circuits & devices lab manual
DESCRIPTION
LAbmanual for circuits and devicesTRANSCRIPT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
1
CIRCUITS AND DEVICES LABORATORY
LABORATORY MANUAL
Prepared By
MrsSSINDHUJA BANU
Assistant Professor
Department of ECE
Sri Shakthi Institute of Engineering and Technology
Coimbatore ndash 641062
Approved By
MrsSBhavani
Head of the Department
Department of ECE
Sri Shakthi Institute of Engineering and Technology
Coimbatore ndash 641062
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
2
CIRCUIT DIAGRAM
KIRCHOFFrsquoS VOLTAGE LAW
KIRCHOFFrsquoS CURRENT LAW
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
3
1 VERIFICATION OF KIRCHOFFrsquoS VOLTAGE LAW AND
KIRCHOFFrsquoS CURRENT LAW
AIM To experimentally verify
a) Kirchoffrsquos Voltage Law ( KVL ) and
b) Kirchoffrsquos Current Law ( KCL )
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 1KΩ 3
3 Potentiometer (Linear) 1KΩ 3
4 Ammeter (0-30)mA 4
5 Voltmeter (0-30)V 4
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
4
OBSERVATION
KIRCHOFFrsquoS VOLTAGE LAW
SNO Input
voltage
(V)
Voltage (V) Total Voltage
V (V)
V1 V2 V3
KIRCHOFFrsquoS CURRENT LAW
SNO Input
voltage
(V)
Current (mA) Total Current I
(mA)
I1 I2
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
5
KIRCHOFFrsquoS CURRENT LAW (KCL)
The algebraic sum of current flowing through a node is zero At a junction or node
the sum of current entering a node is equal to sum of current leaving the node
Mathematically
When applying KCL the current directions (entering or leaving a node) are based on
the assumed directions of the currents
Also need to decide whether currents entering the node are positive or negative
this dictates the sign of the currents leaving the node
As long all assumptions are consistent the final result will reflect the actual current
directions in the circuit
KIRCHOFFrsquoS VOLTAGE LAW (KVL)
The algebraic sum of all voltages around any closed loop is zero
Equivalently The sum of the voltage rises around a closed loop is equal to the sum of
the voltage drops around the loop
Mathematically
Voltage polarities are based on assumed polarities
If assumptions are consistent the final results will reflect the actual polarities
Σ voltage drops = Σ voltage rises
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
6
PROCEDURE
KIRCHOFFrsquoS VOLTAGE LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure the voltage drop across each resistor using voltmeters for each and every
step of input voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of potential differences around a closed
loop is zero
KIRCHOFFrsquoS CURRENT LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure current through resistors using ammeters for each and every step of input
voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of currents flowing through a node is
zero
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
7
SAMPLE VIVA QUESTIONS
1 What is a bread board
2 What do you mean by active and passive components Give example
3 What is meant by Unilateral and bilateral elements
4 What is a resistor Types of resistors
5 How can you find the value of a given resistor or capacitor (use colour codes)
6 What is a capacitor
7 State Ohms Law
8 State Kirchoffrsquos Current Law
9 State Kirchoffrsquos Voltage Law
10 Two resistors with equal value ldquoRrdquo are connected in
(a) series (b) parallel
What is the equivalent resistance in each of these
11 Two capacitors with equal value ldquoCrdquo are connected in
(a) series (b) parallel
What is the equivalent capacitance in each of these
RESULT
Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are
verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
8
THEVENINrsquoS THEOREM
CIRCUIT DIAGRAM
To find Vth
To find Rth
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
9
2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS
THEOREM
AIM To experimentally verify
a) Theveninrsquos Theorem and
b) Nortonrsquos Theorem
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 10KΩ 1
3 Ammeter (0-30)mA 1
4 Voltmeter (0-30)V 1
5 Breadboard 1
6 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
10
Theveninrsquos equivalent circuit (To find IL)
OBSERVATION
VERIFICATION OF THEVENINrsquoS THEOREM
SNo
Input
voltage
V
Vth
(V)
Rth
(Ω)
IL(mA)
Theoretical
= (Vth Rth + RL ) Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
11
Theveninrsquos Theorem
Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned offrdquo
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source series resistor and a series load
This theorem is the one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage
4) Open circuit the current source and short circuit the voltage source to find the
Theveninrsquos Resistance across the load terminal
5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
2
CIRCUIT DIAGRAM
KIRCHOFFrsquoS VOLTAGE LAW
KIRCHOFFrsquoS CURRENT LAW
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
3
1 VERIFICATION OF KIRCHOFFrsquoS VOLTAGE LAW AND
KIRCHOFFrsquoS CURRENT LAW
AIM To experimentally verify
a) Kirchoffrsquos Voltage Law ( KVL ) and
b) Kirchoffrsquos Current Law ( KCL )
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 1KΩ 3
3 Potentiometer (Linear) 1KΩ 3
4 Ammeter (0-30)mA 4
5 Voltmeter (0-30)V 4
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
4
OBSERVATION
KIRCHOFFrsquoS VOLTAGE LAW
SNO Input
voltage
(V)
Voltage (V) Total Voltage
V (V)
V1 V2 V3
KIRCHOFFrsquoS CURRENT LAW
SNO Input
voltage
(V)
Current (mA) Total Current I
(mA)
I1 I2
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
5
KIRCHOFFrsquoS CURRENT LAW (KCL)
The algebraic sum of current flowing through a node is zero At a junction or node
the sum of current entering a node is equal to sum of current leaving the node
Mathematically
When applying KCL the current directions (entering or leaving a node) are based on
the assumed directions of the currents
Also need to decide whether currents entering the node are positive or negative
this dictates the sign of the currents leaving the node
As long all assumptions are consistent the final result will reflect the actual current
directions in the circuit
KIRCHOFFrsquoS VOLTAGE LAW (KVL)
The algebraic sum of all voltages around any closed loop is zero
Equivalently The sum of the voltage rises around a closed loop is equal to the sum of
the voltage drops around the loop
Mathematically
Voltage polarities are based on assumed polarities
If assumptions are consistent the final results will reflect the actual polarities
Σ voltage drops = Σ voltage rises
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
6
PROCEDURE
KIRCHOFFrsquoS VOLTAGE LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure the voltage drop across each resistor using voltmeters for each and every
step of input voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of potential differences around a closed
loop is zero
KIRCHOFFrsquoS CURRENT LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure current through resistors using ammeters for each and every step of input
voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of currents flowing through a node is
zero
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
7
SAMPLE VIVA QUESTIONS
1 What is a bread board
2 What do you mean by active and passive components Give example
3 What is meant by Unilateral and bilateral elements
4 What is a resistor Types of resistors
5 How can you find the value of a given resistor or capacitor (use colour codes)
6 What is a capacitor
7 State Ohms Law
8 State Kirchoffrsquos Current Law
9 State Kirchoffrsquos Voltage Law
10 Two resistors with equal value ldquoRrdquo are connected in
(a) series (b) parallel
What is the equivalent resistance in each of these
11 Two capacitors with equal value ldquoCrdquo are connected in
(a) series (b) parallel
What is the equivalent capacitance in each of these
RESULT
Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are
verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
8
THEVENINrsquoS THEOREM
CIRCUIT DIAGRAM
To find Vth
To find Rth
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
9
2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS
THEOREM
AIM To experimentally verify
a) Theveninrsquos Theorem and
b) Nortonrsquos Theorem
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 10KΩ 1
3 Ammeter (0-30)mA 1
4 Voltmeter (0-30)V 1
5 Breadboard 1
