current progress in future opportunities for thin film...
TRANSCRIPT
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Current Progress in FutureOpportunities for Thin Film Solar Cells
Satyen K. DebDirector, Basic Sciences Center
National Renewable Energy LaboratoryGolden, CO 80401
Presented at the Workshop on Physics for Energy SourcesInternational Center for Theoretical Physics (ICTP)
Trieste, ItalyOctober 17–29, 2005
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Photovoltaics is Solar Electricity
Good for oureconomy and
energyindependence
Good for our environment
Clean and abundantenergy for the21st Century
DOE PV Program Goal:U.S. leadership intechnology, industry,and markets
High-technologymanufacturing
jobs
02803203
Solar can supply all electricity for the U.S.using this area (100 x 100 mi.) in the SW
OR
Distributed applicationsthroughout the U.S. (vacantland, building-integrated, etc.)
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World PV Cell/Module Production (MW)
1989 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 20010
200
400
600
800
Rest of world
Europe
Japan
U.S.
2002
1000
1200
761.1
2003
40.2 46.5 55.4 60.1 69.4 77.6 88.6125.8
154.9201.3
287.7
390.5
561.8
2004
57.9
1195.4
Source: Paul Maycock, PV News, March 2005
034016413
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PV Module Production Experience(or Learning) Curve
0.1
1.0
10.0
100.0
0 1 10 100 1,000 10,000 100,000
Cumulative Production (MWp)
PV
Mo
du
leP
rice
(2003$/W
p)
1976
2003
90%
80%
70%
75 GW2020 @25% growth
New, unofficial,
thin film learning
curve starting at
lower price and
volume, but same
slopeBINGO!
80% Learning Curve: Moduleprice decreases by 20% for everydoubling of cumulative production
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Why Thin Films ?
• Substantial Cost Advantage
• Lower Consumption of Materials
• Ease of Manufacturing Large Area Devices
• Fewer Processing Steps
• Wider Selection of Materials
• Easier integration of Monolithic Devices
• Greater Tolerance on Materials Quality
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Thin-Film Solar Cells, Y. Hamakawa, Springer
Absorption Coefficient of Chalcopyrite CompoundsTogether with Other Semiconductors Applied in PV
1.0 1.5 2.0 2.5
105
104
103
102
101
Abso
rptio
n c
onst
ant (c
m-1
)
Photon energy (eV)
CuInSe2
InP
GaAs
c-Si
Cu2S
CuInS2a-Si:H 10-5
10-4
10-3
10-2
10-1
Abso
rptio
n le
ngth
(cm)
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Thin Film Solar Cells - Present & Future
(1) First Generation Thin Film Solar Cells
• Amorphous Silicon Alloys
• CdS/CdTe Thin Films
• CIGS/CdS Thin Films
(2) Next Generation Thin Film Solar Cells
• Dye-sensitized TiO2 Thin Film
• Crystalline Si Thin Films
• Microcrystalline Si
• GaAs Thin Film
• Organic Solar Cells
• Novel Ternary and Multinary Compound
(3) Novel Concepts for High Efficiency Devices
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Amorphous Si:H Solar Cell
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h�
Triple-Junction a-Si:H Solar Cell: (a) Substrateand (b) Superstrate Configuration
Glass
SnO2:(In, F, …) ITO
ZnO:(Al, Ga, …)p �c-Si:Hi a-SiC:Hn Si:Hp �c-Si:H
i a-SiGe:H
n Si:H
i a-SiGe:H
n Si:HZnO:(Al, Ga, …)
Al, Ag Stainlesssteel
p �c-Si:H
h�
Pro
cess
ing s
equence
Pro
cess
ing s
equence
(a)
(b)
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Triple-Junction Cell Structure
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Deposition Recipes for MW-PCVD and RF-PCVD
Recipe for the
low pressure MW-PCVD
MW power: 100~1000 W
Pressure: 0.1~30 mTorr
TS: 200~400°C
Deposition rate: >4.0 nm/s
Source gases: SiH4, GeH4, and H2
Thin-Film Solar Cells, Y. Hamakawa, Springer
034016358
Recipe for the RF-PCVD
RF power: 0.1~10 Torr
Pressure: 0.1~30 mTorr
TS: 100~400°C
Deposition rate: >0.1 nm/s
Source gases: SiH4, H2, PH3, and BF3
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Stabilized Efficiency of a Few Representativea-Si:H-Based Solar Cells and Modules
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Efficiency status: Cell 13.0(stabilized) Submodule 10.4
Module 7–8Commercial 5–7
• Engineered “solution” for degradation: thinabsorber layers and multijunctions
• Extensive fundamental research, leveragedby many other applications
Thin-Film Amorphous Silicon PV—Progress and Status
Key companies: BP Solar, United Solar/ ECD, EPV, IowaThin Films; Sanyo, Kaneka; Phototronics, DunaSolar
• Glass, stainless steel, plastic substrates
• Multi-MW/year in consumer products
• 5 and 10 MW factories for power products operational;many tens of MW in near term
• Unique products for building integration (e.g., roofing,cladding, semi-transparent canopies)
United Solar Systems Corp.
