circuits & devices lab manual

76
Circuits and Devices Lab Mrs.S.Sindhuja Banu Assistant Professor, Dept. of ECE 1 CIRCUITS AND DEVICES LABORATORY LABORATORY MANUAL Prepared By, Mrs.S.SINDHUJA BANU, Assistant Professor, Department of ECE, Sri Shakthi Institute of Engineering and Technology, Coimbatore 641062. Approved By, Mrs.S.Bhavani, Head of the Department, Department of ECE, Sri Shakthi Institute of Engineering and Technology, Coimbatore 641062.

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Page 1: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

1

CIRCUITS AND DEVICES LABORATORY

LABORATORY MANUAL

Prepared By

MrsSSINDHUJA BANU

Assistant Professor

Department of ECE

Sri Shakthi Institute of Engineering and Technology

Coimbatore ndash 641062

Approved By

MrsSBhavani

Head of the Department

Department of ECE

Sri Shakthi Institute of Engineering and Technology

Coimbatore ndash 641062

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

2

CIRCUIT DIAGRAM

KIRCHOFFrsquoS VOLTAGE LAW

KIRCHOFFrsquoS CURRENT LAW

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

3

1 VERIFICATION OF KIRCHOFFrsquoS VOLTAGE LAW AND

KIRCHOFFrsquoS CURRENT LAW

AIM To experimentally verify

a) Kirchoffrsquos Voltage Law ( KVL ) and

b) Kirchoffrsquos Current Law ( KCL )

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 1KΩ 3

3 Potentiometer (Linear) 1KΩ 3

4 Ammeter (0-30)mA 4

5 Voltmeter (0-30)V 4

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

4

OBSERVATION

KIRCHOFFrsquoS VOLTAGE LAW

SNO Input

voltage

(V)

Voltage (V) Total Voltage

V (V)

V1 V2 V3

KIRCHOFFrsquoS CURRENT LAW

SNO Input

voltage

(V)

Current (mA) Total Current I

(mA)

I1 I2

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

5

KIRCHOFFrsquoS CURRENT LAW (KCL)

The algebraic sum of current flowing through a node is zero At a junction or node

the sum of current entering a node is equal to sum of current leaving the node

Mathematically

When applying KCL the current directions (entering or leaving a node) are based on

the assumed directions of the currents

Also need to decide whether currents entering the node are positive or negative

this dictates the sign of the currents leaving the node

As long all assumptions are consistent the final result will reflect the actual current

directions in the circuit

KIRCHOFFrsquoS VOLTAGE LAW (KVL)

The algebraic sum of all voltages around any closed loop is zero

Equivalently The sum of the voltage rises around a closed loop is equal to the sum of

the voltage drops around the loop

Mathematically

Voltage polarities are based on assumed polarities

If assumptions are consistent the final results will reflect the actual polarities

Σ voltage drops = Σ voltage rises

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

6

PROCEDURE

KIRCHOFFrsquoS VOLTAGE LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure the voltage drop across each resistor using voltmeters for each and every

step of input voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of potential differences around a closed

loop is zero

KIRCHOFFrsquoS CURRENT LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure current through resistors using ammeters for each and every step of input

voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of currents flowing through a node is

zero

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

7

SAMPLE VIVA QUESTIONS

1 What is a bread board

2 What do you mean by active and passive components Give example

3 What is meant by Unilateral and bilateral elements

4 What is a resistor Types of resistors

5 How can you find the value of a given resistor or capacitor (use colour codes)

6 What is a capacitor

7 State Ohms Law

8 State Kirchoffrsquos Current Law

9 State Kirchoffrsquos Voltage Law

10 Two resistors with equal value ldquoRrdquo are connected in

(a) series (b) parallel

What is the equivalent resistance in each of these

11 Two capacitors with equal value ldquoCrdquo are connected in

(a) series (b) parallel

What is the equivalent capacitance in each of these

RESULT

Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are

verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

8

THEVENINrsquoS THEOREM

CIRCUIT DIAGRAM

To find Vth

To find Rth

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

9

2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS

THEOREM

AIM To experimentally verify

a) Theveninrsquos Theorem and

b) Nortonrsquos Theorem

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 10KΩ 1

3 Ammeter (0-30)mA 1

4 Voltmeter (0-30)V 1

5 Breadboard 1

6 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

10

Theveninrsquos equivalent circuit (To find IL)

OBSERVATION

VERIFICATION OF THEVENINrsquoS THEOREM

SNo

Input

voltage

V

Vth

(V)

Rth

(Ω)

IL(mA)

Theoretical

= (Vth Rth + RL ) Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

11

Theveninrsquos Theorem

Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by

an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where

Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at

the terminals when the independent sources are turned offrdquo

It is a method to reduce a network to an equivalent circuit consisting of a single

voltage source series resistor and a series load

This theorem is the one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across

load terminal for each and every step of input voltage

4) Open circuit the current source and short circuit the voltage source to find the

Theveninrsquos Resistance across the load terminal

5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 2: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

2

CIRCUIT DIAGRAM

KIRCHOFFrsquoS VOLTAGE LAW

KIRCHOFFrsquoS CURRENT LAW

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

3

1 VERIFICATION OF KIRCHOFFrsquoS VOLTAGE LAW AND

KIRCHOFFrsquoS CURRENT LAW

AIM To experimentally verify

a) Kirchoffrsquos Voltage Law ( KVL ) and

b) Kirchoffrsquos Current Law ( KCL )

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 1KΩ 3

3 Potentiometer (Linear) 1KΩ 3

4 Ammeter (0-30)mA 4

5 Voltmeter (0-30)V 4

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

4

OBSERVATION

KIRCHOFFrsquoS VOLTAGE LAW

SNO Input

voltage

(V)

Voltage (V) Total Voltage

V (V)

V1 V2 V3

KIRCHOFFrsquoS CURRENT LAW

SNO Input

voltage

(V)

Current (mA) Total Current I

(mA)

I1 I2

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

5

KIRCHOFFrsquoS CURRENT LAW (KCL)

The algebraic sum of current flowing through a node is zero At a junction or node

the sum of current entering a node is equal to sum of current leaving the node

Mathematically

When applying KCL the current directions (entering or leaving a node) are based on

the assumed directions of the currents

Also need to decide whether currents entering the node are positive or negative

this dictates the sign of the currents leaving the node

As long all assumptions are consistent the final result will reflect the actual current

directions in the circuit

KIRCHOFFrsquoS VOLTAGE LAW (KVL)

The algebraic sum of all voltages around any closed loop is zero

Equivalently The sum of the voltage rises around a closed loop is equal to the sum of

the voltage drops around the loop

Mathematically

Voltage polarities are based on assumed polarities

If assumptions are consistent the final results will reflect the actual polarities

Σ voltage drops = Σ voltage rises

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

6

PROCEDURE

KIRCHOFFrsquoS VOLTAGE LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure the voltage drop across each resistor using voltmeters for each and every

step of input voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of potential differences around a closed

loop is zero

KIRCHOFFrsquoS CURRENT LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure current through resistors using ammeters for each and every step of input

voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of currents flowing through a node is

zero

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

7

SAMPLE VIVA QUESTIONS

1 What is a bread board

2 What do you mean by active and passive components Give example

3 What is meant by Unilateral and bilateral elements

4 What is a resistor Types of resistors

5 How can you find the value of a given resistor or capacitor (use colour codes)

6 What is a capacitor

7 State Ohms Law

8 State Kirchoffrsquos Current Law

9 State Kirchoffrsquos Voltage Law

10 Two resistors with equal value ldquoRrdquo are connected in

(a) series (b) parallel

What is the equivalent resistance in each of these

11 Two capacitors with equal value ldquoCrdquo are connected in

(a) series (b) parallel

What is the equivalent capacitance in each of these

RESULT

Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are

verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

8

THEVENINrsquoS THEOREM

CIRCUIT DIAGRAM

To find Vth

To find Rth

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

9

2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS

THEOREM

AIM To experimentally verify

a) Theveninrsquos Theorem and

b) Nortonrsquos Theorem

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 10KΩ 1

3 Ammeter (0-30)mA 1

4 Voltmeter (0-30)V 1

5 Breadboard 1

6 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

10

Theveninrsquos equivalent circuit (To find IL)

