capacitance mapping of composites · 1 department of physics, measurement and modelling lab, indian...
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7th Asia-Pacific Workshop on Structural Health Monitoring
November 12-15, 2018 Hong Kong SAR, P.R. China
Capacitance Mapping of Composites
Gokul Raj R 1*, C. V. Krishnamurthy 1
1 Department of Physics, Measurement and Modelling Lab, Indian Institute of Technology, Chennai-
600036, India
Email: [email protected]; [email protected]
ABSTRACT
Non-contact capacitance mapping is proposed as a complimentary technique for structural health
monitoring of dielectric media in general and composites in particular. An XY scanner has been
fabricated with parallel electrode as probes with a provision for maintaining a constant air gap, both at
the top and bottom surface of flat samples to enable spatial mapping of capacitance. The probes
connected to an impedance analyser provides the real and imaginary parts of capacitance/ impedance
respectively over a frequency range of 100 Hz to 1 MHz . Spatial maps of the complex capacitance are
obtained for 50 mm x 200 mm Glass fibre reinforced composite and 30 mm x 100 mm Plexiglas with
and without defects. A discussion on the role of electrode dimensions, probe lift-off and scan step
would be presented. Results on the contrast between defect-free and defective regions and the effect of
sample thickness variations on the measured capacitance would be described. Finally, a scheme
involving model-assisted extraction of dielectric constant from measured capacitance will be presented.
KEYWORDS: Parallel Electrode Capacitor, Dielectric Constant, Capacitance Mapping.
1. Introduction
Non-contact capacitance mapping is proposed as a complimentary technique for structural health
monitoring of dielectric media in general. The challenge is to identify the local capacitance/ dielectric
changes which arises from the inhomogeneities in the samples.Recently, some studies have been
reported with non-contact measurement of dielectric samples[1-3].Capacitance mapping has been
reported with co-planar electrode configuration. However, non-contact capacitance mapping with
electrodes on either side of an extended planar dielectric medium has received very little attention.
Such non-contact mapping would be valuable for planar dielectric media in general and composites in
particular where access is available on both sides. We present preliminary results on capacitance
mapping over a range of frequencies of extended defect-free dielectric media and media with
engineered defects. Simulations, carried out to assist in the interpretation of the measured results, are
also described.
2. Experiments
2.1 Description of the experimental set-up
The experimental set up as shown in figure 1 consists of parallel square electrode capacitor having
dimensions 10mm×10mm and electrode thickness 2mm. The electrode/probe has been attached to the
arms of the scanner which can be moved along X, Y and Z directions with the aid of stepper motor.
The stepper motor has been controlled using a lab-view program.The sample holder holds the sample,
* Corresponding author.
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over which the probe moves. The scan step has to be fixed depending on the nature of the defect. The
probe moves to a particular location and then waits till the impedance analyser completes a frequency
sweep at that location. Solartron SI 1260 impedance analyser has been employed to measure the
impedance/capacitance response for a wide range of frequencies, 100Hz-1MHz. A potential difference
of 1V has been maintained across the parallel square electrodes. The Solartron impedance analyser
provides an averaging option as “integration over cycles” to minimize the noise. The value of integration over cycles has been chosen to be 1000 cycles for the entire set of samples in the current
investigation.
The schematic of the experimental set-up is shown in figure 2.
Impedance Analyzer Scanner with stepper motors
Figure 2. Schematic representation of the experimental set up.
Figure 1.The experimental set up: (a) XY Scanner with stepper motors and square electrode
attached to its arm (b) The parallel square electrode capacitor with fixed air gap between top and
bottom electrodes (probe-holder) (c)Solartron SI1260 impedance analyser to measure
impedance/capacitance.
(a) (b)
(c)
(a)
2.2 Capacitance Scan over different dielectric media
2.2.1 Scan under ambient conditions
Scans are carried out with the square shaped electrodes of dimensions 20mm×20mm and
separated by 5.4mm. The scan step has been chosen to be 10mm. The 2D scan was carried out
under ambient conditions with temperature at 25 deg C and relative humidity of 50%. The
mean value of the capacitance is found to be 0.94 pF and the fluctuations are found to be
within 0.01pF. The results for the capacitance at 1 MHz are shown in figure 3.
