chapter 3: noise sources massoud pedram dept. of ee university of southern california

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Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

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Page 1: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

Chapter 3: Noise SourcesChapter 3: Noise Sources

Massoud PedramDept. of EE

University of Southern California

Page 2: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Background Noise in Digital Systems

Capacitive Crosstalk Inductance Effects

Ground Bounce IR Drop Skin Effect Electromigration EMI

Outline

Page 3: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

On and Off Chip Clock Frequencies

Page 4: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Sources of Noise

Page 5: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Noise in Digital Systems Noise

Signals may be corrupted due to many factors:

Power supply noise Crosstalk Inter-symbol interference Real noise (thermal and

shot) Parameter variation

Independent random variables

Power supply noise Inductance and resistance

of supply network cause voltage drops

Spatial variation in the power distribution network

Temporal variation in the power supply voltage

Crosstalk One signal interfering

with another signal Capacitive cross talk

between RC lines on a chip

Floating Driven

Coupling between LC transmission lines

Near end Far end

Page 6: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Noise Sources

V K V VN N s NI

The first component represents those noise sources that are proportional to signal amplitude e.g., crosstalk and signal-induced power supply noise

The second component represents noise sources that are independent of signal amplitude e.g., transmitter and receiver offsets and unrelated power supply noise

Page 7: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Proportional and Independent Noise Sources

Some of the noise sources are proportional to signal swing If you increase the signal

swing, you increase the noise

Crosstalk Inter-symbol interference Signal return ratio (Zr/Z0) Signal-induced power

supply noise Need to cancel these

sources of noise, not to overpower them

Some noise is independent of the signal swing Receiver or transmitter

sensitivity Receiver or Transmitter

offsets Independent power supply

noise Reference offsets

Page 8: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Power Supply Noise The power supply network

has parasitic elements On-chip : resistive Off-chip: inductive

Current draw across these elements induces a noise voltage

Instantaneous current is what matters Can be many times larger

than the DC current 10W chip draws 4A at 2.5V Peak current maybe 10-20A

IRI L

t

Page 9: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

High Speed Challenges Signal quality of a single net: reflections

and distortions from impedance discontinuities in the signal or return paths

Crosstalk between multiple nets: with ideal return paths

Rail collapse in the power and ground distribution network

EMI from a component or the system

All signal integrity problems can be divided into four categories. Each one has specific causes. By identifying the causes of each family of problems,design and technology based solutions may be developed and employed.

Page 10: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Three Levels of Analysis

Rules of thumb: Feed your intuition, useful for order of magnitude estimation

Self inductance 110nH/m

First order approximations: Analytical approximations, useful for quick estimates and early design tradeoffs

Numerical simulations: Field solutions, requires parasitic extraction, SPICE, or IBIS simulations

Page 11: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Don'ts and Do’s …

Don’ts: Base a final design on a rule of thumb estimate or

even an analytical approximation Use rules of thumb and analytical approximations

that are inconsistent or lack fidelity Automatically and immediately reach for a field solver

in every case Do’s:

Know your rules of thumb Know where to locate a range of analytical

approximations, each representing a non-dominated tradeoff point in terms of accuracy and efficiency

Check rule of thumb, analytical expression and field simulation for acceptable consistency and high fidelity

Use a field solver where and when absolute accuracy is important

Page 12: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Maxwell’s Equations

Page 13: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

Capacitive CrosstalkCapacitive Crosstalk

Page 14: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

What Is Crosstalk Crosstalk is a disturbance caused by the

electric or magnetic fields of some signal affecting another signal in an adjacent circuit

In an telephone circuit, crosstalk can result in your hearing part of a voice conversation from another circuit.