OBSERVATION

VERIFICATION OF THEVENINrsquoS THEOREM

SNo

Input

voltage

V

Vth

(V)

Rth

(Ω)

IL(mA)

Theoretical

= (Vth Rth + RL ) Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

11

Theveninrsquos Theorem

Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by

an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where

Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at

the terminals when the independent sources are turned offrdquo

It is a method to reduce a network to an equivalent circuit consisting of a single

voltage source series resistor and a series load

This theorem is the one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across

load terminal for each and every step of input voltage

4) Open circuit the current source and short circuit the voltage source to find the

Theveninrsquos Resistance across the load terminal

5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 3: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

3

1 VERIFICATION OF KIRCHOFFrsquoS VOLTAGE LAW AND

KIRCHOFFrsquoS CURRENT LAW

AIM To experimentally verify

a) Kirchoffrsquos Voltage Law ( KVL ) and

b) Kirchoffrsquos Current Law ( KCL )

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 1KΩ 3

3 Potentiometer (Linear) 1KΩ 3

4 Ammeter (0-30)mA 4

5 Voltmeter (0-30)V 4

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

4

OBSERVATION

KIRCHOFFrsquoS VOLTAGE LAW

SNO Input

voltage

(V)

Voltage (V) Total Voltage

V (V)

V1 V2 V3

KIRCHOFFrsquoS CURRENT LAW

SNO Input

voltage

(V)

Current (mA) Total Current I

(mA)

I1 I2

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

5

KIRCHOFFrsquoS CURRENT LAW (KCL)

The algebraic sum of current flowing through a node is zero At a junction or node

the sum of current entering a node is equal to sum of current leaving the node

Mathematically

When applying KCL the current directions (entering or leaving a node) are based on

the assumed directions of the currents

Also need to decide whether currents entering the node are positive or negative

this dictates the sign of the currents leaving the node

As long all assumptions are consistent the final result will reflect the actual current

directions in the circuit

KIRCHOFFrsquoS VOLTAGE LAW (KVL)

The algebraic sum of all voltages around any closed loop is zero

Equivalently The sum of the voltage rises around a closed loop is equal to the sum of

the voltage drops around the loop

Mathematically

Voltage polarities are based on assumed polarities

If assumptions are consistent the final results will reflect the actual polarities

Σ voltage drops = Σ voltage rises

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

6

PROCEDURE

KIRCHOFFrsquoS VOLTAGE LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure the voltage drop across each resistor using voltmeters for each and every

step of input voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of potential differences around a closed

loop is zero

KIRCHOFFrsquoS CURRENT LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure current through resistors using ammeters for each and every step of input

voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of currents flowing through a node is

zero

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

7

SAMPLE VIVA QUESTIONS

1 What is a bread board

2 What do you mean by active and passive components Give example

3 What is meant by Unilateral and bilateral elements

4 What is a resistor Types of resistors

5 How can you find the value of a given resistor or capacitor (use colour codes)

6 What is a capacitor

7 State Ohms Law

8 State Kirchoffrsquos Current Law

9 State Kirchoffrsquos Voltage Law

10 Two resistors with equal value ldquoRrdquo are connected in

(a) series (b) parallel

What is the equivalent resistance in each of these

11 Two capacitors with equal value ldquoCrdquo are connected in

(a) series (b) parallel

What is the equivalent capacitance in each of these

RESULT

Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are

verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

8

THEVENINrsquoS THEOREM

CIRCUIT DIAGRAM

To find Vth

To find Rth

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

9

2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS

THEOREM

AIM To experimentally verify

a) Theveninrsquos Theorem and

b) Nortonrsquos Theorem

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 10KΩ 1

3 Ammeter (0-30)mA 1

4 Voltmeter (0-30)V 1

5 Breadboard 1

6 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

10

Theveninrsquos equivalent circuit (To find IL)

OBSERVATION

VERIFICATION OF THEVENINrsquoS THEOREM

SNo

Input

voltage

V

Vth

(V)

Rth

(Ω)

IL(mA)

Theoretical

= (Vth Rth + RL ) Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

11

Theveninrsquos Theorem

Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by

an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where

Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at

the terminals when the independent sources are turned offrdquo

It is a method to reduce a network to an equivalent circuit consisting of a single

voltage source series resistor and a series load

This theorem is the one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across

load terminal for each and every step of input voltage

4) Open circuit the current source and short circuit the voltage source to find the

Theveninrsquos Resistance across the load terminal

5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 4: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

4

OBSERVATION

KIRCHOFFrsquoS VOLTAGE LAW

SNO Input

voltage

(V)

Voltage (V) Total Voltage

V (V)

V1 V2 V3

KIRCHOFFrsquoS CURRENT LAW

SNO Input

voltage

(V)

Current (mA) Total Current I

(mA)

I1 I2

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

5

KIRCHOFFrsquoS CURRENT LAW (KCL)

The algebraic sum of current flowing through a node is zero At a junction or node

the sum of current entering a node is equal to sum of current leaving the node

Mathematically

When applying KCL the current directions (entering or leaving a node) are based on

the assumed directions of the currents

Also need to decide whether currents entering the node are positive or negative

this dictates the sign of the currents leaving the node

As long all assumptions are consistent the final result will reflect the actual current

directions in the circuit

KIRCHOFFrsquoS VOLTAGE LAW (KVL)

The algebraic sum of all voltages around any closed loop is zero

Equivalently The sum of the voltage rises around a closed loop is equal to the sum of

the voltage drops around the loop

Mathematically

Voltage polarities are based on assumed polarities

If assumptions are consistent the final results will reflect the actual polarities

Σ voltage drops = Σ voltage rises

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

6

PROCEDURE

KIRCHOFFrsquoS VOLTAGE LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure the voltage drop across each resistor using voltmeters for each and every

step of input voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of potential differences around a closed

loop is zero

KIRCHOFFrsquoS CURRENT LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure current through resistors using ammeters for each and every step of input

voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of currents flowing through a node is

zero

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

7

SAMPLE VIVA QUESTIONS

1 What is a bread board

2 What do you mean by active and passive components Give example

3 What is meant by Unilateral and bilateral elements

4 What is a resistor Types of resistors

5 How can you find the value of a given resistor or capacitor (use colour codes)

6 What is a capacitor

7 State Ohms Law

8 State Kirchoffrsquos Current Law

9 State Kirchoffrsquos Voltage Law

10 Two resistors with equal value ldquoRrdquo are connected in

(a) series (b) parallel

What is the equivalent resistance in each of these

11 Two capacitors with equal value ldquoCrdquo are connected in

(a) series (b) parallel

What is the equivalent capacitance in each of these

RESULT

Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are

verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

8

THEVENINrsquoS THEOREM

CIRCUIT DIAGRAM

To find Vth

To find Rth

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

9

2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS

THEOREM

AIM To experimentally verify

a) Theveninrsquos Theorem and

b) Nortonrsquos Theorem

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 10KΩ 1

3 Ammeter (0-30)mA 1

4 Voltmeter (0-30)V 1

5 Breadboard 1

6 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

10

Theveninrsquos equivalent circuit (To find IL)

OBSERVATION

VERIFICATION OF THEVENINrsquoS THEOREM

SNo

Input

voltage

V

Vth

(V)

Rth

(Ω)

IL(mA)

