ce(sat) series fifth generation · 4 igw30n65l5 low vce(sat) series fifth generation rev. 2.1,...

IGBTLow�VCE(sat)�IGBT�in�TRENCHSTOPTM��5�technology

IGW30N65L5650V�IGBT�Low�VCE(sat)�series�fifth�generation

Data�sheet

Industrial�Power�Control

2

IGW30N65L5Low�VCE(sat)�series�fifth�generation

Rev.�2.1,��2014-12-10

Low�VCE(sat)�IGBT�in�TRENCHSTOPTM��5�technology�Features�and�Benefits:

Low�VCE(sat)�L5�technology�offering•�Very�low�collector-emitter�saturation�voltage�VCEsat•�Best-in-Class�tradeoff�between�conduction�and�switching�losses•�650V�breakdown�voltage•�Low�gate�charge�QG•�Maximum�junction�temperature�175°C•�Qualified�according�to�JEDEC�for�target�applications•�Pb-free�lead�plating•�RoHS�compliant•�Complete�product�spectrum�and�PSpice�models:http://www.infineon.com/igbt/

Applications:

•�Uninterruptible�power�supplies•�Solar�photovoltaic�inverters•�Welding�machines

G

C

E

GC

E

Key�Performance�and�Package�ParametersType VCE IC VCEsat,�Tvj=25°C Tvjmax Marking PackageIGW30N65L5 650V 30A 1.05V 175°C G30EL5 PG-TO247-3

3


Rev.�2.1,��2014-12-10

Table�of�Contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

4


Rev.�2.1,��2014-12-10

Maximum�RatingsFor�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.

Parameter Symbol Value UnitCollector-emitter�voltage,�Tvj�≥�25°C VCE 650 VDC�collector�current,�limited�by�TvjmaxTC�=�25°C�value�limited�by�bondwireTC�=�100°C

IC 85.062.0

A

Pulsed�collector�current,�tp�limited�by�Tvjmax1) ICpuls 120.0 ATurn off safe operating areaVCE�≤�650V,�Tvj�≤�175°C,�tp�=�1µs1) - 120.0 A

Gate-emitter voltageTransient�Gate-emitter�voltage�(tp�≤�10µs,�D�

5


Rev.�2.1,��2014-12-10

Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

Dynamic�Characteristic

Input capacitance Cies - 4900 -Output capacitance Coes - 42 -Reverse transfer capacitance Cres - 18 -

VCE�=�25V,�VGE�=�0V,�f�=�1MHz pF

Gate charge QG VCC�=�520V,�IC�=�30.0A,VGE�=�15V - 168.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


IGBT�Characteristic,�at�Tvj�=�25°CTurn-on delay time td(on) - 33 - nsRise time tr - 11 - nsTurn-off delay time td(off) - 308 - nsFall time tf - 51 - nsTurn-on energy Eon - 0.47 - mJTurn-off energy Eoff - 1.35 - mJTotal switching energy Ets - 1.82 - mJ

Tvj�=�25°C,VCC�=�400V,�IC�=�30.0A,VGE�=�0.0/15.0V,RG(on)�=�10.0Ω,�RG(off)�=�10.0Ω,Lσ�=�60nH,�Cσ�=�30pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode reverse recovery. Diode: IDW30E65D1.

Switching�Characteristic,�Inductive�Load

Valuemin. typ. max.


IGBT�Characteristic,�at�Tvj�=�150°CTurn-on delay time td(on) - 31 - nsRise time tr - 13 - nsTurn-off delay time td(off) - 370 - nsFall time tf - 150 - nsTurn-on energy Eon - 0.68 - mJTurn-off energy Eoff - 2.18 - mJTotal switching energy Ets - 2.86 - mJ

Tvj�=�150°C,VCC�=�400V,�IC�=�30.0A,VGE�=�0.0/15.0V,RG(on)�=�10.0Ω,�RG(off)�=�10.0Ω,Lσ�=�60nH,�Cσ�=�30pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode reverse recovery. Diode: IDW30E65D1.

