bcr1am marleni.pdf

Feb.1999

APPLICATIONContactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines,trigger circuit for low and medium triac, solid state relay,other general purpose control applications

MITSUBISHI SEMICONDUCTOR ⟨TRIAC⟩

BCR1AM-12LOW POWER USE

GLASS PASSIVATION TYPE

BCR1AM-12

• IT (RMS) ........................................................................ 1A• VDRM ....................................................................... 600V• IFGT !, IRGT !, IRGT # ............................................. 5mA• IFGT # .....................................................................10mA

Symbol

IT (RMS)

ITSM

I2t

PGM

PG (AV)

VGM

IGM

Tj

Tstg

—

Parameter

RMS on-state current

Surge on-state current

I2t for fusing

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

Peak gate current

Junction temperature

Storage temperature

Weight

Conditions

Commercial frequency, sine full wave 360° conduction, Tc=56°C 4

60Hz sinewave 1 full cycle, peak value, non-repetitive

Value corresponding to 1 cycle of half wave 60Hz, surge on-statecurrent

Typical value

Unit

A

A

A2s

W

W

V

A

°C

°C

g

Ratings

1.0

10

0.41

1

0.1

6

1

–40 ~ +125

–40 ~ +125

0.23

Symbol

VDRM

VDSM

Parameter

Repetitive peak off-state voltage 1

Non-repetitive peak off-state voltage 1

Voltage class

12

600

720

Unit

V

V

MAXIMUM RATINGS

1. Gate open.

TYPENAME

VOLTAGECLASS2

13

1 2 3

T1 TERMINAL T2 TERMINAL GATE TERMINAL

φ5.0 MAX

4.4

5.0

MA

X12

.5 M

IN

3.9

MA

X1.3

1.25 1.25CIRCUMSCRIBE

CIRCLEφ0.7

1 3 2

OUTLINE DRAWING Dimensionsin mm

JEDEC : TO-92

Feb.1999

4.42.40.80.4 1.2 1.6 2.0 2.8 3.2 3.6 4.0

102

7532

101

7532

100

7532

10–1

TC = 25°C

100 2 3 5 7 101

4

2

2 3 5 7 1024 4

6

8

10

0

MAXIMUM ON-STATE CHARACTERISTICS

ON

-ST

AT

E C

UR

RE

NT

(A

)

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

SU

RG

E O

N-S

TA

TE

CU

RR

EN

T (

A)

CONDUCTION TIME(CYCLES AT 60Hz)




Symbol

IDRM

VTM

VFGT !

VRGT !

VRGT #

VFGT #

IFGT !

IRGT !

IRGT #

IFGT #

VGD

Rth (j-c)

(dv/dt)c

Test conditions

Tj=125°C, VDRM applied

Tc=25°C, ITM=1.5A, Instantaneous measurement

Tj=25°C, VD=6V, RL=6Ω, RG=330Ω

Tj=25°C, VD=6V, RL=6Ω, RG=330Ω

Tj=125°C, VD=1/2VDRM

Junction to case 4

Unit

mA

V

V

V

V

V

mA

mA

mA

mA

V

°C/W

V/µs

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

—

!

@

#

$

!

@

#

$

2. Measurement using the gate trigger characteristics measurement circuit.3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.

Test conditionsVoltageclass

12

VDRM(V)

600

Unit

V/µs

Commutating voltage and current waveforms(inductive load)

(dv/dt) c

Min.

2

ELECTRICAL CHARACTERISTICS

Parameter

Repetitive peak off-state current

On-state voltage

Gate trigger voltage 2

Gate trigger current 2

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-statecommutating voltage

1. Junction temperatureTj=125°C

2. Rate of decay of on-state commutating current(di/dt)c=–0.5A/ms

3. Peak off-state voltageVD=400V

Limits

Min.

—

—

—

—

—

—

—

—

—

—

0.1

—

3

Max.

1.0

1.6

2.0

2.0

2.0

2.0

5

5

5

10

—

50

—

SUPPLYVOLTAGE TIME

TIME

TIME

MAIN CURRENT

MAINVOLTAGE

(di/dt)c

VD(dv/dt)c

PERFORMANCE CURVES

Feb.1999

10–1

2 3100 5 7 101 2 3 5 7 102 2 3 5 7 103

101

7532

100

7532

7532

10–2

VGM = 6V

PGM =1W

PG(AV)= 0.1W

IGM = 1A

VGD = 0.1V

IFGT III

IFGT IIRGT IIRGT III

MAXIMUM ON-STATE POWERDISSIPATION

ON

-ST

AT

E P

OW

ER

DIS

SIP

AT

ION

(W

)

RMS ON-STATE CURRENT (A)

ALLOWABLE CASE TEMPERATUREVS. RMS ON-STATE CURRENT

CA

SE

TE

MP

ER

AT

UR

E (

°C)


GA

TE

VO

LTA

GE

(V

)

GATE CURRENT (mA)

GATE TRIGGER CURRENT VS.JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

GATE TRIGGER VOLTAGE VS.JUNCTION TEMPERATURE


101

103

75

32

–60 –20 20

102

75

32

60 100 140

4

4

–40 0 40 80 120

VRGT III, VFGT III

VFGT I, VRGT I

TYPICAL EXAMPLE

101

103

75

32

–60 –20 20

102

75

32

60 100 140

4

4

–40 0 40 80 120

IRGT III, IFGT III

IFGT I, IRGT I

TYPICAL EXAMPLE

2.0

1.6

1.2

0.8

0.4

02.00 0.4 0.8 1.2 1.6

360°CONDUCTIONRESISTIVE,INDUCTIVELOADS

160

120

100

60

20

01.60 0.2 0.6 1.0 1.4

40

80

140

0.4 0.8 1.2

360°CONDUCTION

CURVES APPLY REGARDLESSOF CONDUCTION ANGLERESISTIVE, INDUCTIVE LOADS

MAXIMUM TRANSIENT THERMALIMPEDANCE CHARACTERISTICS

TRA

NS

IEN

T TH

ER

MA

L IM

PE

DA

NC

E (

°C/W

)

