cas300m12bm2 vds 1.2kv, 5.0 mΩ all-silicon carbide esw ... · 6 00122. - typical performance 8 10...

9
1 Subject to change without notice. www.cree.com CAS300M12BM2 1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec TM Diode Datasheet: CAS300M12BM2,Rev. - Features Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Applications Induction Heating Motor Drives Solar and Wind Inverters UPS and SMPS Traction Package 62mm x 106mm x 30mm Maximum Ratings (T C = 25˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Notes V DSmax Drain - Source Voltage 1.2 kV V GSmax Gate - Source Voltage -10/+25 V Absolute Maximum values V GSop Gate - Source Voltage -5/20 V Recommended Operational Values I D Continuous Drain Current 404 A VGS = 20 V, T C = 25 ˚C Fig. 24 285 VGS = 20 V, T C = 90 ˚C I D(pulse) Pulsed Drain Current 1500 A Pulse width t P = 200 μs Repetition rate limited by Tjmax,TC = 25˚C T Jmax Junction Temperature 150 ˚C T C ,T STG Case and Storage Temperature Range -40 to +125 ˚C V isol Case Isolation Voltage 4.0 kV AC, 50 Hz , 1 min L Stray Stray Inductance 14 nH Measured between terminals 2 and 3 P D Power Dissipation 1660 W TC = 25 ˚C, TJ = 150 ˚C Fig. 23 Part Number Package Marking CAS300M12BM2 Half-Bridge Module CAS300M12BM2 V DS 1.2 kV E sw, Total @ 300A 12.0 mJ R DS(on) 5.0 mΩ

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Page 1: CAS300M12BM2 VDS 1.2kV, 5.0 mΩ All-Silicon Carbide Esw ... · 6 00122. - Typical Performance 8 10 12 14 16 18 20 Switching Loss (mJ) ETotal Conditions: TJ= 25 °C VDD= 600 V RG(ext)=

1Subject to change without notice.www.cree.com

CAS300M12BM21.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge ModuleC2M MOSFET and Z-RecTM Diode

Dat

ash

eet:

CA

S3

00

M1

2B

M2

,Rev

. -

Features• UltraLowLoss• High-FrequencyOperation• ZeroReverseRecoveryCurrentfromDiode• ZeroTurn-offTailCurrentfromMOSFET• Normally-off,Fail-safeDeviceOperation• EaseofParalleling• CopperBaseplateandAluminumNitrideInsulator

System Benefits• EnablesCompactandLightweightSystems• HighEfficiencyOperation• MitigatesOver-voltageProtection• ReducedThermalRequirements• ReducedSystemCost

Applications• InductionHeating• MotorDrives• SolarandWindInverters• UPSandSMPS• Traction

Package 62mm x 106mm x 30mm

Maximum Ratings (TC = 25˚C unless otherwise specified)

Symbol Parameter Value Unit Test Conditions Notes

VDSmax Drain-SourceVoltage 1.2 kV

VGSmax Gate-SourceVoltage -10/+25 V AbsoluteMaximumvalues

VGSop Gate-SourceVoltage -5/20 V RecommendedOperationalValues

ID ContinuousDrainCurrent404

AVGS=20V,TC=25˚C

Fig.24285 VGS=20V,TC=90˚C

ID(pulse) PulsedDrainCurrent 1500 A PulsewidthtP=200μsRepetitionratelimitedbyTjmax,TC=25˚C

TJmax JunctionTemperature 150 ˚C

TC,TSTG CaseandStorageTemperatureRange -40to+125 ˚C

Visol CaseIsolationVoltage 4.0 kV AC,50Hz,1min

LStray StrayInductance 14 nH Measuredbetweenterminals2and3

PD PowerDissipation 1660 W TC=25˚C,TJ=150˚C Fig.23

Part Number Package Marking

CAS300M12BM2 Half-BridgeModule CAS300M12BM2

VDS 1.2 kVEsw, Total @ 300A 12.0 mJRDS(on) 5.0 mΩ

Page 2: CAS300M12BM2 VDS 1.2kV, 5.0 mΩ All-Silicon Carbide Esw ... · 6 00122. - Typical Performance 8 10 12 14 16 18 20 Switching Loss (mJ) ETotal Conditions: TJ= 25 °C VDD= 600 V RG(ext)=

2 CAS300M12BM2,Rev. -

Electrical Characteristics (TC = 25˚C unless otherwise specified)

