datasheet / datenblatt ipw60r280p64 600v coolmos p6 power transistor ipw60r280p6 final data sheet...
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![Page 1: Datasheet / Datenblatt IPW60R280P64 600V CoolMOS P6 Power Transistor IPW60R280P6 Final Data Sheet Rev. 2.0, 2013-08-27 2 Maximum ratings at Tj = 25 C, unless otherwise specified Table](https://reader036.vdocument.in/reader036/viewer/2022081406/5f12f84667fbe44fb84d605d/html5/thumbnails/1.jpg)
MOSFETMetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6600VCoolMOS™P6PowerTransistorIPW60R280P6
DataSheetRev.2.0Final
PowerManagement&Multimarket
![Page 2: Datasheet / Datenblatt IPW60R280P64 600V CoolMOS P6 Power Transistor IPW60R280P6 Final Data Sheet Rev. 2.0, 2013-08-27 2 Maximum ratings at Tj = 25 C, unless otherwise specified Table](https://reader036.vdocument.in/reader036/viewer/2022081406/5f12f84667fbe44fb84d605d/html5/thumbnails/2.jpg)
2
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
TO-247
DrainPin 2, tab
GatePin 1
SourcePin 3
1DescriptionCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™P6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.TheoffereddevicesprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficient,morecompact,lighterandcooler.
Features•IncreasedMOSFETdv/dtruggedness•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss•Veryhighcommutationruggedness•Easytouse/drive•Pb-freeplating,Halogenfreemoldcompound•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20andJESD22)
ApplicationsPFCstages,hardswitchingPWMstagesandresonantswitchingstagesfore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,TelecomandUPS.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V
RDS(on),max 280 mΩ
Qg.typ 26 nC
ID,pulse 39 A
Eoss@400V 3.5 µJ
Body diode di/dt 500 A/µs
Type/OrderingCode Package Marking RelatedLinksIPW60R280P6 PG-TO 247 6R280P6 see Appendix A
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3
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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4
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
2MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current 1) ID --
--
13.88.8 A TC=25°C
TC=100°C
Pulsed drain current 2) ID,pulse - - 39 A TC=25°C
Avalanche energy, single pulse EAS - - 285 mJ ID=2.4A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.43 mJ ID=2.4A; VDD=50V; see table 10
Avalanche current, repetitive IAR - - 2.4 A -
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 104 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current IS - - 12.0 A TC=25°C
Diode pulse current2) IS,pulse - - 39 A TC=25°C
Reverse diode dv/dt 3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8
Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min
1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max3)IdenticallowsideandhighsideswitchwithidenticalRG
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5
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
3Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 1.2 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient forSMD version RthJA - - - °C/W n.a.
Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for
10s
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6
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
4ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3.5 4.0 4.5 V VDS=VGS,ID=0.43mA
Zero gate voltage drain current IDSS --
-10
1- µA VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
0.2520.655
0.280- Ω VGS=10V,ID=5.2A,Tj=25°C
VGS=10V,ID=5.2A,Tj=150°C
Gate resistance RG - 5.5 - Ω f=1MHz,opendrain
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1190 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 54 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energyrelated 1) Co(er) - 44 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time related2)
Co(tr) - 182 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 12 - ns VDD=400V,VGS=13V,ID=6.5A,RG=3.4Ω;seetable9
Rise time tr - 6 - ns VDD=400V,VGS=13V,ID=6.5A,RG=3.4Ω;seetable9
Turn-off delay time td(off) - 36 - ns VDD=400V,VGS=13V,ID=6.5A,RG=3.4Ω;seetable9
Fall time tf - 6 - ns VDD=400V,VGS=13V,ID=6.5A,RG=3.4Ω;seetable9
Table6GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 7 - nC VDD=400V,ID=6.5A,VGS=0to10V
Gate to drain charge Qgd - 9.5 - nC VDD=400V,ID=6.5A,VGS=0to10V
Gate charge total Qg - 25.5 - nC VDD=400V,ID=6.5A,VGS=0to10V
Gate plateau voltage Vplateau - 6.1 - V VDD=400V,ID=6.5A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
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7
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
Table7ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=6.5A,Tj=25°C
Reverse recovery time trr - 263 - ns VR=400V,IF=6.5A,diF/dt=100A/µs;see table 8
Reverse recovery charge Qrr - 2.8 - µC VR=400V,IF=6.5A,diF/dt=100A/µs;see table 8
Peak reverse recovery current Irrm - 22 - A VR=400V,IF=6.5A,diF/dt=100A/µs;see table 8
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8
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 25 50 75 100 125 1500
10
20
30
40
50
60
70
80
90
100
110
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-110-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01single pulse
ZthJC=f(tP);parameter:D=tp/T
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9
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
5
10
15
20
25
30
35
4020 V
10 V
8 V
7 V
6 V
5.5 V
5 V4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
5
10
15
20
2520 V
10 V8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 5 10 15 20 25 300.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
20 V
5.5 V 6 V 6.5 V 7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [Ω]
-50 -25 0 25 50 75 100 125 1500.05
0.15
0.25
0.35
0.45
0.55
0.65
0.75
98% typ
RDS(on)=f(Tj);ID=5.2A;VGS=10V
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10
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 10 120
5
10
15
20
25
30
35
40
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS [V]
0 5 10 15 20 25 300
1
2
3
4
5
6
7
8
9
10
480 V120 V
VGS=f(Qgate);ID=6.5Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.010-1
100
101
102
125 °C 25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS [mJ]
25 50 75 100 125 1500
50
100
150
200
250
300
EAS=f(Tj);ID=2.4A;VDD=50V
![Page 11: Datasheet / Datenblatt IPW60R280P64 600V CoolMOS P6 Power Transistor IPW60R280P6 Final Data Sheet Rev. 2.0, 2013-08-27 2 Maximum ratings at Tj = 25 C, unless otherwise specified Table](https://reader036.vdocument.in/reader036/viewer/2022081406/5f12f84667fbe44fb84d605d/html5/thumbnails/11.jpg)
11
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-75 -50 -25 0 25 50 75 100 125 150 175520
540
560
580
600
620
640
660
680
700
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[p
F]
0 100 200 300 400 500100
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µ
J]
0 100 200 300 400 5000
1
2
3
4
5
Eoss=f(VDS)
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12
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
6TestCircuits
Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trrtF tS
QF QS
dIF / dt
dIrr / dt
VDS(peak)
Qrr = QF +QS
trr =tF +tS
VDS
IF
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform
VDS
VD
V(BR)DS
IDVDS
VDSID
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13
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
7PackageOutlines
Figure1OutlinePG-TO247,dimensionsinmm/inches
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14
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
8AppendixA
Table11RelatedLinks
• IFXCoolMOSTMP6Webpage:www.infineon.com
• IFXCoolMOSTMP6applicationnote:www.infineon.com
• IFXCoolMOSTMP6simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
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15
600VCoolMOS™P6PowerTransistor
IPW60R280P6
Rev.2.0,2013-08-27Final Data Sheet
RevisionHistoryIPW60R280P6
Revision:2013-08-27,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2013-08-27 Release of final version
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Edition2011-08-01PublishedbyInfineonTechnologiesAG81726München,Germany©2011InfineonTechnologiesAGAllRightsReserved.
LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.