CONDUCTION TIME(CYCLES AT 60Hz)

101

2 310–1 5 7 100 2 3 5 7 101 2 3 5 7 102

103

7532

102

7532

7532

100

2 3102 5 7 103 2 3 5 7 104 2 3 5 7 105

JUNCTION TO AMBIENT

JUNCTION TO CASE

GATE CHARACTERISTICS

100

(%)

GAT

E TR

IGG

ER C

URRE

NT (T

j = t°

C)G

ATE

TRIG

GER

CUR

RENT

(Tj =

25°

C)

100

(%)

GAT

E TR

IGG

ER V

OLT

AGE

( Tj =

t°C)

GAT

E TR

IGG

ER V

OLT

AGE

( Tj =

25°

C)




Feb.1999

LACHING CURRENT VS.JUNCTION TEMPERATURE

LAC

HIN

G C

UR

RE

NT

(m

A)


ALLOWABLE AMBIENT TEMPERATUREVS. RMS ON-STATE CURRENT

AM

BIE

NT

TE

MP

ER

AT

UR

E (

°C)


REPETITIVE PEAK OFF-STATECURRENT VS. JUNCTION

TEMPERATURE


BREAKOVER VOLTAGE VS.JUNCTION TEMPERATURE


HOLDING CURRENT VS.JUNCTION TEMPERATURE


BREAKOVER VOLTAGE VS. RATE OF RISE OF

OFF-STATE VOLTAGE

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

100

(%)

BREA

KOVE

R VO

LTAG

E ( d

v/dt

= x

V/µ

s)BR

EAKO

VER

VOLT

AGE

( dv/

dt =

1V

/µs)

160

100

80

40

20

014040–40–60 –20 0 20 60 80

140

100120

60

120

TYPICAL EXAMPLE

101

103

75

32

–60 –20 20

102

75

32

60 100 140

4

4

–40 0 40 80 120

TYPICAL EXAMPLE

14040–40–60 –20 0 20 60 80 100120

105

7532

104

7532

103

7532

102

TYPICAL EXAMPLE 160

120

100

60

20

01.60 0.2 0.6 1.0 1.4

40

80

140

0.4 0.8 1.2

CURVES APPLY REGARDLESSOF CONDUCTION ANGLENATURAL CONVECTIONNO FINS

RESISTIVE,INDUCTIVELOADS

100

(%)

HOLD

ING

CUR

RENT

( Tj =

t°C)

HOLD

ING

CUR

RENT

( Tj =

25°

C)

100

(%)

REPE

TITI

VE P

EAK

OFF

-STA

TE C

URRE

NT ( T

j = t°

C)RE

PETI

TIVE

PEA

K O

FF-S

TATE

CUR

RENT

( Tj =

25°

C)

100

(%)

BREA

KOVE

R VO

LTAG

E ( T

j = t°

C)BR

EAKO

VER

VOLT

AGE

( Tj =

25°

C)

140–60 –20 20 60 100

103

7532

102

7532

101

7532

100–40 0 40 80 120

T2+, G+

T2–, G–

T2–, G+

T2+, G–

TYPICALEXAMPLE

TYPICALEXAMPLE

DISTRIBUTION

2 3100 5 7 101 2 3 5 7 102 2 3 5 7 103

120

0

20

40

60

80

100

140

160TYPICAL EXAMPLE

Tj = 125°C

I QUADRANT

III QUADRANT




Feb.1999

COMMUTATION CHARACTERISTICS

CR

ITIC

AL

RA

TE

OF

RIS

E O

F O

FF

-ST

AT

EC

OM

MU

TA

TIN

G V

OLT

AG

E (

V/µ

s)

RATE OF DECAY OF ON-STATECOMMUTATING CURRENT (A/ms)

GATE TRIGGER CURRENT VS.GATE CURRENT PULSE WIDTH

GATE CURRENT PULSE WIDTH (µs)10

0 (%

)G

ATE

TRIG

GER

CU

RR

ENT

( tw)

GAT

E TR

IGG

ER C

UR

REN

T ( D

C)

101

103

75

32

100 2 3 5 7 101

102

75

32

2 3 5 7 102

4

4

4 4

IRGT III

IFGT I

IRGT I

IFGT III

TYPICAL EXAMPLE 101

75

32

10–1 2 3 5 7 100

100

75

32

2 3 5 7 101

4

4

4 410–1

TC = 125°CIT = 1Aτ = 500µsVD = 200V

TYPICAL EXAMPLE

I QUADRANT

III QUADRANTMINIMUMCHARAC-TERISTICSVALUE




6Ω 6Ω

6Ω 6Ω

6V 6V

6V 6V

RG RG

RG RG

A

V

A

V

A

V

A

V

TEST PROCEDURE 1

TEST PROCEDURE 3

TEST PROCEDURE 2

TEST PROCEDURE 4

GATE TRIGGER CHARACTERISTICSTEST CIRCUITS

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bcr1am marleni.pdf

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