complementary n-p channel trench mosfet april. 2010. version 2.0 6 magnachip semiconductor ltd. 5 2e...

April. 2010. Version 2.0 MagnaChip Semiconductor Ltd. 1

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Absolute Maximum Ratings (Ta =25oC unless otherwise noted)

Characteristics Symbol Rating

Unit N-Ch P-Ch

Drain-Source Voltage VDSS 30 -30 V

Gate-Source Voltage VGSS ±20 ±20 V

Continuous Drain Current Ta=25

oC

ID 7.2 -6.1 A

Ta=100oC 4.6 -3.8 A

Pulsed Drain Current IDM 30 -30 A

Power Dissipation(1)

Ta=25

oC

PD 2 2

W Ta=100

oC 0.8 0.8

Single Pulse Avalanche Energy(2)

EAS 32 72 mJ

Junction and Storage Temperature Range TJ, Tstg -55~150 oC

Thermal Characteristics

Characteristics Device Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient(Steady-State)(1)

N-Ch RθJA 62.5

oC/W

Thermal Resistance, Junction-to-Case N-Ch RθJC 50

Thermal Resistance, Junction-to-Ambient(Steady-State)(1)

P-Ch RθJA 62.5

Thermal Resistance, Junction-to-Case P-Ch RθJC 50

1(S1)

2(G1) 3(S2)

4(G2)

6(D2) 7(D1)

MDS9652E Complementary N-P Channel Trench MOSFET

General Description The MDS9652E uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability

Features

N-Channel P-Channel

VDS = 30V VDS = -30V ID = 7.2A @ VGS = 10V ID = -6.1A @ VGS = -10V RDS(ON) RDS(ON)

<23m @ VGS = 10V <38m @ VGS = -10V

<30m @ VGS = 4.5V <52m @ VGS = -4.5V Applications

Inverters

General purpose applications

5(D2)

8(D1)

D1

G1

S1

D2

G2

S2


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Ordering Information

Part Number Temp. Range Package Packing RoHS Status

MDS9652EURH -55~150oC SOIC-8L Tape & Reel Halogen Free

N-channel Electrical Characteristics (Ta =25oC unless otherwise noted)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics

Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - V

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.9 3.0

Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - 1.0 μA

Gate Leakage Current IGSS VGS = ±12V, VDS = 0V - - 10

Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 7.2A - 15 23

mΩ VGS = 4.5V, ID = 5.0A - 19 30

Forward Transconductance gFS VDS = 5V, ID = 7.2A - 20 - S

Dynamic Characteristics

Total Gate Charge Qg

VDS = 15V, ID = 7.2A, VGS = 10V

- 12.8 -

nC Gate-Source Charge Qgs - 1.9 -

Gate-Drain Charge Qgd - 2.7 -

Input Capacitance Ciss

VDS = 15V, VGS = 0V, f = 1.0MHz

- 635 -

pF Reverse Transfer Capacitance Crss - 82 -

Output Capacitance Coss - 158 -

Turn-On Delay Time td(on)

VGS = 10V ,VDS = 15V, RL = 2.2Ω, RGEN = 6Ω

- 4.2 -

ns Turn-On Rise Time tr - 23.0 -

Turn-Off Delay Time td(off) - 37.0 -

Turn-Off Fall Time tf - 22.0 -

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 0.75 1.0 V

Body Diode Reverse Recovery Time trr IF = 7.2A, di/dt = 100A/μs

- 17 - ns

Body Diode Reverse Recovery Charge Qrr - 8 - nC

Note :

1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 15V, VGS = 10V


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P-channel Electrical Characteristics (Ta =25oC unless otherwise noted)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics

