datasheet gd25q64c · important notice this document is the property of gigadevice semiconductor...
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3.3V Uniform Sector Dual and Quad Serial Flash GD25Q64C
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GD25Q64C
DATASHEET
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3.3V Uniform Sector Dual and Quad Serial Flash GD25Q64C
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Contents
1. FEATURES ................................................................................................................................................................ 4
2. GENERAL DESCRIPTION ...................................................................................................................................... 5
3. MEMORY ORGANIZATION .................................................................................................................................... 7
4. DEVICE OPERATION .............................................................................................................................................. 8
5. DATA PROTECTION ................................................................................................................................................ 9
6. STATUS REGISTER ............................................................................................................................................... 11
7. COMMANDS DESCRIPTION ............................................................................................................................... 13
7.1. WRITE ENABLE (WREN) (06H) ......................................................................................................................... 16 7.2. WRITE DISABLE (WRDI) (04H) ......................................................................................................................... 16 7.3. WRITE ENABLE FOR VOLATILE STATUS REGISTER (50H) .................................................................................. 17 7.4. READ STATUS REGISTER (RDSR) (05H OR 35H OR 15H) .................................................................................. 17 7.5. WRITE STATUS REGISTER (WRSR) (01H OR 31H OR 11H) ................................................................................ 18 7.6. READ DATA BYTES (READ) (03H) .................................................................................................................... 19 7.7. READ DATA BYTES AT HIGHER SPEED (FAST READ) (0BH) .............................................................................. 19 7.8. DUAL OUTPUT FAST READ (3BH) ...................................................................................................................... 20 7.9. QUAD OUTPUT FAST READ (6BH) ..................................................................................................................... 21 7.10. DUAL I/O FAST READ (BBH) ............................................................................................................................. 22 7.11. QUAD I/O FAST READ (EBH) ............................................................................................................................. 24 7.12. QUAD I/O WORD FAST READ (E7H) .................................................................................................................. 25 7.13. SET BURST WITH WRAP (77H) ........................................................................................................................... 27 7.14. PAGE PROGRAM (PP) (02H) ............................................................................................................................... 28 7.15. QUAD PAGE PROGRAM (32H)............................................................................................................................. 29 7.16. FAST PAGE PROGRAM (FPP) (F2H) .................................................................................................................... 30 7.17. SECTOR ERASE (SE) (20H) ................................................................................................................................. 31 7.18. 32KB BLOCK ERASE (BE) (52H) ....................................................................................................................... 31 7.19. 64KB BLOCK ERASE (BE) (D8H) ...................................................................................................................... 32 7.20. CHIP ERASE (CE) (60/C7H) ............................................................................................................................... 32 7.21. DEEP POWER-DOWN (DP) (B9H) ....................................................................................................................... 33 7.22. RELEASE FROM DEEP POWER-DOWN OR HIGH PERFORMANCE MODE AND READ DEVICE ID (RDI) (ABH)...... 34 7.23. READ MANUFACTURE ID/ DEVICE ID (REMS) (90H) ........................................................................................ 35 7.24. DUAL I/O READ MANUFACTURE ID/ DEVICE ID (92H) ...................................................................................... 36 7.25. QUAD I/O READ MANUFACTURE ID/ DEVICE ID (94H) ..................................................................................... 37 7.26. READ IDENTIFICATION (RDID) (9FH) ................................................................................................................ 38 7.27. HIGH PERFORMANCE MODE (HPM) (A3H) ........................................................................................................ 39 7.28. PROGRAM/ERASE SUSPEND (PES) (75H) ........................................................................................................... 39 7.29. PROGRAM/ERASE RESUME (PER) (7AH) ........................................................................................................... 40 7.30. ERASE SECURITY REGISTERS (44H) ................................................................................................................... 40 7.31. PROGRAM SECURITY REGISTERS (42H) .............................................................................................................. 41 7.32. READ SECURITY REGISTERS (48H)..................................................................................................................... 42
