d. attié

38
Nov. 11, 2009 WP meeting 94 1 D. Attié SINP, January 22 th , 2010 irfu y a l c a s irfu y a l c a s Beam tests Beam tests of a Micromegas of a Micromegas Large TPC Prototype Large TPC Prototype

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Beam tests of a Micromegas Large TPC Prototype. D. Attié. SINP, January 22 th , 2010. Overview. Introduction, technological choice for ILC-TPC The Large TPC Prototype for ILC Bulk Micromegas with resistive anodes Beam test conditions, T2K electronics Data analysis results: - PowerPoint PPT Presentation

TRANSCRIPT

Page 1: D. Attié

Nov. 11, 2009WP meeting 94

1

D. Attié

SINP, January 22th, 2010

i r f u

yalcas

i r f u

yalcas

Beam testsBeam tests

of a Micromegasof a Micromegas

Large TPC PrototypeLarge TPC Prototype

Page 2: D. Attié

OverviewOverviewOverviewOverview

[email protected] 2

Introduction, technological choice for ILC-TPC

•The Large TPC Prototype for ILC

•Bulk Micromegas with resistive anodes

•Beam test conditions, T2K electronics

•Data analysis results:– Drift velocity

– Pad response function

– Resolution

•Comparison between two resistive modules

•Future plans:– Pixelized Micromegas module

– Integrated electronics for 7 modules

Conclusion

SINP seminar ̶ January 22th, 2010

Page 3: D. Attié

2. Spread charge over several pads: resistive anode+ reduce number of channels, cost and budget+ protect the electronics– limit the track separation– need offline computing

How to improve the spatial resolution?How to improve the spatial resolution?How to improve the spatial resolution?How to improve the spatial resolution?

3SINP seminar ̶ January 22th, 2010

• Need for ILC: measure 200 track points with a transverse resolution ~ 100 μm

- example of track separation with 1 mm x 6 mm pad size: 1,2 × 106 channels of electronics sz=0 > 250 μm amplification avalanche over one pad

• Spatial resolution σxy:

- limited by the pad size (s0 ~ width/√12)

- charge distribution narrow (RMSavalanche ~ 15 μm)

1. Decrease the pad size: narrowed strips, pixels+ single electron efficiency – need to identify the electron clusters

2. Resistive anode

Calculation for the ILC-TPC

D.C. Arogancia et al., NIMA 602 (2009) 403

55 mm

1. Pixels

[email protected]

Page 4: D. Attié

Large TPC Prototype for ILCLarge TPC Prototype for ILCLarge TPC Prototype for ILCLarge TPC Prototype for ILC

[email protected] 4SINP seminar ̶ January 22th, 2010

• Built by the collaboration LC-

TPC

• Financed by EUDET

• Located at DESY: 6 GeV e-

beam

• Sharing out :- magnet: KEK, Japan

- field cage: DESY, Germany

- trigger: Saclay, France

- endplate: Cornell, USA

- Si envelope: OAW, Austria

- laser: Victoria U., Canada

- Micromegas: Saclay, France, Carleton/Montreal U.,

Canada

- GEM: Saga, Japan

- TimePix pixel: F, G, NL

Page 5: D. Attié

Large TPC Prototype for ILCLarge TPC Prototype for ILCLarge TPC Prototype for ILCLarge TPC Prototype for ILC

[email protected] 5SINP seminar ̶ January 22th, 2010

Page 6: D. Attié

Large TPC Prototype for ILCLarge TPC Prototype for ILCLarge TPC Prototype for ILCLarge TPC Prototype for ILC

[email protected] 6SINP seminar ̶ January 22th, 2010

• 60 cm long TPC• Endplate ø = 80 cm of 7 interchangeable panels

of 23 cm to fit in 1T superconducting magnet

24 rows x 72 columns <pad size> ~ 3x7

mm2

80 cm

Page 7: D. Attié

Module presently avalaibleModule presently avalaibleModule presently avalaibleModule presently avalaible

