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Chapter 7: FET Biasing Islamic University of Gaza Dr. Talal Skaik

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Chapter 7:

FET Biasing

Islamic University of Gaza

Dr. Talal Skaik

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Basic Current Relationships

For all FETs:

A0IG

SD II

For JFETS and D-Type MOSFETs:

2

P

GSDSSD

V

V1II

For E-Type MOSFETs:

2TGSD )VV(kI

2 Dr. Talal Skaik 2014

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

2

0

0, ,

1

G

DS DD D D

S D DS GS GG

GSD DSS

p

I A

V V I R

V V V V V

VI I

V

Fixed-Bias Configuration

3 Dr. Talal Skaik 2014

Network for dc analysis.

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Fixed-Bias Configuration –Graphical Solution

4 Dr. Talal Skaik 2014

Plotting Shockley’s equation. Finding the solution for the

fixed-bias configuration.

2

1 GSD DSS

p

VI I

V

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.1

5 Dr. Talal Skaik 2014

Find VGSQ, IDQ, VDS, VD, VG, VS.

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.1 - graphical solution

6 Dr. Talal Skaik 2014

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Self-Bias Configuration

7 Dr. Talal Skaik 2014

DC analysis of the self-bias

configuration.

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Self-Bias Configuration

8 Dr. Talal Skaik 2014

DC analysis of the self-bias

configuration.

2

1

GS D S

GSD DSS

p

V I R

VI I

V

2

2

D

2

1 2 D

1

1

By squaring and rearranging, I has the form:

0 [Solve for I ]

D SD DSS

p

D SD DSS

p

D D

I RI I

V

I RI I

V

I k I k

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Self-Bias Configuration – graphical solution

9 Dr. Talal Skaik 2014

SDGS RIV

•Sketch the transfer curve.

•Draw the line:

•The Q-point is located where

the line intersects the transfer

curve.

•Use the value of ID at the Q-

point (IDQ) to solve for the

other voltages:

( )DS DD D S D

S D S

D DS S

V V I R R

V I R

V V V

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.2

10 Dr. Talal Skaik 2014

Find VGSQ, IDQ, VDS, VD, VG, VS.

Solution

Draw the line: SDGS RIV

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.2 - solution

11 Dr. Talal Skaik 2014

Determining the Q-point

for the network.

Sketching the device

characteristics for the JFET

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Voltage-Divider Bias

IG = 0 A

IR1=IR2

12 Dr. Talal Skaik 2014

Redrawn network for dc analysis.

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Voltage-Divider Bias

13 Dr. Talal Skaik 2014

The Q point is established by

plotting a line that intersects the

transfer curve.

21

DD2G

RR

VRV

VG is equal to the voltage across

divider resistor R2:

Using Kirchhoff’s Law:

SDGGS RIVV

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Voltage-Divider Bias

14 Dr. Talal Skaik 2014

Step 1

Plot the line by plotting two

points:

•VGS = VG, ID = 0 A

•VGS = 0 V, ID = VG / RS

Step 2

Plot the transfer curve by plotting

IDSS, VP and the calculated values

of ID

Step 3

The Q-point is located where the

line intersects the transfer curve

SDGGS RIVV

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Voltage-Divider Bias

15 Dr. Talal Skaik 2014

SDGGS RIVV

Effect of RS on the resulting Q-point.

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Voltage-Divider Bias

16 Dr. Talal Skaik 2014

Using the value of ID at the Q-point, solve for the other variables in

the voltage-divider bias circuit:

SDS

DDDDD

SDDDDDS

RIV

RIVV

)R(RIVV

21

DDR2R1

RR

VII

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.5

17 Dr. Talal Skaik 2014

Find VGSQ, IDQ, VDS, VD, VG, VS.

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

D-Type MOSFET Bias Circuits

Depletion-type MOSFET

bias circuits are similar to

those used to bias JFETs.

