datasheet - a2c50s65m2-f - acepack™ 2 converter inverter ... · system up to 20 khz. product...

ACEPACKTM 2

Features• ACEPACK™ 2 power module

– DBC Cu Al2O3 Cu• Converter inverter brake topology

– 1600 V, very low drop rectifiers for converter– 650 V, 50 A IGBTs and diodes– Soft and fast recovery diode

• Integrated NTC

Applications• Inverters• Motor drives

DescriptionThis power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 2package with NTC, integrating the advanced trench gate field-stop technology fromSTMicroelectronics. This new IGBT technology represents the best compromisebetween conduction and switching loss, to maximize the efficiency of any convertersystem up to 20 kHz.

Product status

A2C50S65M2-F

Product summary

Order code A2C50S65M2-F

Marking A2C50S65M2-F

Package ACEPACK™ 2

Leads type Press fit contact pins

ACEPACK™ 2 converter inverter brake, 650 V, 50 A trench gate field‑stop M series IGBT with soft diode and NTC

A2C50S65M2-F

Datasheet

DS12341 - Rev 3 - November 2018For further information contact your local STMicroelectronics sales office.

www.st.com

http://www.st.com/en/product/a2c50s65m2-f

1 Electrical ratings

1.1 Inverter stageLimiting values at TJ = 25 °C, unless otherwise specified.

1.1.1 IGBTs

Table 1. Absolute maximum ratings of the IGBTs, inverter stage

Symbol Description Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 650 V

IC Continuous collector current (TC = 100 °C) 50 A

ICP(1) Pulsed collector current (tp = 1 ms) 100 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 208 W

TJMAX Maximum junction temperature 175 °C

TJop Operating junction temperature range under switching conditions -40 to 150 °C

1. Pulse width limited by maximum junction temperature

Table 2. Electrical characteristics of the IGBTs, inverter stage

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage IC = 1 mA, VGE = 0 V 650 V

VCE(sat)(terminal)

Collector-emitter saturationvoltage

VGE = 15 V, IC= 50 A 1.95 2.3 V

VGE = 15 V, IC = 50 A,TJ = 150 ˚C 2.3 V

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 100 μA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±500 nA

Cies Input capacitanceVCE = 25 V, f = 1 MHz,VGE = 0 V

4150 pF

Coes Output capacitance 170 pF

Cres Reverse transfer capacitance 80 pF

Qg Total gate chargeVCC = 520 V, IC = 50 A,VGE = ±15 V 150 nC

td(on) Turn-on delay time VCC = 300 V, IC = 50 A,

RG = 6.8 Ω, VGE = ±15 V,

di/dt = 2320 A/µs

147 ns

tr Current rise time 17.5 ns

Eon(1) Turn-on switching energy 0.147 mJ

A2C50S65M2-F Electrical ratings

DS12341 - Rev 3 page 2/18


td(off) Turn-off delay time VCC = 300 V, IC = 50 A,

RG = 6.8 Ω, VGE = ±15 V,

dv/dt = 7400 V/µs

105 ns

tf Current fall time 133 ns

Eoff(2) Turn-off switching energy 1.36 mJ


RG = 6.8 Ω, VGE = ±15 V,

di/dt = 2010 A/µs, TJ = 150 °C

147 ns

tr Current rise time 20 ns



RG = 6.8 Ω, VGE = ±15 V,

dv/dt = 6000 V/µs, TJ = 150 °C

104 ns



tSC Short-circuit withstand timeVCC ≤ 360 V, VGE ≤ 15 V,TJstart ≤ 150 °C 6 µs

RTHj-cThermal resistance junction-to-case Each IGBT 0.65 0.72 °C/W

RTHc-hThermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 °C/W

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

1.1.2 DiodeLimiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode, inverter stage

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 650 V

IF Continuous forward current (TC = 100 °C) 50 A

IFP(1) Pulsed forward current (tp = 1 ms) 100 A




Table 4. Electrical characteristics of the diode, inverter stage


VF(terminal) Forward voltage

IF = 50 A - 1.85 2.65V

IF = 50 A, TJ = 150 ˚C - 1.65

trr Reverse recovery time

IF = 50 A, VR = 300 V,VGE = ±15 V, diF/dt = 2320 A/μs

- 155 ns

Qrr Reverse recovery charge - 2.32 µC

Irrm Reverse recovery current - 41 A

Erec Reverse recovery energy - 0.53 mJ

A2C50S65M2-FInverter stage

DS12341 - Rev 3 page 3/18


trr Reverse recovery timeIF = 50 A, VR = 300 V,

VGE = ±15 V, diF/dt = 2010 A/μs,

TJ = 150 °C

- 270 ns




RTHj-cThermal resistance junction-to-case Each diode - 1.0 1.1 °C/W

RTHc-hThermal resistance case-to-heatsink Each diode, λgrease = 1 W/(m·°C) - 0.9 °C/W