6


Rev.�2.1,��2014-12-10

Figure 1. Forward�bias�safe�operating�area(D=0,�TC=25°C,�Tvj≤175°C,�VGE=15V,�tp=1µs,ICmax�defined�by�design�-�not�subject�toproduction test)

VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]

IC,�C

OLLECTO

R�CURRENT�[A]

1 10 100 10000.1

1

10

100

not for linear use

Figure 2. Power�dissipation�as�a�function�of�casetemperature(Tvj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

Ptot ,�POWER�DISSIPATION�[W

]

25 50 75 100 125 150 1750

25

50

75

100

125

150

175

200

225

250

Figure 3. Collector�current�as�a�function�of�casetemperature(VGE≥15V,�Tvj≤175°C)

TC,�CASE�TEMPERATURE�[°C]

IC,�C

OLLECTO

R�CURRENT�[A]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

90

Figure 4. Typical�output�characteristic(Tvj=25°C)


IC,�C

OLLECTO

R�CURRENT�[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60

70

80

90VGE = 20V

18V

15V

12V

10V

8V

7V

6V

7


Rev.�2.1,��2014-12-10

Figure 5. Typical�output�characteristic(Tvj=175°C)


IC,�C

OLLECTO

R�CURRENT�[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

50

60

70

80

90VGE = 20V

18V

15V

12V

10V

8V

7V

6V

5V

Figure 6. Typical�transfer�characteristic(VCE=20V)

VGE,�GATE-EMITTER�VOLTAGE�[V]

IC,�C

OLLECTO

R�CURRENT�[A]

2 3 4 5 6 7 8 90

10

20

30

40

50

60

70

80

90Tvj�=�25°CTvj�=�150°C

Figure 7. Typical�collector-emitter�saturation�voltage�asa�function�of�junction�temperature(VGE=15V)

Tvj,�JUNCTION�TEMPERATURE�[°C]

VCEsat ,�COLLECTO

R-EMITTE

R�SATU

RATION�[V

]

25 50 75 100 125 150 1750.500

0.625

0.750

0.875

1.000

1.125

1.250IC�=�7.5AIC�=�15AIC�=�30A

Figure 8. Typical�switching�times�as�a�function�ofcollector�current(inductive�load,�Tvj=150°C,�VCE=400V,VGE=0/15V,�RG(on)=10Ω,�RG(off)=10Ω,�dynamictest circuit in Figure E)

IC,�COLLECTOR�CURRENT�[A]

t,�SWITCHING�TIMES�[ns]

0 10 20 30 40 50 60 70 80 901

10

100

1000

td(off)tftd(on)tr

8


Rev.�2.1,��2014-12-10

Figure 9. Typical�switching�times�as�a�function�of�gateresistance(inductive�load,�Tvj=150°C,�VCE=400V,VGE=0/15V,�IC=30A,�dynamic�test�circuit�inFigure E)

RG,�GATE�RESISTANCE�[Ω]


0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.01

10

100

1000

td(off)tftd(on)tr

Figure 10. Typical�switching�times�as�a�function�ofjunction�temperature(inductive�load,�VCE=400V,�VGE=0/15V,IC=30A,�RG(on)=10Ω,�RG(off)=10Ω,�dynamictest circuit in Figure E)



25 50 75 100 125 150 1751

10

100

1000td(off)tftd(on)tr

Figure 11. Gate-emitter�threshold�voltage�as�a�functionof�junction�temperature(IC=0.4mA)


VGE(th

) ,�GATE

-EMITTE

R�THRESHOLD

�VOLT

AGE�[V

]

25 50 75 100 125 150 1751

2

3

4

5

6

7typ.min.max.