Theoretical

= (Vth Rth + RL ) Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

11

Theveninrsquos Theorem

Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by

an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where

Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at

the terminals when the independent sources are turned offrdquo

It is a method to reduce a network to an equivalent circuit consisting of a single

voltage source series resistor and a series load

This theorem is the one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across

load terminal for each and every step of input voltage

4) Open circuit the current source and short circuit the voltage source to find the

Theveninrsquos Resistance across the load terminal

5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 5: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

5

KIRCHOFFrsquoS CURRENT LAW (KCL)

The algebraic sum of current flowing through a node is zero At a junction or node

the sum of current entering a node is equal to sum of current leaving the node

Mathematically

When applying KCL the current directions (entering or leaving a node) are based on

the assumed directions of the currents

Also need to decide whether currents entering the node are positive or negative

this dictates the sign of the currents leaving the node

As long all assumptions are consistent the final result will reflect the actual current

directions in the circuit

KIRCHOFFrsquoS VOLTAGE LAW (KVL)

The algebraic sum of all voltages around any closed loop is zero

Equivalently The sum of the voltage rises around a closed loop is equal to the sum of

the voltage drops around the loop

Mathematically

Voltage polarities are based on assumed polarities

If assumptions are consistent the final results will reflect the actual polarities

Σ voltage drops = Σ voltage rises

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

6

PROCEDURE

KIRCHOFFrsquoS VOLTAGE LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure the voltage drop across each resistor using voltmeters for each and every

step of input voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of potential differences around a closed

loop is zero

KIRCHOFFrsquoS CURRENT LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure current through resistors using ammeters for each and every step of input

voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of currents flowing through a node is

zero

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

7

SAMPLE VIVA QUESTIONS

1 What is a bread board

2 What do you mean by active and passive components Give example

3 What is meant by Unilateral and bilateral elements

4 What is a resistor Types of resistors

5 How can you find the value of a given resistor or capacitor (use colour codes)

6 What is a capacitor

7 State Ohms Law

8 State Kirchoffrsquos Current Law

9 State Kirchoffrsquos Voltage Law

10 Two resistors with equal value ldquoRrdquo are connected in

(a) series (b) parallel

What is the equivalent resistance in each of these

11 Two capacitors with equal value ldquoCrdquo are connected in

(a) series (b) parallel

What is the equivalent capacitance in each of these

RESULT

Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are

verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

8

THEVENINrsquoS THEOREM

CIRCUIT DIAGRAM

To find Vth

To find Rth

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

9

2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS

THEOREM

AIM To experimentally verify

a) Theveninrsquos Theorem and

b) Nortonrsquos Theorem

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 10KΩ 1

3 Ammeter (0-30)mA 1

4 Voltmeter (0-30)V 1

5 Breadboard 1

6 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

10

Theveninrsquos equivalent circuit (To find IL)

OBSERVATION

VERIFICATION OF THEVENINrsquoS THEOREM

SNo

Input

voltage

V

Vth

(V)

Rth

(Ω)

IL(mA)

Theoretical

= (Vth Rth + RL ) Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

11

Theveninrsquos Theorem

Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by

an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where

Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at

the terminals when the independent sources are turned offrdquo

It is a method to reduce a network to an equivalent circuit consisting of a single

voltage source series resistor and a series load

This theorem is the one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across

load terminal for each and every step of input voltage

4) Open circuit the current source and short circuit the voltage source to find the

Theveninrsquos Resistance across the load terminal

5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 6: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

6

PROCEDURE

KIRCHOFFrsquoS VOLTAGE LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure the voltage drop across each resistor using voltmeters for each and every

step of input voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of potential differences around a closed

loop is zero

KIRCHOFFrsquoS CURRENT LAW

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Measure current through resistors using ammeters for each and every step of input

voltage

4) Tabulate the readings

5) Verify the result whether the algebraic sum of currents flowing through a node is

zero

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

7

SAMPLE VIVA QUESTIONS

1 What is a bread board

2 What do you mean by active and passive components Give example

3 What is meant by Unilateral and bilateral elements

4 What is a resistor Types of resistors

5 How can you find the value of a given resistor or capacitor (use colour codes)

6 What is a capacitor

7 State Ohms Law

8 State Kirchoffrsquos Current Law

9 State Kirchoffrsquos Voltage Law

10 Two resistors with equal value ldquoRrdquo are connected in

(a) series (b) parallel

What is the equivalent resistance in each of these

11 Two capacitors with equal value ldquoCrdquo are connected in

(a) series (b) parallel

What is the equivalent capacitance in each of these

RESULT

Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are

verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

8

THEVENINrsquoS THEOREM

CIRCUIT DIAGRAM

To find Vth

To find Rth

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

9

2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS

THEOREM

AIM To experimentally verify

a) Theveninrsquos Theorem and

b) Nortonrsquos Theorem

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 10KΩ 1

3 Ammeter (0-30)mA 1

4 Voltmeter (0-30)V 1

5 Breadboard 1

6 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

10

Theveninrsquos equivalent circuit (To find IL)

OBSERVATION

VERIFICATION OF THEVENINrsquoS THEOREM

SNo

Input

voltage

V

Vth

(V)

Rth

(Ω)

IL(mA)

Theoretical

= (Vth Rth + RL ) Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

11

Theveninrsquos Theorem

Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by

an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where

Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at

the terminals when the independent sources are turned offrdquo

It is a method to reduce a network to an equivalent circuit consisting of a single

voltage source series resistor and a series load

This theorem is the one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across

load terminal for each and every step of input voltage

4) Open circuit the current source and short circuit the voltage source to find the

Theveninrsquos Resistance across the load terminal

5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 7: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

7

SAMPLE VIVA QUESTIONS

1 What is a bread board

2 What do you mean by active and passive components Give example

3 What is meant by Unilateral and bilateral elements

4 What is a resistor Types of resistors

5 How can you find the value of a given resistor or capacitor (use colour codes)

6 What is a capacitor

7 State Ohms Law

8 State Kirchoffrsquos Current Law

9 State Kirchoffrsquos Voltage Law

10 Two resistors with equal value ldquoRrdquo are connected in

(a) series (b) parallel

What is the equivalent resistance in each of these

11 Two capacitors with equal value ldquoCrdquo are connected in

(a) series (b) parallel

What is the equivalent capacitance in each of these

RESULT

Thus the Kirchoffrsquos Voltage Law (KVL) and Kirchoffrsquos Current Law (KCL) are

verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

8

THEVENINrsquoS THEOREM

CIRCUIT DIAGRAM

To find Vth

To find Rth

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

9

2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS

THEOREM

AIM To experimentally verify

a) Theveninrsquos Theorem and

b) Nortonrsquos Theorem

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 10KΩ 1

3 Ammeter (0-30)mA 1

4 Voltmeter (0-30)V 1

5 Breadboard 1

6 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

10

Theveninrsquos equivalent circuit (To find IL)

OBSERVATION

VERIFICATION OF THEVENINrsquoS THEOREM

SNo

Input

voltage

V

Vth

(V)

Rth

(Ω)

IL(mA)

Theoretical

= (Vth Rth + RL ) Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

11

Theveninrsquos Theorem

Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by

an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where

Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at

the terminals when the independent sources are turned offrdquo

It is a method to reduce a network to an equivalent circuit consisting of a single

voltage source series resistor and a series load

This theorem is the one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across

load terminal for each and every step of input voltage

4) Open circuit the current source and short circuit the voltage source to find the

Theveninrsquos Resistance across the load terminal

5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 8: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

8

THEVENINrsquoS THEOREM

CIRCUIT DIAGRAM

To find Vth

To find Rth

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

9

2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS

THEOREM

AIM To experimentally verify

a) Theveninrsquos Theorem and

b) Nortonrsquos Theorem

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 10KΩ 1

3 Ammeter (0-30)mA 1

4 Voltmeter (0-30)V 1

5 Breadboard 1

6 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

10

Theveninrsquos equivalent circuit (To find IL)

