datasheet bsz099n06ls5 - tme...3 optimostm power-transistor,60v bsz099n06ls5 final data sheet rev....

1

BSZ099N06LS5

Rev.2.2,2016-08-10Final Data Sheet

(enlarged source interconnection)TSDSON-8FL

8 D

7 D

6 D

5 D

S 1

S 2

S 3

G 4

MOSFETOptiMOSTMPower-Transistor,60V

Features•OptimizedforhighperformanceSMPS,e.g.sync.rec.•100%avalanchetested•Superiorthermalresistance•N-channel•QualifiedaccordingtoJEDEC1)fortargetapplications•Pb-freeleadplating;RoHScompliant•Halogen-freeaccordingtoIEC61249-2-21

Table1KeyPerformanceParametersParameter Value UnitVDS 60 V

RDS(on),max 9.9 mΩ

ID 40 A

QOSS 13 nC

QG(0V..4.5V) 7 nC

Type/OrderingCode Package Marking RelatedLinksBSZ099N06LS5 PG-TSDSON-8 FL 099N06L -

1) J-STD20 and JESD22

2

OptiMOSTMPower-Transistor,60VBSZ099N06LS5


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

3



1MaximumratingsatTA=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current ID---

---

402911

AVGS=10V,TC=25°CVGS=10V,TC=100°CVGS=10V,TA=25°C,RthJA=60K/W1)

Pulsed drain current2) ID,pulse - - 160 A TC=25°C

Avalanche energy, single pulse3) EAS - - 19 mJ ID=20A,RGS=25Ω

Gate source voltage VGS -20 - 20 V -

Power dissipation Ptot--

--

362.1 W TC=25°C

TA=25°C,RthJA=60K/W1)

Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3ThermalcharacteristicsValues


Thermal resistance, junction - case,bottom RthJC - 2.1 3.5 K/W -

Device on PCB,6 cm2 cooling area1) RthJA - - 60 K/W -

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.2) See Diagram 3 for more detailed information3) See Diagram 13 for more detailed information

4



3Electricalcharacteristics

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mA

Gate threshold voltage VGS(th) 1.1 1.7 2.3 V VDS=VGS,ID=14µA

Zero gate voltage drain current IDSS --

0.110

1100 µA VDS=60V,VGS=0V,Tj=25°C

VDS=60V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

8.311.3

9.914 mΩ VGS=10V,ID=20A

VGS=4.5V,ID=10A

Gate resistance1) RG - 1.1 1.65 Ω -

Transconductance gfs 20 40 - S |VDS|>2|ID|RDS(on)max,ID=20A

Table5Dynamiccharacteristics1)Values


Input capacitance Ciss - 1000 1300 pF VGS=0V,VDS=30V,f=1MHz

Output capacitance Coss - 210 270 pF VGS=0V,VDS=30V,f=1MHz

Reverse transfer capacitance Crss - 15 26 pF VGS=0V,VDS=30V,f=1MHz

Turn-on delay time td(on) - 4.3 - ns VDD=30V,VGS=10V,ID=20A,RG,ext=1.6Ω

Rise time tr - 2.7 - ns VDD=30V,VGS=10V,ID=20A,RG,ext=1.6Ω

Turn-off delay time td(off) - 13.8 - ns VDD=30V,VGS=10V,ID=20A,RG,ext=1.6Ω

Fall time tf - 2.7 - ns VDD=30V,VGS=10V,ID=20A,RG,ext=1.6Ω

Table6Gatechargecharacteristics2)Values


Gate to source charge Qgs - 3.1 - nC VDD=30V,ID=20A,VGS=0to4.5V

Gate charge at threshold Qg(th) - 1.6 - nC VDD=30V,ID=20A,VGS=0to4.5V

Gate to drain charge1) Qgd - 2.0 3.0 nC VDD=30V,ID=20A,VGS=0to4.5V

Switching charge Qsw - 3.5 - nC VDD=30V,ID=20A,VGS=0to4.5V

Gate charge total1) Qg - 6.9 8.6 nC VDD=30V,ID=20A,VGS=0to4.5V

Gate plateau voltage Vplateau - 3.1 - V VDD=30V,ID=20A,VGS=0to4.5V

Gate charge total, sync. FET Qg(sync) - 12 - nC VDS=0.1V,VGS=0to10V

Output charge1) Qoss - 13 17.6 nC VDD=30V,VGS=0V

1) Defined by design. Not subject to production test.2) See ″Gate charge waveforms″ for parameter definition

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Table7ReversediodeValues


Diode continuous forward current IS - - 32 A TC=25°C

Diode pulse current IS,pulse - - 128 A TC=25°C

Diode forward voltage VSD - 0.87 1.1 V VGS=0V,IF=20A,Tj=25°C

Reverse recovery time1) trr - 18 36 ns VR=30V,IF=20A,diF/dt=100A/µs

Reverse recovery charge1) Qrr - 6 12 nC VR=30V,IF=20A,diF/dt=100A/µs

1) Defined by design. Not subject to production test.

6



4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 150 1750

10

20

30

40

Ptot=f(TC)

Diagram2:Draincurrent

TC[°C]

ID[A

]

0 25 50 75 100 125 150 1750

10

20

30

40

50

ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

10-1 100 101 10210-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-6 10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tp);parameter:D=tp/T

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Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0.0 0.5 1.0 1.5 2.00

20

40

60

80

100

120

140

160

10 V

5 V

4.5 V

4 V

3.5 V

3.2 V

3 V2.8 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.drain-sourceonresistance

ID[A]

RDS(on

) [m

Ω]

0 40 80 120 1600

5

10

15

20

25

4 V4.5 V

5 V

5.5 V6 V

7 V

10 V

RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 80

20

40

60

80

25 °C150 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Diagram8:Typ.forwardtransconductance

ID[A]

gfs [S]

0 20 40 600

10

20

30

40

50

60

70

gfs=f(ID);Tj=25°C

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Diagram9:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [m

Ω]

-60 -20 20 60 100 140 1800

2

4

6

8

10

12

14

16

18

20

max

typ

RDS(on)=f(Tj);ID=20A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

VGS(th) [V]

-60 -20 20 60 100 140 1800

1

2

3

140 µA

14 µA

VGS(th)=f(Tj);VGS=VDS

Diagram11:Typ.capacitances

VDS[V]

C[p

F]

0 20 40 60101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.0100

101

102

103

25 °C150 °C25°C max150°C max

IF=f(VSD);parameter:Tj

9



Diagram13:Avalanchecharacteristics

tAV[µs]

IAV [A]

100 101 102 10310-1

100

101

102

25 °C

100 °C

125 °C

IAS=f(tAV);RGS=25Ω;parameter:Tj(start)

Diagram14:Typ.gatecharge

Qgate[nC]

VGS [V]

0 5 10 150

1

2

3

4

5

6

7

8

9

10

30 V

12 V48 V

VGS=f(Qgate);ID=20Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-60 -20 20 60 100 140 18050

54

58

62

66

70

VBR(DSS)=f(Tj);ID=1mA

Gate charge waveforms

10



5PackageOutlines

Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches

11



RevisionHistoryBSZ099N06LS5

Revision:2016-08-10,Rev.2.2

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2015-12-23 Release of final version

2.1 2016-04-07 Update gate threshold voltage

2.2 2016-08-10 Update in Qrr and trr

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PublishedbyInfineonTechnologiesAG81726München,Germany©2016InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

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WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

datasheet bsz099n06ls5 - tme...3 optimostm power-transistor,60v bsz099n06ls5 final data sheet rev....

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