BP Solar
United Solar
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� Improved fundamental understanding:– Metastability (e.g., hydrogen collision
modeland kinetics)
– Role of hydrogen– Alloys with Ge, C, …– Characterization techniques
� Improved cell/module efficiencies; newdevice structures
� Long-term field performance
� Manufacturing throughput and yield — impacton equipment cost
� Novel growth techniques– e.g., hot-wire deposition, VHF plasma– Gas-phase chemistry and control– Nucleation and growth– High-rate deposition (10–100 vs. 1–3 Å/s)– Amorphous to microcrystalline
structures– Low-bandgap (~1 eV) materials
Thin-Film Amorphous Silicon PV—Research Issues and Directions
Advantages of HW-CVD
• Extremely high deposition rates
• High gas utilization
• Better control of [H] in films• More stable films• Lower H2:SiH4 to get �c-Si inclusions• Wide parameter window for quality films
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Key Issues for Efficiency Improvement of a-Si Solar Cells
Physical Process
Efficient guidance of optical energy
Efficiently guided photon confinement
Carrier confinement
Reduction of photogenerated carrier
recombination
Reduction of voltage factor losses
Reduction of series resistance losses
Technical Solution
• Antireflection coating (ARC)
• Multi-energy-gap stacked juntion
• Textured surface treatment
• Use of back-surface-reflection (BSR) effect
• Refractive index arrangement
• Minority carrier mirror effect by heterojunction• Increase of ��-product in the PV active layer
• Film quality improvement by controlling the deposition condition such as
RH, Ts, RF-frequency
• Drift-type effect with p-i-n junction
• Graded-gap PV active layer (bandgap profiling)
• Graded impurity-doping involving back surface field (BSF) effect
• Band profile control of the PV active layer
• Insertion of proper buffer layer in the interface of the p-i and i-n junction
• Optimum design of electrode pattern
• Decrease of transparent conductive oxide (TCO) resistance
• Use of superlattice tunneling junction
Thin-Film Solar Cells, Y. Hamakawa, Springer034016357
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Hydrogen Collision Model
Problem: No experimental evidence forlong-range hydrogen motion.
