bat54gw - nexperia · 1 eccdcmnk 82a2 =;≤42 ,ss mnatb3 mc3cmhci nexperia bat54gw 30 v, 200 ma...
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BAT54GW30 V, 200 mA Schottky barrier diodes24 November 2016 Product data sheet
1. General descriptionPlanar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in anSOD123 small Surface-Mounted Device (SMD) plastic package.
2. Features and benefits• Low forward voltage: VF ≤ 400 mV• Low leakage current: IR ≤ 2 µA• Reverse voltage VR ≤ 30 V• Low capacitance• Small SMD plastic package• AEC-Q101 qualified
3. Applications• Ultra high-speed switching• Line termination
4. Quick reference data
Table 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit
IF forward current Tj = 25 °C - - 200 mA
VF forward voltage IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
- - 400 mV
IR reverse current VR = 25 V; pulsed; Tj = 25 °C [1] - - 2 µA
VR reverse voltage Tj = 25 °C - - 30 V
[1] Very short test pulse to prevent junction self-heating.
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT54GW30 V, 200 mA Schottky barrier diodes
BAT54GW All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2016 2 / 12
5. Pinning information
Table 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol
1 K cathode[1]
2 A anode21
SOD123 sym001
1 2
[1] The marking bar indicates the cathode.
6. Ordering information
Table 3. Ordering informationPackageType number
Name Description Version
BAT54GW SOD123 Plastic surface-mounted package; 2 leads SOD123
7. Marking
Table 4. Marking codesType number Marking code
BAT54GW G9
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT54GW30 V, 200 mA Schottky barrier diodes
BAT54GW All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2016 3 / 12
8. Limiting values
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit
VR reverse voltage - 30 V
IF forward current
Tj = 25 °C
- 200 mA
IFRM repetitive peak forwardcurrent
tp ≤ 1 s; δ ≤ 0.5 - 300 mA
IFSM non-repetitive peakforward current
tp < 10 ms; Tj(init) = 25 °C; square wave - 600 mA
[1] - 357 mWPtot total power dissipation Tamb ≤ 25 °C[2] - 600 mW
Tj junction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
9. Thermal characteristics
Table 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit
[1] - - 350 K/WRth(j-a) thermal resistancefrom junction toambient
in free air[2] - - 210 K/W
Rth(j-sp) thermal resistancefrom junction to solderpoint
[3] - - 58 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.[3] Soldering point of cathode tab.
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT54GW30 V, 200 mA Schottky barrier diodes
BAT54GW All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2016 4 / 12
aaa-025046
10-5 1010-210-4 10210-1tp (s)
10-3 1031
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.01
0.33
0.75
0.05
0.02
0.20
0.50
0.10
0.25
0
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical valuesaaa-025047
10-5 1010-210-4 10210-1tp (s)
10-3 1031
102
10
103
Zth(j-a)(K/W)
1
duty cycle = 1
0.010.02
0.05
0.20
0.10
0.250.33
0.500.75
0
FR4 PCB, mounting pad for cathode 1 cm2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT54GW30 V, 200 mA Schottky barrier diodes
BAT54GW All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2016 5 / 12
10. Characteristics
Table 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit
V(BR)R reverse breakdownvoltage
IR = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
30 - - V
IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
- - 240 mV
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
- - 320 mV
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
- - 400 mV
IF = 30 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
- - 500 mV
VF forward voltage
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02 ;Tj = 25 °C
- - 800 mV
IR reverse current VR = 25 V; pulsed; Tj = 25 °C [1] - - 2 µA
Cd diode capacitance VR = 1 V; f = 1 MHz; Tj = 25 °C - - 10 pF
[1] Very short test pulse to prevent junction self-heating.
103
102
10- 1
IF(mA)
VF (V)
10
1
1.20.80.40
msa892
(3)(2)(1)
(3)(2)(1)
(1) Tamb = 125 °C(2) Tamb = 85 °C(3) Tamb = 25 °C
Fig. 3. Forward current as a function of forwardvoltage; typical values
0 10 20 30VR (V)
103
102
10- 1
IR(µA)
10
1
(1)
(2)
(3)
msa893
(1) Tamb = 125 °C(2) Tamb = 85 °C(3) Tamb = 25 °C
Fig. 4. Reverse current as a function of reversevoltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT54GW30 V, 200 mA Schottky barrier diodes
BAT54GW All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2016 6 / 12
0 10 20 300
5
10
15
VR (V)
Cd(pF)
msa891
f = 1 MHz; Tamb = 25 °C
Fig. 5. Diode capacitance as a function of reverse voltage; typical values
11. Test information
t1t2
P
t006aaa812
duty cycle δ =
t1
t2
Fig. 6. Duty cycle definition
Quality informationThis product has been qualified in accordance with the Automotive Electronics Council (AEC)standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use inautomotive applications.
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT54GW30 V, 200 mA Schottky barrier diodes
BAT54GW All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2016 7 / 12
12. Package outline
16-10-13Dimensions in mm
21
3.753.45
2.802.55
1.71.5
1.31.0
Fig. 7. Package outline SOD123
13. Soldering
SOD123
sod123_fr
occupied area
solder paste
solder resist
Cu pad
Dimensions in mm16-05-1016-08-31
0.81
0.91 2.36
1.11
0.81
4.18
0.91
1.11
3.27
4.58
3.1
1.421.12 1.222.1 1.62
Fig. 8. Reflow soldering footprint for SOD123
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT54GW30 V, 200 mA Schottky barrier diodes
BAT54GW All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2016 8 / 12
SOD123
sod123_fw
occupied area
glue dot
solder resist
solder land
Dimensions in mm16-09-0216-09-06
1.2
0.331.2
2.5 2
2.65
7.5
4.5
2.55 2.43.5
Fig. 9. Wave soldering footprint for SOD123
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT54GW30 V, 200 mA Schottky barrier diodes
BAT54GW All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2016 9 / 12
14. Revision history
Table 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes
BAT54GW v.1 20161124 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT54GW30 V, 200 mA Schottky barrier diodes
BAT54GW All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2016 10 / 12
15. Legal information
Data sheet status
Documentstatus [1] [2]
Productstatus [3]
Definition
Objective[short] datasheet
Development This document contains data fromthe objective specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before initiating orcompleting a design.
[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.
DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.
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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.
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© Nexperia B.V. 2017. All rights reserved
Nexperia BAT54GW30 V, 200 mA Schottky barrier diodes
BAT54GW All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2016 11 / 12
TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.
© Nexperia B.V. 2017. All rights reserved
Nexperia BAT54GW30 V, 200 mA Schottky barrier diodes
BAT54GW All information provided in this document is subject to legal disclaimers.
Product data sheet 24 November 2016 12 / 12
16. Contents
1. General description......................................................12. Features and benefits.................................................. 13. Applications.................................................................. 14. Quick reference data....................................................15. Pinning information......................................................26. Ordering information....................................................27. Marking..........................................................................28. Limiting values............................................................. 39. Thermal characteristics............................................... 310. Characteristics............................................................511. Test information......................................................... 612. Package outline.......................................................... 713. Soldering..................................................................... 714. Revision history..........................................................915. Legal information..................................................... 10
© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 24 November 2016