[email protected] 7SINP seminar ̶ January 22th, 2010

Resistive ink~1 MΩ/□

Resistive Kapton~4 MΩ/□

Standard

2 Resistive Kapton~1 MΩ/□

Page 8: D. Attié

Beam test conditions at B=1TBeam test conditions at B=1TBeam test conditions at B=1TBeam test conditions at B=1T

[email protected] 8SINP seminar ̶ January 22th, 2010

• Bulk Micromegas detector: 1726 (24x72) pads of ~3x7 mm²

• AFTER-based electronics (72 channels/chip): – low-noise (700 e-) pre-amplifier-shaper– 100 ns to 2 μs tunable peaking time– full wave sampling by SCA

• Beam data (5 GeV electrons) were taken at several z values by sliding the TPC in the magnet. Beam size was 4 mm rms.

– frequency tunable from 1 to 100 MHz (most data at 25 MHz)

– 12 bit ADC (rms pedestals 4 to 6 channels)

6 FECs and 1 FEM in its shielding

Page 9: D. Attié

Determination of z rangeDetermination of z rangeDetermination of z rangeDetermination of z range

[email protected] 9SINP seminar ̶ January 22th, 2010

• Cosmic run at 25 MHz of sampling frequency time bin = 40 ns

• Drift velocity in T2K gas (Ar/CF4/iso-C4H10, 95/3/2) at 230 V/cm:

• TPC length = 56.7 cm agreement with survey

220 time bins

Page 10: D. Attié

Pad signals: beam data samplePad signals: beam data samplePad signals: beam data samplePad signals: beam data sample

[email protected] 10SINP seminar ̶ January 22th, 2010

• RUN 284

• B = 1T

• T2K gas

• Peaking time: 100 ns

• Frequency: 25 MHz

Page 11: D. Attié

Two-track separationTwo-track separationTwo-track separationTwo-track separation

[email protected] 11SINP seminar ̶ January 22th, 2010

r

φ

z

Page 12: D. Attié

Drift velocity measurementDrift velocity measurementDrift velocity measurementDrift velocity measurement

[email protected] 12SINP seminar ̶ January 22th, 2010

• Measured drift velocity (Edrift = 230 V/cm, 1002 mbar): 7.56 ±

0.02 cm/s

• Magboltz: 7.548 ± 0.003 cm/s in Ar/CF4/iso-C4H10/H2O

(95:3:2:100ppm)

B = 0T

Page 13: D. Attié

Determination of the Pad Response FunctionDetermination of the Pad Response FunctionDetermination of the Pad Response FunctionDetermination of the Pad Response Function

[email protected] 13SINP seminar ̶ January 22th, 2010

• Fraction of the row charge on a pad vs xpad – xtrack

(normalized to central pad charge)

Clearly shows charge spreadingover 2-3 pads(data with 500 ns shaping)

• Then fit x(cluster) using thisshape with a χ² fit, and fit simultaneously all lines

xpad – xtrack (mm)

Pad pitch

See Madhu Dixit’s talk

xpad – xtrack

(mm)

Page 14: D. Attié

Spatial resolutionSpatial resolutionSpatial resolutionSpatial resolution

[email protected] 14SINP seminar ̶ January 22th, 2010

• Resolution at z=0: σ0 = 54.8±1.6 m with 2.7-3.2 mm pads (wpad/55)

• Effective number of electrons: Neff = 31.81.4 consistent with expectations

eff

dx N

zC

22

0

Page 15: D. Attié

Field distortion measurement using laser Field distortion measurement using laser Field distortion measurement using laser Field distortion measurement using laser

[email protected] 15SINP seminar ̶ January 22th, 2010

Beam position

5 cm

• Two laser devices installed on the endplate to light up photosensitive patternon the cathode (spots and line)

• Deterioration of resolution at z > 40 cm : due to low field 0.9 to 0.7 T in the last 20 cm (significant increase of transverse diffusion)

30 cm50 cm

B field map of the magnetPhotoelectrons from the cathode pattern

Page 16: D. Attié

Description of the resistive anodesDescription of the resistive anodesDescription of the resistive anodesDescription of the resistive anodes