OBSERVATION

VERIFICATION OF THEVENINrsquoS THEOREM

SNo

Input

voltage

V

Vth

(V)

Rth

(Ω)

IL(mA)

Theoretical

= (Vth Rth + RL ) Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

11

Theveninrsquos Theorem

Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by

an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where

Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at

the terminals when the independent sources are turned offrdquo

It is a method to reduce a network to an equivalent circuit consisting of a single

voltage source series resistor and a series load

This theorem is the one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across

load terminal for each and every step of input voltage

4) Open circuit the current source and short circuit the voltage source to find the

Theveninrsquos Resistance across the load terminal

5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 9: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

9

2 VERIFICATION OF THEVENINrsquoS AND NORTONrsquoS

THEOREM

AIM To experimentally verify

a) Theveninrsquos Theorem and

b) Nortonrsquos Theorem

for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 1

2 Resistors 10KΩ 1

3 Ammeter (0-30)mA 1

4 Voltmeter (0-30)V 1

5 Breadboard 1

6 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

10

Theveninrsquos equivalent circuit (To find IL)

OBSERVATION

VERIFICATION OF THEVENINrsquoS THEOREM

SNo

Input

voltage

V

Vth

(V)

Rth

(Ω)

IL(mA)

Theoretical

= (Vth Rth + RL ) Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

11

Theveninrsquos Theorem

Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by

an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where

Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at

the terminals when the independent sources are turned offrdquo

It is a method to reduce a network to an equivalent circuit consisting of a single

voltage source series resistor and a series load

This theorem is the one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across

load terminal for each and every step of input voltage

4) Open circuit the current source and short circuit the voltage source to find the

Theveninrsquos Resistance across the load terminal

5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 10: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

10

Theveninrsquos equivalent circuit (To find IL)

OBSERVATION

VERIFICATION OF THEVENINrsquoS THEOREM

SNo

Input

voltage

V

Vth

(V)

Rth

(Ω)

IL(mA)

Theoretical

= (Vth Rth + RL ) Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

11

Theveninrsquos Theorem

Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by

an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where

Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at

the terminals when the independent sources are turned offrdquo

It is a method to reduce a network to an equivalent circuit consisting of a single

voltage source series resistor and a series load

This theorem is the one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across

load terminal for each and every step of input voltage

4) Open circuit the current source and short circuit the voltage source to find the

Theveninrsquos Resistance across the load terminal

5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 11: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

11

Theveninrsquos Theorem

Theveninrsquos theorem states that ldquoA linear two-terminal circuit can be replaced by

an equivalent circuit consisting of a voltage source Vth with a series resistor Rth where

Vth is the open-circuit voltage at the terminals and Rth is the equivalent resistance at

the terminals when the independent sources are turned offrdquo

It is a method to reduce a network to an equivalent circuit consisting of a single

voltage source series resistor and a series load

This theorem is the one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Open circuit the load terminal and measure the open circuit voltage (Vth ) across

load terminal for each and every step of input voltage

4) Open circuit the current source and short circuit the voltage source to find the

Theveninrsquos Resistance across the load terminal

5) Draw Theveninrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 12: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

12

NORTONrsquoS THEOREM

CIRCUIT DIAGRAM

To find Rth

To find Isc

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 13: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

13

THEORY

Nortonrsquos Theorem

Nortonrsquos theorem states that ldquoAny two-terminal linear circuit can be replaced by

an equivalent circuit consisting of a current source and a parallel resistorrdquo

Any circuit having voltage sources and resistors can be replaced by a single

equivalent circuit consisting of a single current source in parallel with a resistor where the

value of current source is equal to the short circuit current across the output terminals and

the resistance is equal to the resistance seen to the network across the output terminals

This theorem is one of the most extensively used network theorem It is used to

determine the current through or voltage across any one element in a network without going

through solving of a set of network equations

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1) Connections are given as per the circuit diagram using connecting wires

2) Switch on the power supply and set the initial voltage to 5V Increase the input

voltage in steps

3) Short circuit the load terminal and measure the short circuited current (Isc )

4) Open circuit the current source and short circuit the voltage source and find the RN

across the load terminal

5) Draw Nortonrsquos equivalent circuit and measure the load current (IL)

6) Tabulate the readings

7) Calculate IL and verify with the observed value

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 14: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

14

Norton equivalent circuit(To find IL)

OBSERVATION

VERIFICATION OF NORTONrsquoS THEOREM

SNo

Input

voltage

V

IN

(mA)

RN

(Ω)

IL(mA)

Theoretical

= (RN RN + RL ) IN Practical

MODEL CALCULATION

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 15: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

15

SAMPLE VIVA QUESTIONS

1 What do you mean by an independent source

2 What are dependent sources What are its types

3 Define mesh

4 What is mesh analysis

5 On which law is mesh analysis based

6 What is the equation for determining the number of independent loops in mesh

current method

7 State Theveninrsquos theorem

8 State Nortonrsquos theorem

RESULT

Thus the Theveninrsquos theorem and Nortonrsquos Theorem are verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 16: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

16

SUPERPOSITION THEOREM

WITH BOTH SOURCES

WITH SOURCE 1 ALONE

WITH SOURCE 2 ALONE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 17: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

17

3 VERIFICATION OF SUPERPOSITION THEOREM

AIM

To experimentally verify Superposition Theorem for the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Supply (0-30)V 2

2 Resistors 470Ω

330 Ω

2

1

3 Ammeter (0-10)mA 1

4 Breadboard 1

5 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 18: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

18

OBSERVATION

S

NO

Supply

voltage

(V)

I1 (when first

source is present)

I2 (when second

source is

present)

I (when both

sources are

present)

T

heo

reti

cal

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Th

eore

tica

l

Pra

ctic

al

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 19: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

19

SUPERPOSITION THEOREM

Superposition theorem states that ldquoIn a linear circuit containing several independent sources

sources the current or voltage of a circuit element equals the algebraic sum of the component

voltages or currents produced by the independent sources acting alone

This theorem applies only to independent sources and not to dependent sources It applies only to

find voltages and currents There are two guiding properties of superposition theorem property of

homogeneity or proportionality and the property of additivity Limitation of theorem- Power in an

element is not a linear response Hence it is not possible to apply superposition theorem directly to

determine power associated with an element

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 Switch on the regulated power supply unit and set the voltage required

3 Vary the supply voltage and observe the corresponding ammeter readings (I)

4 Short circuit the voltage source V2 and by varying the voltage source V1 observe the

corresponding ammeter readings(I1)

5 Short circuit the voltage source V1 and by varying the voltage source V2 observe the

corresponding ammeter readings(I2)

6 Compare the measured current values with calculated values

SAMPLE VIVA QUESTIONS

1 State superposition theorem

2 Where can we apply superposition theorem

3 What are the guiding properties of superposition theorem

4 Limitation of superposition theorem

RESULT

Thus the Superposition Theorem is verified experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 20: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

20

CIRCUIT DIAGRAM

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 21: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

21

4 VERIFICATION OF MAXIMUM POWER TRANSFER AND

RECIPROCITY THEOREMS

AIM

To experimentally verify Maximum power transfer theorem and Reciprocity theorem for

the given electrical network

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Resistor 220Ω 1

3 Ammeter (0-10)mA 1

4 Voltmeter (0-10)V 1

5 Potentiometer 1K Ω 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 22: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

22

OBSERVATION

SNO

Load

RL = VL IL Voltage VL (V) Current IL (mA)

Power (W)

P = VL x IL

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 23: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

