy levels associated with the valance electrons merge into each other. This

merging forms a valance band.

1.1.2 The Energy Band Theory

Energy band diagrams for conductors, insulators and semiconductors are as shown

below in Fig. 1.1.

: Syllabus :

Half wave rectifiers, Full wave rectifiers, Power supply filters and Capacitor filters,

Diode limiting (Clippers) and Clamping circuits, Voltage multipliers, Zener diode and its

applications, LEDs and Photodiodes.

Unit

1 Diode Circuits

F.E. (BASIC ELECTRONICS ENGINEERING) 1.2 DIODE CIRCUITS

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(a) Conductor (b) Insulator (c) Semiconductor

Fig. 1.1

The energy band formed due to merging of energy levels associated with the free

electrons is called as the conduction band.

When the valance electron gets energy, it jumps from the valance band to the

conduction band and becomes free. While jumping it has to cross the energy gap

(EG).

The energy gap is the gap separating the valance band and the conduction band and

is called the forbidden gap.

1.1.3 Classification of Materials Based on Energy Gap (EG)

Conductors: As shown in Fig.1.1, in conductors like copper, aluminium etc. the

valance band and the conduction band overlap and there are large number of

electrons available for conduction at room temperature.

Insulators: As shown in Fig. 1.1, in insulators like plastic, wood etc. there is a large

forbidden gap (approx. 6 eV) between the valance band and conduction band and so

these materials cannot conduct the electricity.

Semiconductors: As shown in Fig. 1.1, in semiconductors the forbidden gap is much

smaller (approx. 1 eV) than insulators. At absolute zero temperature, these materials

behave as perfect insulators. But at room temperature, the value of EG is 0.72 eV for

Germanium and 1.12 eV for Silicon. As the temperature increases, these materials

can conduct heavily.

Basic Electronics EngineeringSemester I And II (Common for all

branches)

Publisher : Gigatech PublishingHouse

ISBN : 9788193414002 Author : S R Deshpande

Type the URL : http://www.kopykitab.com/product/11935

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