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EE141 1 Test Principles and Architectures Ch. 9 - Memory Diagnosis & BISR - P. 1 Chapter 9 Chapter 9 Memory Diagnosis and Memory Diagnosis and Built-In Self-Repair Built-In Self-Repair

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Chapter 9. Memory Diagnosis and Built-In Self-Repair. What is this chapter about?. Why diagnostics? Yield improvement Repair and/or design/process debugging BIST design with diagnosis support MECA : a system for automatic identification of fault site and fault type - PowerPoint PPT Presentation

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Chapter 9Chapter 9

Memory Diagnosis and Built-In Memory Diagnosis and Built-In Self-RepairSelf-Repair

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What is this chapter about?What is this chapter about? Why diagnostics?

Yield improvement– Repair and/or design/process debugging

BIST design with diagnosis support MECA: a system for automatic

identification of fault site and fault type Built-in self-repair (BISR) for embedded

memories Redundancy analysis (RA) algorithms Built-in redundancy analysis (BIRA)

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How to Identify Faults?How to Identify Faults?RAM Circuit/Layout Tester/BIST Output

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Fault Model SubtypesFault Model Subtypes

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March Signature & DictionaryMarch Signature & DictionaryMarch 11N

E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 E10

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Memory Error Catch and Analysis (MECA)Memory Error Catch and Analysis (MECA)

Source: Wu, et al., ICCAD00

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BIST with Diagnosis SupportBIST with Diagnosis Support

Source: Wang, et al., ATS00

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Test ModeTest Mode In Test Mode it runs a fixed algorithm for

production test and repair. Only a few pins need to be controlled, and BGO

reports the result (Go/No-Go).

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CTR State Diagram in Test ModeCTR State Diagram in Test Mode

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Fault Analysis Mode (FSI Timing)Fault Analysis Mode (FSI Timing) In Fault Analysis Mode, we can apply a

longer March algorithm for diagnosis FSI captures the error information of the faulty

cells

EOP format:

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CTR State Diagram in Analysis ModeCTR State Diagram in Analysis Mode

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Fault AnalysisFault Analysis Derive analysis equations from the fault dictionary

Convert error maps to fault maps by the equations

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TPG State DiagramTPG State Diagram

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Waveform Generated by TPGWaveform Generated by TPG

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Diagnostic Test Algorithm GenerationDiagnostic Test Algorithm Generation Start from a base test: generated by TAGS, or user-specified Generation options reduced to Read insertions Diagnostic resolution: percentage of faults that can be

distinguished

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Fault Bitmap ExamplesFault Bitmap Examples

Idempotent Coupling Fault Stuck-at 0

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Redundancy and RepairRedundancy and Repair Problem:

We keep shrinking RAM cell size and increasing RAM density and capacity. How do we maintain the yield?

Solutions: Fabrication

– Material, process, equipment, etc. Design

– Device, circuit, etc. Redundancy and repair

– On-line EDAC (extended Hamming code; product code)

– Off-line Spare rows, columns, blocks, etc.

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From BIST to BISRFrom BIST to BISR

BISTBIST BISDBISD BIRABIRA BISRBISR

• BIST: built-in self-test• BIECA: built-in error catch & analysis

-BISD: built-in self diagnosis-BIRA: built-in redundancy analysis

• BISR: built-in self-repair

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RAM Built-In Self-Repair (BISR)RAM Built-In Self-Repair (BISR)

RAM

MU

XBIST

Redundancy

Analyzer

Reconfiguration MechanismS

pare

Ele

me

nts

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RAM Redundancy AllocationRAM Redundancy Allocation 1-D: spare rows (or columns) only

SRAM Algorithm: Must-Repair

2-D: spare rows and columns (or blocks) Local and/or global spares NP-complete problem Conventional algorithm:

– Must-Repair phase

– Final-Repair phase Repair-Most (greedy) [Tarr et al., 1984]

Fault-Driven (exhaustive, slow) [Day, 1985]

Fault-Line Covering (b&b) [Huang et al., 1990]

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Redundancy ArchitecturesRedundancy Architectures

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Redundancy Analysis SimulationRedundancy Analysis SimulationMemory

Defect InjectionFault Translation

Faulty Memory

Test AlgorithmSimulation

RA Simulation

RAAlgorithm

SpareElements

ResultFail bit map and sub-maps

Ref: MTDT02

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DefinitionsDefinitions Faulty line: row or column with at least one

faulty cell A faulty line is covered if all faulty cells in the line

are repaired by spare rows and/or columns. A faulty cell not sharing any row or column

with any other faulty cell is an orthogonal faulty cell

r: number of (available) spare rows c: number of (available) spare columns F: number of faulty cells in a block F’:number of orthogonal faulty cells in a block