23

Maximum Power Transfer Theorem

THEORY

The maximum power transfer theorem states that to obtain maximum external power

from a source with a finite internal resistance the resistance of the load must be equal to the

resistance of the source as viewed from the output terminals The theorem refersto

maximum power transfer and not maximum efficiency If the resistance of the load is made

larger than the resistance of the source then efficiency is higher since a higher percentage of

the source power is transferred to the load but the magnitude of the load power is lower

since the total circuit resistance goes up

If the load resistance is smaller than the source resistance then most of the power ends

up being dissipated in the source and although the total power dissipated is higher due to a

lower total resistance it turns out that the amount dissipated in the load is reduced

PROCEDURE

1 Connections are given as per the circuit diagram

2 Measure the voltmeter and ammeter readings for different values of RL

3 Calculate the power value PL and plot the graph between RL and PL

4 Verify whether the maximum power is delivered when RL = RS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 24: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

24

CIRCUIT DIAGRAM

BEFORE INTERCHANGE

AFTER INTERCHANGE

OBSERVATION

SNO Input voltage

(V)

Current I1 (A)

Before Interchanging

Current I2 (A)

After Interchanging

Theoretical Practical Theoretical Practical

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 25: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

25

Reciprocity Theorem

If a voltage source E acting in one branch of a network causes a current I to flow in another

branch of the network then the same voltage source E acting in the second branch would cause an

identical current I to flow in the first branch

Forms of the reciprocity theorems are used in many electromagnetic applications such as

analyzing electrical networks and antenna systems For example reciprocity implies that antennas

work equally well as transmitters or receivers and specifically that an antennas radiation and

receiving patterns are identical

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH (2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are given as per the circuit diagram

2 For different supply voltages measure ammeter readings(I1)

3 Interchange voltage and current source

4 Measure the ammeter readings(I2)

5 Verify whether I1 = I2 and compare with the theoretical values

SAMPLE VIVA QUESTIONS

1 State maximum power transfer theorem

2 State the condition for maximum power transfer theorem

3 Limitation of maximum power transfer theorem

4 What is the efficiency of power transfer when max transfer of power occurs

5 State reciprocity theorem

6 Limitation of reciprocity theorem

7 Application of reciprocity theorem

RESULT

Thus the Maximum Power Transfer Theorem and Reciprocity Theorem is verified

experimentally

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 26: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

26

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = fr + (R4πL)

Lower cut-off frequency f1 = fr - (R4πL)

Bandwidth B = f2 - f1 = R(2πL)

Quality factor Q = LωR (or) frBω

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 27: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

27

5 FREQUENCY RESPONSE OF SERIES AND PARALLEL

RESONANCE CIRCUITS

AIM

a) To study the frequency response of a series resonance circuit

b) To study the frequency response of a parallel resonance circuit

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 Function Generator (0-1)MHz 1

2 Resistor 1KΏ 1

3 Inductor 300mH 1

4 Capacitor 100nF 1

5 Ammeter (0-500)mA 1

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) To be ensured that all the connections are correct

2) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 28: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

28

OBSERVATION

SERIES RESONANCE

S No Frequency f (Hz) Current I (mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 29: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

29

Series Resonant Circuit

THEORY

Resonance in AC circuits implies a special frequency determined by the values of the

resistance capacitance and inductance The resonance of a series RLC circuit occurs

when the inductive and capacitive reactances are equal in magnitude but cancel each other

because they are 180 degrees apart in phase In a series RLC circuit there becomes a

frequency point were the inductive reactance of the inductor becomes equal in value to the

capacitive reactance of the capacitor The point at which this occurs is called the Resonant

Frequency ( ƒr ) The sharpness of the peak is measured quantitatively and is called the

Quality factor Q of the circuit Series resonance circuits are one of the most important

circuits used electronics They can be found in various forms in mains AC filters and also

in radio and television sets producing a very selective tuning circuit for the receiving the

different channels

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering

Circuit Analysisrdquo TMH 6th Edition 2002

PROCEDURE

1 Connections are made as per the circuit diagram

2 The function generator is adjusted for sinusoidal input and the voltage is kept

constant at 5V

3 The frequency is varied and the change in current is tabulated for different

frequency input

4 A graph is drawn between frequency along X-Axis and current along Y-Axis to

get bandwidth and resonant frequency

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 30: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

30

CIRCUIT DIAGRAM

FORMULAE

fr = 1(2πradic(LC))

I=VR

Upper cut-off frequency f2 = (12π)[(12RC)+((12RC)2+1LC)

12]

Lower cut-off frequency f1 = (12π)[(-12RC)+((12RC)2+1LC)

12]

Bandwidth B = f2 - f1 = 1(2πRC) = frQ

Quality factor Q = LωR (or) frBω

MODEL GRAPH OBSERVATION

S No Frequency f

(Hz)

Current I

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 31: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

31

Parallel Resonant Circuit

In many ways a parallel resonance circuit is exactly the same as the series resonance

circuit Both circuits have a resonant frequency point The difference this time however is that

a parallel resonance circuit is influenced by the currents flowing through each parallel branch

within the parallel LC tank circuit A tank circuit is a parallel combination of L and C that is

used in filter networks to either select or reject AC frequencies Consider the parallel RLC

circuit below At resonance the impedance of the parallel circuit is at its maximum value and

equal to the resistance of the circuit and we can change the circuits frequency response by

changing the value of this resistance Changing the value of R affects the amount of current

that flows through the circuit at resonance if both L and C remain constant

REFERENCES

1 Joseph A Edminister Mahmood Nahri ldquoElectric Circuitsrdquo ndash Schaum series TMH

(2001)

2 William H Hayt JV Jack E Kemmerly and Steven M Durbin ldquoEngineering Circuit

Analysisrdquo TMH 6th Edition 2002

SAMPLE VIVA QUESTIONS

1 What do you mean by resonance circuit Types of resonance circuits

2 What is series resonance

3 What is parallel resonance

4 Define selectivity of resonant circuit

5 Define bandwidth of a resonant circuit

6 State the condition for resonance RLC series circuit

7 What is resonant frequency

8 Define quality factor

9 What is tank circuit

10 What are half power frequencies

RESULT

Thus the resonant frequency bandwidth and quality factor of a series and parallel resonant

circuit is determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 32: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

32

CIRCUIT DIAGRAM

PN JUNCTION DIODE - FORWARD BIAS

MODEL GRAPH

V-I Characteristics of PN Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 33: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

33

6 CHARACTERISTICS OF PN AND ZENER DIODE

AIM a) To Plot the Forward bias V-I characteristics of a PN junction diode

b) To plot the Reverse bias V-I characteristics of a Zener diode

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 PN diode 1N 4007 1

3 Zener diode FZ 62 1

4 Resistors 1KΩ 1

5 Ammeters (0-50)mA (0-500)microA 1 each

6 Voltmeter (0-1)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the diode This may

lead to damage of the diode

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 34: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

34

OBSERVATION

Forward bias of PN diode

SNo VF

(V)

IF

(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 35: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

35

PN Junction Diode

A PN junction diode is a two terminal device that is polarity sensitive When the

diode is forward biased the diode conducts and allows current to flow through it without any

resistance When the diode is reverse biased the diode does not conduct and no current flows

through it ie the diode is OFF or providing a blocking function Thus an ideal diode act as

a switch either open or closed depending upon the polarity of the voltage placed across it

The ideal diode has zero resistance under forward bias and infinite resistance under reverse

bias

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of PN diode anode is connected to the positive of power supply and

negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (VF) and current flowing through the diode

(IF) for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of PN diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 36: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

36

CIRCUIT DIAGRAM

ZENER DIODE - REVERSE BIAS

MODEL GRAPH

V-I Characteristics of Zener Diode

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 37: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