2.2.2Perspex sheet with engineered defects
A Perspex sheet of 2.76mm thickness, with and without defects has been used to demonstrate the
capacitance mapping / imaging. The samples under investigation have been shown in figure 4 and the
scan has been performed over a particular column. The defects have been created as circular pits with
diameters and depths as follows:
Table 1. Circular defect parameters in Perspex sheet
Top to
bottom as
in Fig. 4
(S.No)
Diameter of the
defect(mm)
Depth of
defect(mm)
1. 10 mm 2 mm
2. 8 mm 2 mm
3. 5 mm 1.5 mm
4. 6 mm 1 mm
5. 6 mm 1 mm
Figure 3. Capacitance scan (1MHz) over a total area 40mm×100mm with parallel square electrode
capacitor with air dielectric kept at an electrode separation 5. 4mm.The dimension of square electrode has
been chosen to be 20mm×20mm, with a scan step 10mm.The histogram indicates that the distribution is
not symmetric but is skewed towards slightly lower values.
The parallel square electrodes of dimension 10mm×10mm have been placed over the sample with a
fixed air gap of 0.2mm. The electrodes were initially placed outside the sample (air dielectric) and
then allowed to move over the sample with scan steps of 2mm and finally it moves out to a region
where there is no sample. The 1-D scan (line scan) has been performed over both the defective as well
as non-defective Perspex samples, keeping all other parameters as fixed. Table 1 describes the defect
parameters over which the scan has been performed.
Figure 5 describes the capacitance response of Perspex sample with and without defects at two
different frequencies,1 kHz and 100 Hz. The impedance/capacitance response of the sample seems to
be different at different frequencies. The response at 1kHz stands better when compared to the
response at 100Hz, which looks noisier. The fluctuations at 1kHz response has been found to be
0.05pF at 1kHz and the fluctuations remains almost same at higher frequencies,making the response at
1kHz, a representative for capacitance mapping.Figure 6 presents the 2D scan of
impedance/capacitance over the defects at 1 kHz.
Figure 4.Perspex sample with (a) and without (b) engineered defects.
(a) (b)
Figure 5.Line Scan (1-D scan) over defective and non-defective sample at 1kHz and 100Hz.
The initial and final drop in capacitance as shown in figure 5 and figure 6 is caused by the edges of the
sample. As the parallel square electrodes approach the Perspex sample, the capacitance increases and
as the electrodes recede from the sample the capacitance drops. The local variations in dielectric
constant appear as dips in the capacitance map corresponding to the defects in Perspex.
2.2.3Glass epoxy composites
The Glass epoxy composites have been fabricated with Teflon defects inserted in between the layers.
The thickness of the sample was 5.1mm. A constant air gap of 0.2mm has been maintained as probe
lift-off (space between the upper electrode and upper face of the sample and lower electrode and lower
face of the sample). To begin with, the samples were scanned with 10mm×10mm and 20mm×20mm
parallel square electrodes over a range of frequencies.The scan step has been chosen to be half the
electrode dimension. Figure7 describes the spatial variation of capacitance for both 20mm×20mm and
10mm×10mm probes.
Figure 6. 2D scan of impedance/capacitance over the defects at 1kHz.
(a) (b)
Figure 7.Spatial variation of capacitance at 1MHz for (a) 20mm×20mm parallel square electrode with
10 mm scan step (b)10mm×10mm parallel square electrode with 5mm scan step.
The variation over the sample is from 0.69pF to 0.89pF, the difference amounts to be 0.2pF which can
be explained by the thickness variation in the sample.The above scan results do not indicate explicitly
detect the presence of defect. Scans in 1D were carried out at other frequencies with a finer scan step
of 0.2 mm. Figure 8 shows the 1D profile scanned at 10 kHz with 20mm×20mm electrode with
0.2mm scan step.Asmall defect-induced contrast can be seen.