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note

V(BR)DSS Drain-SourceBreakdownVoltage 1.2 kV VGS,=0V,ID=1mA

VGS(th) GateThresholdVoltage 1.8 2.3 V VDS=10V,ID=15mA Fig7

IDSS ZeroGateVoltageDrainCurrent500 2000 μA VDS=1.2kV,VGS=0V

1000 VDS=1.2kV,VGS=0V,TJ=150˚C

IGSS Gate-SourceLeakageCurrent 1 100 nA VGS=20V,VDS=0V

RDS(on) OnStateResistance5.0 5.7

mΩVGS=20V,IDS=300A

Fig.4,5,68.6 9.8 VGS=20V,IDS=300A,

TJ=150˚C

gfs Transconductance94.8

SVDS=20V,IDS=300A

Fig.893.3 VDS=20V,ID=300A,TJ=150˚C

Ciss InputCapacitance 11.7

nF VDS=600V,f=200kHz,VAC=25mV

Fig.16,17

Coss OutputCapacitance 2.55

Crss ReverseTransferCapacitance 0.07

Eon Turn-OnSwitchingEnergy 6.05 mJ VDD=600V,VGS=-5V/+20VID=300A,RG(ext)=2.5ΩNote:IEC60747-8-4Definitions

Fig.19,20EOff Turn-OffSwitchingEnergy

5.95 mJ

RG(int) InternalGateResistance 3.0 Ω f=200kHz,VAC=25mV

QGS Gate-SourceCharge 166

nC VDD=800V,VGS=-5V/+20V,ID=300A,PerJEDEC24pg27

Fig.15QGD Gate-DrainCharge 475

QG TotalGateCharge 1025

td(on) Turn-ondelaytime 76 ns VDD=600V,VGS=-5/+20V,ID=300A,RG(ext)=2.5Ω,TimingrelativetoVDSNote:IEC60747-8-4,pg83Inductiveload

Fig.25tr RiseTime 68 ns

td(off) Turn-offdelaytime 168 ns

tf FallTime 43 ns

Free-Wheeling SiC Schottky Diode CharacteristicsSymbol Parameter Min. Typ. Max. Unit Test Conditions Note

VSD DiodeForwardVoltage1.7 2.0

VIF=300A,VGS=0 Fig.9,

10,112.2 2.5 IF=300A,TJ=150˚C,VGS=0

QC TotalCapacitiveCharge 3.2 μC

Note:Thereverserecoveryispurelycapacitive

Thermal Characteristics

Symbol Parameter Min. Typ. Max. Unit Test Conditions Note

RthJCM ThermalResistanceJuction-to-CaseforMOSFET 0.070 0.075˚C/W

Tc=90˚C,PD=150W Fig.27,28RthJCD ThermalResistanceJuction-to-CaseforDiode 0.073 0.076 Tc=90˚C,PD=130W

Additional Module Data

Symbol Parameter Max. Unit Test Condtion

W Weight 300 g

M MountingTorque 5 Nm Toheatsinkandterminals

ClearanceDistance 12 mm Terminaltoterminal

CreepageDistance30 mm Terminaltoterminal

40 mm Terminaltobaseplate

Page 3: CAS300M12BM2 VDS 1.2kV, 5.0 mΩ All-Silicon Carbide Esw ... · 6 00122. - Typical Performance 8 10 12 14 16 18 20 Switching Loss (mJ) ETotal Conditions: TJ= 25 °C VDD= 600 V RG(ext)=

3 CAS300M12BM2,Rev. -

Typical Performance

200

300

400

500

600

-Sou

rce

Curr

ent,

I DS(A

)

VGS = 20 V

VGS = 18 V

VGS = 10 V

VGS = 12 V

VGS = 14 VVGS = 16 V

0

100

200

0 1 2 3 4 5 6 7 8

Drai

n-So

urce

Cur

rent

, I

Drain-Source Voltage VDS (V)

Conditions:TJ = -40°Ctp = 200 µs

200

300

400

500

600

-Sou

rce

Curr

ent,

I DS(A

)

VGS = 20 V

VGS = 18 V

VGS = 10 V

VGS = 12 V

VGS = 14 V

VGS = 16 V

0

100

200

0 1 2 3 4 5 6 7 8

Drai

n-So

urce

Cur

rent

, I

Drain-Source Voltage VDS (V)

Conditions:TJ = 25°Ctp = 200 µs

Figure2.TypicalOutputCharacteristicsTJ=25˚CFigure1.TypicalOutputCharacteristicsTJ=-40˚C

0.8

1.0

1.2

1.4

1.6

1.8

2.0O

n Re

sista

nce,

RDS

On

(p.u

.)Conditions:IDS = 300 AVGS = 20 Vtp = 200 µs

0.0

0.2

0.4

0.6

-50 -25 0 25 50 75 100 125 150

On

Resis

tanc

e, R

Junction Temperature, TJ (°C)