37

Zener Diode

When the reverse voltage reaches break down voltage in normal PN junction diode

the current through the junction and the power dissipated at the junction will be high Such

an operation is destructive and the diode gets damaged Whereas diodes can be designed with

adequate power dissipation capabilities to operate in the break down region One such diode

is known as Zener Diode Zener diode is heavily doped than the ordinary diode It is found

that the operation of zener diode is same as that of ordinary PN diode under forward biased

condition Whereas under reverse biased condition break down of the junction occurs The

break down voltage depends upon the amount of doping If the diode is heavily doped

depletion layer will be thin and consequently break down occurs at lower reverse voltage

and further the break down voltage is sharp Whereas a lightly doped diode has a higher

break down voltage Thus break down voltage can be selected with the amount of doping

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Forward bias

1) Connections are given as per the circuit diagram using connecting wires

2) For forward bias of Zener diode anode is connected to the positive of power supply

and negative of power supply to cathode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vf) and current flowing through the diode (If)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 38: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

38

OBSERVATION

Reverse bias of Zener diode

SNo Vr

(V)

Ir

(μA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 39: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

39

Reverse bias

1) Connections are given as per the circuit diagram using connecting wires

2) For reverse bias of Zener diode cathode is connected to the positive of power supply

and negative of power supply to anode of diode

3) Switch on the power supply and increase the supply voltage in steps

4) Measure the voltage drop across diode (Vr) and current flowing through the diode (Ir)

for each and every step of input voltage

5) Tabulate the readings and plot the VI characteristics

SAMPLE VIVA QUESTIONS

1 Define Semiconductor

2 What are the 3 semiconductors mostly used in electronics

3 Why Si is mostly used as semiconductor material than Ge

4 Define Doping What are the element types used for doping

5 Define PN junction Draw its VI characteristic

6 Define Depletion Region

7 What is barrier potential

8 What you meant by Bias Types of bias in diode

9 Define zener diode Draw its characteristics curve

10 What happens when reverse breakdown voltage is reached

11 Why zener diode used as a voltage regulator

12 Types of diode breakdown Explain

13 Main difference between PN junction and Zener diode

14 Applications of diodes

RESULT

Thus the Forward bias And Reverse bias VI characteristics of PN Junction Diode and

Zener Diode is observed and graph is plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 40: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

40

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 41: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

41

5 CHARACTERISTICS OF CE CONFIGURATION

AIM

To study the input and output characteristics of Bipolar Junction Transistor in Common

Emitter (CE) configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA (0-500)microA 1 each

5 Voltmeter (0-1)V

(0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor All the connections should be correct

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog meters

4) Make sure while selecting the emitter base and collector terminals of transistor

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 42: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

42

OBSERVATION

INPUT CHARACTERISTICS

SNo VCE = 1 V VCE = 2 V VCE = 3 V

VBE (V) IB ( A) VBE (V) IB ( A) VBE (V) IB (μA)

OUTPUT CHARACTERISTICS

SNo

IB = 50 μA IB =75 μA IB = 100 μA

VCE (V) IC(mA) VCE (V) IC(mA) VCE (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 43: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

43

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Emitter configuration the input is applied between base and emitter and

the output is taken from collector and emitter Here emitter is common to both input and

output and hence the name Common Emitter configuration Input characteristics is obtained

between the input current(IB) and input voltage (VBE) at constant collector-emitter

voltage(VCE) in CE configurationAs the input is between base-emitter in CE configuration

the input characteristics resembles a family of forward-biased diode curvesOutput

characteristics are obtained between the output voltage(VCE) and output current(IC) at

constant base current IB in CE configuration It is also called as collector characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 44: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

44

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 What is Transistor Draw characteristics of transistor

2 Name the configurations of Transistor (BJT)Explain

3 Which are the regions of operations of transistor How the transistor can be driven

into these regions

4 What is the importance of CE amplifier

5 What is β Give its value

6 Relation between α and β

7 What is early effect

8 What is B and C in BC 107

9 How can you obtain input resistance and output resistance from curves

10 Why CE is the most commonly used transistor configuration

RESULT

Thus the input and output characteristics of Bipolar Junction Transistor in Common Emitter

(CE) configuration are studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 45: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

45

CIRCUIT DIAGRAM

PIN ASSIGNMENT

E- Emitter

B- Base

C- Collector

MODEL GRAPH

Input Characteristics Output Characteristics

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 46: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

46

6 CHARACTERISTICS OF CB CONFIGURATION

AIM

To observe and draw the input and output characteristics of a transistor connected

in Common Base configuration

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply (DC-RPS) (0-30)V 1

2 Transistor BC107 1

3 Resistors 470Ω

100 Ω 1 each

4 Ammeter (0-30)mA (0-500)microA 1 each

5 Voltmeter (0-1)V (0-30)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the transistor This may

lead to damage of the transistor

2) All the connections should be correct

3) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

4) Errors should be avoided while taking the readings from the Analog meters

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 47: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

47

OBSERVATION

INPUT CHARACTERISTICS

SNo VCB = 1 V VCB = 2 V VCB = 3 V

VEB (V) IE ( mA) VEB (V) IE ( A) VEB (V) IE (mA)

OUTPUT CHARACTERISTICS

SNo

IE = 10mA IE =20mA IE = 30mA

VCB (V) IC(mA) VCB (V) IC(mA) VCB (V) IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 48: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

48

SPECIFICATION

BC107

Collector-Base Voltage (IE = 0) = VCBO = 50V

Collector-Emitter Voltage (IB = 0)= VCEO = 45V

Emitter-Base Voltage (IC = 0) = VEBO =6V

Collector Current = IC =100 mA

Total Power Dissipation Ptot = 03W

Storage temperature Tstg = -55 to 175 degC

Maximum operating junction temperature Tj = 175 degC

Maximum collector cut-off current ICBO = 15 nA

THEORY

Bipolar junction transistor (BJT) is a 3 terminal (emitter base collector)

semiconductor device and can be operated in three configurations Common Base(CB)

Common Emitter(CE) Common Collector(CC) BJTrsquos are of two types namely NPN and

PNP It consists of two P-N junctions namely emitter junction and collector junction Base-

emitter junction is always forward biased while collector-base junction is always reverse

biased to operate in the active region irrespective of the configuration

In Common Base configuration the input is applied between base and emitter and the

output is taken from base and collector Here base is common to both input and output and

hence the name common base configuration Input characteristics is obtained between the

input current(IE) and input voltage (VBE) at constant collector-base voltage(VBE) in CB

configuration Output characteristics are obtained between the output voltage (VCB) and

output current(IC) at constant base current IE in CB configuration It is also called as collector

characteristics

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 49: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

49

PROCEDURE

Input Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the input characteristics the output voltage VCE is kept constant 1V

and for different values of VEB note down the values of IE

3 Repeat the above step for VCB = 2V and 3V

4 Tabulate readings and plot the graph between VEB and IE for constant VCB

Output Characteristics

1 Connect the circuit as per the circuit diagram

2 To plot the output characteristics the input current IE is kept constant at 10 mA

and for different values of VCB note down the values of IC

3 Repeat the above step for IE = 20 mA and 30 mA

4 Tabulate readings and plot the graph between VCB and IC for constant IE

SAMPLE VIVA QUESTIONS

1 Why common collector called as emitter follower

2 Define α Give its value

3 Application of CB amplifier

4 What is amplifier

5 Define Biasing

6 What is punch through

7 Characteristics of CB configuration

8 Different ways of transistor breakdown

9 What Si preferred over germanium in the manufacture of semiconductor devices

RESULT Thus the input and output characteristics of Bipolar Junction Transistor in Common

Base (CB) configuration were studied and plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 50: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

50

CIRCUIT DIAGRAM

PIN ASSIGNMENT

MODEL GRAPH

Drain Characteristics

VDS (vol) VP

VGS = 0V

VGS = -1V

VGS = -2V

IDS

(mA)

Pinch-off region

VBR

where

VP = Pinch-off voltage

VBR=Breakdown voltage

Breakdown

region

Cut-off

region

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 51: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