[email protected] 16SINP seminar ̶ January 22th, 2010

DetectorDielectric

layerResistive layer

Resistivity (MΩ/□)

Resistive Kapton

Epoxy-glass75 μm

C-loaded Kapton25 μm

~4-8

Resistive Ink Epoxy-glass 75 μm

Ink (3 layers) ~50 μm

~1-2

Resistive Kapton Resistive Ink

PCB

PrepregResistive Kapton

PCB

Prepreg

Resistive Ink

Page 17: D. Attié

Comparison at B=1T, z ~ 5 cmComparison at B=1T, z ~ 5 cmComparison at B=1T, z ~ 5 cmComparison at B=1T, z ~ 5 cm

[email protected] 17SINP seminar ̶ January 22th, 2010

Resistive Kapton Resistive Ink

• RUN 310

• Vdrift = 230 cm/s

• Vmesh = 380 V

• Peaking time: 500 ns• Frequency Sampling: 25 MHz

• RUN 549

• Vdrift = 230 cm/s

• Vmesh = 360 V

• Peaking time: 500 ns • Frequency Sampling: 25 MHz

Page 18: D. Attié

Pad Response Functions, z ~ 5 cmPad Response Functions, z ~ 5 cmPad Response Functions, z ~ 5 cmPad Response Functions, z ~ 5 cm

[email protected] 18SINP seminar ̶ January 22th, 2010

Resistive Kapton Resistive Ink

Γ² = 7 mm

δ = 10 mm

Γ² = 11 mm

δ = 13 mm

xpad – xtrack

(mm)

xpad – xtrack

(mm)

σz=5 cm = 68 µm σz=5cm = 130 µm !

44

22

44

22

1

1)(

xbxb

xaxaxf

xpad – xtrack

(mm)

xpad – xtrack

(mm)

Page 19: D. Attié

2.2 GeV Momentum2.2 GeV Momentum2.2 GeV Momentum2.2 GeV Momentum

[email protected] 19SINP seminar ̶ January 22th, 2010

• B=1T

• Beam energy set to 2.2 GeV using one module in the center

• Simple Landau fit MPV = 2.2 GeV

Page 20: D. Attié

Tests with Si envelope (nov. 2009) Tests with Si envelope (nov. 2009) Tests with Si envelope (nov. 2009) Tests with Si envelope (nov. 2009)

[email protected] 20SINP seminar ̶ January 22th, 2010

Si

Si

From Vienna

Page 21: D. Attié

Synchronized events with Si envelopeSynchronized events with Si envelopeSynchronized events with Si envelopeSynchronized events with Si envelope

[email protected] 21SINP seminar ̶ January 22th, 2010

TLU

Resistive Ink

Resistive Kapton

Page 22: D. Attié

Description of the TimePix chipDescription of the TimePix chipDescription of the TimePix chipDescription of the TimePix chip

[email protected] 22SINP seminar ̶ January 22th, 2010

• Chip (CMOS ASIC) upgraded in the EUDET framework from the Medipix chip developed first for medical applications

• IBM technology 0.25 m

• Characteristics:– surface: 1.4 x 1.6 cm2

– matrix of 256 x 256– pixel size: 55 x 55 μm2

• For each pixel:– preamp/shaper– threshold discriminator– register for configuration– TimePix synchronization logic– 14-bit counter

• Noise: ~ 650 e-– Cin ~ 15 fF

55 m

55 m

Pixel

14111 m

1612

0 m

1408

0 m

(pi

xel a

rray

)

11 22 33

44

55

55

μ m

55 μ m

Pre

am

p/

shap

er

TH

L dis

c.