1.2 Brake stageLimiting values at TJ = 25 °C, unless otherwise specified.

1.2.1 IGBT

Table 5. Absolute maximum ratings of the IGBT, brake stage


VCES Collector-emitter voltage (VGE = 0) 650 V

IC Continuous collector current (TC = 100 °C) 50 A

ICP(1) Pulsed collector current (tp = 1 ms) 100 A

VGE Gate-emitter voltage ±20 V

PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) 208 W




Table 6. Electrical characteristics of the IGBT, brake stage


V(BR)CESCollector-emitter breakdownvoltage IC = 1 mA, VGE = 0 V 650 V

VCE(sat)(terminal)

Collector-emitter saturationvoltage

VGE = 15 V, IC = 50 A 1.95

VVGE = 15 V, IC = 50 A,TJ = 150 ˚C 2.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 100 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ± 500 nA

Cies Input capacitanceVCE = 25 V, f = 1 MHz,VGE = 0 V

4150 pF

Coes Output capacitance 170 pF

Cres Reverse transfer capacitance 80 pF

Qg Total gate chargeVCC = 520 V, IC = 50 A,VGE = ±15 V 150 nC

A2C50S65M2-FBrake stage

DS12341 - Rev 3 page 4/18



RG = 6.8 Ω, VGE = ±15 V,

di/dt = 2320 A/µs

147 ns

tr Current rise time 17.5 ns



RG = 6.8 Ω, VGE = ±15 V,

dv/dt = 7400 V/µs

105 ns




RG = 6.8 Ω, VGE = ±15 V,

di/dt = 2010 A/µs, TJ = 150 °C

147 ns

tr Current rise time 20 ns



RG = 6.8 Ω, VGE = ±15 V,

dv/dt = 6000 V/µs, TJ = 150 °C

104 ns



tSC Short-circuit withstand timeVCC ≤ 360 V, VGE≤ 15 V,TJstart ≤ 150 °C 6 µs

RTHj-cThermal resistance junction-to -case Each IGBT 0.65 0.72 °C/W

RTHc-hThermal resistance case-to-heatsink Each IGBT, λgrease = 1 W/(m·°C) 0.79 °C/W

1. Including the reverse recovery of the diode2. Including the tail of the collector current

1.2.2 Diode

Table 7. Absolute maximum ratings of the diode, brake stage



IF Continuous forward current (TC = 100 °C) 50 A

IFP (1) Pulsed forward current (tp = 1 ms) 100 A



1. Pulse width limited by maximum junction temperature.

Table 8. Electrical characteristics of the diode, brake stage


VF (terminal) Forward voltageIF = 50 A - 1.85

VIF = 50 A, TJ = 150 ˚C - 1.65

trr Reverse recovery time

IF = 50 A, VR = 300 V,VGE = ±15 V, di/dt = 2320 A/μs

- 155 ns




A2C50S65M2-FBrake stage

DS12341 - Rev 3 page 5/18


trr Reverse recovery timeIF = 50 A, VR = 300 V,

VGE = ±15 V, di/dt = 2010 A/μs,

TJ = 150 °C

- 270 ns






1.3 Converter stageLimiting values at TJ = 25 °C, unless otherwise specified.

Table 9. Absolute maximum ratings of the bridge rectifiers

Symbol Description Value Unit


IF RMS forward current 50 A

IFSMForward surge current tp = 10 ms, TC = 25 °C 450

AForward surge current tp = 10 ms, TC = 150 °C 365

I2ttp = 10 ms, TC = 25 °C 1012

A2stp = 10 ms, TC = 150 °C 666



Table 10. Electrical characteristics of the bridge rectifiers


VF(terminal) Forward voltage

IF = 50 A - 1.23 1.6V

IF = 50 A, TJ = 150 ˚C - 1.14

IR Reverse current TJ = 150 ˚C, VR = 1600 V - 1 mA



A2C50S65M2-FConverter stage

DS12341 - Rev 3 page 6/18

1.4 NTC

Table 11. NTC temperature sensor, considered as stand-alone


R25 Resistance T = 25 °C 5 kΩ

R100 Resistance T = 100 °C 493 Ω

ΔR/R Deviation of R100 -5 +5 %

B25/50 B-constant 3375 K

B25/80 B-constant 3411 K

T Operating temperature range -40 150 °C

Figure 1. NTC resistance vs temperature

GADG260720171142NTC

10 4

10 3

10 2 0 25 50 75 100 125

R (Ω)

TC (°C)

Figure 2. NTC resistance vs temperature, zoom

GADG260720171151NTCZ

800

700

600

500

400

30085 90 95 100 105 110

R (Ω)