The phenomenon that causes crosstalk is called electromagnetic interference (EMI). It can occur in microcircuits within computers and audio equipment as well as within network circuits

Page 15: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Capacitive Crosstalk to a Floating Line

Capacitive coupling between on-chip lines

Coupling over shared signal returns 2

2 2

CcK C C Cc o

On-chip wires have significant

capacitance to adjacent wires On the same layer On adjacent layers

When two driven adjacent signals b and c change, a voltage is induced on a “floating” middle line a: Capacitive voltage divider: Signal is not restoredCcKC

C Cc o

( )V K V Vca C b

Page 16: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Capacitive Coupling to a Driven Line

A simplified circuit model of two driven capacitively coupled lines. Note that the aggressor makes an instantaneous transition (step input). Vxtalk(t) gives the coupled voltage waveform on the victim line 2 and that line 2 is not changing itself.

Page 17: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Coupling to a Driven Line (Cont’d)

If a victim line a is driven while an aggressor line b changes, then a will be disturbed but its steady state value will be restored with a time constant of = R(Cc+Co)

If the signal rise time tr of line b is slow compared to , then the magnitude of disturbance on line a will be reduced

The peak magnitude of voltage on line a in response to a unit magnitude signal on line b with rise time of tr is given by:

1 expC tc r

C C tc o r

Page 18: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Miller Effect and Wire Delays Capacitive crosstalk can affect the RC delay of signals

propagating down the line If aggressor(s) switch in opposite direction of the victim,

then the effective capacitance is double the coupling capacitance (due to the “Miller effect”) i.e., Ceff = 2Cc

If aggressor(s) switch in the same direction, the effective capacitance becomes zero (capacitive crosstalk is eliminated) i.e., Ceff=0

This can result in a large variation in the wire propagation delay

It is also a major cause of timing noise (skew and jitter) in VLSI circuits

Page 19: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Parallel Striplines

0.18 CMOS technology

Page 20: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Devgan’s Metric

Devgan’s metric states that:

Ramp input voltage source

Aggressor

Victim

( ), ( )

( )( )

CijV V Rn par n n

tr net ji desc nj adj i

It determines an upper bound on the peak node voltage in the victim

line in terms of: Coupling capacitance, Cij

Interconnect resistance (plus source resistance, if present) of the victim net, Rn

Rise time of at the output of the aggressor net driver, tr,net

Page 21: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Example Calculation of Devgan’s Metric

N0

Aga

N3

N1

N2

Agb

Agc

N3

N2

N1N0

R1

R0=Rs

R3

R2

3

, ( )

C ctr net c

2

, ( )

C btr net b

1

, ( )

C atr net a

Page 22: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Example of Devgan’s metric (cont’d)

1 2 3( )1 1 0, ( ) , ( ) , ( )

2 3;2 1 2 3 1 3, ( ) , ( )

C C Ca b cV R Rt t tr net a r net b r net cC Cb cV V R V V R

t tr net b r net c

N3

N2

N1N0

R1

R0=Rs

R3

R2

1

, ( )

C atr net a 3

, ( )

C ctr net c

2

, ( )

C btr net b

Noise voltage at nodes N1, N2, and N3 are:

Page 23: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Matrix Equations for Devgan’s Metric

v1 is a vector of node voltages on the aggressor net v2 is a vector of node voltages on the victim net vs is the input to the aggressor net

Page 24: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Matrix Equations (Cont’d)

Zeros in the conductance matrix indicate the fact that there is no resistive path between net 1 and net 2

The zero in the voltage source coefficient vector is due to the fact that the excitation is applied only to net 1 and net 2 is connected to ground

The matrix system can be rewritten in the Laplace domain as follows:

Note that the diagonal entries of capacitance matrices C1 and C2 correspond to coupling capacitances

Diagonal entries of the matrix Cc have a positive value

where

Page 25: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Matrix Equations (Cont’d)

Above equation may be solved by applying an excitation of B1k to the aggressor net 1 while open-circuiting all capacitances connected to it

This implies that for an RC aggressor line with no path to ground, the value of at all nodes

Considering the circuit interpretation of in each coupling capacitance can be replaced by a source of value k times the coupling capacitance at the node; any capacitance to ground is removed. Let us represent this vector of current sources be Ic

Then the equation would be Then the value of V2,max can be obtained by solving net 2 with

the above transformation on all capacitances. This may be carried out by means of a tree traversal