200

300

400

500

600

-Sou

rce

Curr

ent,

I DS(A

)

VGS = 20 V

VGS = 18 V

VGS = 10 V

VGS = 12 V

VGS = 14 V

VGS = 16 V

0

100

200

0 1 2 3 4 5 6 7 8

Drai

n-So

urce

Cur

rent

, I

Drain-Source Voltage VDS (V)

Conditions:TJ = 150°Ctp = 200 µs

Figure6.TypicalOn-Resistancevs.GateVoltage

Figure4.NormalizedOn-Resistancevs.Temperature

4

6

8

10

12

On

Resis

tanc

e, R

DS O

n(m

Ω)

VGS = 20 V

VGS = 18 V

VGS = 16 V

VGS = 14 VVGS = 12 V

0

2

4

-50 -25 0 25 50 75 100 125 150

On

Resis

tanc

e, R

Junction Temperature, TJ (°C)

Conditions:IDS = 300 Atp = 200 µs

0

2

4

6

8

10

12

14

16

18

20

10 12 14 16 18 20

On-R

esist

ance

, RDS

ON

(mΩ)

Gate-Source Voltage, VGS (V)

Tj = - 40 °C

Tj = 25 °C

Tj = 150 °C

Conditions:IDS = 300 Atp = 200 µs

Figure5.TypicalOn-Resistancevs.TemperatureforVariousGate-SourceVoltage

Figure3.TypicalOutputCharacteristicsTJ=150˚C

Page 4: CAS300M12BM2 VDS 1.2kV, 5.0 mΩ All-Silicon Carbide Esw ... · 6 00122. - Typical Performance 8 10 12 14 16 18 20 Switching Loss (mJ) ETotal Conditions: TJ= 25 °C VDD= 600 V RG(ext)=

4 CAS300M12BM2,Rev. -

-300

-200

-100

0-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0

-Sou

rce

Curr

ent,

I DS(A

)

VGS = -2 V

V = -5 V

VGS = 0 V

-600

-500

-400

Drai

n-So

urce

Cur

rent

, I

Drain-Source Voltage VDS (V)

Conditions:TJ = -40 °Ctp = 200 µs

VGS = -5 V

Typical Performance

1.0

1.5

2.0

2.5

3.0

Thre

shol

d Vo

ltage

, Vth

(V)

ConditionsVDS = 10 VIDS = 0.5 mA

ConditionsVDS = 10 VIDS = 15 mA

Typ

0.0

0.5

1.0

-50 -25 0 25 50 75 100 125 150

Thre

shol

d Vo

ltage

, V

Junction Temperature TJ (°C)

200

300

400

500

Sour

ce C

urre

nt, I

DS(A

)

Conditions:VDS = 20 Vtp < 200 µs

TJ = 150 °C

TJ = -40 °C

TJ = 25 °C

0

100

0 2 4 6 8 10 12 14

Drai

n-So

urce

Cur

rent

, I

Gate-Source Voltage, VGS (V)

TJ = -40 °C

-300

-200

-100

0-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0

-Sou

rce

Curr

ent,

I DS(A

)

-600

-500

-400Drai

n-So

urce

Cur

rent

, I

Drain-Source Voltage VDS (V)

Conditions:TJ = 25°Ctp = 200 µs

VGS = -2 V

VGS = -5 V VGS = 0 V

Figure8.TransferCharacteristicforVariousJunctionTemperatures

Figure10.DiodeCharacteristicat25˚CFigure9.DiodeCharacteristicat-40˚C

-300

-200

-100

0-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0

-Sou

rce

Curr

ent,

I DS(A

)

-600

-500

-400Drai

n-So

urce

Cur

rent

, I

Drain-Source Voltage VDS (V)

Conditions:TJ = 150°Ctp = 200 µs

VGS = -2 V

VGS = -5 VVGS = 0 V

-300

-200

-100

0-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0

-Sou

rce

Curr

ent,

I DS(A

)

VGS = 10 V

VGS = 5 V

V = 20 V

VGS = 15 V

VGS = 0 V

-600

-500

-400Drai

n-So

urce

Cur

rent

, I

Drain-Source Voltage VDS (V)