TC (°C)

max

min

typ

1.5 Package

Table 12. ACEPACK™ 2 package

Symbol Parameter Min. Typ. Max. Unit

Visol Isolation voltage (AC voltage, t = 60 s) 2500 Vrms

Tstg Storage temperature -40 125 °C

CTI Comparative tracking index 200

Ls Stray inductance module P1 - EW loop 33.5 nH

Rs Module single lead resistance, terminal to chip 3.6 mΩ

A2C50S65M2-FNTC

DS12341 - Rev 3 page 7/18

2 Electrical characteristics (curves)

Figure 3. IGBT output characteristics(VGE = 15 V, terminal)

IGBT111020170929TCH

80

60

40

20

00 1 2 3 4

Ic (A)

VCE (V)

TJ = 25 °C

TJ = 150 °C

Figure 4. IGBT output characteristics(TJ = 150 °C ,terminal)

IGBT101020171341OC25

90

80

70

60

50

40

30

20

1000 1 2 3 4

IC (A)

VCE (V)

19 V

17 V

15 V

13 V

11 V

VGE = 9 V

Figure 5. IGBT transfer characteristics(VCE = 15 V, terminal)

IGBT101020171339OC25

80

60

40

20

05 6 7 8 9 10 11 12

IC (A)

VGE (V)

TJ = 25 °C

TJ = 150 °C

Figure 6. IGBT collector current vs case temperature

IGBT051120181512CCT

100

80

60

40

20

00 25 50 75 100 125 150

IC (A)

TC (°C)

VCC = 15 V, TJ ≤ 175 °C

A2C50S65M2-FElectrical characteristics (curves)

DS12341 - Rev 3 page 8/18

Figure 7. Switching energy vs gate resistance

IGBT161020171415SLG

4

3

2

1

00 20 40 60 80

E (mJ)

RG (Ω)

VCC = 300 V, IC = 50 A, VGE = ±15 V

EON (TJ = 150°C)

EOFF (TJ = 150°C)

EON (TJ = 25°C)

EOFF (TJ = 25°C)

Figure 8. Switching energy vs collector current

IGBT161020171419SLC

3

2

1

010 30 50 70 90

E (mJ)

IC (A)

VCC = 300 V, RG = 6.8 Ω, VGE = 15 V

EOFF (TJ = 150°C)

EON (TJ = 150°C)

EON (TJ = 25°C)

EOFF (TJ = 25°C)

Figure 9. IGBT reverse biased safe operating area(RBSOA)

IGBT101020171353OC25

50

40

30

20

10

00 100 200 300 400 500 600

IC (A)

VCE (V)

TJ = 125 °C, VGE = ±15 V, RG = 6.8 Ω

Figure 10. Diode forward characteristics (terminal)

IGBT101020171356DVF

80

60

40

20

00 0.4 0.8 1.2 1.6 2.0 VF (V)

IF(A)

TJ = 150 °C

TJ = 25 °C

Figure 11. Diode reverse recovery energy vs diode currentslope

IGBT161020171422RRE

1.5

1.2

0.9

0.6

0.3

0200 750 1300 1850

Erec (mJ)

di/dt (A/µs)

VCE = 300 V, VGE = ±15 V, IF = 50 A

TJ =150°C

TJ =25°C

Figure 12. Diode reverse recovery energy vs forwardcurrent

IGBT161020171427DVF

2.0

1.6

1.2

0.8

0.4

010 30 50 70 90

Erec (mJ)

IF (A)

TJ = 150 °C

TJ = 25 °C

VCE = 300 V, RG = 6.8 Ω, VGE = ±15 V


DS12341 - Rev 3 page 9/18

Figure 13. Diode reverse recovery energy vs gateresistance

IGBT161020171430SLG

1.5

1.2

0.9

0.6

0.3

00 20 40 60 80

Erec (mJ)

RG (Ω)

VCE = 300 V, IF = 50 A, VGE = ±15 V

TJ = 150 °C

TJ = 25 °C

Figure 14. Converter diode forward characteristics(terminal)

IGBT161020171431DVF

80

60

40

20

00 0.4 0.8 1.2

IF (A)

VF (V)

TJ = 150 °C

TJ = 25 °C

Figure 15. IGBT thermal impedance

IGBT161020171434ZTH

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth (°C/W)

t (s)

Zth (typ.) JH

Zth (max.) JC

JC

i 1 2 3 4ri (˚C/W) 0.0781 0.2997 0.2348 0.1033τi(s) 0.0002 0.0065 0.0344 0.2723

JH

i 1 2 3 4ri (˚C/W) 0.0832 0.3154 0.6593 0.3770τi(s) 0.0003 0.0104 0.0701 0.3228

RC - Foster thermal network


Figure 16. Inverter diode thermal impedance

IGBT161020171435ZTHMT

10 0

10 -1

10 -3 10 -2 10 -1 10 0

Zth (°C/W)

t (s)