Page 26: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Pros/Cons of Devgan’s Metric

Lij is the length of adjacency between i and j , Sij is the separation between the two, and CT is a proportionality constant determined by the technology

Advantages Convex and separable in Sij

The optimal spacing problem (OSP) becomes a convex and separable mathematical program

Disadvantages No self capacitance or aggressor net resistance Unbounded behavior for decreasing rise time and/or increasing

coupling length

( ), ( )

( )( )

C LT ijV V Rn par n n t Sr net j ij

i desc nj adj i

Page 27: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Vittal’s Approach

Gives a generalization of the Devgan’s metric

Accounts for the self capacitance and resistance of the aggressor net No unbounded behavior Replaces the “driver rise time of the aggressor

net” with an “effective rise time of the aggressor net as seen by the victim net” as follows:

Total Elmore delay for the aggressor net, Dj

Total Elmore delay for the victim net, Dn

, ( ), ( ), ( ) ( ) ( )

2

tr net jt D Dr net j net n net j net n

Page 28: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Vittal’s Metric

The effective rise time of the aggressor net, net(j), as seen by the victim net, net(n), is then a function of ALL spacing variables. Therefore, it is Non-separable Non-convex in general

OSP becomes very compute-intensive

( ), ( ), ( )

( )( )

C LT ijV V Rn par n n

t Sr net j net n iji desc nj adj i

Page 29: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Kuhlmann’s approach

Waveform 1 shows the final value theorem method (Devgan’s metric) Waveform 2 shows the real noise signal used in Kuhlmann’s approach

Page 30: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Kuhlmann’s approach (cont’d)

Model the input voltage of the aggressor as an exponential function

where p corresponds to the time constant of the driver of the aggressor

For computational efficiency, we use the following approximation for the noise voltage induced on the victim net:

Using AWE, the coefficients of V2(s) can be found according to following equations:

Next we use V2(t) in the noise matrix equations which shows better results than the Devgan’s metric

s

Page 31: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Capacitive Crosstalk Countermeasures

Routing rules should be put in place to limit the magnitude of the capacitive crosstalk between any pair of signals

Floating signals should be avoided, and keeper devices should be placed on dynamic signals to reduce susceptibility to cross talk

Signal rise time should be made as long as possible, subject to timing constraints, to minimize effect of crosstalk on driven nodes

Sensitive signals should be separated from full swing signals or even shielded by conductors on either side that are tied to power or ground

Page 32: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Coupled Transmission Lines

Circuit schematic of N on-chip interconnects

Circuit schematic of N on-chip interconnects that are electromagnetically coupled (may ignore the L values for now)

Page 33: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Crosstalk between Transmission Lines

A signal transition on one transmission line induces forward and reverse traveling waves on adjacent transmission lines

Consider the scenario:

( , )( , )

V x tAV x t k tD fx x t

( , ) ( , ) ( , 2 )V x t k V x t V x t tC rx A A x

dx

tx=dx/ tx

Near-end crosstalk:

Far-end crosstalk:

Page 34: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Crosstalk (Cont’d) Inductive and capacitive

coupling add at the near end of the line

Both waves are positive Pulse begins at beginning of

coupled section Inductive and capacitive

coupling subtract at the far end of the line

In a homogeneous medium cancellation is exact

Narrow pulse coincident with wave on aggressor

Reverse and forward coupling coefficients:

4

k kcx lxkrx

2

k kcx lxk fx

;C Mck kcx lxC C Lc o

Page 35: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

TX Line Crosstalk Countermeasures

High swing signals should not be routed on lines immediately adjacent to low swing or other sensitive signals

The capacitive and inductive coupling coefficients should be matched to eliminate forward (far-end) crosstalk Place all signal lines between a pair of return

planes If the forward coupling coefficient is

nonzero, avoid long parallel runs of transmission lines

When possible, both ends of all transmission lines should be terminated in the characteristic impedance of the line

Page 36: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Countermeasures (Cont’d) Signal rise times should be made as long as

possible subject to timing constraints This reduces far-end crosstalk, which is directly

proportional to the signal derivative and this is reduced directly as the derivative is reduced

