chap 5. mos fundamentalsweng/courses/ic_2007/project_… · mos device physics and designs chap. 5...
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![Page 1: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/1.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
1
Chap 5. MOS Fundamentals
u Ideal Structureu Energy Band Diagramu Bias Effectsu Capacitance-Voltage Characteristicsu Current-Voltage Characteristicsu Nonideal MOS u Gate Oxide Integrity
![Page 2: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/2.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
2
Ideal Structure Definition
u MOS Capacitor
![Page 3: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/3.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
3
Energy Band Diagram
u Individual energy band diagram
u Ideal Structure energy Band Diagram
![Page 4: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/4.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
4
Block Charge Diagram
![Page 5: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/5.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
5
Bias Effect
Ideal N-MOS Capacitor
![Page 6: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/6.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
6
Bias Effect
Ideal P-MOS Capacitor
![Page 7: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/7.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
7
C-V Characteristics
High- and low-frequency C-V characteristics of a pMOS capacitor
![Page 8: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/8.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
8
AC Charge fluctuations inside an n-MOS C
VG < 0, Accumulation VG ≥ 0, Depletion
VG > 0, Inversion
![Page 9: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/9.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
9
Oxide Thickness Effects
![Page 10: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/10.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
10
Sweep Frequency Effects
![Page 11: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/11.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
11
Nonideal MOS
u Metal-Semiconductor Workfunction Difference u Oxide Charge
– Mobile Ions– Trapped Oxide Charge– Fixed Charge– Interfacial traps
![Page 12: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/12.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
12
Workfunction Difference
u Metal-Semiconductor workfunction difference induces a built-in potential (band bending) in MOS-C even when VG = 0.
u Vbi = φMS = φM - φS
![Page 13: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/13.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
13
Work function as a function of doping conc. of semiconductor
![Page 14: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/14.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
14
Barrier Height of Various Metals on MOS-Cs
![Page 15: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/15.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
15
Oxide Charges
Four Major Charge/Traps in SiO2Mobile IonsTrapped Oxide ChargeFixed ChargeInterfacial traps
Arbitrary distribution of oxide charges
![Page 16: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/16.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
16
Mobile Ions
u Arise from “Alkali-ion” contamination, such as Na+ and K+.u C-V curve shifts with bias-temperature.
∫−=
∆
ox
ooG dxxx
kV
0)(ion
1ions
mobileρ
ε
![Page 17: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/17.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
17
Mobile Ions
u Two hypothetical ionic charge distributions involving the same total number of ions situated near the metal and near the semiconductor.
u Positive mobile ions within the oxide under (+) and (-) bias-temperature stressing.
u Specail fabrication procedures needed, such as RCA clean, Phosphorus or chlorine stabilization, and extremely clean environment.
![Page 18: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/18.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
18
MOS stabilization procedures
![Page 19: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/19.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
19
Fixed Charge
o
FG C
QV −=
∆
charge
fixedDue to excess ionic silicon that has broken away the silicon proper and is waiting to react in the vicinity of the Si-SiO2 interface when the oxidation process is abruptly terminated.
![Page 20: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/20.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
20
Effects of oxidation process on fixed charge
![Page 21: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/21.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
21
Interfacial Traps
u Interfacial traps are allowed energy states in which electrons are localized in the vicinity of Si-SiO2 interface. ⇒C-V curve distortion
![Page 22: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/22.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
22
Interfacial Traps
![Page 23: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/23.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
23
Physical Model of Interfacial traps
![Page 24: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/24.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
24
Energy Distribution of Interface states
Annihilation of interface states by postmetallization H2annealing
![Page 25: Chap 5. MOS Fundamentalsweng/courses/IC_2007/PROJECT_… · MOS Device Physics and Designs Chap. 5 Instructor: Pei-Wen Li Dept. of E. E. NCU 19 Fixed Charge o F G C Q V −= ∆ charge](https://reader034.vdocument.in/reader034/viewer/2022051806/5ffdd442bf4d6536eb420d70/html5/thumbnails/25.jpg)
MOS Device Physics and Designs Chap. 5
Instructor: Pei-Wen LiDept. of E. E. NCU
25
Induced Charge
u Radiation effects: a major concern of space and military.
∆VG Summary ( ) ( )o
SIT
o
MM
o
FMSGGG C
QC
QCQVVV φγ
φφ
−−−=−=∆S same
'