crystal growth of iii/v semiconductor nanowires kobi greenberg
TRANSCRIPT
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Crystal Growth of III/V Semiconductor Nanowires
Kobi Greenberg
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Metal organic molecular beam epitaxy (MOMBE)
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Future applications of nanowires
Martensson et al
Nanowire LED
Maarten et al
Single photon emitter
Algra et al
Crystal structure engineering
Nanowires as a Biological Interface
Mårtensson et al
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The vapor liquid solid growth mechanism
TMI
420oC
In
P2Au catalyst
InP
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TEM pictures of InP nanowires grown in our lab by the vapor liquid solid method
ZB
WZ
Au
InP
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Two ways to arrange cannon ballsCubic structureHexagonal structure
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Stacking fault formation
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B
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B
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B
Zincblende nanowire Wurzite nanowireWurzite nanowire
With stacking fault
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B
SF
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Limitations of the vapor liquid solid method
• Difficult to eliminate stacking fault • Very sensitive to wafer surface effects
Calahorra, Greenberg et al. nanotechnology 2012
TMI 420oC
In
P2Au catalyst
InP
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The selective area vapor liquid solid growth method
Si3N4
Dalacu et al, Nanotechnology 2009
Au catalyst
TMI
420oC
P2
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TEM pictures of InP nanowires grown in our lab by selective area vapor liquid solid method: no stacking faults
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Advantages of the selective area vapor liquid solid method
• Easy to eliminate stacking fault in InP nanowires
• not sensitive to wafer surface effects
• Predictable growth rate
Si3N4
Au catalyst
TMI420oC
P2
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Fabrication
Wafer cleaning
Si3N4 deposition
Electron sensitive resist coating
Electron beam lithography + development+ BOE
InP<111>B substrate
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Gold evaporation
Lift off
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nanowire heterostuctures: important for device applications
• conventional layers of materials having different lattice constant cannot be grown on top of each other as single crystals.
• Due to their small dimensions, a stack of materials with different lattice constants can be grown as a single crystal
GaP
InGaP
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Heterostructure analysis by EDX and STEM HAADF
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Summary
• Selective area vapor liquid solid is the method of choice for defect free nanowire growth.
• Heterostructures of InP and GaP having 7.7% lattice mismatch were demonstrated.
• Method will be implemented for other materials such as GaAs, GaP,InAs and their heterostuctures.
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