Solution
Stainless Steel Substrate
a-WO3
200 nm
Laser
a-Si:H 1.3 m�
Difference Raman Spectra
200 300 400 500
-35
0
35
70
(c)
(b)
(a)
Diff
ere
nce
Ram
an S
ignal
Raman Shift (cm-1)
(c)
a-WO3 only
(b)
a-Si:H only
(a)
a-WO3/
a-Si:H
Evidence for Hydrogen insertion from a-Si:H to a-WO3
Deb et al. Appl. Phys. Lett. 77, 2686 (2000)
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Comparative Stability ofa-Si:H and �c-Si:H Solar Cells
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0.0 0.2 0.4
25
20
15
10
5Curr
entdensi
ty(m
A/c
m2)
Voltage (V)0.6 0.8 1.0
0
AM1, 100 mW/cm2
Voc = 0.905 V
Jsc = 18.8 mA/cm2
Fill factor = 73.6%
Efficiency = 12.5%
Incident light
h�
Glass
i a-SiC
i a-Si
n �c-Si
TCOp �c-Si (C)
p a-SiC
ITOAg
Cell PerformanceCharacteristics
Structure andPerformance of a-Si
Double Heterojunction
Thin-Film Solar Cells, Y. Hamakawa, Springer
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UniSolar Roll-to-roll triple-junction a-Sideposition plant of 30 MW annual capacity
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Cadmium Telluride
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SnO2
Glass substrate
Back contact
CdTe
CdS
Back contact
CdTe
ZnxCd1-xS/CdS
Zn2SnO4 (ZTO)
Cd2SnO4 (CTO)
Glass substrate
Typical CdTe Device Structure: (a) Conventionaland (b) Modified Version
(a) (b)
Frontcontact
Frontcontact
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CdTe Thin Film Deposition Technologies
• Sublimation-condensation
• Close-spaced sublimation (CSS)
• Chemical spraying
• Electrodeposition
• Screen printing
• Chemical vapor deposition
• Atomic layer epitaxy
• Sputtering
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Apparatus Used for the Deposition of CdTe bythe CSS Technique
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� Efficiency status: Cell 16.5Module 11.0Commercial 7–9
� Many deposition approaches for >10%efficiency
� Early fundamental scientific and engineeringbase for materials and devices
� ES&H issues studied and under control (e.g.,recycling)—Cd perception issue?
Thin-Film Cadmium Telluride PV—Progress and Status
� Key companies: BP Solar, First Solar;Matsushita; Antec Solar
� ~1 MW/year in consumer products for years
� Successful first-time manufacturing underway:– High-rate vapor transport (vacuum)– Electrodeposition (non-vacuum)– Few tens of MW in near term
� Field testing of large power modules (50–90 W)shows promise
BP Solar
First Solar
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� Film deposition development:– Nucleation and growth– Gas-phase and surface chemistries– Annealing and heat treatment (CdCl2)– Grain growth, native defects, dopants– CdS/CdTe interdiffusion– Alternate transparent conductors and
impacts film growth
Thin-Film Cadmium Telluride PV—Research Issues and Directions
� Front and back contacts– Alternate transparent conductors– Low resistance, stable back contacts– Role of Cu; Cu-free contact strategies?
� Close efficiency gap (cell to module)� Compatibility of manufacturing process steps� Low-cost module packaging for long-term
reliability(>20 years); edge sealants and moisture ingress
� Accelerated module test procedures
As-grown film
Annealed in CdCl2at 450ºC, ~20 mins
AFM images of 0.8 �m film —— 1 �m
10 kWBP Solar
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CdTe Research Issues
• Improved contacts to p-CdTe
• Effective p-type doping of CdTe to improve Voc
• CdTe-alloys that allow device design gradients
• Investigation of materials and device properties allowingultra-thin CdTe layers (to 0.25 micron) while maintaininghigh efficiencies
• Reducing tellurium usage by replacement of telluriumwith other elements while maintaining performance
• Materials Availability, Safety,and Environmental Issues
• Closing Gap Between Small and Large Area Devices
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Module Structure and Processing SequenceUsed by Solar Cells, Inc.