Near-end crosstalk is proportional to the maximum difference in the signal level across the coupled length and thus is reduced proportionally once the rise time is greater than tx, the coupled time

Signals on adjacent layers should be routed in perpendicular directions This results in zero inductive coupling and negligible

capacitance coupling The two lines of a differential pair should be

spaced close together and far from the lines of other pairs to keep the fields local to the pair

Page 37: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

Inductance EffectsInductance Effects

Page 38: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Introduction On-chip inductance effects have become increasingly significant

because: For performance considerations, some global signal and clock wires

are routed with large widths and thickness at the top levels of the metal to minimize delays. This decreases the resistance of the wires, making their inductive impedance comparable to the resistive part.

As the clock frequency increases and the rise times decrease, electrical signals comprise more and more high-frequency components, making the inductance effects more significant.

With the increase of chip size, it is fairly typical hat many wires are long and run in parallel, which increases the inductive cross talk and delay.

With the push of performance, some low-resistively metals,e.g. Cu wires, have been explored to replace Al in order to minimize wire RC delays. This could make the wire inductive reactance larger than the resistance.

Examples of Inductance effect Overshoot/undershoot edges Ldi/dt voltage drop Long range cross talk Frequency dependent resistance

Z R j L

Page 39: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Adverse Effects of the Inductance

Signal quality Inductive discontinuity and ringing

Ground bounce Collapse of the power and ground rail

voltage Crosstalk

Distributed mutual inductance in uniform transmission lines and lumped mutual inductance (SSO)

Electromagnetic interference (EMI) Generation of common mode noise currents

Page 40: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Clock Frequency vs. Equivalent Inductance

At 1 watt power dissipation, to achieve 100 MHz clock requires an equivalent lead inductance on the order of half a nH

Page 41: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

What Affects the Magnetic Field Lines

The number of field lines depends on: Current in the wire Proximity of the return path Cross section of the wire Other nearby currents Material that the wire is composed of Proximity of nearby metal surfaces Dielectric material surrounding the

wire

Magnetic field lines exist around all current carrying conductors

The magnetic field line density drops off with distance

Page 42: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Types of Inductance

Inductances may be classified as: Self inductance Mutual inductance

Or they may be classified as: Partial Inductance Loop inductance

Loop self inductance Loop Mutual inductance

Effective (or total) inductance

Page 43: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Self and Mutual Inductances

Inductance is related to the number of field lines around the conductor per ampere of current

Different types of inductance: Self or mutual Loop or partial Effective (total)

Self inductance # of field lines/amp of its own current

Mutual inductance # of field lines/amp of another line’s current

Page 44: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

First-order Equation for Self Inductance

2 30 ln2 4

d dLself

r

d

Radius=r

c

b

d

2 10 ln ln( )2 2

d dLself

b c

Note that is obtained from lookup table. For more information visit: http://home.san.rr.com/bushnell/self_inductance.htm

Page 45: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

First-order Equation for Mutual Inductance

Notice the change in mutual inductance with rod separation

d

s

Radius=r

20 ln2

220 ln 1

2 2

d ds d Lmutual

s

d d s ss d Lmutual s d d

Page 46: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Voltage Across the Inductance

When the number of field lines around a conductor changes, a voltage is induced:

( )N LI I dIV L L

t t t dt

V

I

Page 47: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Partial Inductance

Partial inductance is the portion of loop inductance for a wire segment when its current returns via the infinity

Any loop can be divided into segments Every segment has a partial self inductance, which denotes the

number of field lines around the segment, when the only current is through this section

Every segment has a partial mutual inductance to every other segment, which denotes the number of field lines around both segments, when current goes through only one section

La

Lb

LM

Wire a

Wire b (return path)

Inductance of this part

Page 48: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Properties of Partial Inductance Partial self and mutual inductance are based on

geometry only They may be obtained by using a 2D/3D field

solver such as Avanti’s Raphael or MIT’s FastHenry

The return path or the current loop may be determined through spice simulations

The partial self and mutual inductances may be frequency and proximity dependent

Page 49: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Loop Self Inductance