Con

fig

ura

tion

la

tch

es

Interface

Counter

Syn

chro

niz

ati

on L

ogic

Page 23: D. Attié

TimePix synchronization logic controlTimePix synchronization logic controlTimePix synchronization logic controlTimePix synchronization logic control

[email protected] 23SINP seminar ̶ January 22th, 2010

Medipix Mode

Timepix Mode

Mask

P1 P0 Mode

0 0 0 Masked

0 0 1 Masked

0 1 0 Masked

0 1 1 Masked

1 0 0 Medipix

1 0 1 TOT

1 1 0 Timepix-1hit

1 1 1 Timepix

• Each pixel can be configured independently in 5 different modes

• Internal clock up to 100 MHz

Charge summed

not detected

detected

100 MHz

Analog signal

Internal shutter

Shutter

Internal clock

Digital signal

10 ns

Page 24: D. Attié

Micro-TPCMicro-TPC TimePix/Micromegas TimePix/MicromegasMicro-TPCMicro-TPC TimePix/Micromegas TimePix/Micromegas

[email protected] 24SINP seminar ̶ January 22th, 2010

Field cage

Cover

Micromegasmesh

TimePix chip

Windows for X-ray sources

Windows for β sources

6 c

m• Micro-TPC with a 6 cm height field cage

• Size : 4 cm × 5 cm × 8 cm

• Read out by MUROS or USB1.2 devices

• Two detectors are available now at Saclay

Page 25: D. Attié

Micro-TPCMicro-TPC TimePix/Micromegas: Time mode TimePix/Micromegas: Time modeMicro-TPCMicro-TPC TimePix/Micromegas: Time mode TimePix/Micromegas: Time mode

[email protected] 25SINP seminar ̶ January 22th, 2010

• TimePix chip+ SiProt 20 μm+ Micromegas

• 55Fe source

• Ar/Iso (95:5)

• Time mode

• z = 25 mm

• Vmesh = -340 V

• tshutter = 283 μs

Page 26: D. Attié

Micro-TPCMicro-TPC TimePix/Micromegas: Time mode TimePix/Micromegas: Time modeMicro-TPCMicro-TPC TimePix/Micromegas: Time mode TimePix/Micromegas: Time mode

[email protected] 26SINP seminar ̶ January 22th, 2010

• TimePix chip+ SiProt 20 μm+ Micromegas

• 90Sr source

• Ar/Iso (95:5)

• Time mode

• z ~ 40 mm

• Vmesh = -340 V

• tshutter = 180 μs

Page 27: D. Attié

2×4 TimePix/InGrid matrix module2×4 TimePix/InGrid matrix module2×4 TimePix/InGrid matrix module2×4 TimePix/InGrid matrix module

[email protected] 27SINP seminar ̶ January 22th, 2010

• Mother card• Mezzanine card• Guard ring card• Heat dissipation block

Page 28: D. Attié

Further tests for resistive bulk MicromegasFurther tests for resistive bulk MicromegasFurther tests for resistive bulk MicromegasFurther tests for resistive bulk Micromegas

[email protected] 28SINP seminar ̶ January 22th, 2010

In 2008/2009 with one detector module In 2010/2011 with 7 detector modules

Reduce

th

e e

lect

ronic

s to

fit

to t

he m

odu

le a

nd p

ow

er

con

sum

pti

on

Resi

stiv

e t

ech

nolo

gy c

hoic

e

Page 29: D. Attié

7-modules project7-modules project7-modules project7-modules project

[email protected] 29SINP seminar ̶ January 22th, 2010

PCB detector (bottom)

FEM

FEC

Page 30: D. Attié

7-modules project7-modules project7-modules project7-modules project

[email protected] 30SINP seminar ̶ January 22th, 2010

Page 31: D. Attié

• Remove packaging and protection diodes• Use 2 × 300 pins connector• Replace resistors SMC 0603 by 0402 (1 mm × 0.5 mm)

7-modules project7-modules project7-modules project7-modules project

[email protected] 31SINP seminar ̶ January 22th, 2010

25 cm

14 cm

0,78 cm

0,74 cm

4,5 cm

12,5 cm

2,8 cm3,5 cm

3,5 cm

FEC

Chip

Page 32: D. Attié

ConclusionsConclusionsConclusionsConclusions

[email protected] 32SINP seminar ̶ January 22th, 2010

•Three Micromegas technologies with resistive anode have been tested within the EUDET facility using 1T magnet to reduce the transverse diffusion

•C-loaded Katpon (4 MΩ/□) technology gives better results than resistive ink technology

•Data analysis results confirm excellent resolution at small distance with theresistive C-loaded Kapton (4 MΩ/□): 55 m for 3 mm pads

•Data analysis of laser tests and the second resistive C-loaded Kapton (1 MΩ/□) should be done soon.