3. Simulations
Capacitance mapping involves scanning an extended dielectric medium with finite-sized electrodes. At
any location, the dielectric medium would extend beyond the lateral extent of the electrodes. The
capacitance of this configuration cannot be related to the well-known expressionԑ𝟎ԑ𝒓𝑨𝒅 . Furthermore,
since capacitance mapping involves a small but finite air-gap between the sample and the electrodes,
the measured capacitance is related to the dielectric constant of the medium in an unknown way. There
are no expressions available in the literature that can be applied to the present configuration. To
address this issue, FEM simulations have been carried out with COMSOL Multiphysics 5.2a 4for
extended dielectric media of thickness 2.76mm with a fixed air gap of 0.2mm at the top and bottom of
the medium for a range of dielectric constants. The results are shown in figure 9.
ԑ𝑟
Figure 9. Numerical values of capacitance for various dielectric constants for a fixed air gap(0.2mm)
at the top and bottom interface.
Figure 8.1D scan of capacitance over the Teflon defect of diameter 20mm using
20mm×20mm parallel square electrode with probe lift-off 0.2mm at 10kHz.
For a given dielectric constant, the capacitance value increases with increase in the dielectric extension
and the value saturates beyond a certain extension. The capacitance values plotted in figure 9 are the
saturated capacitance values. The saturation extension of dielectric has been found to be 35mm from
the electrode edge through simulations. The measured capacitance averaged over the defect-free
region of the Perspex material is taken to be 1.08pF from figure 5. This capacitance value is used with
figure 9 to read off the true dielectric constant (ԑ𝑟 = 2.8) associated with the extended medium.
Perspex sample of thickness 2.76 mm and side dimension 100 mm has been chosen to study
(experimental/simulation) the capacitance variation over the defective and non-defective portions on
the same Perspex sample. Figure 10 represents the schematic of the defects under study. The arrows
represent the centre of the defect and the markings 10mm, 30mm, 50mm, 70mm and 88mm represents
the location of the defect from the origin(O) of the Perspex sample. The diameters of the engineered
defects have been 10mm, 8mm, 5mm, 6mm, and 6mm respectively, as shown in figure 10.
Experimental 1D capacitance scans have been carried out with 10 mm x 10 mm electrodes on
defective and non-defective regions of the Perspex sample described in figure 10. Capacitance
responses have been obtained for a range of frequencies (100 Hz to 1 MHz). Figure 11 shows the
response at 1.124 kHz. The data at other frequencies shows a similar trend. The capacitance scan
response for non-defective Perspex sample shows a variation of 0.07pF across the length of the
scanned sample. This variation can be attributed to the thickness variation in the Perspex sample
which amounts to be roughly 0.1mm. Also, the signatures of the defects have been captured
successfully in the capacitance scan, with dips representing the defects.
100 mm
10mm 8 mm 5 mm 6 mm 6 mm
10mm 30mm 50mm 70mm 88mm
Figure 10. Schematic of the sample where the pit dimensions and locations are specified.
O
Figure11. 1D experimental scan of capacitance over Perspex with and without defects at 1.124
kHz.
0.07 pF
Figure. 12.1-D experimental capacitance scan over the Perspex sample
with engineered defects and its comparison with the FEM simulations
The geometry of the sample with the defects has been explicitly modelled in FEM. The regions where
Perspex is absent are assumed to be occupied by free space and a value of 1 is used to represent the
relative permittivity of free space. A dielectric constant value 2.8 was used in FEM calculations to
represent the Perspex slab such that it agrees with the experimental capacitance determined in the
defect free region of the sample away from all edges. FEM simulations have been performed over the
defective portion on the Perspex sample and the results have been compared with experiments, as
shown in figure 12.