6 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
10
Theveninrsquos equivalent circuit (To find IL)
OBSERVATION
VERIFICATION OF THEVENINrsquoS THEOREM
SNo
Input
voltage
V
Vth
(V)
Rth
(Ω)
IL(mA)
Theoretical
= (Vth Rth + RL ) Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
11
Theveninrsquos Theorem
Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned offrdquo
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source series resistor and a series load
This theorem is the one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage
4) Open circuit the current source and short circuit the voltage source to find the
Theveninrsquos Resistance across the load terminal
5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
3
1 VERIFICATION OF KIRCHOFFrsquoS VOLTAGE LAW AND
KIRCHOFFrsquoS CURRENT LAW
AIM To experimentally verify
a) Kirchoffrsquos Voltage Law ( KVL ) and
b) Kirchoffrsquos Current Law ( KCL )
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 1KΩ 3
3 Potentiometer (Linear) 1KΩ 3
4 Ammeter (0-30)mA 4
5 Voltmeter (0-30)V 4
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
4
OBSERVATION
KIRCHOFFrsquoS VOLTAGE LAW
SNO Input
voltage
(V)
Voltage (V) Total Voltage
V (V)
V1 V2 V3
KIRCHOFFrsquoS CURRENT LAW
SNO Input
voltage
(V)
Current (mA) Total Current I
(mA)
I1 I2
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
5
KIRCHOFFrsquoS CURRENT LAW (KCL)
The algebraic sum of current flowing through a node is zero At a junction or node
the sum of current entering a node is equal to sum of current leaving the node
Mathematically
When applying KCL the current directions (entering or leaving a node) are based on
the assumed directions of the currents
Also need to decide whether currents entering the node are positive or negative
this dictates the sign of the currents leaving the node
As long all assumptions are consistent the final result will reflect the actual current
directions in the circuit
KIRCHOFFrsquoS VOLTAGE LAW (KVL)
The algebraic sum of all voltages around any closed loop is zero
Equivalently The sum of the voltage rises around a closed loop is equal to the sum of
the voltage drops around the loop
Mathematically
Voltage polarities are based on assumed polarities
If assumptions are consistent the final results will reflect the actual polarities
Σ voltage drops = Σ voltage rises
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
6
PROCEDURE
KIRCHOFFrsquoS VOLTAGE LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure the voltage drop across each resistor using voltmeters for each and every
step of input voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of potential differences around a closed
loop is zero
KIRCHOFFrsquoS CURRENT LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure current through resistors using ammeters for each and every step of input
voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of currents flowing through a node is
zero
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
7
SAMPLE VIVA QUESTIONS
1 What is a bread board
2 What do you mean by active and passive components Give example
3 What is meant by Unilateral and bilateral elements
4 What is a resistor Types of resistors
5 How can you find the value of a given resistor or capacitor (use colour codes)
6 What is a capacitor
7 State Ohms Law
8 State Kirchoffrsquos Current Law
9 State Kirchoffrsquos Voltage Law
10 Two resistors with equal value ldquoRrdquo are connected in
(a) series (b) parallel
What is the equivalent resistance in each of these
11 Two capacitors with equal value ldquoCrdquo are connected in
(a) series (b) parallel
What is the equivalent capacitance in each of these
RESULT
Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are
verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
8
THEVENINrsquoS THEOREM
CIRCUIT DIAGRAM
To find Vth
To find Rth
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
9
2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS
THEOREM
AIM To experimentally verify
a) Theveninrsquos Theorem and
b) Nortonrsquos Theorem
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 10KΩ 1
3 Ammeter (0-30)mA 1
4 Voltmeter (0-30)V 1
5 Breadboard 1
6 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
10
Theveninrsquos equivalent circuit (To find IL)
OBSERVATION
VERIFICATION OF THEVENINrsquoS THEOREM
SNo
Input
voltage
V
Vth
(V)
Rth
(Ω)
IL(mA)
Theoretical
= (Vth Rth + RL ) Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
11
Theveninrsquos Theorem
Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned offrdquo
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source series resistor and a series load
This theorem is the one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage
4) Open circuit the current source and short circuit the voltage source to find the
Theveninrsquos Resistance across the load terminal
5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
4
OBSERVATION
KIRCHOFFrsquoS VOLTAGE LAW
SNO Input
voltage
(V)
Voltage (V) Total Voltage
V (V)
V1 V2 V3
KIRCHOFFrsquoS CURRENT LAW
SNO Input
voltage
(V)
Current (mA) Total Current I
(mA)
I1 I2
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
5
KIRCHOFFrsquoS CURRENT LAW (KCL)
The algebraic sum of current flowing through a node is zero At a junction or node
the sum of current entering a node is equal to sum of current leaving the node
Mathematically
When applying KCL the current directions (entering or leaving a node) are based on
the assumed directions of the currents
Also need to decide whether currents entering the node are positive or negative
this dictates the sign of the currents leaving the node
As long all assumptions are consistent the final result will reflect the actual current
directions in the circuit
KIRCHOFFrsquoS VOLTAGE LAW (KVL)
The algebraic sum of all voltages around any closed loop is zero
Equivalently The sum of the voltage rises around a closed loop is equal to the sum of
the voltage drops around the loop
Mathematically
Voltage polarities are based on assumed polarities
If assumptions are consistent the final results will reflect the actual polarities
Σ voltage drops = Σ voltage rises
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
6
PROCEDURE
KIRCHOFFrsquoS VOLTAGE LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure the voltage drop across each resistor using voltmeters for each and every
step of input voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of potential differences around a closed
loop is zero
KIRCHOFFrsquoS CURRENT LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure current through resistors using ammeters for each and every step of input
voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of currents flowing through a node is
zero
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
7
SAMPLE VIVA QUESTIONS
1 What is a bread board
2 What do you mean by active and passive components Give example
3 What is meant by Unilateral and bilateral elements
4 What is a resistor Types of resistors
5 How can you find the value of a given resistor or capacitor (use colour codes)
6 What is a capacitor
7 State Ohms Law
8 State Kirchoffrsquos Current Law
9 State Kirchoffrsquos Voltage Law
10 Two resistors with equal value ldquoRrdquo are connected in
(a) series (b) parallel
What is the equivalent resistance in each of these
11 Two capacitors with equal value ldquoCrdquo are connected in
(a) series (b) parallel
What is the equivalent capacitance in each of these
RESULT
Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are
verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
8
THEVENINrsquoS THEOREM
CIRCUIT DIAGRAM
To find Vth
To find Rth
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
9
2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS
THEOREM
AIM To experimentally verify
a) Theveninrsquos Theorem and
b) Nortonrsquos Theorem
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 10KΩ 1
3 Ammeter (0-30)mA 1
4 Voltmeter (0-30)V 1
5 Breadboard 1
6 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
10
Theveninrsquos equivalent circuit (To find IL)
OBSERVATION
VERIFICATION OF THEVENINrsquoS THEOREM
SNo
Input
voltage
V
Vth
(V)
Rth
(Ω)
IL(mA)
Theoretical
= (Vth Rth + RL ) Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
11
Theveninrsquos Theorem
Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned offrdquo
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source series resistor and a series load