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Example Block with Faulty CellsExample Block with Faulty Cells

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Repair-Most (RM)Repair-Most (RM)

1. Run BIST and construct bitmap

2. Construct row and column error counters

3. Run Must-Repair algorithm

4. Run greedy final-repair algorithm

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Worst-Case Bitmap (After Must-Repair)Worst-Case Bitmap (After Must-Repair)

r=2; c=4

• Max F=2rc

• Max F’=r+c

• Bitmap size: (rc+c)(cr+r)

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Essential Spare Pivoting (ESP)Essential Spare Pivoting (ESP) Maintain high repair rate without using a

bitmap Small area overhead

Fault Collection (FC) Collect and store faulty-cell address using row-

pivot and column-pivot registers– If there is a match for row (col) pivot, the pivot is an

essential pivot– If there is no match, store the row/col addresses in the

pivot registers If F > r+c, the RAM is irreparable

Spare Allocation (SA) Use row and column pivots for spare allocation

– Spare rows (cols) for essential row (col) pivots SA for orthogonal faults Ref: Huang et al., IEEE TR, 11/03

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ESP ExampleESP Example

(1,0) (1,6) (2,4) (3,4) (5,1) (5,2) (7,3)

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Cell Fault Size DistributionCell Fault Size Distribution

Mixed Poisson-exponential distribution

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Repair Rate (r=10)Repair Rate (r=10)

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SC

G0

SC

G1

Redundancy OrganizationRedundancy Organization

SEG0

SEG1

SR: Spare Row; SCG: Spare Column Group; SEG: Segment

SR0SR1

ITC03

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Main Memory

Spare Memory

BIRA

BIST

Wrapper

Q

D

A

BISR ArchitectureBISR Architecture

MAO

POR

MAO: mask address output; POR: power-on resetRef: ITC03

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Power-On BISR ProcedurePower-On BISR Procedure

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Subword A subword is consecutive bits of a word. Its length is the same as the group size.

Example: a 32x16 RAM with 3-bit row address and 2-bit column address

Subword DefinitionSubword Definition

A word with 4 subwords A subword with 4 bits

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To reduce the complexity, we use two row-repair rules If a row has multiple faulty, we repair the faulty row by a spare row

if available.

If there are multiple faulty subwords with the same column address and different row addresses within a segment, the last detected faulty subword should be repaired with an available spare row.

Examples:

Row-Repair RulesRow-Repair Rules

subword subword

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BIRA ProcedureBIRA Procedure

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Basic BIST ModuleBasic BIST Module

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BIRA ModuleBIRA Module

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State Diagram of PEState Diagram of PE

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Block Diagram of ARUBlock Diagram of ARU

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Repair Rate AnalysisRepair Rate Analysis Repair rate

The ratio of the number of repaired memories to the number of defective memories

A simulator has been implemented to estimate the repair rate of the proposed BISR scheme

[Huang et al., MTDT02] Industrial case:

SRAM size: 8Kx64 # of injected random faults: 1~10 # of memory samples: 534 RA algorithms: proposed and exhaustive search

algorithms

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An Industrial CaseAn Industrial Case

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Redundancy: 4 spare rows and 2 spare column groupsGroup size: 4

A 8Kx64 Repairable SRAMA 8Kx64 Repairable SRAM

Technology: 0.25umSRAM area: 6.5 mm2

BISR area : 0.3 mm2

Spare area : 0.3 mm2

HOspare: 4.6%HObisr: 4.6%Repair rate: 100% (if # random faults is no more than 10)

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Waveform of EMA & MAOWaveform of EMA & MAO

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Normal Mode WaveformNormal Mode Waveform

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Repair Rate (Group Size 2)Repair Rate (Group Size 2)

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Repair Rate (Group Size 4)Repair Rate (Group Size 4)

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Yield vs. Repair RateYield vs. Repair Rate

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Concluding RemarksConcluding Remarks BIST with diagnosis support

Fault type identification done by an offline diagnosis process using MECA

RAM design and process debugging for yield enhancement

From BIST to BIRA Effective implementation by ESP

– Greedy algorithm

An industrial case has been experimented Full repair achieved (for # random faults no more

than 10) Only 4.6% area overhead for the 8Kx64 SRAM