Figure 12 shows that FEM simulations capture quite well the overall trends observed experimentally -
namely, the rapid increase in the capacitance as the electrodes moves over the sample domain, the
oscillations in the capacitance as the electrodes pass over the various defects and the rapid fall of the
capacitance as the electrodes move out of the sample domain. The spatial scan profiles obtained
through FEM closely follow the observed scan profile.
The capacitance is based on the volume of the region sampled by the electrodes. When the volume
occupied by the defect is less than the sampled volume (electrode volume), the capacitance will be
nearly independent of the actual location of the defect volume with respect to the electrodes.
Capacitance would change appreciably however, when defect volume goes out of the sampled
volume.
The defect volumes decrease as the scan progresses from the left towards the right. The maximum
change in capacitance is for the first defect and reduces for the second defect due to reduced defect
volume as the latter has a lesser diameter than the former, even though their depths are the same.
For the third and fourth defects, the defect volumes are nearly equal and lead to nearly the same
changes in capacitance. Since the edges of each of these defects are quite close, the edges are not
clearly resolved leading to a response that is more flattened at the lower portion of the dip.
For the last defect, as the farthest edge of the defect is quite close to the sample edge, they are not well
resolved in the capacitance map.
For the larger defects (first defect), since the edges are separated, the change in capacitance as a
function of scan step resembles the step response for an edge. However, the step responses for the left
and right edges of the defect overlap, due to the electrode dimension, leading to a triangular feature in
the capacitance scan.
However, the role of the ambient air prevalent during experiments and not accounted for in FEM
simulations appears to be a possible source of the discrepancy between experiment and simulation.
Further studies are underway to address this discrepancy.
3. Conclusions
Non-contact capacitance mapping over extended dielectric media (Perspex and Glass fiber reinforced
epoxy composites) has been demonstrated with square-shaped electrodes in sandwich configuration.
The capacitance mapping is carried out over a wide range of frequencies at each scan location thus
generating a large amount of data that contains information on the degree of homogeneity in the
complex permittivity of the medium as well as on the spatial extent of local inhomgeneities in the
complex permittivity. The data in the form of 2D images can be used to quantify the medium as well
as the ‘defects’.
The detectable capacitance change sets the limits on the contrast in the dielectric constant. The
electrode dimension and the scan step determine the spatial resolution with which inhomogeneities can
be mapped. Numerical simulations have been carried out to assist in the assessment of the observed
trends in the capacitance maps. It is believed that further simulations would help establish a one-to-one
correspondence between the two making it a quantitative tool.
Capacitance mapping is proposed as an alternate non-destructive assessment technique for extended
non-metallic media such as glass and carbon composites particularly for electromagnetic applications
where inhomogeneities in the electrical permittivity play a crucial role. The proposed technique could
compliment other NDE techniques to provide a comprehensive assessment of a structure.
Acknowledgement
This work is an extension of a project (ASL/31/15/4051/CARS/054 dt. 29 July 2015) funded by
Advanced Systems Laboratory (ASL), Hyderabad, India during 2015-2017. We thank the Director,
ASL and the Director, DoNDE, ASL for the financial assistance. We also would like to thank Dr.
K.Srinivas (Sc ‘F’) at DoNDE, ASL for all the technical discussions.
References
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vol. 20, pp. 913–921, 2013.
[2] X. Xu, “Enhancements in Dielectric Response Characterization of Insulation Materials,” Licentiate thesis, Materials and Manufacturing Technology, High voltage engineering, Chalmers
University of Technology, Gothenburg, Sweden, 2013.
[3] Patrick P. Chavez, “Accurate Complex Permittivity Measurement with Two-Electrode Contact-
Free Apparatus,” IEEE Trans. Dielectr. Electr. Insul., vol. 25, pp. 1470-1478,2018.
[4] COMSOL Multiphysics® v. 5.2a. www.comsol.com. COMSOL AB, (Stockholm, Sweden).
[5] Gokul Raj R and C.V. Krishnamurthy, “Static dielectric constant assessment from capacitance over a wide range of electrode separations,” J. Electrostatics, vol.87, pp.19–25,2017.