This theorem is the one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage
4) Open circuit the current source and short circuit the voltage source to find the
Theveninrsquos Resistance across the load terminal
5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
5
KIRCHOFFrsquoS CURRENT LAW (KCL)
The algebraic sum of current flowing through a node is zero At a junction or node
the sum of current entering a node is equal to sum of current leaving the node
Mathematically
When applying KCL the current directions (entering or leaving a node) are based on
the assumed directions of the currents
Also need to decide whether currents entering the node are positive or negative
this dictates the sign of the currents leaving the node
As long all assumptions are consistent the final result will reflect the actual current
directions in the circuit
KIRCHOFFrsquoS VOLTAGE LAW (KVL)
The algebraic sum of all voltages around any closed loop is zero
Equivalently The sum of the voltage rises around a closed loop is equal to the sum of
the voltage drops around the loop
Mathematically
Voltage polarities are based on assumed polarities
If assumptions are consistent the final results will reflect the actual polarities
Σ voltage drops = Σ voltage rises
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
6
PROCEDURE
KIRCHOFFrsquoS VOLTAGE LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure the voltage drop across each resistor using voltmeters for each and every
step of input voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of potential differences around a closed
loop is zero
KIRCHOFFrsquoS CURRENT LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure current through resistors using ammeters for each and every step of input
voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of currents flowing through a node is
zero
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
7
SAMPLE VIVA QUESTIONS
1 What is a bread board
2 What do you mean by active and passive components Give example
3 What is meant by Unilateral and bilateral elements
4 What is a resistor Types of resistors
5 How can you find the value of a given resistor or capacitor (use colour codes)
6 What is a capacitor
7 State Ohms Law
8 State Kirchoffrsquos Current Law
9 State Kirchoffrsquos Voltage Law
10 Two resistors with equal value ldquoRrdquo are connected in
(a) series (b) parallel
What is the equivalent resistance in each of these
11 Two capacitors with equal value ldquoCrdquo are connected in
(a) series (b) parallel
What is the equivalent capacitance in each of these
RESULT
Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are
verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
8
THEVENINrsquoS THEOREM
CIRCUIT DIAGRAM
To find Vth
To find Rth
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
9
2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS
THEOREM
AIM To experimentally verify
a) Theveninrsquos Theorem and
b) Nortonrsquos Theorem
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 10KΩ 1
3 Ammeter (0-30)mA 1
4 Voltmeter (0-30)V 1
5 Breadboard 1
6 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
10
Theveninrsquos equivalent circuit (To find IL)
OBSERVATION
VERIFICATION OF THEVENINrsquoS THEOREM
SNo
Input
voltage
V
Vth
(V)
Rth
(Ω)
IL(mA)
Theoretical
= (Vth Rth + RL ) Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
11
Theveninrsquos Theorem
Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned offrdquo
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source series resistor and a series load
This theorem is the one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage
4) Open circuit the current source and short circuit the voltage source to find the
Theveninrsquos Resistance across the load terminal
5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
6
PROCEDURE
KIRCHOFFrsquoS VOLTAGE LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure the voltage drop across each resistor using voltmeters for each and every
step of input voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of potential differences around a closed
loop is zero
KIRCHOFFrsquoS CURRENT LAW
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Measure current through resistors using ammeters for each and every step of input
voltage
4) Tabulate the readings
5) Verify the result whether the algebraic sum of currents flowing through a node is
zero
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
7
SAMPLE VIVA QUESTIONS
1 What is a bread board
2 What do you mean by active and passive components Give example
3 What is meant by Unilateral and bilateral elements
4 What is a resistor Types of resistors
5 How can you find the value of a given resistor or capacitor (use colour codes)
6 What is a capacitor
7 State Ohms Law
8 State Kirchoffrsquos Current Law
9 State Kirchoffrsquos Voltage Law
10 Two resistors with equal value ldquoRrdquo are connected in
(a) series (b) parallel
What is the equivalent resistance in each of these
11 Two capacitors with equal value ldquoCrdquo are connected in
(a) series (b) parallel
What is the equivalent capacitance in each of these
RESULT
Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are
verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
8
THEVENINrsquoS THEOREM
CIRCUIT DIAGRAM
To find Vth
To find Rth
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
9
2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS
THEOREM
AIM To experimentally verify
a) Theveninrsquos Theorem and
b) Nortonrsquos Theorem
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 10KΩ 1
3 Ammeter (0-30)mA 1
4 Voltmeter (0-30)V 1
5 Breadboard 1
6 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
10
Theveninrsquos equivalent circuit (To find IL)
OBSERVATION
VERIFICATION OF THEVENINrsquoS THEOREM
SNo
Input
voltage
V
Vth
(V)
Rth
(Ω)
IL(mA)
Theoretical
= (Vth Rth + RL ) Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
11
Theveninrsquos Theorem
Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned offrdquo
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source series resistor and a series load
This theorem is the one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage
4) Open circuit the current source and short circuit the voltage source to find the
Theveninrsquos Resistance across the load terminal
5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
7
SAMPLE VIVA QUESTIONS
1 What is a bread board
2 What do you mean by active and passive components Give example
3 What is meant by Unilateral and bilateral elements
4 What is a resistor Types of resistors
5 How can you find the value of a given resistor or capacitor (use colour codes)
6 What is a capacitor
7 State Ohms Law
8 State Kirchoffrsquos Current Law
9 State Kirchoffrsquos Voltage Law
10 Two resistors with equal value ldquoRrdquo are connected in
(a) series (b) parallel
What is the equivalent resistance in each of these
11 Two capacitors with equal value ldquoCrdquo are connected in
(a) series (b) parallel
What is the equivalent capacitance in each of these
RESULT
Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are
verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
8
THEVENINrsquoS THEOREM
CIRCUIT DIAGRAM
To find Vth
To find Rth
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
9
2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS
THEOREM
AIM To experimentally verify
a) Theveninrsquos Theorem and
b) Nortonrsquos Theorem
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 10KΩ 1
3 Ammeter (0-30)mA 1
4 Voltmeter (0-30)V 1
5 Breadboard 1
6 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
10
Theveninrsquos equivalent circuit (To find IL)
OBSERVATION
VERIFICATION OF THEVENINrsquoS THEOREM
SNo
Input
voltage
V
Vth
(V)
Rth
(Ω)
IL(mA)
Theoretical
= (Vth Rth + RL ) Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
11
Theveninrsquos Theorem
Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned offrdquo
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source series resistor and a series load
This theorem is the one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage
4) Open circuit the current source and short circuit the voltage source to find the
Theveninrsquos Resistance across the load terminal
5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
8
THEVENINrsquoS THEOREM
CIRCUIT DIAGRAM
To find Vth
To find Rth
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