Loop self inductance of coil b =Total number of field lines around b

current in b

The loop inductance accounts for the presence of the return path current

Page 50: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

First-order Equation for Loop Self Inductance

0 ln( ),d s

Lloop selfr

d

signal

return

s

Radius=r

0,s

L dloop selfw

W

d

s

Two parallel rods

Two parallel planes

Page 51: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Loop Mutual Inductance

Loop self inductance of coil b = # of field lines per ampere around b, which are due to the current in b

Loop mutual inductance of a and b = # of field lines per ampere around a, which are due to the current in b

Page 52: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

First-order Equation for Loop Mutual Inductance

abh

02 2

, 3/ 22 2 2

a bLloop mutual

a h

For more information visit: http://www.physics.uq.edu.au/people/ficek/ph348/sols/sol4/node4.html

Page 53: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Induced Voltages due to a Fixed dI/dtD

R

a

,dIself aV Lselfa noise dt

a

b,

dImutual bV Lmutuala noise dt

Page 54: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Effective Inductance Effective (a.k.a. total or net) inductance is the

total number of field lines per ampere of current which are around a section of a loop

Effective inductance Depends strongly on where the signal path is Increases (decreases) if the return path is moved away

from (brought closer to) the signal path

,L L Leff b b M The effective inductance of wire “b” is:

La

Lb

LM

Wire a

Wire b (return path)

Page 55: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Effective Loop Inductance

Loop inductance increases as wires are moved farther from one another

Some key questions are: What happens to characteristic impedance as wires are moved

closer together? What is the voltage drop across the whole loop for a fixed dI/dt? What design features influence Lloop ?

La

Lb

LM

Wire a

Wire b(return path)

, ,

2

L L Leff eff a eff b

L L L L L L La M b M a b M

Page 56: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Signal Risetime and Ringing Effect

Inductance is the number of field lines per ampere of current

0.8m wide or narrower wires do not have significant inductance effects

The worst case inductance is when all aggressors switch in the same direction

In general, with the inductance effect, signal rises faster. The most serious inductance impact is high-Q ringing where

Rise times shorter than one-half cause the worst ringing

The inductive cross talk noise tops off at lengths of around 4000 to 6000 length

2 LC

/exp

24 1

L CQ Overshoot

R Rs Q

Page 57: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

Ground BounceGround Bounce

Page 58: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Ground Bounce Digital logic requires a stable, quiet, DC supply voltage while

drawing a large AC current with very high-frequency components comparable to signal rise times (about 200A from power supply and derivative at the point of use over 200GA/s)

The supply and ground are distributed over a network with inductive and resistive components

The current causes IR drop across the resistive component The derivative of current causes Ldi/dt across the inductive

components

A Typical Power Supply Network

Page 59: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

The Power Distribution Problem Modern digital systems operate at small DC

voltages 1.5 to 3.3V must be held to within ±10% (or less)

and draw large AC currents 10A or more per chip, 100A per board, KA in a system May go from 0 to full current in less than one clock cycle

over a supply network with parasitic elements Inductance of bus bars, PC boards, packages, and bond

wires Resistance of on-chip wires

Page 60: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Example of Ground Bounce Effect

A simplified circuit schematic of 16 output buffers switching simultaneously

Page 61: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Other Names for Ground Bounce

Other names are: I noise Switching noise dI/dt noise SSO (simultaneous switching output) noise SSN (simultaneous switching noise)

Page 62: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

A Typical Power Supply Network

Actually a tree with branching at each level Parasitic inductance (off-chip) and resistance (on-chip) Power and ground networks are usually symmetric Capacitance added to give a tapered frequency response

Page 63: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Typical Load Current For a given clock domain, load is usually periodic with

the clock May stop or start in a single cycle With multiple clock domains, they may drift into phase

reinforcing one another Load is often resistive, varying linearly with supply

voltage Some loads are high impedance, constant independent

of supply voltage

Page 64: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Local Loads and Signal Loads

