cas300m12bm2 vds 1.2kv, 5.0 mΩ all-silicon carbide esw ... · 6 00122. - typical performance 8 10...
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1Subject to change without notice.www.cree.com
CAS300M12BM21.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge ModuleC2M MOSFET and Z-RecTM Diode
Dat
ash
eet:
CA
S3
00
M1
2B
M2
,Rev
. -
Features• UltraLowLoss• High-FrequencyOperation• ZeroReverseRecoveryCurrentfromDiode• ZeroTurn-offTailCurrentfromMOSFET• Normally-off,Fail-safeDeviceOperation• EaseofParalleling• CopperBaseplateandAluminumNitrideInsulator
System Benefits• EnablesCompactandLightweightSystems• HighEfficiencyOperation• MitigatesOver-voltageProtection• ReducedThermalRequirements• ReducedSystemCost
Applications• InductionHeating• MotorDrives• SolarandWindInverters• UPSandSMPS• Traction
Package 62mm x 106mm x 30mm
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol Parameter Value Unit Test Conditions Notes
VDSmax Drain-SourceVoltage 1.2 kV
VGSmax Gate-SourceVoltage -10/+25 V AbsoluteMaximumvalues
VGSop Gate-SourceVoltage -5/20 V RecommendedOperationalValues
ID ContinuousDrainCurrent404
AVGS=20V,TC=25˚C
Fig.24285 VGS=20V,TC=90˚C
ID(pulse) PulsedDrainCurrent 1500 A PulsewidthtP=200μsRepetitionratelimitedbyTjmax,TC=25˚C
TJmax JunctionTemperature 150 ˚C
TC,TSTG CaseandStorageTemperatureRange -40to+125 ˚C
Visol CaseIsolationVoltage 4.0 kV AC,50Hz,1min
LStray StrayInductance 14 nH Measuredbetweenterminals2and3
PD PowerDissipation 1660 W TC=25˚C,TJ=150˚C Fig.23
Part Number Package Marking
CAS300M12BM2 Half-BridgeModule CAS300M12BM2
VDS 1.2 kVEsw, Total @ 300A 12.0 mJRDS(on) 5.0 mΩ
2 CAS300M12BM2,Rev. -
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-SourceBreakdownVoltage 1.2 kV VGS,=0V,ID=1mA
VGS(th) GateThresholdVoltage 1.8 2.3 V VDS=10V,ID=15mA Fig7
IDSS ZeroGateVoltageDrainCurrent500 2000 μA VDS=1.2kV,VGS=0V
1000 VDS=1.2kV,VGS=0V,TJ=150˚C
IGSS Gate-SourceLeakageCurrent 1 100 nA VGS=20V,VDS=0V
RDS(on) OnStateResistance5.0 5.7
mΩVGS=20V,IDS=300A
Fig.4,5,68.6 9.8 VGS=20V,IDS=300A,
TJ=150˚C
gfs Transconductance94.8
SVDS=20V,IDS=300A
Fig.893.3 VDS=20V,ID=300A,TJ=150˚C
Ciss InputCapacitance 11.7
nF VDS=600V,f=200kHz,VAC=25mV
Fig.16,17
Coss OutputCapacitance 2.55
Crss ReverseTransferCapacitance 0.07
Eon Turn-OnSwitchingEnergy 6.05 mJ VDD=600V,VGS=-5V/+20VID=300A,RG(ext)=2.5ΩNote:IEC60747-8-4Definitions
Fig.19,20EOff Turn-OffSwitchingEnergy
5.95 mJ
RG(int) InternalGateResistance 3.0 Ω f=200kHz,VAC=25mV
QGS Gate-SourceCharge 166
nC VDD=800V,VGS=-5V/+20V,ID=300A,PerJEDEC24pg27
Fig.15QGD Gate-DrainCharge 475
QG TotalGateCharge 1025
td(on) Turn-ondelaytime 76 ns VDD=600V,VGS=-5/+20V,ID=300A,RG(ext)=2.5Ω,TimingrelativetoVDSNote:IEC60747-8-4,pg83Inductiveload
Fig.25tr RiseTime 68 ns
td(off) Turn-offdelaytime 168 ns
tf FallTime 43 ns
Free-Wheeling SiC Schottky Diode CharacteristicsSymbol Parameter Min. Typ. Max. Unit Test Conditions Note