51

AIM

a) To study the characteristics of Junction Field Effect Transistor (JFET) and to

determine the values of pinch-off voltage(Vp) drain saturation current (IDSS) and

transconductance(gm)

b) To study the characteristics of Metal Oxide Semiconductor Field Effect Transistor

(MOSFET)

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 JFET BFW 10 1

3 Potentiometer 1KΩ 2

4 Ammeter (0-100)mA 1

5 Voltmeter (0-30)V (0-10)V 1 each

6 Breadboard 1

7 Connecting wires As required

PRECAUTIONS

1) While doing the experiment do not exceed the ratings of the FET This may

lead to damage of the FET

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Errors should be avoided while taking the readings from the Analog metersMake

sure while selecting the source drain and gate terminals of transistor

7 CHARACTERISTICS OF JFET AND MOSFET

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 52: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

52

Transfer Characteristics

OBSERVATION

Drain Characteristics Transfer characteristics

S

No

VGS = 0V VGS = -1V

VDS

(vol)

ID

(mA)

VDS

(vol)

ID

(mA)

SNo

VDS = 5 V

VGS

(Volts)

ID

(mA

I D(m

A)

VGS (V)

IDSS

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 53: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

53

SPECIFICATION

BFW10

Drain-Source voltage = VDS= 30V

Drain-Gate voltage = VGS= 30V

Gate-Source voltage = VGS= 75V

Reverse Gate-Source voltage = VGSR= -30V

Forward Gate Current = IGF=10mA

Total Power Dissipation PD = 300W

Storage temperature Range Tstg = -65 to 150 degC

JFET

JFET is a three terminal device which can be used as an amplifier or switch The

terminals are Source(S) Gate(G) and Drain(D) In FET the voltage applied between the

gate and source (VGS) controls the drain current ID So it is a voltage controlled device

The operation of FET is understood by analyzing the drain characteristics and the

transfer characteristics For drain characteristics the drain current Id is varied with respect to

VDS for constant VGS Initially Vgs is 0V The current increases with increase in Vds If a

gate voltage is applied the depletion region widens and restricts the current flow The

voltage at which the current ID reaches constant saturation level is termed as the Pinch off

voltage To determine the transfer characteristics keep Vds at a constant value and increase

the gate voltage As the gate voltage is increased the channel width decreases and finally

reaches 0 at which the device goes into cut-off state

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 54: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

54

CIRCUIT DIAGRAM

PIN ASSIGNMENT

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 55: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

55

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a three-terminal

device that can be used as a switch (eg in digital circuits) or as an amplifier (eg in analog

circuits) The three terminals are referred to as the Source Gate and Drain terminals The

MOSFET also has a Body terminal which is usually tied to the source terminal (so that VBS =

0 volts) in discrete transistors Current flow between the source and drain terminals is

controlled by the voltage VGS applied between the gate and source terminals If the gate-to-

source voltage VGS is less than the threshold voltage value VT (eg ~2 Volts for the

transistors which you will be using in this lab) no current can flow between the source and

the drain ndash ie the transistor is OFF if VGS gt VT then current can flow between the source

and the drain ndash ie the transistor is ON In the ON state the current IDS flowing from the

drain to the source will depend on the potential difference VDS between the drain and the

source IDS increases with increasing drain-to-source voltage VDS as long as the drain voltage

is at least VT below the gate voltage ie as long as VGS-VT gt VDS When VDS increases above

VGS-VT IDS saturates at a constant value (ie it no longer increases with increasing VDS)

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

Drain Characteristics

1 Connections are made as per the circuit diagram

2 To obtain the drain characteristics the gate source voltage is kept at a constant value

3 The drain source voltage is increased in steps and the corresponding drain current is

noted The same procedure is repeated for different values of the gate source voltage

4 A graph is drawn between drain current and drain source voltage for constant gate source

voltage

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 56: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

56

Transfer Characteristics

1 To obtain the transfer characteristics the drain source voltage is kept constant at a

particular value

2 The value of the gate source voltage is increased in suitable steps and the corresponding

drain current is noted

3 The same procedure is repeated for different values of drain source voltage

4 The graph is drawn between the gate source voltage and drain current for a constant drain

source voltage

5 The value of gate source voltage for which drain current becomes zero is considered as

the pinch off voltage

SAMPLE VIVA QUESTIONS

1 Why is FET known as a unipolar device

2 What are the advantages and disadvantages of JFET over BJT

3 What is a channel

4 Define drain resistance of FET

5 Distinguish between JFET and MOSFET

6 Draw the symbol of JFET and MOSFET

7 What is MOSFET What are the two modes of MOSFET Draw their transfer

characteristics

8 Define pinch-off voltage

9 Applications of MOSFET

RESULT

The characteristics of JFET and MOSFET was determined and the pinch-off voltage and

drain saturation current was determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 57: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

57

CIRCUIT DIAGRAM

UJT

PIN DIAGRAM

MODEL GRAPH

IB(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 58: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

58

AIM 1 To observe the characteristics of Uni Junction Transistor(UJT)

2 To study the characteristics of Silicon Controlled Rectifier (SCR)

APPARATUS COMPONENTS REQUIRED

SN

O COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power

Supply (DC-RPS) (0-30)V 1

2 UJT 2N2646 1

3 SCR BT151 1

4 Potentiometer 1KΩ 2

5 Ammeter (0-30)mA 1

6 Voltmeter (0-30)V (0-10)V 1 each

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

3) Make sure while selecting the terminals of UJT and SCR

8 CHARACTERISTICS OF UJT AND SCR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 59: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

59

OBSERVATION

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 60: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

60

SPECIFICATION

2N2646

Emitter-Base2 voltage = -VBE2=30V

Emitter-Base1 saturation voltage = VEB1sat = 35V

Emitter current = IE=2A

Emitter valley point current = IE(V)=6mA

Emitter peak point current = IE(P)=5mA

Junction temperature = Tj=125 degC

UJT

THEORY

A Unijunction Transistor (UJT) is an electronic semiconductor device that has only

one junction The UJT Unijunction Transistor (UJT) has three terminals an emitter (E) and

two bases (B1 and B2) The UJT is biased with a positive voltage(VBB) between the two

bases This causes a potential drop along the length of the device Voltage V1 between emitter

and B1 establishes a reverse bias on the pn junction and the emitter current is cut off A small

leakage current flows from B2 to emitter due to minority carriers If V1 is greater than VBB

pn junction is forward biased and the emitter current flows which shows that UJT is ON

Because the base region is very lightly doped the additional current (actually charges in the

base region) reduces the resistance of the portion of the base between the emitter junction

and the B2 terminal This reduction in resistance means that the emitter junction is more

forward biased and so even more current is injected Overall the effect is a negative

resistance at the emitter terminal This is what makes the UJT useful especially in simple

oscillator circuits When the emitter voltage reaches Vp the current starts to increase and the

emitter voltage starts to decrease This is represented by negative slope of the characteristics

which is referred to as the negative resistance region beyond the valley point RB1 reaches

minimum value and this regionVEB proportional to IE

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 61: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

61

CIRCUIT DIAGRAM

SCR

PIN DIAGRAM

MODEL GRAPH

BT151

K A G

IH

IAK(microA)

VAK(V)

Reverse Blocking Region

(OFF state)

Reverse Avalanche Region

Forward Avalanche Region

(OFF state)

ON state

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 62: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

62

SCR

THEORY

It is a four layer semiconductor device alternately P-type and N-Type silicon It

consists of 3 junctions J1 J2 J3 and has three terminals called anode A cathode K and a

gate G J1 and J3 operate in forward direction and J2 operates in reverse direction When gate

is open no voltage is applied at the gate due to reverse bias of the junction J2 no current

flows through R2 and hence SCR is at cut off When anode voltage is increased J2 tends to

breakdown When the gate is made positive with respect to cathode J3 junction is forward

biased and J2 is reverse biased Electrons from N-type material move across junction J3

towards gate while holes from P-type material moves across junction J3 towards cathode So

gate current starts flowing which increases anode current Increase in anode current results in