Conditions:TJ = 25 °Ctp = 200 µs

Conditions:TJ = -40 °Ctp = 200 µs

VGS = 20 V

Figure12.3rdQuadrantCharacteristicat-40˚C

Figure7.ThresholdVoltagevs.Temperature

Figure11.DiodeCharacteristicat150˚C

Page 5: CAS300M12BM2 VDS 1.2kV, 5.0 mΩ All-Silicon Carbide Esw ... · 6 00122. - Typical Performance 8 10 12 14 16 18 20 Switching Loss (mJ) ETotal Conditions: TJ= 25 °C VDD= 600 V RG(ext)=

5 CAS300M12BM2,Rev. -

10

15

20

25

Sour

ce V

olta

ge, V

GS(V

)

Conditions:TJ = 25 °CIDS = 300 AVDS = 1000 V

-5

0

5

0 200 400 600 800 1000 1200

Gate

-Sou

rce

Volta

ge, V

Gate Charge (nC)

Typical Performance

-300

-200

-100

0-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0

-Sou

rce

Curr

ent,

I DS(A

)

VGS = 10 V

VGS = 5 V

VGS = 15 V

VGS = 0 V

-600

-500

-400Drai

n-So

urce

Cur

rent

, I

Drain-Source Voltage VDS (V)

Conditions:TJ = 25 °Ctp = 200 µs

Conditions:TJ = 25°Ctp = 200 µs

VGS = 20 V

-150

-100

-50

0-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0

-Sou

rce

Curr

ent,

I DS(A

)

VGS = 10 V

VGS = 5 V

V = 20 V

VGS = 15 V

VGS = 0 V

-300

-250

-200Drai

n-So

urce

Cur

rent

, I

Drain-Source Voltage VDS (V)

Conditions:TJ = 25 °Ctp = 200 µs

Conditions:TJ = 150°Ctp = 200 µs

VGS = 20 V

Figure14.3rdQuadrantCharacteristicat150˚C

1

10

100Ca

pacit

ance

(nF)

Ciss

Coss

Conditions:TJ = 25 °CVAC = 25 mVf = 200 kHz

0.01

0.1

0 50 100 150 200

Capa

citan

ce (n

F)

Drain-Source Voltage, VDS (V)

Crss

Figure13.3rdQuadrantCharacteristicat25˚C

1

10

100

Capa

citan

ce (n

F)

Ciss

Coss

Conditions:TJ = 25 °CVAC = 25 mVf = 200 kHz

0.01

0.1

0 200 400 600 800 1000

Capa

citan

ce (n

F)

Drain-Source Voltage, VDS (V)

Crss

0.6

0.8

1

1.2

1.4

1.6

Stor

ed E

nerg

y, E OS

S(m

J)

0

0.2

0.4

0 200 400 600 800 1000 1200

Stor

ed E

nerg

y, E

Drain to Source Voltage, VDS (V)

Figure18.TypicalOutputCapacitorStoredEnergy

Figure15.TypicalGateChargeCharacteristics Figure16.TypicalCapacitancesvs.Drain-SourceVoltage(0-200V)

Figure17.TypicalCapacitancesvs.Drain-SourceVoltage(0-1kV)

Page 6: CAS300M12BM2 VDS 1.2kV, 5.0 mΩ All-Silicon Carbide Esw ... · 6 00122. - Typical Performance 8 10 12 14 16 18 20 Switching Loss (mJ) ETotal Conditions: TJ= 25 °C VDD= 600 V RG(ext)=

6 CAS300M12BM2,Rev. -

Typical Performance

8

10

12

14

16

18

20

Switc

hing

Loss

(mJ)

ETotal

Conditions:TJ = 25 °CVDD = 600 VRG(ext) = 2.5 ΩVGS = -5/+20 VL = 77 μH

0

2

4

6

0 50 100 150 200 250 300 350 400 450

Switc

hing

Loss

(mJ)

Drain to Source Current, IDS (A)

EOff

EOn

Figure19.InductiveSwitchingEnergyvs.DrainCurrentForVDS=600V,RG=2.5Ω

Figure20.InductiveSwitchingEnergyvs.DrainCurrentForVDS=800V,RG=2.5Ω

40

60

80

100

120

Switc

hing

Loss

(mJ)

EOn

ETotal

Conditions:TJ = 25 °CVDD = 600 VIDS =300 AVGS = -5/+20 VL = 77 μH

0

20

40

0 5 10 15 20 25 30 35 40 45

Switc

hing

Loss

(mJ)

External Gate Resistor RG(ext) (Ohms)

EOff

10

15

20

25

30

Switc

hing

Loss

(mJ)

ETotal

Conditions:TJ = 25 °CVDD = 800 VRG(ext) = 2.5 ΩVGS = -5/+20 VL = 77 μH

0

5

10

0 50 100 150 200 250 300 350 400 450

Switc

hing

Loss

(mJ)

