bc846

BC846...BC850

1 Nov-20-2002

NPN Silicon AF Transistors

For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856, BC857, BC858 BC859, BC860 (PNP)

1

2

3

VPS05161

Type Marking Pin Configuration PackageBC846A BC846B BC847A BC847B BC847C BC848A BC848B BC848C BC849B BC849C BC850B BC850C

1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs

1 = B B = 1 B = 1 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B

2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E

3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C

SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23

BC846...BC850

2 Nov-20-2002

Maximum RatingsParameter Symbol BC846 BC847

BC850BC848BC849

Unit

Collector-emitter voltage VCEO 65 45 30 VCollector-base voltage VCBO 80 50 30Collector-emitter voltage VCES 80 50 30Emitter-base voltage VEBO 6 6 5DC collector current IC 100 mAPeak collector current ICM 200 mAPeak base current IBM 200Peak emitter current 200IEM

Total power dissipation, TS = 71 °C Ptot 330 mWJunction temperature Tj 150 °CStorage temperature Tstg -65 ... 150

Thermal ResistanceJunction - soldering point1) RthJS 240 K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified.Parameter Symbol Values Unit

min. typ. max.DC CharacteristicsCollector-emitter breakdown voltage IC = 10 mA, IB = 0

BC846BC847/850BC848/849

V(BR)CEO 654530

---

---

V

Collector-base breakdown voltage IC = 10 µA, IE = 0

BC846BC847/850BC848/849

V(BR)CBO 805030

---

---

1For calculation of RthJA please refer to Application Note Thermal Resistance

BC846...BC850

3 Nov-20-2002


min. typ. max.DC CharacteristicsCollector-emitter breakdown voltage IC = 10 µA, VBE = 0

BC846BC847/850BC848/849

V(BR)CES 805030

---

---

V

Emitter-base breakdown voltage IE = 1 µA, IC = 0

BC846/847BC848-850

V(BR)EBO 65

--

--

Collector cutoff current VCB = 40 V, IE = 0

ICBO - - 15 nA

Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C

ICBO - - 5 µA

DC current gain 1) IC = 10 µA, VCE = 5 V

hFE-group AhFE-group BhFE-group C

hFE ---

140250480

---

-

DC current gain 1) IC = 2 mA, VCE = 5 V

hFE-group AhFE-group BhFE-group C

hFE 110200420

180290520

220450800

Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA

VCEsat --

90200

250600

mV

Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA

VBEsat --

700900

--

Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V

VBE(ON) 580

-

660

-

700770

1) Pulse test: t ≤=300µs, D = 2%

BC846...BC850

4 Nov-20-2002


min. typ. max.AC CharacteristicsTransition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz

fT - 250 - MHz

Collector-base capacitance VCB = 10 V, f = 1 MHz

Ccb - 3 - pF

Emitter-base capacitance VEB = 0.5 V, f = 1 MHz

Ceb - 8 -

Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz

hFE-gr.AhFE-gr.BhFE-gr.C

h11e ---

2.74.58.7

---

k

Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz


h12e ---

1.523

---

10-4

Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz


h21e ---

200330600

---

-

Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz


h22e ---

183060

---

S

Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz

BC849BC850

F - 1.2 4 dB

Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz

BC850

Vn - - 0.135 µV

BC846...BC850

5 Nov-20-2002

Collector-base capacitance CCB = f (VCBO)Emitter-base capacitance CEB = f (VEBO)

0

4

10 5 10 10

EHP00361

VCB0

CEB0

V

6

2

EB0V

EBC8

10

pF12

CB0C

-1 0 1

CCB

(

(

)

BC 846...850

)

Total power dissipation Ptot = f(TS)

0 15 30 45 60 75 90 105 120 °C 150

TS

0

30

60

90

120

150

180

210

240

270

300

mW360

Pto

t

Permissible pulse loadPtotmax / PtotDC = f (tp)

10

EHP00362

-6

010

5

D =

5

101

102

310

10-5 10-4 10-3 10-2 100s

00.0050.010.020.050.10.20.5

t p

=DT

t p

T

totmax

totP DC

P

pt

Transition frequency fT = f (IC)VCE = 5V

10 10 10 10

EHP00363

f

mA

MHz

-1 0 1 25

T

310

102

110

5

5

5Ι C

BC846...BC850

6 Nov-20-2002

Collector cutoff current ICBO = f (TA)VCB = 30V

100 50 100 150

EHP00415

TA

10

nA

10

Ι CB0

10

10

4

3

2

1

0

max

typ

5

5

5

˚C

Collector-emitter saturation voltageIC = f (VCEsat), hFE = 20

100

EHP00367

VCEsat

10

mA

10

Ι C

10

2

1

0

-1

5

5

V0.3 0.5

10025-50

0.1 0.2 0.4

CCC

DC current gain hFE = f (IC)VCE = 5V

10 10 10 10

EHP00365

h

mA-2 -1 1 2

FE

310

102

010

5

5

101

010

5

5 5 5

100

25

-50

Ι C

C

C

C

Base-emitter saturation voltageIC = f (VBEsat), hFE = 20

010

EHP00364

BEsatV

0.6 V 1.2-1

100

101

210

5

5

Ι C mA

0.2 0.4 0.8

C25C100 C

-50 C

BC846...BC850

7 Nov-20-2002

h parameter he = f (VCE) normalizedIC = 2mA

00 10 20 30

EHP00369

VCE

h e

V

1.0

0.5

1.5

2.0

= 2 mAh

h

h

h

e

e

e

e

21

11

12

22

CΙ

h parameter he = f (IC) normalizedVCE = 5V

10 10 10

EHP00368

mA-1 0 1

5

eh

210

-110

110

10 0

5

5

5

h11e

h12e

h 21e

h 22e

VCE = 5 V

Ι C

Noise figure F = f (VCE)IC = 0.2mA, RS = 2k, f = 1kHz

010 10 10 10

BC 846...850 EHP00370

VCE

F

V

10

5

15

dB

20

-1 0 1 25

Noise figure F = f (f)IC = 0.2mA, VCE = 5V, RS = 2k

10 10 10 10

BC 846...850 EHP00371

F

kHz

dB

-2 -1 1 2

20

10

0

5

15

f

010

BC846...BC850

8 Nov-20-2002

Noise figure F = f (IC)VCE = 5V, f = 1kHz

10 10 10 10

BC 846...850 EHP00373

F

mA-3 -2 0 1

20

10

0

5

15

-110

= 1 M 100 k 10 k

dB

500

1 k

Ω Ω ΩSR

Ω

Ω

CΙ

Noise figure F = f (IC)VCE = 5V, f = 120Hz

10 10 10 10

BC 846...850 EHP00372

F

mA-3 -2 0 1

20

10

0

5

15

-110

= 1 M 100 k 10 k

dB

500

1 k

Ω Ω ΩSR

Ω

Ω

CΙ

Noise figure F = f (IC)VCE = 5V, f = 10kHz

10 10 10 10

BC 846...850 EHP00374

F

mA-3 -2 0 1

20

10

0

5

15

-110

= 1 M

100 k

10 k

dB

500

1 k

Ω

Ω

Ω

SR

Ω

Ω

CΙ

bc846

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