Drain-Source Breakdown Voltage BVDSS ID = -250μA, VGS = 0V -30 - - V

Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250μA -1.0 -1.9 -3.0

Drain Cut-Off Current IDSS VDS = -24V, VGS = 0V - -1.0 μA

Gate Leakage Current IGSS VGS = ±12V, VDS = 0V - - ±10

Drain-Source ON Resistance RDS(ON) VGS = -10V, ID = -6.1A - 23 38

mΩ VGS = -4.5V, ID = -5.0A - 33 52

Forward Transconductance gFS VDS = -5V, ID = -6.1A - 15 - S

Dynamic Characteristics

Total Gate Charge Qg

VDS = -15V, ID = -6.1A, VGS = -10V

- 25.1 -

nC Gate-Source Charge Qgs - 4.1 -

Gate-Drain Charge Qgd - 4.9 -

Input Capacitance Ciss

VDS = -15V, VGS = 0V, f = 1.0MHz

- 1128 -

pF Reverse Transfer Capacitance Crss - 127 -

Output Capacitance Coss - 218 -

Turn-On Delay Time td(on)

VGS = -10V ,VDS = -15V, RL = 15Ω, RGEN = 6Ω

- 11.6 -

ns Turn-On Rise Time tr - 20.8 -

Turn-Off Delay Time td(off) - 27.6 -

Turn-Off Fall Time tf - 11.6 -

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage VSD IS = -1A, VGS = 0V - -0.75 -1.0 V

Body Diode Reverse Recovery Time trr IF = -6.1A, di/dt = 100A/μs

- 21.0 - ns

Body Diode Reverse Recovery Charge Qrr - 13.5 - nC

Note :

1. Surface mounted RF4 board with 2oz. Copper. 2. Starting TJ = 25°C, L = 1mH, IAS = -12A, VDD = -15V, VGS = -10V


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N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with Temperature

Fig.4 On-Resistance Variation with

Gate to Source Voltage

Fig.6 Body Diode Forward Voltage Variation with Source Current and

Temperature

0 1 2 3 4 50

5

10

15

20

25

30

35

40

10V

5.0V

4.5V 4.0V

3.5V

VGS=3.0V

I D [

A]

VDS

[V]

0 1 2 3 4 50

5

10

15

20

125

*Note ; VDS=5.0V

25

I D [

A]

VGS

[V]

0.0 0.2 0.4 0.6 0.8 1.01E-6

1E-5

1E-4

1E-3

0.01

0.1

1

10

125 25

-IS [

A]

-VSD

[V]

0 5 10 15 20 25 30 35 4010

20

30

40

50

VGS

=4.5V

VGS

=10V

RD

S(O

N) [m

Ω]

ID [A]

2 4 6 8 100

10

20

30

40

50

60

70

125

25

RD

S(O

N) [

mΩ

]

VGS

[V]

-50 -25 0 25 50 75 100 125 1500.6

0.8

1.0

1.2

1.4

1.6

1.8

VGS

=4.5V

ID=5.0A

VGS

=10V

ID=7.2A

RD

S(O

N),

(No

rmalized

)

Dra

in-S

ou

rce O

n-R

esis

tan

ce [

mΩ

]

TJ, Junction Temperature [

oC]


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Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating

Area

Fig.10 Maximum Drain Current

Vs. Ambient Temperature

Fig.11 Transient Thermal Response

Curve

0 2 4 6 8 10 12 140

2

4

6

8

10

* Note ; ID = 7.2A

VG

S [

V]

Qg [nC]

0 5 10 15 20 25 300

50

100

150

200

250

300

350

400

450

500

550

600

650

700

750

800

850

900

Ciss

= Cgs

+ Cgd

(Cds

= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

* Notes ;

1. VGS

= 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Cap

acit

an

ce [

pF

]

VDS

[V]

10-1

100

101

102

10-2

10-1

100

101

102

1s

100 ms

DC

10 ms

1 ms

Operation in This Area

is Limited by R DS(on)

Single Pulse

Rθ ja

=62.5 /W

Ta=25

I D [

A]

VDS

[V]

25 50 75 100 125 1500

1

2

3

4

5

6

7

8

I D [

A]