Local loads pass current from a point in the local power network to one in the local ground network Current can be supplied from a

nearby bypass capacitor Signal loads connect a point in

the power network via a signal lead to a distant point in the ground network Usually due to unbalanced

signaling Current must return over a long

path Bypass capacitors are not effective

Page 65: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Inductive (Off-chip) Power Supply Noise

Each section of the supply network is an LC circuit Has a resonant (natural) frequency, Inductor carries DC current ( ) Capacitor supplies AC current ( ) At LC, the LC impedance is infinite, thus, a small current

will cause large voltage oscillations Size the bypass capacitor to

Supply cycle to cycle AC current with acceptable ripple Handle inductor start/stop transient

1/ 2LC

LC

LC

LC

Page 66: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Response of an LC Section to Typical Supply Current

Over a clock cycle, inductor current is essentially constant, Iavg ; Load current varies considerably; Capacitor current is the difference between the two; Capacitor voltage ripples due to this AC current

Page 67: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Bypass Capacitor to Handle Normal Load in a Cycle

Inductor carries the average (DC) current and the bypass cap. supplies the instantaneous (AC) current while keeping supply variation less than some threshold V

ki reflects the maximum fraction of total charge transferred each cycle, Qck, that must be supplied by the capacitor at a given instant, t

ki is a function of the waveform and varies from a max of 1 for a delta function to 0.25 for a triangle waveform to 0 for a DC current Typical value is 0.25 to 0.5

( )0

max

tI I dtavg

ki t tavg ck

Page 68: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Bypass Capacitor to Handle Start/StopTransient

When circuit is off, inductor current is 0

During startup, the capacitor must supply current to the load while the inductor current ramps up

Similarly, when the circuit shuts down, the capacitor must absorb the inductor current while it ramps down

In either case, the situation is that of a step current into an LC circuit

Response is a sine-wave Vmax is the threshold for

supply variation

B

B

max

Page 69: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

Putting It Together: Sizing the Bypass Capacitor

Bypass capacitor must be sized to handle both types of inductive power supply noise ripple due to non-uniform

current within a clock cycle start/stop transients maximum ripple can happen at

peak or trough of transient Approximate capacitance

requirement by summing the independent requirements

i.e.

Page 70: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

M. Pedram

The Truth about Bypass Capacitors

Most capacitors are only capacitors at low frequencies

Capacitors have parasitic series resistance and inductance

Every pico-farad has its very own nano-Henry

Two key breakpoints LC frequency RC frequency

Capacitors are ineffective at bypassing currents above either of these frequencies

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Impedance vs. Frequency for Typical Capacitors

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Controlling the Ground Bounce

Ground bounce

Minimizing the ground bounce: Minimize dI/dt: don’t use shared return path (instead

use multiple return paths) Low Lb: use wide return path conductor (use planes,

short length) High LM: put the signal close to its return path -- 50ohm

signal lines, low Z0 power/ground planes

La

Lb

LM

Wire a

Wire b(return path)

( ),dI dIb bV L L Lb eff b b Mdt dt

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Signal Path Topologies for Low Bounce

The following geometries have the lowest total inductance of the current return paths: Coaxial cable (which is not very practical) Wide, closely spaced planes (too low a Z0) Strip line Micro strip Twin lead

The golden rule in designing the power and ground distribution network is to keep the impedance looking into the power supply << Zload

Keep Zpower supply < 5% Zload

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Summary of Ground Bounce

Ground bounce Is the voltage drop across the return path Can be caused by signal-returns or power-returns Is minimized by controlling the total inductance of the

return path Is strongly dependent on partial self inductance

between signal and return path Is strongly dependent on partial mutual inductance

between signal and return paths Primarily arises in packages and connectors Anything (such as gaps in planes) that increases the

total inductance of the return path increases the ground bounce

Also drives common currents into the cables and creates EMI

Page 75: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

IR DropIR Drop

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Power Distribution Trends

The on-chip power distribution problem is getting much harder as technology evolves

Combination of lower voltages higher current density thinner metal layers larger chips