9
2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS
THEOREM
AIM To experimentally verify
a) Theveninrsquos Theorem and
b) Nortonrsquos Theorem
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 10KΩ 1
3 Ammeter (0-30)mA 1
4 Voltmeter (0-30)V 1
5 Breadboard 1
6 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
10
Theveninrsquos equivalent circuit (To find IL)
OBSERVATION
VERIFICATION OF THEVENINrsquoS THEOREM
SNo
Input
voltage
V
Vth
(V)
Rth
(Ω)
IL(mA)
Theoretical
= (Vth Rth + RL ) Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
11
Theveninrsquos Theorem
Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned offrdquo
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source series resistor and a series load
This theorem is the one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage
4) Open circuit the current source and short circuit the voltage source to find the
Theveninrsquos Resistance across the load terminal
5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
9
2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS
THEOREM
AIM To experimentally verify
a) Theveninrsquos Theorem and
b) Nortonrsquos Theorem
for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 1
2 Resistors 10KΩ 1
3 Ammeter (0-30)mA 1
4 Voltmeter (0-30)V 1
5 Breadboard 1
6 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
10
Theveninrsquos equivalent circuit (To find IL)
OBSERVATION
VERIFICATION OF THEVENINrsquoS THEOREM
SNo
Input
voltage
V
Vth
(V)
Rth
(Ω)
IL(mA)
Theoretical
= (Vth Rth + RL ) Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
11
Theveninrsquos Theorem
Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned offrdquo
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source series resistor and a series load
This theorem is the one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage
4) Open circuit the current source and short circuit the voltage source to find the
Theveninrsquos Resistance across the load terminal
5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
10
Theveninrsquos equivalent circuit (To find IL)
OBSERVATION
VERIFICATION OF THEVENINrsquoS THEOREM
SNo
Input
voltage
V
Vth
(V)
Rth
(Ω)
IL(mA)
Theoretical
= (Vth Rth + RL ) Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
11
Theveninrsquos Theorem
Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned offrdquo
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source series resistor and a series load
This theorem is the one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage
4) Open circuit the current source and short circuit the voltage source to find the
Theveninrsquos Resistance across the load terminal
5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
11
Theveninrsquos Theorem
Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by
an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where
Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at
the terminals when the independent sources are turned offrdquo
It is a method to reduce a network to an equivalent circuit consisting of a single
voltage source series resistor and a series load
This theorem is the one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across
load terminal for each and every step of input voltage
4) Open circuit the current source and short circuit the voltage source to find the
Theveninrsquos Resistance across the load terminal
5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
12
NORTONrsquoS THEOREM
CIRCUIT DIAGRAM
To find Rth
To find Isc
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
13
THEORY
Nortonrsquos Theorem
Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by
an equivalent circuit consisting of a current source and a parallel resistorrdquo
Any circuit having voltage sources and resistors can be replaced by a single
equivalent circuit consisting of a single current source in parallel with a resistor where the
value of current source is equal to the short circuit current across the output terminals and
the resistance is equal to the resistance seen to the network across the output terminals
This theorem is one of the most extensively used network theorem It is used to
determine the current through or voltage across any one element in a network without going
through solving of a set of network equations
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1) Connections are given as per the circuit diagram using connecting wires
2) Switch on the power supply and set the initial voltage to 5V Increase the input
voltage in steps
3) Short circuit the load terminal and measure the short circuited current (Isc )
4) Open circuit the current source and short circuit the voltage source and find the RN
across the load terminal
5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)
6) Tabulate the readings
7) Calculate IL and verify with the observed value
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
14
Norton equivalent circuit(To find IL)
OBSERVATION
VERIFICATION OF NORTONrsquoS THEOREM
SNo
Input
voltage
V
IN
(mA)
RN
(Ω)
IL(mA)
Theoretical
= (RN RN + RL ) IN Practical
MODEL CALCULATION
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
15
SAMPLE VIVA QUESTIONS
1 What do you mean by an independent source
2 What are dependent sources What are its types
3 Define mesh
4 What is mesh analysis
5 On which law is mesh analysis based
6 What is the equation for determining the number of independent loops in mesh
current method
7 State Theveninrsquos theorem
8 State Nortonrsquos theorem
RESULT
Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
16
SUPERPOSITION THEOREM
WITH BOTH SOURCES
WITH SOURCE 1 ALONE
WITH SOURCE 2 ALONE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
17
3 VERIFICATION OF SUPERPOSITION THEOREM
AIM
To experimentally verify Superposition Theorem for the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Supply (0-30)V 2
2 Resistors 470Ω
330 Ω
2
1
3 Ammeter (0-10)mA 1
4 Breadboard 1
5 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
18
OBSERVATION
S
NO
Supply
voltage
(V)
I1 (when first
source is present)
I2 (when second
source is
present)
I (when both
sources are
present)
T
heo
reti
cal
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Th
eore
tica
l
Pra
ctic
al
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
19
SUPERPOSITION THEOREM
Superposition theorem states that ldquoIn a linear circuit containing several independent sources
sources the current or voltage of a circuit element equals the algebraic sum of the component
voltages or currents produced by the independent sources acting alone
This theorem applies only to independent sources and not to dependent sources It applies only to
find voltages and currents There are two guiding properties of superposition theorem property of
homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an
element is not a linear response Hence it is not possible to apply superposition theorem directly to
determine power associated with an element
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 Switch on the regulated power supply unit and set the voltage required
3 Vary the supply voltage and observe the corresponding ammeter readings (I)
4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the
corresponding ammeter readings(I1)
5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the
corresponding ammeter readings(I2)
6 Compare the measured current values with calculated values
SAMPLE VIVA QUESTIONS
1 State superposition theorem
2 Where can we apply superposition theorem
3 What are the guiding properties of superposition theorem
4 Limitation of superposition theorem
RESULT
Thus the Superposition Theorem is verified experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
20
CIRCUIT DIAGRAM
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
21
4 VERIFICATION OF MAXIMUM POWER TRANSFER AND
RECIPROCITY THEOREMS
AIM
To experimentally verify Maximum power transfer theorem and Reciprocity theorem for
the given electrical network
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Resistor 220Ω 1
3 Ammeter (0-10)mA 1
4 Voltmeter (0-10)V 1
5 Potentiometer 1K Ω 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
22
OBSERVATION
SNO
Load
RL = VL IL Voltage VL (V) Current IL (mA)
Power (W)
P = VL x IL
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
23
Maximum Power Transfer Theorem
THEORY
The maximum power transfer theorem states that to obtain maximum external power