VSD DiodeForwardVoltage1.7 2.0
VIF=300A,VGS=0 Fig.9,
10,112.2 2.5 IF=300A,TJ=150˚C,VGS=0
QC TotalCapacitiveCharge 3.2 μC
Note:Thereverserecoveryispurelycapacitive
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
RthJCM ThermalResistanceJuction-to-CaseforMOSFET 0.070 0.075˚C/W
Tc=90˚C,PD=150W Fig.27,28RthJCD ThermalResistanceJuction-to-CaseforDiode 0.073 0.076 Tc=90˚C,PD=130W
Additional Module Data
Symbol Parameter Max. Unit Test Condtion
W Weight 300 g
M MountingTorque 5 Nm Toheatsinkandterminals
ClearanceDistance 12 mm Terminaltoterminal
CreepageDistance30 mm Terminaltoterminal
40 mm Terminaltobaseplate
3 CAS300M12BM2,Rev. -
Typical Performance
200
300
400
500
600
-Sou
rce
Curr
ent,
I DS(A
)
VGS = 20 V
VGS = 18 V
VGS = 10 V
VGS = 12 V
VGS = 14 VVGS = 16 V
0
100
200
0 1 2 3 4 5 6 7 8
Drai
n-So
urce
Cur
rent
, I
Drain-Source Voltage VDS (V)
Conditions:TJ = -40°Ctp = 200 µs
200
300
400
500
600
-Sou
rce
Curr
ent,
I DS(A
)
VGS = 20 V
VGS = 18 V
VGS = 10 V
VGS = 12 V
VGS = 14 V
VGS = 16 V
0
100
200
0 1 2 3 4 5 6 7 8
Drai
n-So
urce
Cur
rent
, I
Drain-Source Voltage VDS (V)
Conditions:TJ = 25°Ctp = 200 µs
Figure2.TypicalOutputCharacteristicsTJ=25˚CFigure1.TypicalOutputCharacteristicsTJ=-40˚C
0.8
1.0
1.2
1.4
1.6
1.8
2.0O
n Re
sista
nce,
RDS
On
(p.u
.)Conditions:IDS = 300 AVGS = 20 Vtp = 200 µs
0.0
0.2
0.4
0.6
-50 -25 0 25 50 75 100 125 150
On
Resis
tanc
e, R
Junction Temperature, TJ (°C)
200
300
400
500
600
-Sou
rce
Curr
ent,
I DS(A
)
VGS = 20 V
VGS = 18 V
VGS = 10 V
VGS = 12 V
VGS = 14 V
VGS = 16 V
0
100
200
0 1 2 3 4 5 6 7 8
Drai
n-So
urce
Cur
rent
, I
Drain-Source Voltage VDS (V)
Conditions:TJ = 150°Ctp = 200 µs
Figure6.TypicalOn-Resistancevs.GateVoltage
Figure4.NormalizedOn-Resistancevs.Temperature
4
6
8
10
12
On
Resis
tanc
e, R
DS O
n(m
Ω)
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 VVGS = 12 V
0
2
4
-50 -25 0 25 50 75 100 125 150
On
Resis
tanc
e, R
Junction Temperature, TJ (°C)
Conditions:IDS = 300 Atp = 200 µs
0
2
4
6
8
10
12
14
16
18
20
10 12 14 16 18 20
On-R
esist
ance
, RDS
ON
(mΩ)
Gate-Source Voltage, VGS (V)
Tj = - 40 °C
Tj = 25 °C
Tj = 150 °C
Conditions:IDS = 300 Atp = 200 µs
Figure5.TypicalOn-Resistancevs.TemperatureforVariousGate-SourceVoltage
Figure3.TypicalOutputCharacteristicsTJ=150˚C
4 CAS300M12BM2,Rev. -
-300
-200
-100
0-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
-Sou
rce
Curr
ent,
I DS(A
)
VGS = -2 V
V = -5 V
VGS = 0 V
-600
-500
-400
Drai
n-So
urce
Cur
rent
, I
Drain-Source Voltage VDS (V)
Conditions:TJ = -40 °Ctp = 200 µs
VGS = -5 V
Typical Performance
1.0
1.5
2.0
2.5
3.0
Thre
shol
d Vo
ltage
, Vth
(V)
ConditionsVDS = 10 VIDS = 0.5 mA
ConditionsVDS = 10 VIDS = 15 mA
Typ
0.0
0.5
1.0
-50 -25 0 25 50 75 100 125 150
Thre
shol
d Vo
ltage
, V
Junction Temperature TJ (°C)
200
300
400
500
Sour
ce C
urre
nt, I
DS(A
)
Conditions:VDS = 20 Vtp < 200 µs