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03540713
Thin Film CdTeSolar Cell Back Contacts
Metals
– Cu
– Au
– Cu/Au
– Ni
– Ni/Al
– Sb/Al
– Sb/Au
Others
– Graphite – Sb2Te3/Metal
– Graphite (Cu, HgTe, Ni2P)– ZnTe: Cu/Metal
– As2Te3/Metal – ZnTe: N/Metal
– Cu2Te/Metal
– Ni2P/Metal
– NiTe2/Metal
– Te/As2Te3/Metal
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First Solar CdTe 25 MWp VaporTransport Manufacturing Line
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CIGS Solar Cell
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Thin Film CISSolar Cell Structure
I-V Curve for a 19.3%Thin Film CIGS Solar Cell
MgF2/ZnO/CdS/CIGS/Mo/glass
16
12
8
4
0
-4-0.6 -0.2 0.2 0.6
Voltage
Curr
ent(m
A) Jsc = 34.6 mA/cm2
Joc = 0.70 V
FF = 0.796
� = 19.3%
MgF2
ITO/ZnO
CdS
CuInGaSe2
Mo
Glass/SS/polymer/foil
Ni/Al
0.1 �m
0.5–1.5 �m
0.03–0.05 �m
1.5–2.0 �m
0.5–1.5 �m
0.05/3 �m
� = 21.1% (14x) � = 19.3%
034016373
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18.8%-Efficient CIGS/CdS/ZnO Solar Cell: (a)Device Structure and (b) Elemental Fluxes and
Substrate Temperature vs Deposition Time
(a) (b)
034016386
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03540717
SEM-Thin Film CIGS Solar Cell
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Thin-Film Copper Indium Diselenide (CIS)PV—Progress and Status
Key companies: Siemens/Shell Solar, GlobalSolar/ITN, ISET, EPV; Wurth Solar; Showa/Shell
• Prototype production started in 1998:– First commercial products (5–40 W)– Efficient, large modules (>12%)– Expansion to multi-MW in near term
• Field testing of modules shows promise;>10 years outdoors, no degradation
Efficiency status: Cell 19.3Module 12.1Commercial >10
Others: Stainless steel substrate 17.5Electrodeposition 15.4With ZnO (no CdS buffer) 15.7Concentrator (14X) 21.5
� Understanding of film growth, microstructures,defects, and device physics
� Reproducible high-efficiency processes
40.8 kWSiemens Solar
Global Solar
03250209
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• Scalability of current processes– Predictive models of materials growth,
devices, and processes– Real-time process controls– Yield and throughput
• New techniques and materials– Non-vacuum approaches– Low-temperature depositions
• Device research and development– Heterojunction vs. homojunction– Role of window materials;
improvements in blue response– Alternate front and back contacts– Higher bandgaps and multijunctions– Device models and characterization
• Theory: Band structures,optoelectronic properties, defectphysics, doping
Electrodeposited CIGSPrecursor Film
Absorber CIGS from Electro-deposited Precursor Film
Thin-Film Copper Indium Diselenide (CIS)PV—Research Issues and Directions
03250210
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CuInSe2-alloys Research Issues
• Understanding materials science of complexcompositions, alloys and gradients
• Understanding the complex properties andinteractions of key interfaces
• Investigation of materials and device propertiesallowing ultra-thin CIS layers (to 0.25 micron) whilemaintaining high efficiencies
• Reducing indium usage by replacement of indium withother elements while maintaining performance
• Investigating low-cost processes, and the science ofsuch processes to establish the control and flexibilityneeded to reach high performance and high yield
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18
16
14
12
10
Eff
icie
ncy (
%)
1.61.51.41.31.21.11.0
Absorber band gap (eV)
Efficiency vs. CIGS Bandgap
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Efficiencies of Cd-Free Buffer Layers inCIGS Solar Cells
034016370
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Stability of Thin Film CIS-Based ModulesFabricated by Siemens Solar, Inc.
034016371
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03540721
Polycrystalline Thin FilmPhotovoltaic Modules
Organization
BP Solar
Wurth Solar
First Solar
Shell Solar - GmbH
Matsushita Battery
Global Solar
Antec Solar
Shell Solar
Showa Shell
* NREL Confirmed; All aperture-area efficiency
Material
CdTe
CIGS
CdTe
CIGSS
CdTe
CIGS
CdTe
CIGSS
CIGS
Area (cm2)
8390
6507
6612
4938
5413
7714
6633
3626
3600
Eff (%)
11.0*
12.2
10.1*
13.1
11.0
7.3*
7.0
12.8*
12.8
Power (W)
92.5*
79.2
67.1*
64.8
59.0
56.8*
46.7
46.5*
44.15
Date
09/01
05/02
12/01
05/03
05/00
03/02
11/01
03/03
05/03
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Dye-Sensitized TiO2 Solar Cell
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Dye Sensitized TiO2 Solar Cell
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Dye-sensitized Nano-structureTiO2 Solar Cells
Advantages• Relatively simple and inexpensive fabrication processes with