from a source with a finite internal resistance the resistance of the load must be equal to the
resistance of the source as viewed from the output terminals The theorem refersto
maximum power transfer and not maximum efficiency If the resistance of the load is made
larger than the resistance of the source then efficiency is higher since a higher percentage of
the source power is transferred to the load but the magnitude of the load power is lower
since the total circuit resistance goes up
If the load resistance is smaller than the source resistance then most of the power ends
up being dissipated in the source and although the total power dissipated is higher due to a
lower total resistance it turns out that the amount dissipated in the load is reduced
PROCEDURE
1 Connections are given as per the circuit diagram
2 Measure the voltmeter and ammeter readings for different values of RL
3 Calculate the power value PL and plot the graph between RL and PL
4 Verify whether the maximum power is delivered when RL = RS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
24
CIRCUIT DIAGRAM
BEFORE INTERCHANGE
AFTER INTERCHANGE
OBSERVATION
SNO Input voltage
(V)
Current I1 (A)
Before Interchanging
Current I2 (A)
After Interchanging
Theoretical Practical Theoretical Practical
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
25
Reciprocity Theorem
If a voltage source E acting in one branch of a network causes a current I to flow in another
branch of the network then the same voltage source E acting in the second branch would cause an
identical current I to flow in the first branch
Forms of the reciprocity theorems are used in many electromagnetic applications such as
analyzing electrical networks and antenna systems For example reciprocity implies that antennas
work equally well as transmitters or receivers and specifically that an antennas radiation and
receiving patterns are identical
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are given as per the circuit diagram
2 For different supply voltages measure ammeter readings(I1)
3 Interchange voltage and current source
4 Measure the ammeter readings(I2)
5 Verify whether I1 = I2 and compare with the theoretical values
SAMPLE VIVA QUESTIONS
1 State maximum power transfer theorem
2 State the condition for maximum power transfer theorem
3 Limitation of maximum power transfer theorem
4 What is the efficiency of power transfer when max transfer of power occurs
5 State reciprocity theorem
6 Limitation of reciprocity theorem
7 Application of reciprocity theorem
RESULT
Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified
experimentally
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
26
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = fr + (R4πL)
Lower cut-off frequency f1 = fr - (R4πL)
Bandwidth B = f2 - f1 = R(2πL)
Quality factor Q = LωR (or) frBω
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
27
5 FREQUENCY RESPONSE OF SERIES AND PARALLEL
RESONANCE CIRCUITS
AIM
a) To study the frequency response of a series resonance circuit
b) To study the frequency response of a parallel resonance circuit
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 Function Generator (0-1)MHz 1
2 Resistor 1KΏ 1
3 Inductor 300mH 1
4 Capacitor 100nF 1
5 Ammeter (0-500)mA 1
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) To be ensured that all the connections are correct
2) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
28
OBSERVATION
SERIES RESONANCE
S No Frequency f (Hz) Current I (mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
29
Series Resonant Circuit
THEORY
Resonance in AC circuits implies a special frequency determined by the values of the
resistance capacitance and inductance The resonance of a series RLC circuit occurs
when the inductive and capacitive reactances are equal in magnitude but cancel each other
because they are 180 degrees apart in phase In a series RLC circuit there becomes a
frequency point were the inductive reactance of the inductor becomes equal in value to the
capacitive reactance of the capacitor The point at which this occurs is called the Resonant
Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the
Quality factor Q of the circuit Series resonance circuits are one of the most important
circuits used electronics They can be found in various forms in mains AC filters and also
in radio and television sets producing a very selective tuning circuit for the receiving the
different channels
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering
Circuit Analysisrdquo TMH 6th Edition 2002
PROCEDURE
1 Connections are made as per the circuit diagram
2 The function generator is adjusted for sinusoidal input and the voltage is kept
constant at 5V
3 The frequency is varied and the change in current is tabulated for different
frequency input
4 A graph is drawn between frequency along X-Axis and current along Y-Axis to
get bandwidth and resonant frequency
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
30
CIRCUIT DIAGRAM
FORMULAE
fr = 1(2πradic(LC))
I=VR
Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)
12]
Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)
12]
Bandwidth B = f2 - f1 = 1(2πRC) = frQ
Quality factor Q = LωR (or) frBω
MODEL GRAPH OBSERVATION
S No Frequency f
(Hz)
Current I
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
31
Parallel Resonant Circuit
In many ways a parallel resonance circuit is exactly the same as the series resonance
circuit Both circuits have a resonant frequency point The difference this time however is that
a parallel resonance circuit is influenced by the currents flowing through each parallel branch
within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is
used in filter networks to either select or reject AC frequencies Consider the parallel RLC
circuit below At resonance the impedance of the parallel circuit is at its maximum value and
equal to the resistance of the circuit and we can change the circuits frequency response by
changing the value of this resistance Changing the value of R affects the amount of current
that flows through the circuit at resonance if both L and C remain constant
REFERENCES
1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH
(2001)
2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit
Analysisrdquo TMH 6th Edition 2002
SAMPLE VIVA QUESTIONS
1 What do you mean by resonance circuit Types of resonance circuits
2 What is series resonance
3 What is parallel resonance
4 Define selectivity of resonant circuit
5 Define bandwidth of a resonant circuit
6 State the condition for resonance RLC series circuit
7 What is resonant frequency
8 Define quality factor
9 What is tank circuit
10 What are half power frequencies
RESULT
Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant
circuit is determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
32
CIRCUIT DIAGRAM
PN JUNCTION DIODE - FORWARD BIAS
MODEL GRAPH
V-I Characteristics of PN Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
33
6 CHARACTERISTICS OF PN AND ZENER DIODE
AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode
b) To plot the Reverse bias V-I characteristics of a Zener diode
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 PN diode 1N 4007 1
3 Zener diode FZ 62 1
4 Resistors 1KΩ 1
5 Ammeters (0-50)mA (0-500)microA 1 each
6 Voltmeter (0-1)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the diode This may
lead to damage of the diode
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
34
OBSERVATION
Forward bias of PN diode
SNo VF
(V)
IF
(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
35
PN Junction Diode
A PN junction diode is a two terminal device that is polarity sensitive When the
diode is forward biased the diode conducts and allows current to flow through it without any
resistance When the diode is reverse biased the diode does not conduct and no current flows
through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as
a switch either open or closed depending upon the polarity of the voltage placed across it
The ideal diode has zero resistance under forward bias and infinite resistance under reverse
bias
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of PN diode anode is connected to the positive of power supply and
negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (VF) and current flowing through the diode
