bcd technology and cost comparison 2021

©2021 by System Plus Consulting | SPR21594 - BCD Technology and Cost Comparison 2021 | Sample 1

22 Bd Benoni Goullin44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected] www.systemplus.fr

BCD Technology and Cost Comparison 2021

SP21594 – Semiconductor Manufacturing report by Sylvain HALLEREAULaboratory analysis by Tom HERVE

September 2021 – Sample

In-depth comparative study of 40 BCD technologies from the major 17 manufacturers (Infineon, STMicroelectronics, NXP, Renesas, etc.)

REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT


Versions of the Report

Version Date Updates

2017 V2 06/10/2017 o BCD Technology and Cost Comparison 2017




Table of ContentsOverview / Introduction 5

o Executive Summary

Technologies Evolution 11

o Transistors

✓ Summary

✓ Gate Oxides

✓ LDMOS and VDMOS

o Isolation

✓ Summary

✓ LOCOS and STI

✓ Deep Trench Isolation

✓ Substrate SOI

✓ Galvanic Isolation

o Metal Layer Process

✓ Summary

✓ Aluminum and Tungsten Plug

✓ Copper Metal Layer

✓ Thick Metal Layer

o Passives

✓ Summary

✓ Capacitor in Polysilicon

✓ Resistor in Polysilicon

✓ Metal Insulator Metal Capacitor

✓ Thin Film Resistors

✓ Inductors

o Shrink

o High Voltage

Foundry Technologies 44

o Infineon

✓ Roadmap

✓ SPT9 Process

✓ BCD 90nm

✓ SMART6 Process

✓ Infineon’s Thin-Film SOI-Technology

o STMicroelectronics: BCD6s, SOI-BCD6s, BCD6s-offline, BCD8, SOI-BCD8, BCD9,

VIPower M0-3, VIPower M0-5, VIPower M0-7

o Elmos: BCD 0.8µm

o Bosch: BCD6, BCD8

o Melexis-X-Fab: BCD 0.35µm

o NXP: A-BCD3, A-BCD9, SMARTMOS8, SMARTMOS10

o Littelfuse: BCDMOS on SOI High Voltage

o Texas Instruments: LBC5, LBC5-SOI, LBC8, LBC9

o Analog Devices: BCD 0.5µm, BCD 0.18µm, BCD 0.7µm

o Tower Semiconductor: BCD 0.4µm, SOI-BCD 0.18µm, BCD 0.18µm

o Denso: SOI-BCD 0.8µm, SOI-BCD 0.5µm

o Renesas: BCD 0.15µm

o Toyota: SOI-BCD 0.5µm

o Toshiba: SOI High Voltage

o Mitsubishi: BCD 3µm

o Rohm: BCD 0.5µm

o TSMC: BCD 0.35µm

o Synthesis Comparison

Feedback

Company Services 464In black, the new technologies add in the 2021 report.


Overview / Introductiono Executive Summaryo Glossaryo Reverse Costing

Methodology

Evolution of BCD Technologies

Foundry Technologies Review

Comparison

Related Analyses

About System Plus Consulting

Executive Summary

• This report presents an in-depth analysis of the latest innovations in Bipolar-CMOS-DMOS devices. It shows the differencesbetween 40 selected devices from Infineon, STMicroelectronics, Elmos, Bosch, NXP, Littlefuse, Texas Instruments, Analog Devices,Tower Semiconductor, Denso, Renesas, Toyota, Toshiba, Mitsubishi, Rohm, and TSMC. The report covers all the major players in themarket and their new technologies.

• In this 2021 version, you will find:

• More details on galvanic isolation.

• Four new manufacturers: Xfab, Mitsubishi, Rohm, TSMC.

• Nine new technologies, 90nm, high voltage.

• An update of the wafer cost calculation for the 31 technologies linked to the effects of COVID-19 and the worldwide materialshortage.

BCD (Bipolar-CMOS-DMOS) has been developed to simplify the control of power devices by proposing a monolithic IC solution tointegrate the gate driving circuit and current/temperature measurements to protect the power component in the same silicon IC.

The 2021 version adds nine new technologies from seven manufacturers and four new manufacturers: X-Fab, Mitsubishi, Rohm, andTSMC, who have adopted very different solutions analyzed in this report. Additionally, 13 SOI technologies are studied in this report,with technology nodes ranging from 3µm - 90nm. The components range from monolithic piloted power transistors tomicrocontrollers with high-voltage analog inputs and outputs.

For each analyzed device, this report details the manufacturing process and materials used, the component design, and the technicalchoices. The cost report provides an estimation of the cost structure of the wafers using the various technologies, highlighting theinfluence of the technological innovations.

This report also offers a unique opportunity to understand the technology evolutions and the manufacturing cost of the major BCDmanufacturers, and furnishes the basics for an optimal choice of components during design and integration.

In this report, System Plus Consulting analyzes and compares products from the 17 main manufacturers, with a focus on technologyevolution and a description of the cost impact of these innovations. Technical and cost comparisons of the main parameters,transistors, metal layers, isolation, and passives are all performed.



