charge transport through a double quantum dot in the presence of dynamical disorder

13
Department of Quantum Mechanics S eminar 1 20 April 2004 Division of Open Systems Dynamics CHARGE TRANSPORT THROUGH A DOUBLE QUANTUM DOT IN THE PRESENCE OF DYNAMICAL DISORDER Jan Iwaniszewski with prof. Włodzimierz Jaskólski, prof. Colin Lambert, Lancaster, UK Supported by The Royal Society, London

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CHARGE TRANSPORT THROUGH A DOUBLE QUANTUM DOT IN THE PRESENCE OF DYNAMICAL DISORDER. Jan Iwaniszewski with prof. Włodzimierz Jaskólski, prof. Colin Lambert, Lancaster, UK Supported by The Royal Society, London. Outline. Charge transport in coupled semiconductor quantum dots applications - PowerPoint PPT Presentation

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Page 1: CHARGE TRANSPORT THROUGH A DOUBLE QUANTUM DOT IN THE PRESENCE  OF DYNAMICAL DISORDER

Department of Quantum Mechanics Seminar1

20 April 2004

Division of Open Systems Dynamics

CHARGE TRANSPORTTHROUGH A DOUBLE QUANTUM

DOT IN THE PRESENCE

OF DYNAMICAL DISORDER

CHARGE TRANSPORTTHROUGH A DOUBLE QUANTUM

DOT IN THE PRESENCE

OF DYNAMICAL DISORDER

Jan Iwaniszewskiwith

prof. Włodzimierz Jaskólski, prof. Colin Lambert, Lancaster, UK

Supported by The Royal Society, London

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OutlineOutline

Charge transport in coupled semiconductor quantum dots• applications• description

Dynamical disorder• sources (defects)• two-level fluctuator

Charge transport in the presence of fluctuators• description• two-level system and fluctuator• modification of the current

Perspectives

Page 3: CHARGE TRANSPORT THROUGH A DOUBLE QUANTUM DOT IN THE PRESENCE  OF DYNAMICAL DISORDER

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Description of the systemDescription of the system

Model: single-level dots Coulomb blockade weak coupling to leads leads in thermal

equilibrium

ii,Xi,Xi,XX

ii,XXi,Xi,XSX

2

1RLS

leads

RL

ninteractio

SRSLS

aaH

ac)(VH

LRRLRRELLEH

HHHHHH

c.c.

L,T

R,T

ER

VR

VL

L R

J

EL

evolution of the total system

000

empty state

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Reduction of the descriptionReduction of the description

reduced evolution

2nd order perturbation infinitely fast relaxations in leads

Born-Markov approximation

RRRRRRRRRRRRR

LLLLLLLLLLLLL

S

c,cc,cc,cc,c,cc

c,cc,cc,cc,c,cc

,Hdt

d

E

E

i

i

i

X

X

2

XX2

1X

X

2

XX2

1X

E1EVEg

EEVEg

E

f

f

1

XXX

X

1kT

EexpE

Eg

f

where

- density of states

- detuning

Fermi distribution

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Rate equationsRate equations

)()][

)()][

)(22

)(22

22)(2

R,L,0M,N,MN

R,RL,L2L,RRLRLL,R

R,RL,L2R,LRLRLR,L

L,RR,L2R,RR0,0RR,R

L,RR,L2L,LL0,0LL,L

R,RRL,LL0,0RL0,0

M,N

i

i

i

i

i

i

EE

EE

RL

RL

E(E

E(E

IL

IR

R,RL,Le

R,RL,Lz

L,RR,Ly

L,RR,Lx

)(

i

10,0e0,0R,RL,L One electron only - Coulomb blockade

eze

ezyz

zyxy

yxx

)(

)(

RLRLRL ,, EE RL EE

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Matrix calculusMatrix calculus

pσΑσ

00

0

0

00

,0

0

,

e

z

y

x

Apσ

pAσ 1s

stationary solution

eLLzLLL,LL0,0LLL )2(2)(2nΙ eee

L2R

22RL

2RL

L )(4)2(

2I

e

1

RLRL

RLL

1

2

1

2

2I

eeweak coupling to the leads

simplification for

T=0, αR=βL=0

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Dynamical disorderDynamical disorder

Sources of dynamical disorder• phonon field• fluctuations of impurities• defects of the lattice

Model - two-level fluctuator (TLF)• the defect switches randomly

between two discrete states D

• its dynamics is governed by dichotomous Markov noise with correlation time τ=1/2γ

PPP

PPP

1)t(,0)t(,1)t( 2

x)t(2xbx)t(ax)t(

cx)t(bxax

cx)t(bax

dt

d

dt

d

dt

d

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Perturbed systemPerturbed system

surrounding

L,T

R,T

ER

VR

VL

=

J

EL

LRRL))t((

000RRELLE)t(H

HHHH)t(HH

102

1

RLS

RLSRSLS

Assumption:Fluctuator varries slower thanrelaxation processes in the leads

pσΑσ

0000

000

000

0000

,

0

0

0

0

,

00

0

0

00

,0

0

,

1

111

e

z

y

x

1

0

000

e

z

y

x

0

Apσ

Apσ

IΑΑ

ΑΑΑ

p

pp

201

10

1

0

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Current in the presence of TLFCurrent in the presence of TLF

slow fluctuator limit 0 LL

II)(I)(II2

110L10L2

10L

fast fluctuator limit )(II 0LL

L

0L0 II

4

4L D

NIstationary current (exact but cumbersome)

further simplifications•weak coupling to the leads•T=0

two cases:1. tuned =02. detuned ≠0

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Stationary current for =0Stationary current for =0

L=0.2L=0.4L=0.6L=0.8 aL=0.01

L=0.2L=0.4L=0.6L=0.8 aL=0.001

aL=0.001aL=0.005aL=0.010aL=0.015

1=0.5

estimation of the position of minimum

111

2 0

21

20

Resonant decreasing of the current

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Stationary current for ≠0Stationary current for ≠0

=0.00=0.05=0.10=0.151=0.5al.=0.01

=1.0=0.8=0.6=0.4=0.21=0.5al.=0.01

4

22

Resonant increasing of the current

estimation of the position of maximum

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What next?What next?

Characteristic of the current• coherency of the process• spectral properties of the current

Beyond the applied approximations• detailed (quantum) description of the fluctuator • detailed treatment of coupling to the leads• two electrons transport – weak Coulomb repulsion

Related problems• stochastic perturbation of energy levels • multilevel quantum dots• three- or multi- wells semiconductor structures

The aim of research

Optimal control of charge transportthrough semiconductor heterostructures

Page 13: CHARGE TRANSPORT THROUGH A DOUBLE QUANTUM DOT IN THE PRESENCE  OF DYNAMICAL DISORDER

Department of Quantum Mechanics Seminar13

20 April 2004

Division of Open Systems Dynamics

The EndThe End