production cost potential of ~50¢/Wp
• Demonstrated cell efficiency (h�10%) comparable toconventional amorphous silicon solar cell
• Device constituents (TiO2, dye,electrolyte) are abundant andenvironmentally benign
• Optional color and device transparency leads to multiplicity ofproducts and applications
Disadvantages• Use of liquid electrolyte is not an optimum solution
• Very long-term stability of dyes questionable
• Significantly higher efficiency difficult to achieve
03425923
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03250215
The First U.S.Patents on Dye-Sentised TiO2
Solar CellsIssued to Deb
etal in 1978
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TIC/TIO2
TIC/CdS/TIO2
TIC/CdSe
Relative energydistribution of
solar spectrum
40
30
20
10
0
Qu
an
tum
eff
icie
ncy
(%)
300 400 500
Wavelength (nm)
100
10
1
0.1Q
ua
ntu
me
ffic
ien
cy(%
)
300 380 460
Wavelength (nm)
Bare cell
Bare cellwith NMP+
SpectralSensitization ofTiO2 PEC Cell
03425925
Action Spectra of a Bare Cell andthe Same Cell with NMP+
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03250218
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Research Issues and Directions forDye-TiO2 Solar Cells
• Dynamics of electron transfer processes
• Surface and interface properties
• Charge transport in TiO2 film and electrolytes
• Role of crystal structure and film morphology
• Electrolyte properties and solid electrolytes
• New Dyes and novel approaches to sensitization
• Efficiency enhancement- multi-junction devices
• Degradation mechanisms
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Quantum Dot Sensitized TiO2 Solar Cell
3.2 eV
TiO2
h�
e-
e-e-
e-
e-e-Vph
TransparentTCO
Electrode
electrolyte
PtCounterElectrode
h+
QD
I3-/I-
-Analogous to dye-sensitized TiO2 solar cells-10 to 20 µm film of NC TiO2 (10-30 nm)-Ru dyes � Efficiency ~ 11%
-Advantages of QD’s as sensitizers:-possibility of slowed hot e- cooling-possibility of impact ionization-tunable absorption
TCOelectrode
300 Å TiO2
InP QDs30-60 Å
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0342
5905
0342
5906
Schematic diagrams of a dye-sensitizedelectrochromic smart window.B.A. Gregg, Endeavour Vol. 21(2) 1997.
Transmittance spectra of an experimentalsolid-state electrochromic cell in both thebleached and colored states.
Bleached Colored
03425937
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Dye-sensitized Solar Cells (DSC)
attractive application
light weight
colorful
sharp cut in production cost
environmentally benign points
NIKKEI 2003.3
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Thin Film Si Solar Cell
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Calculated Efficiency of Solar Cells with Base Diffusion Length,Ln, and Base Thickness d, Having Very Good Emitters
(Cell B [thin, with back surface field BSF and optical confinement OC] isbetter than cell A [thick, no BSF, no OC], though its diffusion length is lower.)
100 200 300 400
20
18
16
12
�(%
)
d (�m)
14
500 �m
200 �m
100 �m
50 �m
Ln =
0
A
B
034016387
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Calculated MACD for SiSolar Cells with DifferentTexture Shapes
Various Surface Structures(a) Random Pyramids (b)Textured Pyramids (c)Inverted Pyramids (d)Perpendicular Slats
(a) (b)
(c)
(d)
AR coatingMedium 1Medium 2Air
Si
034016405
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Approaches to Thin-Film PolycrystallineSi Solar Cells on Different Substrates
Objective: To fabricate 10-20 � Si film of sufficient electronic quality withhigh throughput (>1�/min) on low-cost substrates at relatively low processingtemperature.
Approaches
(1) Single-crystal substrates (Cz or Fz growth)
• Epitaxial growth on porous silicon followed by separation by
chemical etching
• Hydrogen implantation in subsurface Si-wafer followed by separation
(demonstrated for 1� Si layer)
• “Epilift” process consisting of deposition of epilayer on
patterned single-crystal substrate
(2) Multicrystalline Si-substrate — metallurgical-grade Si-substrate
(3) Low-cost, non-silicon substrates — glass, ceramic, metals
03250219
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STAR Structure
03250220
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0.0 0.2 0.4
40
30
20
10
Curr
entdensi
ty(m
A/c
m2)
Voltage (V)
0.60
AM1, 100 mW/cm2
Cell area = 0.16 cm2
Voc = 0.578 V
Jsc = 37.2 mA/cm2
Fill factor = 80.0%
Efficiency = 17.2%
Al contact
p �c-SiC (7.5 nm)ITO (80 nm)
p a-SiC (7.5 nm)
n poly-Si (300 �m)
n �c-Si (20 nm)Al contact
p �c-SiC/n poly-Si heterojunction cell
�c-SiC/Poly-Si Heterojunction Solar Cell andIts Output Characteristics
(Presented by Osaka Univ.)
