corvus e band mmic · gaas diode spdt, 76-81 ghz overview co-e1401506 is a spdt schottky diode...
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Corvus E band MMIC
No licence is granted under any patent or any patent rights of Arralis. Information furnished by Arralis is believed to be accurate. No responsibility is assumed by Arralis for its use, nor for any infringements on the rights of other parties that may result for the use of the information herein. All specification are subject to change without notice
product datasheetarralis.com
Features • 76 - 81 GHz
• 3.5 dB Insertion Loss
• 15 dB Isolation
• 10 dB Return Loss (Open or
Closed)
Applications
• Millimetre-wave Imaging• Automotive Radar• High Resolution Radar• Sensing• P2P Communications;short haul/
high capacity/lowinterference links• Medical
CO-E1401506 GaAs Diode SPDT, 76-81 GHz
Overview
CO-E1401506 is a SPDT Schottky diode based switch that covers frequencies from
76GHz to 81GHz with very low loss (3.5dB) when closed and high isolation (15dB)
when open. By using specialist matching circuitry, CO-E1401506 provides an excellent
match to 50ohms, even when the branch arm is open, which allows ease of integration
into complex multipath systems.
All bond pads and the die backside are gold plated. The CO-E1401506 MMIC is
compatible with conventional die attach methods, as well as thermo-compression
and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is provisional and is measured with the chip in a
50 ohm environment and contacted with RF probes.
CO-E1401506 product datasheet www.arralis.com
NotesThe tests indicated have all been performed with 100pF de-coupling capacitors on all Voltage pads.All tests are carried out at 25°C.
ESD (electrostatic discharge) sensitive device. Charged devices and circuit boards can discharge without detection. Although this product features proprietary protection circuitry, damage may occur on devices subjected to ESD. Proper ESD precautions should be taken to avoid performance degradation or loss of functionality.
Specification Overview
Parameter Rating
Control Voltage -2 to +1.5V
RF Power 22 dBm
Storage Temperature −65°C to +175°C
Channel Temperature +175°C
Operating Temperature −40°C to +85°C
Absolute Maximum Ratings
GaAs Diode SPDT, 76-81 GHz
Parameter Min. Typ. Max. Units Notes
Frequency 76 81 GHz
Insertion Loss 3.5 4 dB
Isolation 10 15 dB
Return Loss (Open) 10 dB
Return Loss (Closed) 10 dB
Closed Voltage 0.81 V
Open Voltage -1.2 V
Closed Current 8 mA
Open Current 0 mA
Biased at 0.81V, 8mA closedBiased at -1.2V, 0mA open
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
75.00 76.00 77.00 78.00 79.00 80.00 81.00 82.00 83.00 84.00 85.00
RFOUT1, -1.2V, 0mA (Open)
RFOUT2, -1.2V, 0mA (Open)
Measured Performance Data
GaAs Diode SPDT, 76-81 GHz
CO-E1401506 product datasheet www.arralis.com
Figure 1CO-E1401506Insertion Loss (the other branches open)
Figure 2CO-E1401506Isolation(the other branch closed)
-10.00
-9.00
-8.00
-7.00
-6.00
-5.00
-4.00
-3.00
-2.00
-1.00
0.00
75.00 76.00 77.00 78.00 79.00 80.00 81.00 82.00 83.00 84.00 85.00
RFOUT1, 0.81V, 7.67mA (Closed)
RFOUT2, 0.81V, 7.65mA (Closed)
RF Frequency (GHz)
Inse
rtio
n Lo
ss (d
B)
RF Frequency (GHz)
Isol
atio
n (d
B)
-20.00
-18.00
-16.00
-14.00
-12.00
-10.00
-8.00
-6.00
-4.00
-2.00
0.00
75.00 76.00 77.00 78.00 79.00 80.00 81.00 82.00 83.00 84.00 85.00
RFOUT1, -1.2V, 0mA (Open)
RFOUT2, -1.2V, 0mA (Open)
Measured Performance Data
GaAs Diode SPDT, 76-81 GHz
CO-E1401506 product datasheet www.arralis.com
Figure 3CO-E1401506Closed Port Return Loss(the other branches open)
Figure 4CO-E1401506Open Port Return Loss(the other branch closed)
-35.00
-30.00
-25.00
-20.00
-15.00
-10.00
-5.00
0.00
75.00 76.00 77.00 78.00 79.00 80.00 81.00 82.00 83.00 84.00 85.00
Common Port (one branch closed)
RFOUT1, 0.81V, 7.67mA (Closed)
RFOUT2, 0.81V, 7.65mA (Closed)
RF Frequency (GHz)
Ret
urn
Loss
(dB
)
RF Frequency (GHz)
Ret
urn
Loss
(dB
)
Outline Drawing
CO-E1401506 product datasheet www.arralis.com
Notes1. ALL DIMENSIONS ARE IN UM.
2. RF BOND PADS ARE 86 x 105UM.
3. ALL DC BOND PADS ARE 86 x 83UM.
4. GOLD BACKSIDE METALISATION.
5. BACKSIDE METAL IS GROUND.
6. DIE THICKNESS IS 100UM
GaAs Diode SPDT, 76-81 GHz
Die Packing InformationAll die are delivered using gel-paks unless otherwise requested.
30 30449
83
1950
184032.5
4200
82
82
1840
795.5
86 105
105
105
54
30
86
54
448
CO-E1401506 product datasheet www.arralis.com
Connection Configurations
GaAs Diode SPDT, 76-81 GHz
Name Description
RFIN Common RF input pad. This pad is ac coupled.
RFOUTX RF output pad for branch X. This pad is ac coupled.
DCX This is DC control voltage pad for branch X.
BOTTOM The die backside must be connected to RF/dc ground.
Pad Descriptions
CO-E1401506 SPDT, 76-81 GHz
Pad Descriptions
Name Description
RFIN Common RF input pad. This pad is ac coupled.
RFOUTX RF output pad for branch X. This pad is ac coupled.
DCX This is DC control voltage pad for branch X.
BOTTOM The die backside must be connected to RF/dc ground.
General Notes on Assembly
Die should be mounted on conductive material such as gold-plated metal to provide a good ground and suitable heat sink, if necessary.
1. Attaching the die using Au/Sn preforms is preferable. The Eutectic melt for Au/Sn occurs at
approximately 280oC so the die (plus mount and preform) is initially heated up to 180oC and then
it is heated for approximately 10 seconds to 280oC using a nitrogen heat gun. The device will
survive 10 seconds at this temperature. The static breakdown for GaAs devices is approximately
330oC.
Die should be mounted on conductive material such as gold-plated metal to provide a
good ground and suitable heat sink, if necessary.
1. Attaching the die using Au/Sn preforms is preferable. The Eutectic melt for Au/
Sn occurs at approximately 280oC so the die (plus mount and preform) is initially
heated up to 180oC and then it is heated for approximately 10 seconds to 280oC
using a nitrogen heat gun. The device will survive 10 seconds at this temperature.
The static breakdown for GaAs devices is approximately 330oC.
2. Pure, dry Nitrogen should be used as the heat source.
3. If the devices cannot be lifted/ placed by a vacuum device, then ESD die-lifting
tweezers are preferable.
4. Aluminium wire must not be used.
General Notes on Assembly
CO-E1401506 product datasheet www.arralis.com
GaAs Diode SPDT, 76-81 GHz
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