Drain to Source Current, IDS (A)

EOff

EOn

6

8

10

12

14Sw

itchi

ng Lo

ss (m

J)

EOff

EOn

ETotal

Conditions:

0

2

4

0 25 50 75 100 125 150 175

Switc

hing

Loss

(mJ)

Junction Temperature, TJ (°C)

Conditions:VDD = 600 VRG(ext) = 2.5 ΩIDS =300 AVGS = -5/+20 VL = 77 μH

Figure22.InductiveSwitchingEnergyvs.TemperatureFigure21.InductiveSwitchingEnergyvs.RG(ext)

600

800

1000

1200

1400

1600

1800

Max

imum

Diss

ipat

ed P

ower

, Pto

t(W

)

Conditions:TJ ≤ 150 °C

0

200

400

600

-25 0 25 50 75 100 125

Max

imum

Diss

ipat

ed P

ower

, P

Case Temperature, TC (°C)

150

200

250

300

350

400

450

Sour

ce C

ontin

ous C

urre

nt, I

DS (D

C)(A

)

Conditions:TJ ≤ 150 °C

0

50

100

150

-25 0 25 50 75 100 125

Drai

n-So

urce

Con

tinou

s Cur

rent

, I

Case Temperature, TC (°C)

Figure23.MaximumPowerDissipation(MOSFET)Derat-ingvsCaseTemperature

Figure24.ContinousDrainCurrentDeratingvsCaseTemperature

Page 7: CAS300M12BM2 VDS 1.2kV, 5.0 mΩ All-Silicon Carbide Esw ... · 6 00122. - Typical Performance 8 10 12 14 16 18 20 Switching Loss (mJ) ETotal Conditions: TJ= 25 °C VDD= 600 V RG(ext)=

7 CAS300M12BM2,Rev. -

Typical Performance

Figure25.Timingvs.RG(ext)Figure26.ContinousDrainCurrentDeratingvsCase

Temperature

1E-3

10E-3

100E-3

Junc

tion

To C

ase

Impe

danc

e, Z

thJC

(o C/W

) 0.5

0.30.1

0.05

0.02

0.01

SinglePulse

10E-6

100E-6

1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1

Junc

tion

To C

ase

Impe

danc

e, Z

Time, tp (s)

0.01

1.00

10.00

100.00

1000.00

Sour

ce C

urre

nt, I

DS(A

)

100 µs

1 ms

1 µs

Limited by RDS On

100 ms

0.01

0.10

0.1 1 10 100 1000

Drai

n-So

urce

Cur

rent

, I

Drain-Source Voltage, VDS (V)

Conditions:TC = 25 °CD = 0, Parameter: tp

1E-3

10E-3

100E-3

Junc

tion

To C

ase

Impe

danc

e, Z

thJC

(o C/W

) 0.5

0.30.1

0.05

0.02

0.01SinglePulse

10E-6

100E-6

1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1

Junc

tion

To C

ase

Impe

danc

e, Z

Time, tp (s)

Figure27.MOSFETJunctiontoCaseThermalImpedance Figure28.DiodeJunctiontoCaseThermalImpedance

400

600

800

1000

1200

Tim

e (n

s)

Conditions:TJ = 25 °CVDD = 600 VIDS = 300 AVGS = -5/+20 V

td (off)

td (on)

0

200

400

0 5 10 15 20 25 30 35 40External Gate Resistor, RG(ext) (Ohms)

tf

tr

Page 8: CAS300M12BM2 VDS 1.2kV, 5.0 mΩ All-Silicon Carbide Esw ... · 6 00122. - Typical Performance 8 10 12 14 16 18 20 Switching Loss (mJ) ETotal Conditions: TJ= 25 °C VDD= 600 V RG(ext)=

8 CAS300M12BM2,Rev. -

Schematic

Package Dimensions (mm)

Page 9: CAS300M12BM2 VDS 1.2kV, 5.0 mΩ All-Silicon Carbide Esw ... · 6 00122. - Typical Performance 8 10 12 14 16 18 20 Switching Loss (mJ) ETotal Conditions: TJ= 25 °C VDD= 600 V RG(ext)=

99 CAS300M12BM2 Rev. -

Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

Cree, Inc.4600 Silicon Drive

Durham, NC 27703USA Tel: +1.919.313.5300

Fax: +1.919.313.5451www.cree.com/power

• RoHSCompliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.

• REAChCompliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.

• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiacdefibrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrolsystems,airtrafficcontrolsystems.

Notes