J2 break down and SCR conducts heavily

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are made as per the circuit diagram with correct polarity provision given

to the circuit from the regulated power supply

2 By keeping the gate current zero the anode voltage is varied and corresponding anode

current is noted

3 By varying the gate current at different level the above step is repeated

4 When the SCR is fired then the gate current is made zero and the anode current is

reduced and at which the SCR is turned off is noted (called holding current)

5 A Graph is plotted using a linear graph sheet with VAK on X-axis and IA in Y-axis

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 63: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

63

OBSERVATION

UJT

SCR

SNO VBB = 1V VBB = 2V VBB = 3V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

SNo

IG = microA

VAK(V) IA(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 64: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

64

SAMPLE VIVA QUESTIONS

1 What is SCR Draw the two transistor model

2 Define holding curent

3 Define latching current

4 Applications of SCR

5 Why SCR is called so

6 Why SCR turns ON at lower anode potential when gate current is applied

7 Electrical equivalent circuit of UJT

8 Define negative resistance region

9 Applications of UJT

10 Define intrinsic stand-off ratio

11 What is interbase resistance of UJT

12 How can we use UJT to trigger SCR

13 What is forward operating region of SCR

RESULT

The characteristics of UJT and SCR are observed and the values latching and holding

current are determined

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 65: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

65

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNO Voltage(V) Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 66: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

66

AIM

To conduct suitable experiment on the given DIAC and TRIAC and to obtain its VI

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 DIAC Sb32 1

3 TRIAC BT136 1

4 Resistor 1 KΩ 2

5 Ammeter (0-30)mA (0-100)mA 1 each

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

9 CHARACTERISTICS OF DIAC AND TRIAC

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 67: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

67

DIAC

THEORY

The DIAC is basically a two terminal device It is a parallel inverse combination of

semiconductor layers that permits triggering in either direction The DIAC is extensively

used as a triggering device for the TRIAC circuits When MT1 is positive with respect to

MT2 and the applied voltage is less than the break down voltage the device will not conduct

A small amount of the leakage current will flow through the device due to the drift of

electron and holes in the depletion layer This current is not sufficient to turnndashon the device

The DIAC will exhibit the negative resistance characteristics When the DIAC is turned on

the resistance decreases and the current increases to a larger value which is limited by the

load impedance The voltage drop across the device during the conduction is above 3V

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT1 terminal is made positive with respect to MT2

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT2 terminal is made positive with respect to MT1

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 68: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

68

CIRCUIT DIAGRAM

MODE 1

MODE 2

MODEL GRAPH

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 69: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

69

TRIAC

The TRIAC is basically a three terminal device It behaves as two inverse-parallel

connected SCRs with a single gate terminal TRIAC can be made to conduct in either

direction The characteristics of TRIAC is such that when MT2is positive with respect to

MT1 the TRIAC can be triggered on by application of a positive gate voltage Similarly

when MT2is negative with respect to MT1 the TRIAC can be triggered on by application of

a negative gate voltage However a negative gate voltage can also trigger the TRIAC when

MT2 is positive and a positive gate voltage can trigger the device when MT2 is negative

The TRIAC is defined as operating in one of the four quadrants Normally it is operated in

either quadrant I or quadrant III

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

PROCEDURE

1 Connections are given as per the circuit diagram

2 For Mode1 operation MT2 terminal is made positive with respect to MT1 and a

positive gate voltage is applied

3 Now vary the regulated power supply voltage in regular steps and note down the

corresponding values of current and voltage

4 For Mode 2 operation MT1 terminal is made positive with respect to MT2 and a

positive gate voltage is applied

5 Repeat the step 3

6 Plot the graph for voltage Vs current

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 70: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

70

OBSERVATION

SNo

Mode 1 Mode 2

TRIAC

Voltage(V)

TRIAC

Current(mA)

TRIAC

Voltage(V)

TRIAC

Current(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 71: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

71

SAMPLE VIVA QUESTIONS

1 Define thyristor

2 What is a DIAC

3 How the DIAC is driven into cut-off

4 List the applications of DIAC

5 What is a TRIAC

6 Explain the operation of TRIAC

7 How can you tigger a DIAC

8 How can you trigger a TRIAC

9 List the applications of TRIAC

10 Compare SCR with TRIAC

RESULT

Thus the VI characteristics of DIAC AND TRIAC are determined and the graph is

plotted

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 72: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

72

PHOTODIODE

CIRCUIT DIAGRAM

MODEL GRAPH

OBSERVATION

SNo Distance(cm) I(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 73: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

73

AIM To determine the characteristics of photodiode and phototransistor and to plot its

characteristics

APPARATUS COMPONENTS REQUIRED

SNO COMPONENTS SPECIFICATION QUANTITY

1 DC Regulated Power Supply

(DC-RPS) (0-30)V 1

2 Photodiode 1

3 Phototransistor 1

4 Resistor 1 KΩ 68 KΩ 1 each

5 Ammeter (0-10)mA 1

6 Voltmeter (0-30)V 1

7 Breadboard 1

8 Connecting wires As required

PRECAUTIONS

1) All the connections should be correct Errors should be avoided while taking the

readings from the Analog meters

2) Do not switch ON the power supply unless you have checked the circuit

connections as per the circuit diagram

11 CHARACTERISTICS OF PHOTODIODE AND

PHOTOTRANSISTOR

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 74: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

74

PHOTOTRANSISTOR

CIRCUI DIAGRAM

MODEL GRAPH

OBSERVATION

SNo

VCE(V)

IC(mA)

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 75: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

75

Photodiode

The diodes which are designed to be sensitive to illumination are known as

photodiode When a pn junction is reverse biased small reverse saturation current flows due

to thermally generated holes and electrons being swept across the junction as minority

carriers Increasing the junction temperature generates more holes-electron pairs and so the

minority carrier current is increased The same effect occurs if the junction is illuminated

Hole-electron pairs are generated by the incident light energy and minority charge carriers

are swept across the junction to produce a reverse current flow Increasing the junction

illumination increases the number of charge carriers generated and thus increases the level of

reverse current

Phototransistor

A phototransistor is similar to an ordinary BJT except that its collector-base

junction is constructed like a photodiode Instead of a base current the input to the transistor

is in the form of illumination at the junction In the phototransistor the collector-base leakage

current is proportional to the collector-base illumination This results in Ic also being

proportional to the illumination level For a given mount of illumination on a very small area

the phototransistor provides a much larger output current than that available from

photodiode

REFERENCES

1 David A Bell ldquoElectronic Devices and Circuitsrdquo Oxford University Press

5th

Edition (2008)

2 Robert Boylestad Louis Nashelsky ldquo Electronic devices and Circuit Theoryrdquo PHI

2008

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn

Page 76: Circuits & Devices Lab Manual

Circuits and Devices Lab

MrsSSindhuja Banu

Assistant Professor Dept of ECE

76

PROCEDURE

1 Connections are given as per the circuit diagram

2 Maintain a certain distance between the bulb and the device

3 Apply a certain value of voltage to the bulb and now vary the distance between the bulb

and device

4 A graph is plotted for varying values of distances and current

5 The above steps are repeated for the phototransistor

SAMPLE VIVA QUESTIONS

1 What is photodiode Mention its advantage

2 What are the applications of photodiode

3 What is phototransistor

4 Advantages and disadvantages of phototransistor

5 List the applications of phototransistor

6 Define photoresistor

RESULT

Thus the characteristics of photodiode and phototransistor were determined and their

characteristics graph was drawn