(IF) for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of PN diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
36
CIRCUIT DIAGRAM
ZENER DIODE - REVERSE BIAS
MODEL GRAPH
V-I Characteristics of Zener Diode
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
37
Zener Diode
When the reverse voltage reaches break down voltage in normal PN junction diode
the current through the junction and the power dissipated at the junction will be high Such
an operation is destructive and the diode gets damaged Whereas diodes can be designed with
adequate power dissipation capabilities to operate in the break down region One such diode
is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found
that the operation of zener diode is same as that of ordinary PN diode under forward biased
condition Whereas under reverse biased condition break down of the junction occurs The
break down voltage depends upon the amount of doping If the diode is heavily doped
depletion layer will be thin and consequently break down occurs at lower reverse voltage
and further the break down voltage is sharp Whereas a lightly doped diode has a higher
break down voltage Thus break down voltage can be selected with the amount of doping
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Forward bias
1) Connections are given as per the circuit diagram using connecting wires
2) For forward bias of Zener diode anode is connected to the positive of power supply
and negative of power supply to cathode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
38
OBSERVATION
Reverse bias of Zener diode
SNo Vr
(V)
Ir
(μA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
39
Reverse bias
1) Connections are given as per the circuit diagram using connecting wires
2) For reverse bias of Zener diode cathode is connected to the positive of power supply
and negative of power supply to anode of diode
3) Switch on the power supply and increase the supply voltage in steps
4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)
for each and every step of input voltage
5) Tabulate the readings and plot the VI characteristics
SAMPLE VIVA QUESTIONS
1 Define Semiconductor
2 What are the 3 semiconductors mostly used in electronics
3 Why Si is mostly used as semiconductor material than Ge
4 Define Doping What are the element types used for doping
5 Define PN junction Draw its VI characteristic
6 Define Depletion Region
7 What is barrier potential
8 What you meant by Bias Types of bias in diode
9 Define zener diode Draw its characteristics curve
10 What happens when reverse breakdown voltage is reached
11 Why zener diode used as a voltage regulator
12 Types of diode breakdown Explain
13 Main difference between PN junction and Zener diode
14 Applications of diodes
RESULT
Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and
Zener Diode is observed and graph is plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
40
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
41
5 CHARACTERISTICS OF CE CONFIGURATION
AIM
To study the input and output characteristics of Bipolar Junction Transistor in Common
Emitter (CE) configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA (0-500)microA 1 each
5 Voltmeter (0-1)V
(0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor All the connections should be correct
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog meters
4) Make sure while selecting the emitter base and collector terminals of transistor
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
42
OBSERVATION
INPUT CHARACTERISTICS
SNo VCE = 1 V VCE = 2 V VCE = 3 V
VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)
OUTPUT CHARACTERISTICS
SNo
IB = 50 μA IB =75 μA IB = 100 μA
VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
43
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Emitter configuration the input is applied between base and emitter and
the output is taken from collector and emitter Here emitter is common to both input and
output and hence the name Common Emitter configuration Input characteristics is obtained
between the input current(IB) and input voltage (VBE) at constant collector-emitter
voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration
the input characteristics resembles a family of forward-biased diode curvesOutput
characteristics are obtained between the output voltage(VCE) and output current(IC) at
constant base current IB in CE configuration It is also called as collector characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
44
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 What is Transistor Draw characteristics of transistor
2 Name the configurations of Transistor (BJT)Explain
3 Which are the regions of operations of transistor How the transistor can be driven
into these regions
4 What is the importance of CE amplifier
5 What is β Give its value
6 Relation between α and β
7 What is early effect
8 What is B and C in BC 107
9 How can you obtain input resistance and output resistance from curves
10 Why CE is the most commonly used transistor configuration
RESULT
Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter
(CE) configuration are studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
45
CIRCUIT DIAGRAM
PIN ASSIGNMENT
E- Emitter
B- Base
C- Collector
MODEL GRAPH
Input Characteristics Output Characteristics
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
46
6 CHARACTERISTICS OF CB CONFIGURATION
AIM
To observe and draw the input and output characteristics of a transistor connected
in Common Base configuration
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply (DC-RPS) (0-30)V 1
2 Transistor BC107 1
3 Resistors 470Ω
100 Ω 1 each
4 Ammeter (0-30)mA (0-500)microA 1 each
5 Voltmeter (0-1)V (0-30)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the transistor This may
lead to damage of the transistor
2) All the connections should be correct
3) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
4) Errors should be avoided while taking the readings from the Analog meters
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
47
OBSERVATION
INPUT CHARACTERISTICS
SNo VCB = 1 V VCB = 2 V VCB = 3 V
VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)
OUTPUT CHARACTERISTICS
SNo
IE = 10mA IE =20mA IE = 30mA
VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
48
SPECIFICATION
BC107
Collector-Base Voltage (IE = 0) = VCBO = 50V
Collector-Emitter Voltage (IB = 0)= VCEO = 45V
Emitter-Base Voltage (IC = 0) = VEBO =6V
Collector Current = IC =100 mA
Total Power Dissipation Ptot = 03W
Storage temperature Tstg = -55 to 175 degC
Maximum operating junction temperature Tj = 175 degC
Maximum collector cut-off current ICBO = 15 nA
THEORY
Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)
semiconductor device and can be operated in three configurations Common Base(CB)
Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and
PNP It consists of two P-N junctions namely emitter junction and collector junction Base-
emitter junction is always forward biased while collector-base junction is always reverse
biased to operate in the active region irrespective of the configuration
In Common Base configuration the input is applied between base and emitter and the
output is taken from base and collector Here base is common to both input and output and
hence the name common base configuration Input characteristics is obtained between the
input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB
configuration Output characteristics are obtained between the output voltage (VCB) and
output current(IC) at constant base current IE in CB configuration It is also called as collector
characteristics
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
49
PROCEDURE
Input Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the input characteristics the output voltage VCE is kept constant 1V
and for different values of VEB note down the values of IE
3 Repeat the above step for VCB = 2V and 3V
4 Tabulate readings and plot the graph between VEB and IE for constant VCB
Output Characteristics
1 Connect the circuit as per the circuit diagram
2 To plot the output characteristics the input current IE is kept constant at 10 mA
and for different values of VCB note down the values of IC
3 Repeat the above step for IE = 20 mA and 30 mA
4 Tabulate readings and plot the graph between VCB and IC for constant IE
SAMPLE VIVA QUESTIONS
1 Why common collector called as emitter follower
2 Define α Give its value