Zth (typ.) JH

Zth (max.) JC

JC

i 1 2 3 4ri (˚C/W) 0.1741 0.4993 0.2989 0.1226τi(s) 0.0008 0.0076 0.0405 0.2723

JH

i 1 2 3 4ri (˚C/W) 0.2109 0.5538 0.7885 0.3415τi(s) 0.0010 0.0126 0.0785 0.3410




DS12341 - Rev 3 page 10/18

3 Test circuits

Figure 17. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 18. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 19. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

ICTd(on)

TonTr(Ion)

Td(off)

ToffTf

Tr(Voff)

Tcross

90%

10%

Figure 20. Diode reverse recovery waveform

25

A2C50S65M2-FTest circuits

DS12341 - Rev 3 page 11/18

4 Topology and pin description

Figure 21. Electrical topology and pin description

L3

L1L2

P

N

P1

GB

B

NB

T1U

T2

VW

EU EV EW

G1

G2

G3

G4

G5

G6

Figure 22. Package top view with CIB pinout

L3

P1

B

GBG6EW

L3

L2

L2

L1

L1 PP

N

G13G V V

G5

T2

T1

EW G4EV EV G2EU EU NB

P1

W W U U

N

A2C50S65M2-FTopology and pin description

DS12341 - Rev 3 page 12/18

5 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.

A2C50S65M2-FPackage information

DS12341 - Rev 3 page 13/18

https://www.st.com/ecopack

http://www.st.com

5.1 ACEPACK™ 2 CIB press fit contact pins package information

Figure 23. ACEPACK™ 2 CIB press fit contact pins package outline (dimensions are in mm)

56.7±0.3

51±0.15

22.7±0.3

16.4±0.2

4.5±0.1

1.3±0.2

2.5±0.2

62.

8±0.

5

48±

0.3

53±

0.1

42.5

±0.

2

52.7 REF

37

REF

Detail A 3.5 REF x45°

2.3

REF

8.5

0.00

9.60

16.00

19.20

22.40

25.60

28.80

32.000.

00

3.20

6.40

9.60

12.8

0

16.0

019

.20

22.4

0

25.6

0

28.8

0

32.0

0

35.2

0

38.4

0

41.6

0

44.8

0

48.0

0

12.80

L3

P1

B

GBG6EW

L3

L2

L2

L1

L1 P

N

UG13G V VW

G5

T2

T1

EW G4EV EV G2EU EU NB

P1

3.2

BSC

P

N

W U

8569722_ACEPACK2_CIB_Press_fit_contact_pins_rev4

12±

0.35

16.4

±0.

5

AA

3.2 BSC

• The lead size includes the thickness of the lead plating material.• Dimensions do not include mold protrusion.• Package dimensions do not include any eventual metal burrs.

A2C50S65M2-FACEPACK™ 2 CIB press fit contact pins package information

DS12341 - Rev 3 page 14/18

Figure 24. ACEPACK™ 2 CIB press fit contact pins recommended PCB holes layout (dimensions are inmm)

8569722_ACEPACK2_CIB_Press_fit_contact_pins_PCBholes_rev4

A2C50S65M2-FACEPACK™ 2 CIB press fit contact pins package information

DS12341 - Rev 3 page 15/18

Revision history

Table 13. Document revision history

Date Revision Changes

16-Oct-2017 1 Initial release.

16-Mar-2018 2

Removed maturity status indication from cover page. The document status isproduction data.

Updated features on cover page.

Updated Table 10. Electrical characteristics of the bridge rectifiers.

Updated Figure 14. IGBT thermal impedance and Figure 15. Inverter diodethermal impedance.

Updated Figure 22. ACEPACK™ 2 CIB press fit contact pins package outline(dimensions are in mm) and Figure 23. ACEPACK™ 2 CIB press fit pinsrecommended PCB holes layout (dimensions are in mm).

Minor text changes

14-Nov-2018 3Added Figure 6. IGBT collector current vs case temperature.

Minor text changes

A2C50S65M2-F

DS12341 - Rev 3 page 16/18

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

1.1 Inverter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.1.1 IGBTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

1.1.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

1.2 Brake stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.2.1 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

1.2.2 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

1.3 Converter stage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

1.4 NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

1.5 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4 Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

5.1 ACEPACK™ 2 CIB press fit contact pins package information . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

A2C50S65M2-FContents

DS12341 - Rev 3 page 17/18

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2018 STMicroelectronics – All rights reserved

A2C50S65M2-F

DS12341 - Rev 3 page 18/18

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