Figure 12. Typical�switching�energy�losses�as�afunction�of�collector�current(inductive�load,�Tvj=150°C,�VCE=400V,VGE=0/15V,�RG(on)=10Ω,�RG(off)=10Ω,dynamic test circuit in Figure E)

IC,�COLLECTOR�CURRENT�[A]

E,�S

WITCHING�ENERGY�LOSSES�[m

J]

0 10 20 30 40 50 60 70 80 900

1

2

3

4

5

6

7EoffEonEts

9


Rev.�2.1,��2014-12-10

Figure 13. Typical�switching�energy�losses�as�afunction�of�gate�resistance(inductive�load,�Tvj=150°C,�VCE=400V,VGE=0/15V,�IC=30A,�dynamic�test�circuit�inFigure E)

RG,�GATE�RESISTANCE�[Ω]

E,�S


J]

0 10 20 30 40 50 60 700.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5EoffEonEts

Figure 14. Typical�switching�energy�losses�as�afunction�of�junction�temperature(inductive�load,�VCE=400V,�VGE=0/15V,IC=30A,�RG(on)=10Ω,�RG(off)=10Ω,�dynamictest circuit in Figure E)


E,�S


J]

25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5EoffEonEts

Figure 15. Typical�switching�energy�losses�as�afunction�of�collector�emitter�voltage(inductive�load,�Tvj=150°C,�VGE=0/15V,IC=30A,�RG(on)=10Ω,�RG(off)=10Ω,�dynamictest circuit in Figure E)


E,�S


J]

200 250 300 350 400 450 5000.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6EoffEonEts

Figure 16. Typical�gate�charge(IC=30A)

QG,�GATE�CHARGE�[nC]

VGE,�G

ATE

-EMITTE

R�VOLT

AGE�[V

]

0 20 40 60 80 100 120 140 160 1800

2

4

6

8

10

12

14

16VCC�=�130VVCC�=�520V

10


Rev.�2.1,��2014-12-10

Figure 17. Typical�capacitance�as�a�function�ofcollector-emitter�voltage(VGE=0V,�f=1MHz)


C,�C

APACITANCE�[pF]

0 5 10 15 20 25 3010

100

1000

1E+4CiesCoesCres

Figure 18. IGBT�transient�thermal�impedance(D=tp/T)

tp,�PULSE�WIDTH�[s]

Zth(j -c

) ,�TR

ANSIENT�TH

ERMAL�IMPEDANCE�[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.10.01

0.1

1

D = 0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.0107022.0E-5

20.1550562.2E-4

30.1729372.0E-3

40.2901730.011473

50.0271360.092564

62.2E-31.827121

11


Rev.�2.1,��2014-12-10

PG-TO247-3

12


Rev.�2.1,��2014-12-10

t

a b

td(off)

tf trtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t4

2% IC

10% VGE

2% VCE

t2 t3

E

t

t

V I toff

= x x d

1

2

CE C E

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

13

IGW30N65L5

Low VCE(sat) series fifth generation

Rev. 2.1, 2014-12-10

Revision History

IGW30N65L5

Revision: 2014-12-10, Rev. 2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2014-12-10 Final data sheet

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Published byInfineon Technologies AG81726 Munich, Germany81726 München, Germany© 2014 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding theapplication of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types inquestion, please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systemsand/or automotive, aviation and aerospace applications or systems only with the express written approval of InfineonTechnologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Lifesupport devices or systems are intended to be implanted in the human body or to support and/or maintain and sustainand/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may beendangered.

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Table of ContentsMaximum RatingsThermal ResistanceElectrical Characteristics (Static)Electrical Characteristics (Dynamic)Switching Characteristic, Inductive Load, at Tj lowDiode Characteristic, at Tj lowSwitching Characteristic, Inductive Load, at Tj highDiode Characteristic, at Tj highChartsChartsChartsChartsChartsPackage DrawingTesting ConditionsRevision HistoryDisclaimer

ce(sat) series fifth generation · 4 igw30n65l5 low vce(sat) series fifth generation rev. 2.1,...

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