3 Application of CB amplifier
4 What is amplifier
5 Define Biasing
6 What is punch through
7 Characteristics of CB configuration
8 Different ways of transistor breakdown
9 What Si preferred over germanium in the manufacture of semiconductor devices
RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common
Base (CB) configuration were studied and plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
50
CIRCUIT DIAGRAM
PIN ASSIGNMENT
MODEL GRAPH
Drain Characteristics
VDS (vol) VP
VGS = 0V
VGS = -1V
VGS = -2V
IDS
(mA)
Pinch-off region
VBR
where
VP = Pinch-off voltage
VBR=Breakdown voltage
Breakdown
region
Cut-off
region
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
51
AIM
a) To study the characteristics of Junction Field Effect Transistor (JFET) and to
determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and
transconductance(gm)
b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 JFET BFW 10 1
3 Potentiometer 1KΩ 2
4 Ammeter (0-100)mA 1
5 Voltmeter (0-30)V (0-10)V 1 each
6 Breadboard 1
7 Connecting wires As required
PRECAUTIONS
1) While doing the experiment do not exceed the ratings of the FET This may
lead to damage of the FET
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Errors should be avoided while taking the readings from the Analog metersMake
sure while selecting the source drain and gate terminals of transistor
7 CHARACTERISTICS OF JFET AND MOSFET
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
52
Transfer Characteristics
OBSERVATION
Drain Characteristics Transfer characteristics
S
No
VGS = 0V VGS = -1V
VDS
(vol)
ID
(mA)
VDS
(vol)
ID
(mA)
SNo
VDS = 5 V
VGS
(Volts)
ID
(mA
I D(m
A)
VGS (V)
IDSS
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
53
SPECIFICATION
BFW10
Drain-Source voltage = VDS= 30V
Drain-Gate voltage = VGS= 30V
Gate-Source voltage = VGS= 75V
Reverse Gate-Source voltage = VGSR= -30V
Forward Gate Current = IGF=10mA
Total Power Dissipation PD = 300W
Storage temperature Range Tstg = -65 to 150 degC
JFET
JFET is a three terminal device which can be used as an amplifier or switch The
terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the
gate and source (VGS) controls the drain current ID So it is a voltage controlled device
The operation of FET is understood by analyzing the drain characteristics and the
transfer characteristics For drain characteristics the drain current Id is varied with respect to
VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a
gate voltage is applied the depletion region widens and restricts the current flow The
voltage at which the current ID reaches constant saturation level is termed as the Pinch off
voltage To determine the transfer characteristics keep Vds at a constant value and increase
the gate voltage As the gate voltage is increased the channel width decreases and finally
reaches 0 at which the device goes into cut-off state
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
54
CIRCUIT DIAGRAM
PIN ASSIGNMENT
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
55
MOSFET
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal
device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog
circuits) The three terminals are referred to as the Source Gate and Drain terminals The
MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =
0 volts) in discrete transistors Current flow between the source and drain terminals is
controlled by the voltage VGS applied between the gate and source terminals If the gate-to-
source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the
transistors which you will be using in this lab) no current can flow between the source and
the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source
and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the
drain to the source will depend on the potential difference VDS between the drain and the
source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage
is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above
VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
Drain Characteristics
1 Connections are made as per the circuit diagram
2 To obtain the drain characteristics the gate source voltage is kept at a constant value
3 The drain source voltage is increased in steps and the corresponding drain current is
noted The same procedure is repeated for different values of the gate source voltage
4 A graph is drawn between drain current and drain source voltage for constant gate source
voltage
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
56
Transfer Characteristics
1 To obtain the transfer characteristics the drain source voltage is kept constant at a
particular value
2 The value of the gate source voltage is increased in suitable steps and the corresponding
drain current is noted
3 The same procedure is repeated for different values of drain source voltage
4 The graph is drawn between the gate source voltage and drain current for a constant drain
source voltage
5 The value of gate source voltage for which drain current becomes zero is considered as
the pinch off voltage
SAMPLE VIVA QUESTIONS
1 Why is FET known as a unipolar device
2 What are the advantages and disadvantages of JFET over BJT
3 What is a channel
4 Define drain resistance of FET
5 Distinguish between JFET and MOSFET
6 Draw the symbol of JFET and MOSFET
7 What is MOSFET What are the two modes of MOSFET Draw their transfer
characteristics
8 Define pinch-off voltage
9 Applications of MOSFET
RESULT
The characteristics of JFET and MOSFET was determined and the pinch-off voltage and
drain saturation current was determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
57
CIRCUIT DIAGRAM
UJT
PIN DIAGRAM
MODEL GRAPH
IB(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
58
AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)
2 To study the characteristics of Silicon Controlled Rectifier (SCR)
APPARATUS COMPONENTS REQUIRED
SN
O COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power
Supply (DC-RPS) (0-30)V 1
2 UJT 2N2646 1
3 SCR BT151 1
4 Potentiometer 1KΩ 2
5 Ammeter (0-30)mA 1
6 Voltmeter (0-30)V (0-10)V 1 each
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
3) Make sure while selecting the terminals of UJT and SCR
8 CHARACTERISTICS OF UJT AND SCR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
59
OBSERVATION
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
60
SPECIFICATION
2N2646
Emitter-Base2 voltage = -VBE2=30V
Emitter-Base1 saturation voltage = VEB1sat = 35V
Emitter current = IE=2A
Emitter valley point current = IE(V)=6mA
Emitter peak point current = IE(P)=5mA
Junction temperature = Tj=125 degC
UJT
THEORY
A Unijunction Transistor (UJT) is an electronic semiconductor device that has only
one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and
two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two
bases This causes a potential drop along the length of the device Voltage V1 between emitter
and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small
leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB
pn junction is forward biased and the emitter current flows which shows that UJT is ON
Because the base region is very lightly doped the additional current (actually charges in the
base region) reduces the resistance of the portion of the base between the emitter junction
and the B2 terminal This reduction in resistance means that the emitter junction is more
forward biased and so even more current is injected Overall the effect is a negative
resistance at the emitter terminal This is what makes the UJT useful especially in simple
oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the
emitter voltage starts to decrease This is represented by negative slope of the characteristics
which is referred to as the negative resistance region beyond the valley point RB1 reaches
minimum value and this regionVEB proportional to IE
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
61
CIRCUIT DIAGRAM
SCR
PIN DIAGRAM
MODEL GRAPH
BT151
K A G
IH
IAK(microA)
VAK(V)
Reverse Blocking Region
(OFF state)
Reverse Avalanche Region
Forward Avalanche Region
(OFF state)
ON state
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
62
SCR
THEORY
It is a four layer semiconductor device alternately P-type and N-Type silicon It
consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a
gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate
is open no voltage is applied at the gate due to reverse bias of the junction J2 no current
flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to
breakdown When the gate is made positive with respect to cathode J3 junction is forward
biased and J2 is reverse biased Electrons from N-type material move across junction J3
towards gate while holes from P-type material moves across junction J3 towards cathode So
gate current starts flowing which increases anode current Increase in anode current results in
J2 break down and SCR conducts heavily
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are made as per the circuit diagram with correct polarity provision given
to the circuit from the regulated power supply
2 By keeping the gate current zero the anode voltage is varied and corresponding anode
current is noted
3 By varying the gate current at different level the above step is repeated
4 When the SCR is fired then the gate current is made zero and the anode current is
reduced and at which the SCR is turned off is noted (called holding current)
5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
63
OBSERVATION
UJT
SCR
SNO VBB = 1V VBB = 2V VBB = 3V
VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)
SNo
IG = microA
VAK(V) IA(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
64
SAMPLE VIVA QUESTIONS
1 What is SCR Draw the two transistor model
2 Define holding curent
3 Define latching current
4 Applications of SCR
5 Why SCR is called so
6 Why SCR turns ON at lower anode potential when gate current is applied
7 Electrical equivalent circuit of UJT
8 Define negative resistance region
9 Applications of UJT
10 Define intrinsic stand-off ratio
11 What is interbase resistance of UJT
12 How can we use UJT to trigger SCR
13 What is forward operating region of SCR
RESULT
The characteristics of UJT and SCR are observed and the values latching and holding
current are determined
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
65
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNO Voltage(V) Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
66
AIM
To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 DIAC Sb32 1
3 TRIAC BT136 1
4 Resistor 1 KΩ 2
5 Ammeter (0-30)mA (0-100)mA 1 each
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
9 CHARACTERISTICS OF DIAC AND TRIAC
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
67
DIAC
THEORY
The DIAC is basically a two terminal device It is a parallel inverse combination of
semiconductor layers that permits triggering in either direction The DIAC is extensively
used as a triggering device for the TRIAC circuits When MT1 is positive with respect to
MT2 and the applied voltage is less than the break down voltage the device will not conduct
A small amount of the leakage current will flow through the device due to the drift of
electron and holes in the depletion layer This current is not sufficient to turnndashon the device
The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on
the resistance decreases and the current increases to a larger value which is limited by the
load impedance The voltage drop across the device during the conduction is above 3V
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT1 terminal is made positive with respect to MT2
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT2 terminal is made positive with respect to MT1
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
68
CIRCUIT DIAGRAM
MODE 1
MODE 2
MODEL GRAPH
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
69
TRIAC
The TRIAC is basically a three terminal device It behaves as two inverse-parallel
connected SCRs with a single gate terminal TRIAC can be made to conduct in either
direction The characteristics of TRIAC is such that when MT2is positive with respect to
MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly
when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of
a negative gate voltage However a negative gate voltage can also trigger the TRIAC when
MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative
The TRIAC is defined as operating in one of the four quadrants Normally it is operated in
either quadrant I or quadrant III
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
PROCEDURE
1 Connections are given as per the circuit diagram
2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a
positive gate voltage is applied
3 Now vary the regulated power supply voltage in regular steps and note down the
corresponding values of current and voltage
4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a
positive gate voltage is applied
5 Repeat the step 3
6 Plot the graph for voltage Vs current
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
70
OBSERVATION
SNo
Mode 1 Mode 2
TRIAC
Voltage(V)
TRIAC
Current(mA)
TRIAC
Voltage(V)
TRIAC
Current(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
71
SAMPLE VIVA QUESTIONS
1 Define thyristor
2 What is a DIAC
3 How the DIAC is driven into cut-off
4 List the applications of DIAC
5 What is a TRIAC
6 Explain the operation of TRIAC
7 How can you tigger a DIAC
8 How can you trigger a TRIAC
9 List the applications of TRIAC
10 Compare SCR with TRIAC
RESULT
Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is
plotted
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
72
PHOTODIODE
CIRCUIT DIAGRAM
MODEL GRAPH
OBSERVATION
SNo Distance(cm) I(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
73
AIM To determine the characteristics of photodiode and phototransistor and to plot its
characteristics
APPARATUS COMPONENTS REQUIRED
SNO COMPONENTS SPECIFICATION QUANTITY
1 DC Regulated Power Supply
(DC-RPS) (0-30)V 1
2 Photodiode 1
3 Phototransistor 1
4 Resistor 1 KΩ 68 KΩ 1 each
5 Ammeter (0-10)mA 1
6 Voltmeter (0-30)V 1
7 Breadboard 1
8 Connecting wires As required
PRECAUTIONS
1) All the connections should be correct Errors should be avoided while taking the
readings from the Analog meters
2) Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram
11 CHARACTERISTICS OF PHOTODIODE AND
PHOTOTRANSISTOR
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
74
PHOTOTRANSISTOR
CIRCUI DIAGRAM
MODEL GRAPH
OBSERVATION
SNo
VCE(V)
IC(mA)
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
75
Photodiode
The diodes which are designed to be sensitive to illumination are known as
photodiode When a pn junction is reverse biased small reverse saturation current flows due
to thermally generated holes and electrons being swept across the junction as minority
carriers Increasing the junction temperature generates more holes-electron pairs and so the
minority carrier current is increased The same effect occurs if the junction is illuminated
Hole-electron pairs are generated by the incident light energy and minority charge carriers
are swept across the junction to produce a reverse current flow Increasing the junction
illumination increases the number of charge carriers generated and thus increases the level of
reverse current
Phototransistor
A phototransistor is similar to an ordinary BJT except that its collector-base
junction is constructed like a photodiode Instead of a base current the input to the transistor
is in the form of illumination at the junction In the phototransistor the collector-base leakage
current is proportional to the collector-base illumination This results in Ic also being
proportional to the illumination level For a given mount of illumination on a very small area
the phototransistor provides a much larger output current than that available from
photodiode
REFERENCES
1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press
5th
Edition (2008)
2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI
2008
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn
Circuits and Devices Lab
MrsSSindhuja Banu
Assistant Professor Dept of ECE
76
PROCEDURE
1 Connections are given as per the circuit diagram
2 Maintain a certain distance between the bulb and the device
3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb
and device
4 A graph is plotted for varying values of distances and current
5 The above steps are repeated for the phototransistor
SAMPLE VIVA QUESTIONS
1 What is photodiode Mention its advantage
2 What are the applications of photodiode
3 What is phototransistor
4 Advantages and disadvantages of phototransistor
5 List the applications of phototransistor
6 Define photoresistor
RESULT
Thus the characteristics of photodiode and phototransistor were determined and their
characteristics graph was drawn