We are quickly approaching the point where peripheral bonding will not be adequate for high-performance chips

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Logic Current Profile Why does on-chip logic produce a ‘ spikey’ current

profile? Consider the logic that generates the current Current is drawn to charge gate and wire capacitance

Q=CV, E=0.5 CV2

Typical behavior includes circuit idle before clock edge

very little current exponential clock amplification just before clock edge

exponential ramp up in current flip-flops are clocked

current depends on activity factor Fanout in a logic circuit

exponential ramp up in current Fan-in or selection in a logic circuit

drop in current

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Logic Current Profile Examples (Con’t)

A memory or register array fanout in decoder selection of word-line amplification in S/A selection in multiplexer

A carry-lookahead adder modest fan-out in PGK blocks fan-out in carry tree fan-in in carry tree, but with amplification amplification to drive output

Control logic much like the decoder fan-out in the first few stages then tree fanning in to flip-flops often a long, serial tail

Overall current profile is the superposition of all of these profiles

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Worst-Case vs. Average Logic Current Profile

Current drawn is often very data dependent e.g., a data path may switch 64-bits from all

0s to all 1s on average only 1/4 of the bits will have this

transition when there is a transition at all

For noise analysis we must consider worst-case power cannot allow possible, but unlikely events to

cause system failure For battery life we may consider average

power

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IR Drops

Power distribution network is designed to keep IR drop on VDD and GND networks within limits e.g., for 10% supply variation, can drop at most 5% on each

supply Networks are usually designed specifically for the loads

of a given chip. However, we can gain insight into the process by considering a uniform load

For example, suppose current densities are – J peak = 0.3A/mm 2 – J avg = 0.05A/mm 2

For a peripheral bonded chip, VDD and GND are usually distributed by combs with interdigitated fingers – a hierarchy of such combs is often used

How much of a metal layer (or how many layers) do we need to distribute this power?

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Power Distribution Network: The Top-level View

VDD

GND

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Calculation of the IR Drop

A simplified equivalent circuit of one half of a pair of power buses is shown in the above figure; Power and GND are supplied from the left side of the figure

The buses are then divided into N segments, each with resistance:

Lp is the total length of the global power buses; rw is the sheet resistance of the wire, and Wp is the width of the global power buses

The current source associated with each segment supplies power to circuits in an area of:

kp is the fraction of the metal layer devoted to the power buses of one polarity

2

L rp wRp NWp

2

L Wp pAp N k p

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IR Drop Calculation (Cont’d) Voltage integrates along the strip, therefore, the IR drop

from the edge to the center of the two buses in a square shape chip is:

Jpk is the peak current density If N goes to infinity, the above equation can be written

as:

2

2

/ 2 / 2

41 1

N Ni J L rpk p w

V i J A RIR pk p pN k pi i

2/ 2

80

pL J r x J r Lpk w pk w pV dxIR k kp p

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IR Drop Countermeasures

Use an area-bonded chip so that power need not be distributed from the chip edge

Use more or thicker metal layers to distribute the power to reduce the effective resistivity, rw

Use on-chip bypass capacitors to flatten the current profile so the distribution need only be sized for average rather than the peak current

Page 85: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

Skin EffectSkin Effect

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Transmission Line Loss Models

Losses that remain constant with frequency can be modeled as: Dielectric constant Dissipation factor, tan() RDC

Other losses, RAC, are proportional to frequency f

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Signal Propagation in the Frequency Domain

When a sine wave is launched into a transmission line, the frequency of the sine wave propagates unchanged, but the amplitude will drop off. As it propagates, the amplitude will be exponentially attenuated. This can be described with an attenuation per length coefficient, with the units of dB per inch, for example

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Modeling Lossy Lines in theFrequency Domain

In general, we will be assuming that R and G may be frequency dependent, but C and L will be constant in frequency, and will use the high frequency limits for these terms. As we shall see, frequency dependence of inductance can be accounted for in the resistance term

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Low Loss Approximation At low frequencies (towards the DC end), current is uniformly

distributed over the cross section of each conductor. We will refer to these frequencies as the low-frequency region