Ta [ ]

10-5

10-4

10-3

10-2

10-1

100

101

102

103

10-3

10-2

10-1

100

101

0.01

※ Notes :

Duty Factor, D=t1/t

2

PEAK TJ = P

DM * Z

θ Ja * R

θ Ja(t) + T

a

RΘ JA

=62.5 /W

single pulse

D=0.5

0.02

0.2

0.05

0.1

Zθ

ja, N

orm

ali

zed

Th

erm

al

Resp

on

se [

t]

t1, Rectangular Pulse Duration [sec]


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P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Fig.16 Transfer Characteristics

Fig.12 On-Region Characteristics Fig.13 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.14 On-Resistance Variation with Temperature

Fig.15 On-Resistance Variation with

Gate to Source Voltage

Fig.17 Body Diode Forward Voltage Variation with Source Current and

Temperature

0 1 2 3 4 50

5

10

15

20

-10.0V -5.0V-4.5V

-4.0V

-3.5V

VGS

=-3.0V

-ID [

A]

-VDS

[V]

-50 -25 0 25 50 75 100 125 1500.6

0.8

1.0

1.2

1.4

1.6

1.8

VGS

=-10V

ID=-6.1A

VGS

=-4.5V

ID=-5.0A

RD

S(O

N),

(No

rmalized

)

Dra

in-S

ou

rce O

n-R

esis

tan

ce [

mΩ

]

TJ, Junction Temperature [ ]

0.0 0.2 0.4 0.6 0.8 1.01E-4

1E-3

0.01

0.1

1

10

125 25

-IS [

A]

-VSD

[V]

0 5 10 15 20 25 300

10

20

30

40

50

60

70

VGS

=-4.5V

VGS

=-10V

RD

S(O

N) [m

Ω]

-ID [A]

2 3 4 5 6 7 8 9 100

10

20

30

40

50

60

70

80

90

100

*Note ; ID=-6.1A

25

125

RD

S(O

N) [

mΩ

]

-VGS

[V]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00

5

10

15

20

* Note ; VDS

=-5V

12525

-ID [

A]

-VGS

[V]


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Fig.18 Gate Charge Characteristics Fig.19 Capacitance Characteristics

Fig.20 Maximum Safe Operating Area Fig.21 Maximum Drain Current vs.

Ambient Temperature

Fig.22 Transient Thermal Response Curve

0 2 4 6 8 10 12 14 16 18 20 22 24 260

2

4

6

8

10

* Note : ID = -6.1A

-VG

S [

V]

-Qg [nC]

0 5 10 15 20 25 300

100

200

300

400

500

600

700

800

900

1000

1100

1200

1300

1400

1500

Ciss

= Cgs

+ Cgd

(Cds

= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

※ Notes ;

1. VGS

= 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Cap

acit

an

ce [

pF

]

-VDS

[V]

10-1

100

101

102

10-2

10-1

100

101

102

1s

100 ms

DC

10 ms

1 ms

Operation in This Area

is Limited by R DS(on)

Single Pulse

Rθ ja

=62.5 /W

Ta=25

-ID [

A]

-VDS

[V]

10-5

10-4

10-3

10-2

10-1

100

101

102

103

10-2

10-1

100

101

* Notes :

Duty Factor, D=t1/t

2

PEAK TJ = P

DM * Z

θ JC * R

θ JC(t) + T

C

RΘ JA

=62.5 /W

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Zθ

Ja, N

orm

ali

zed

Th

erm

al

Resp

on

se [

t]

t1, Rectangular Pulse Duration [s]

25 50 75 100 125 1500

1

2

3

4

5

6

7

-ID [

A]

Ta [ ]


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Physical Dimensions

8 Leads SOIC

Dimensions are in millimeters unless otherwise specified


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Worldwide Sales Support Locations

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.

complementary n-p channel trench mosfet april. 2010. version 2.0 6 magnachip semiconductor ltd. 5 2e...

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