The only difference is that

depletion-type MOSFETs

can operate with positive

values of VGS and with ID

values that exceed IDSS.

18 Dr. Talal Skaik 2014

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.7

19 Dr. Talal Skaik 2014

SDGGS RIVV

Step 1 Plot the line for

•VGS = VG, ID = 0 A

•ID = VG/RS, VGS = 0 V

Step 2 Plot the transfer curve using IDSS, VP and

calculated values of ID.

Step 3 The Q-point is located where the line

intersects the transfer curve is. Use the ID at

the Q-point to solve for the other variables in

the voltage-divider bias circuit.

These are the same steps used to

analyze JFET voltage-divider bias

circuits.

21

DD2G

RR

VRV

Find VGSQ, IDQ, VDS

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.7 - Solution

20 Dr. Talal Skaik 2014

SDGGS RIVV 21

DD2G

RR

VRV

22

1

11 =6mA 1 10.67

3

10 (18 )1.5 1.5 (750)

10 110

GS

GSD DSS

p

G GS D

For V V

VI I mA

V

M VV V V V I

M M

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.9

21 Dr. Talal Skaik 2014

Find VGSQ, IDQ, VD

GS

22

plot line :

/

6, ( 6) / 2.4 2.5

plot transfer curve for V =+2V:

21 =8m 1 12.5

8

GS D S

D GS S

GS D

GSD DSS

p

To V I R

I V R

For V I k mA

To

VI I mA

V

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

E-Type MOSFET Bias Circuits

The transfer characteristic for

the e-type MOSFET is very

different from that of a simple

JFET or the d-type MOSFET.

22 Dr. Talal Skaik 2014

2

( )D GS GS ThI k V V

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Feedback Bias Circuit

IG = 0 A

VRG = 0 V

VDS = VGS

VGS = VDD – IDRD

23 Dr. Talal Skaik 2014

DC equivalent of the network

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Feedback Bias Q-Point Step 1

Plot the line using

•VGS = VDD, ID = 0 A

•ID = VDD / RD , VGS = 0 V

Step 2

Using values from the specification

sheet, plot the transfer curve with

•VGSTh , ID = 0 A

•VGS(on), ID(on)

Step 3

The Q-point is located where the

line and the transfer curve intersect

Step 4

Using the value of ID at the Q-

point, solve for the other variables

in the bias circuit.

24 Dr. Talal Skaik 2014

VGS = VDD – IDRD

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.11

25 Dr. Talal Skaik 2014

Find VGSQ, IDQ

( )

2

( ) ( )

3

2

60.24 10

8 3

D on

GS on GS Th

Ik

V V

mAk

2 23

( ) 0.24 10 3D GS GS Th GSI k V V V

Plot Transfer Curve:

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.11 - solution

26 Dr. Talal Skaik 2014

Plot the line : VGS = VDD – IDRD

VGS = 12 – ID(2k)

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Voltage-Divider Biasing

Plot the line and the transfer curve to find

the Q-point. Use these equations:

21

DD2G

RR

VRV

)RR(IVV

RIVV

DSDDDDS

SDGGS

27 Dr. Talal Skaik 2014

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.12

28 Dr. Talal Skaik 2014

Find VGSQ, IDQ

( )

2

( ) ( )

3

2

30.12 10

10 5

D on

GS on GS Th

Ik

V V

mAk

2

( )D GS GS ThI k V V

230.12 10 5D GSI V

18 (40 )18

22 18G

GS G D S

M VV V

M M

V V I R

18 (0.82 )GS DV V I k

Copyright ©2009 by Pearson Education, Inc.

Upper Saddle River, New Jersey 07458 • All rights reserved.

Electronic Devices and Circuit Theory, 10/e Robert L. Boylestad and Louis Nashelsky

Example 7.12 - Solution

29 Dr. Talal Skaik 2014

230.12 10 5D GSI V 18 (0.82 )GS DV V I k