Methodology



Comparison

Related Analyses


Technologies Summary by Manufacturer

Infineon: SMART6

SPT9

BCD 90nm

Infineon’s SOI-technology

STMicroelectronics: BCD6s

SOI-BCD6s

BCD6s offline

BCD8

SOI-BCD8s

BCD9

VIPower M0-3

VIPower M0-5

VIPower M0-7

Elmos: BCD 0.8µm

Bosch: BCD6

BCD8

Melexis: BCD 0.35µm

NXP: A-BCD3 SOI

A-BCD9 SOI

SMARTMOS8

SMARTMOS10W

Littlfuse: SOI High Voltage

Texas Instruments: LBC5

LBC5-SOI

LBC8

LBC9

Analog Devices: BCD 0.5µm

BCD 0.18µm

BCD 0.7µm

Tower Semiconductor: BCD 0.4µm

SOI-BCD 0.18µm

BCD 0.18µm

Denso: SOI-BCD 0.8µm,

SOI-BCD 0.5µm

Renesas: BCD 0.15µm

Toyota: SOI-BCD 0.5µm

Toshiba: SOI High Voltage

Mitsubishi: BCD 3µm

Rohm: BCD 0.5µm

TSMC : BCD 0.35µm

New analyses published respect to the report « SPR20485 - BCD technology and Cost review 2020 » published



Methodology



Comparison

Related Analyses


Technologies Summary – 2021 News

New technology in the review 2021:

o Infineon: BCD 90nm

o STMicroelectronics: BCD6s-offline (0.35µm)

SOI-BCD8s (0.18µm)

o Melexis - XFab: BCD 0.35µm

o Tower Semiconductor : SOI-BCD 0.18µm

BCD 0.18µm

o Mitsubishi: BCD 3µm

o Rohm: BCD 0.35µm

o TSMC: BCD 0.35µm

In black, the new technologies add in the 2021 report.


Overview / Introduction

Evolution of BCD Technologieso Transistorso Isolationo Metal Layerso Passiveo High Voltage


Comparison

Related Analyses


Transistor - Vertical DMOS

STMicroelectronics VIPower M0-5 BCD process with vertical DMOS.The circuit integrates a vertical MOSFET that looks like the planarMOSFET in discrete package.

The last generation of BCD IC with vertical transistor integratestrench power MOSFET that enable an increase current density.

STMicroelectronics ViPower M05 VDMOS – cross-section SEM view ©2020 by System Plus Consulting

STMicroelectronics ViPower M05 VDMOS – top SEM view©2020 by System Plus Consulting



Evolution of BCD Technologieso Transistorso Isolationo Metal Layerso Passiveo High Voltage


Comparison

Related Analyses


Isolation – DTI

P-well

The DTI, Deep Trench Isolation allows to enhance the isolation between the transistors and increases the voltage in the power areawithout interfering with the CMOS and bipolar transistors.

The deep trenches are deeper than buried doping. The transistors are isolated on the sides by the trenches and above by theburied doping.

Two specific masks are used to make the DTI.

Infineon Deep Trench Isolation: SPT9 process – Cross-section SEM viewCross-Section after doping revelation ©2021 by System Plus Consulting

Freescale/NXP Deep Trench Isolation: SMARTMOS8 process – Cross-section SEM view ©2021 by System Plus Consulting




Foundry Technologies Reviewo Infineon: SPT9, BCD 90nm,

SMART6, SOIo STMicroelectronics: BCD6s,

SOI-BCD6s, BCD8s, BCD9, VIPower M0-3, 5 and 7

o Elmos: BCD0.8µmo Bosch: BCD6, BCD8o Melexis - Xfab: BCD 0.35µmo NXP: A-BCD3, A-BCD9,

SMARTMOSo Littelfuse: SOI high Voltageo Texas Instruments: LBC5,

LBC5-SOI, LBC8, LBC9o Analog Devices: BCD 0.7µm,

BCD 0.5µm, BCD 0.18µmo Tower Semi: BCD 0.35µm,

BCD 0.18µm, SOI-BCDo Denso: SOI-BCD0.8µm, SOI-

BCD 0.5µmo Renesas: BCD 0.15µmo Toyota: SOI-BCD 0.5µmo Toshiba: SOI high Voltageo Mitsubishi: BCD 3µmo Rohm: BCD 0.5µmo TSMC: BCD 0.35µm

ComparisonRelated AnalysesAbout System Plus Consulting

Infineon – SPT9 Cross-Section

The thick metal layer enhances the thermalmanagement. Copper XXµm, Nickel XXµmand palladium XXµm

DTI and thick metal layer in cross-section - SEM View

4 metal layers in copper

Complex wells and deep implantations forthe transistors and the isolation.

Deposited by epitaxy substrate

Deep trench with the core in polysilicondoped to ground the substrate.














STMicroelectronics – BCD6s-offline Characteristics – Die Example

• STMicroelectronics die manufactured with BCD6s-offline technology.• Die Dimension: XXmm² • 3-phase motor drives, inverter high temperature automotive application.

IC Die Overview – Optical View©2020 by System Plus Consulting

Die Delayering- Removal of Metal Layers©2020 by System Plus Consulting

High voltage areafloating structure

Analog

Analog














STMicroelectronics – BCD6s-offline Cross-Section

• Each high voltage area is insulated by XXXµm from another area.

Floating structure - Optical View

Backside with a metal layer - SEM View

PIS capacitor – SEM view

High voltage areafloating structure

XXXµm

XXXµm

Silicon substrate 375µm

Floating structure cross-section - Optical View














STMicroelectronics – BCD6s-offline Cross-Section

Lines in polysilicon around the high voltage area

Floating structure - Optical View

Floating structure cross-section - Optical View

Isolation layer in SiN

Floating structure - section - Optical View

XXXXXXXXXXXXXXXXXXXXXXXXXXX














Infineon – Thin-Film SOI Wafer Cost Breakdown





Comparison

Related Analyses


Comparison Table – 10mm² Die Price





Comparison

Related Analyses


Wafer Cost by Technology Node


R E L A T E DA N A L Y S E S



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Manufacturing Process Flow

Cost Analysis

Selling Price Analysis

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A Structure, Process and Cost Analysis

Reverse Costing® consists of disassembling a device or a system in orderto identify its technology and discern its manufacturing processes andthen using in-house models and tools to determine its cost.

Our Core Activity: Reverse Costing®





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bcd technology and cost comparison 2021

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