Thin-Film Solar Cells, Y. Hamakawa, Springer
034016352
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Current Status ofThin-Film Si Solar Cell Efficiency*
03250221
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Summary of Various TF-Si Solar Cells
034016404
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Summary of Various TF-Si Solar Cells
034016403
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Future Developments ofThin-Film Si (polycrystalline) Solar Cells
• New approaches to improvements in materials quality (grain size, electron transport, grain-boundary
passivation, etc.) on low-cost substrates
• Breakthroughs in high-throughput growth rates
• Surface morphology and roughness control to achieve optimum light-trapping
• Novel approaches to converting indirect-bandgap Si to direct bandgap (co-doping, quantum confinement, Si:Ge superlattice structure, etc.)
03250222
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GaAs Thin-Film Solar Cells
Current Status and Potential Advantages
• Material with optimum energy gap and light absorption characteristics
• High efficienty (~25%) achieved on epitaxially grown GaAs onGe-coated
GaAs single crystal substrate
• High efficiency GaAs thin solar cells fabricated on reusabel substrate
(CLEFT Process)
• Polycrystalline thin film GaAs solar cells (h = 11%) fabricated in early
1980s using low-cost w-coated graphite substrate
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Current-Voltage Characteristics of p+/n/n+
Polycrystalline GaAs Thin FilmHomojunction Solar Cells*
03250224
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Organic Thin Film Solar Cell
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Progress in LED efficiencies.
Sheats et al., H.P. Lab, Science 273, 884 (1996).
03250225
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Bulk HeterojunctionSolar Cell Connected To AnExternal Resistive Load &Screen Printing Technique
03250226
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Absorption Coefficients of Films of Commonly UsedMaterials are Depicted in Comparison with the
Standard AM 1.5 Terrestrial Solar Spectrum(the overlap is generally small)
034016378
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Single Layer Device witha Schottky Contact at the
Aluminum Contact
Bilayer HeterojunctionDevice
(The donor [D] contacts the higherand the acceptor [A] the lower workfunction metal, to achieve good hole
and electron, respectively.)
034016379
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Bulk Heterojunction Device(The donor [D] is blended with the
acceptor [A] throughout the whole film.)
10
8
6
4
2
00 50 100 150
Active layer thickness (nm)
I sc
(iqe
=1)
[mA
/cm
2]
200 250 300
(PEDOT:PSS 150 nm. MDMO-PPV:PCBM 1:4)
Calculated Photocurrent ofa MDMO-PPV:PCBM-BasedSolar Cell under the IdealAssumption of an Internal
Quantum Efficiency of Unity
034016380
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Al
Structure (left) and the Energetic Descriptionat Closed Circuit Conditions (right) of an
Organic p-i-n Solar Cell
N-doped C60
Blend ZnPc:C60
P-doped MeO-TPD
ITO
Glass substrate
ITO Metal
034016381
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Reported Efficiencies of Some RecentOrganic Solar Cells at AM1.5
03250227
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Global Views of Semiconductor Materialsfor PV Applications
Elemental, Binary, and Ternary Semiconductors
034016111
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Science Topics Needed by All Thin Films
• Science Base
• Degradation and Metastable Mechanisms
• Device Characterization and Modeling
• In situ process diagnostics and controls
• Device protection from water vapor
• Innovative module design, including cellinterconnects, device protections, lower-costsubstrate, less-costly replacement packaging
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Conclusions
• Future of thin-film solar cells looks very promising
• Major improvements in efficiency, stability, and reduction
in cost are being made continuously
• Multiple options are available
• Industries are gearing-up for large-scale production
• Performance gap between laboratory scale devices and
commercial modules needs to be narrowed
• Opportunities are enormous for new innovation in terms of
materials and device technologies
03250228