•Plans are to test several resistive layer manufacturing process and capacitance/resistivity, then go to 7 modules with integrated electronics by the end of this year

Page 33: D. Attié

[email protected] 33SINP seminar ̶ January 22th, 2010

Dhanyavad

Page 34: D. Attié

Backup slidesBackup slidesBackup slidesBackup slides

[email protected] 34SINP seminar ̶ January 22th, 2010

Page 35: D. Attié

TimePix chip architectureTimePix chip architectureTimePix chip architectureTimePix chip architecture

IO

Logic

LVDS

In

LVDS

Out32-bit CMOS Output

256-bit Fast Shift Register

3584

-bit

Pix

el C

olum

n-0

3584

-bit

Pix

el C

olum

n-0

Bandgap + 13 DACs16

120

m

14111 m35

84-b

it P

ixel

Col

umn

-135

84-b

it P

ixel

Col

umn

-1

3584

-bit

Pix

el C

olum

n-2

5535

84-b

it P

ixel

Col

umn

-255

1408

0 m

(pix

el a

rray

)

• Clock per pixel up to 100 MHz

• Characteristics:– analog power: 440 mW– digital power (Ref_Clk = 80 MHz): 450 mW– serial readout (@ 100 MHz): 9.17 ms– parallel readout (@ 100 MHz): 287 μs– > 36 M transistors on 6 layers

• Pixel modes:– masked– counting mode (Medipix, Timepix-1h)– Time-Over-Threshold “charge” info– Common stop “time” info

[email protected] 35SINP seminar ̶ January 22th, 2010

Page 36: D. Attié

TimePix chip schematicTimePix chip schematicTimePix chip schematicTimePix chip schematic

Preamp

Disc

THR14 bitsShift Register

Input

Ctest

Testbit

Test Input

Mask

4 bits thr Adj

Mux

Mux

Clk_Read

Previous Pixel

Next Pixel

Conf

8 bits configuration

Polarity

Analogic part Digital part

Ref_Clk

Timepix SynchronizationLogic

Ref_Clkb

P0

P1

Shutter

Ovf Control

Clk_Read

Shutter_int

For each pixel

[email protected] 36SINP seminar ̶ January 22th, 2010

Page 37: D. Attié

Readout system for Medipix/TimePix chipReadout system for Medipix/TimePix chipReadout system for Medipix/TimePix chipReadout system for Medipix/TimePix chip

• MUROSv2.1:

– Serial readout– VHDCI cable of length <3m– read 8 chips in mosaic– tunable clock [30-200MHz]– ~40fps @160MHz

http://www.nikhef.nl/pub/experiments/medipix/muros.html

• USB:

– Serial readout– ~5 fps@20MHz

http://www.utef.cvut.cz/medipix/usb/usb.html

• Mosaic achitecture:

[email protected] 37SINP seminar ̶ January 22th, 2010

Page 38: D. Attié

Detectors using Medipix2/TimePix chipDetectors using Medipix2/TimePix chipDetectors using Medipix2/TimePix chipDetectors using Medipix2/TimePix chip

+

-

+

-

+

-

Medipix2 chip Medipix2/TimePix chip

X-ray source

Ionizing

particle

Single pixel

readout cell

Flip-chip bump bondingconnections

Semiconductorsensor

Gas volume

Amplification System (MPGD)

Drift grid

Solid detector Gas detectorx, y, F(x, y) x, y, z(t), E(x,y)

[email protected] 38SINP seminar ̶ January 22th, 2010