TJ = 150 °C
TJ = -40 °C
TJ = 25 °C
0
100
0 2 4 6 8 10 12 14
Drai
n-So
urce
Cur
rent
, I
Gate-Source Voltage, VGS (V)
TJ = -40 °C
-300
-200
-100
0-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
-Sou
rce
Curr
ent,
I DS(A
)
-600
-500
-400Drai
n-So
urce
Cur
rent
, I
Drain-Source Voltage VDS (V)
Conditions:TJ = 25°Ctp = 200 µs
VGS = -2 V
VGS = -5 V VGS = 0 V
Figure8.TransferCharacteristicforVariousJunctionTemperatures
Figure10.DiodeCharacteristicat25˚CFigure9.DiodeCharacteristicat-40˚C
-300
-200
-100
0-4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
-Sou
rce
Curr
ent,
I DS(A
)
-600
-500
-400Drai
n-So
urce
Cur
rent
, I
Drain-Source Voltage VDS (V)
Conditions:TJ = 150°Ctp = 200 µs
VGS = -2 V
VGS = -5 VVGS = 0 V
-300
-200
-100
0-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
-Sou
rce
Curr
ent,
I DS(A
)
VGS = 10 V
VGS = 5 V
V = 20 V
VGS = 15 V
VGS = 0 V
-600
-500
-400Drai
n-So
urce
Cur
rent
, I
Drain-Source Voltage VDS (V)
Conditions:TJ = 25 °Ctp = 200 µs
Conditions:TJ = -40 °Ctp = 200 µs
VGS = 20 V
Figure12.3rdQuadrantCharacteristicat-40˚C
Figure7.ThresholdVoltagevs.Temperature
Figure11.DiodeCharacteristicat150˚C
5 CAS300M12BM2,Rev. -
10
15
20
25
Sour
ce V
olta
ge, V
GS(V
)
Conditions:TJ = 25 °CIDS = 300 AVDS = 1000 V
-5
0
5
0 200 400 600 800 1000 1200
Gate
-Sou
rce
Volta
ge, V
Gate Charge (nC)
Typical Performance
-300
-200
-100
0-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
-Sou
rce
Curr
ent,
I DS(A
)
VGS = 10 V
VGS = 5 V
VGS = 15 V
VGS = 0 V
-600
-500
-400Drai
n-So
urce
Cur
rent
, I
Drain-Source Voltage VDS (V)
Conditions:TJ = 25 °Ctp = 200 µs
Conditions:TJ = 25°Ctp = 200 µs
VGS = 20 V
-150
-100
-50
0-3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0
-Sou
rce
Curr
ent,
I DS(A
)
VGS = 10 V
VGS = 5 V
V = 20 V
VGS = 15 V
VGS = 0 V
-300
-250
-200Drai
n-So
urce
Cur
rent
, I
Drain-Source Voltage VDS (V)
Conditions:TJ = 25 °Ctp = 200 µs
Conditions:TJ = 150°Ctp = 200 µs
VGS = 20 V
Figure14.3rdQuadrantCharacteristicat150˚C
1
10
100Ca
pacit
ance
(nF)
Ciss
Coss
Conditions:TJ = 25 °CVAC = 25 mVf = 200 kHz
0.01
0.1
0 50 100 150 200
Capa
citan
ce (n
F)
Drain-Source Voltage, VDS (V)
Crss
Figure13.3rdQuadrantCharacteristicat25˚C
1
10
100
Capa
citan
ce (n
F)
Ciss
Coss
Conditions:TJ = 25 °CVAC = 25 mVf = 200 kHz
0.01
0.1
0 200 400 600 800 1000
Capa
citan
ce (n
F)
Drain-Source Voltage, VDS (V)
Crss
0.6
0.8
1
1.2
1.4
1.6
Stor
ed E
nerg
y, E OS
S(m
J)
0
0.2
0.4
0 200 400 600 800 1000 1200
Stor
ed E
nerg
y, E
Drain to Source Voltage, VDS (V)
Figure18.TypicalOutputCapacitorStoredEnergy
Figure15.TypicalGateChargeCharacteristics Figure16.TypicalCapacitancesvs.Drain-SourceVoltage(0-200V)
Figure17.TypicalCapacitancesvs.Drain-SourceVoltage(0-1kV)
6 CAS300M12BM2,Rev. -
Typical Performance
8
10
12
14
16
18
20
Switc
hing
Loss
(mJ)
ETotal
Conditions:TJ = 25 °CVDD = 600 VRG(ext) = 2.5 ΩVGS = -5/+20 VL = 77 μH
0
2
4
6