As the frequency increases, due to the induced electric field, the current distribution starts changing. There are three reasons : Edge effect: the current tends to concentrate at the sharp edges of

a conductor which affects both the signal conductor and the ground conductor

Proximity effect: particularly pronounced on the ground conductor, the current of which tends to concentrate below the signal conductor as the frequency increases

Skin effect: pronounced in the high-frequency region on both conductors, where the current becomes concentrated in the thin layer at the surface

MicrostripStripline

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Skin Effect

High frequency current flows primarily on the surface of a conductor with current density falling off exponentially with depth into the conductor:

expd

J

The skin depth, ,the depth where the current has fallen

off to exp(-1) of its normal value is given by:

1/ 2f

is the conductivity of the material, and f is the frequency of the signal

The tendency of alternating current to flow near the surface of a conductor, thereby restricting the current to a small part of the total cross-sectional area and increasing the resistance to the flow of current

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The Origin of Skin Depth

At DC, if each ring has the same current, which one has more inductance?

At high frequency, which ring has more impedance? If you were an electron, where would you want to be? The center path has the highest inductance since it has all the

field lines of the outer ring plus the field lines that are between it and the outer ring. In general, the self inductance of the current path will decrease as you approach the outer edge

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Skin Depth Limited Current Distributions

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A Simple ApproximationAssume the signal path width is w and its thickness is t

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Resistance Modeling

Recall that f is in MHz

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Inductance is Frequency Dependent

Page 96: Chapter 3: Noise Sources Massoud Pedram Dept. of EE University of Southern California

Electromigration and Electromagnetic Interface

Electromigration and Electromagnetic Interface

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Electromigration Over long distances, current density must be kept low to avoid large IR

drops; Over short distances, current density must still be kept low to avoid metal migration

Over time, wires that carry high current densities will fail as the metal is eroded away

think of your wire as a fuse Migration threshold varies depending on process, temperature, and

lifetime If a metal layer is subjected to an average current density of greater

than about 1mA/m2 (109 A/m2), the layer will slowly fail This is often a factor on short power buses that connect from the main

bus to a point of high current use To avoid metal migration the fraction kp of metal devoted to each

power bus must satisfy:

where t is the thickness of the metal layer, Jaw is in A/mm2

It can also be a factor on the output of high-current drivers Migration applies to vias as well as wires

310

2aw p

p

J Lk

t

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Electromagnetic Interference (EMI)

Large external electric and magnetic fields can couple into circuit nodes and cause noise

For both types of fields, susceptibility is reduced by keeping a minimum distance between a signal and its return

For E fields, the induced voltage is proportional to the distance between the signal and return path

For B fields , the amount of flux coupled is proportional to the area of the loop between the signal and the return path

Electromagnetic Interference is rarely a problem in digital circuits unless they are operated near large sources of fields

Usually, the larger concern is the interference created by the digital system

The same techniques that reduce susceptibility to external fields also reduce emissions by the digital system

Most digital systems can be made “quiet” naturally by keeping signals and return paths close together, balancing currents in external cables, controlling rise time on signals, and properly terminating lines

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Appendix: How to Minimize Inductance Effects

Dedicated ground wires

Differential signals

Common mode noises such as inductive effects may be rejected

However, the design suffers from longer delays to Miller effect

11 12 21 22L L L L Lloop

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How to Minimize Inductance Effects (Cont’d)

Buffer Insertion

Splitting wires, , ; 1

/ 2R L Cl l l k

nn nk

G S S G G S G

G S S S S G G S S S S S S S S G

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How to Minimize Inductance Effects (Cont’d)

Termination

Continuous power/ground planes Continuous power/ground planes on-chip provides an

impedance-controlled low-loss signal lines

Shunt-RC termination

Series_R Shunt-C termination

Series_R termination

Diode termination

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Appendix II:Values for Single Supply Noise vs. Distance

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On-chip Parasitic Capacitance

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Typical Transmission Line Parameters and Coupling Coefficients