0 50 100 150 200 250 300 350 400 450
Switc
hing
Loss
(mJ)
Drain to Source Current, IDS (A)
EOff
EOn
Figure19.InductiveSwitchingEnergyvs.DrainCurrentForVDS=600V,RG=2.5Ω
Figure20.InductiveSwitchingEnergyvs.DrainCurrentForVDS=800V,RG=2.5Ω
40
60
80
100
120
Switc
hing
Loss
(mJ)
EOn
ETotal
Conditions:TJ = 25 °CVDD = 600 VIDS =300 AVGS = -5/+20 VL = 77 μH
0
20
40
0 5 10 15 20 25 30 35 40 45
Switc
hing
Loss
(mJ)
External Gate Resistor RG(ext) (Ohms)
EOff
10
15
20
25
30
Switc
hing
Loss
(mJ)
ETotal
Conditions:TJ = 25 °CVDD = 800 VRG(ext) = 2.5 ΩVGS = -5/+20 VL = 77 μH
0
5
10
0 50 100 150 200 250 300 350 400 450
Switc
hing
Loss
(mJ)
Drain to Source Current, IDS (A)
EOff
EOn
6
8
10
12
14Sw
itchi
ng Lo
ss (m
J)
EOff
EOn
ETotal
Conditions:
0
2
4
0 25 50 75 100 125 150 175
Switc
hing
Loss
(mJ)
Junction Temperature, TJ (°C)
Conditions:VDD = 600 VRG(ext) = 2.5 ΩIDS =300 AVGS = -5/+20 VL = 77 μH
Figure22.InductiveSwitchingEnergyvs.TemperatureFigure21.InductiveSwitchingEnergyvs.RG(ext)
600
800
1000
1200
1400
1600
1800
Max
imum
Diss
ipat
ed P
ower
, Pto
t(W
)
Conditions:TJ ≤ 150 °C
0
200
400
600
-25 0 25 50 75 100 125
Max
imum
Diss
ipat
ed P
ower
, P
Case Temperature, TC (°C)
150
200
250
300
350
400
450
Sour
ce C
ontin
ous C
urre
nt, I
DS (D
C)(A
)
Conditions:TJ ≤ 150 °C
0
50
100
150
-25 0 25 50 75 100 125
Drai
n-So
urce
Con
tinou
s Cur
rent
, I
Case Temperature, TC (°C)
Figure23.MaximumPowerDissipation(MOSFET)Derat-ingvsCaseTemperature
Figure24.ContinousDrainCurrentDeratingvsCaseTemperature
7 CAS300M12BM2,Rev. -
Typical Performance
Figure25.Timingvs.RG(ext)Figure26.ContinousDrainCurrentDeratingvsCase
Temperature
1E-3
10E-3
100E-3
Junc
tion
To C
ase
Impe
danc
e, Z
thJC
(o C/W
) 0.5
0.30.1
0.05
0.02
0.01
SinglePulse
10E-6
100E-6
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junc
tion
To C
ase
Impe
danc
e, Z
Time, tp (s)
0.01
1.00
10.00
100.00
1000.00
Sour
ce C
urre
nt, I
DS(A
)
100 µs
1 ms
1 µs
Limited by RDS On
100 ms
0.01
0.10
0.1 1 10 100 1000
Drai
n-So
urce
Cur
rent
, I
Drain-Source Voltage, VDS (V)
Conditions:TC = 25 °CD = 0, Parameter: tp
1E-3
10E-3
100E-3
Junc
tion
To C
ase
Impe
danc
e, Z
thJC
(o C/W
) 0.5
0.30.1
0.05
0.02
0.01SinglePulse
10E-6
100E-6
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
Junc
tion
To C
ase
Impe
danc
e, Z
Time, tp (s)
Figure27.MOSFETJunctiontoCaseThermalImpedance Figure28.DiodeJunctiontoCaseThermalImpedance
400
600
800
1000
1200
Tim
e (n
s)
Conditions:TJ = 25 °CVDD = 600 VIDS = 300 AVGS = -5/+20 V
td (off)
td (on)
0
200
400
0 5 10 15 20 25 30 35 40External Gate Resistor, RG(ext) (Ohms)
tf
tr
8 CAS300M12BM2,Rev. -
Schematic
Package Dimensions (mm)
99 CAS300M12BM2 Rev. -
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• REAChCompliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiacdefibrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrolsystems,airtrafficcontrolsystems.
Notes