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3.3V Uniform Sector Dual and Quad Serial Flash GD25Q64C
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7.33. ENABLE RESET (66H) AND RESET (99H) ............................................................................................................ 43 7.34. READ SERIAL FLASH DISCOVERABLE PARAMETER (5AH) ................................................................................. 43
8. ELECTRICAL CHARACTERISTICS ................................................................................................................... 48
8.1. POWER-ON TIMING ....................................................................................................................................... 48 8.2. INITIAL DELIVERY STATE ........................................................................................................................... 48 8.3. ABSOLUTE MAXIMUM RATINGS ............................................................................................................... 48 8.4. CAPACITANCE MEASUREMENT CONDITIONS ....................................................................................... 49 8.5. DC CHARACTERISTICS................................................................................................................................. 50 8.6. AC CHARACTERISTICS................................................................................................................................. 51
9. ORDERING INFORMATION ................................................................................................................................. 54
9.1. VALID PART NUMBERS ...................................................................................................................................... 55
10. PACKAGE INFORMATION ............................................................................................................................... 56
10.1. PACKAGE SOP8 208MIL ................................................................................................................................... 56 10.2. PACKAGE DIP8 300MIL .................................................................................................................................... 57 10.3. PACKAGE SOP16 300MIL.................................................................................................................................. 58 10.4. PACKAGE USON8 (4*4MM, 0.45MM THICKNESS) .............................................................................................. 59 10.5. PACKAGE WSON8 (6*5MM) .............................................................................................................................. 60 10.6. PACKAGE WSON8 (8*6MM) .............................................................................................................................. 61 10.7. PACKAGE TFBGA-24BALL (6*4 BALL ARRAY) ................................................................................................ 62
11. REVISION HISTORY .......................................................................................................................................... 63
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1. FEATURES
◆ 64M-bit Serial Flash ◆ Fast Program/Erase Speed
-8192K-byte -Page Program time: 0.6ms typical
-256 bytes per programmable page -Sector Erase time: 50ms typical
-Block Erase time: 0.15/0.20s typical
◆ Standard, Dual, Quad SPI -Chip Erase time: 25s typical
-Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
-Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD# ◆ Flexible Architecture
-Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3 -Uniform Sector of 4K-byte
-Uniform Block of 32/64K-byte
◆ High Speed Clock Frequency
-120MHz for fast read with 30PF load ◆ Low Power Consumption
-Dual I/O Data transfer up to 240Mbits/s -20mA maximum active current
-Quad I/O Data transfer up to 480Mbits/s -5uA maximum power down current
-Continuous Read With 8/16/32/64-byte Wrap
◆ Advanced Security Features(1)
◆ Software/Hardware Write Protection -3*1024-Byte Security Registers With OTP Locks
-Write protect all/portion of memory via software -Discoverable parameters (SFDP) register
-Enable/Disable protection with WP# Pin
-Top/Bottom Block protection ◆ Single Power Supply Voltage
-Full voltage range:2.7~3.6V
◆ Minimum 100,000 Program/Erase Cycles
◆ Package Information
◆ Allows XIP(execute in place)operation(1) -SOP8 (208mil)
-DIP8 (300mil)
◆ Data retention -WSON8 (6*5mm)
-20-year data retention typical -WSON8 (8*6mm)
-TFBGA-24(6*4 ball array)
-SOP16 (300mil)
-USON8 (4*4mm)
Note:
1. Please contact GigaDevice for details.
2. Hardware RESET# PIN is offered on special order. Please contact GigaDevice for details.
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3.3V Uniform Sector Dual and Quad Serial Flash GD25Q64C
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2. GENERAL DESCRIPTION
The GD25Q64C (64M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the
Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O
data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of 480Mbits/s.
Connection Diagram
Pin Description
Pin Name I/O Description
CS# I Chip Select Input
SO (IO1) I/O Data Output (Data Input Output 1)
WP# (IO2) I/O Write Protect Input (Data Input Output 2)
VSS Ground
SI (IO0) I/O Data Input (Data Input Output 0)
SCLK I Serial Clock Input
HOLD# (IO3) I/O Hold Input (Data Input Output 3)
VCC Power Supply
Note: CS# must be driven high if chip is not selected. Please don’t leave CS# floating any time after power is on.
CS#
SO(IO1)
WP#(IO2)
VSS
Top View
VCC
HOLD#(IO3)
SCLK
SI(IO0)
8–LEAD SOP/DIP
1
2
3
4 5
6
7
8 CS#
VSS
Top View
VCC
SCLK
8–LEAD WSON/USON
1
2
3
4 5
6
7
8
SO(IO1)
WP#(IO2)
SI(IO0)
HOLD#(IO3)
CS# VSS
Top View
VCC
SCLK
16-LEAD SOP
1
2
3
4
5
6
7
8 9
10
11
12
13
14
15
16
NC
NC
NC
NC NC
NC
NC
NCVCC WP#
(IO2)HOLD#(IO3)
VSS SI(IO0)
SO(IO1)
CS#SCLK
NC
NC
NC
NC
NC NC
NC NC
NC NC
NC NC NC NC NC NC
A B C D E F
4
3
2
1
24-BALL TFBGA
Top View HOLD#(IO3)
WP#(IO2)
SO(IO1)
SI(IO0)
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3.3V Uniform Sector Dual and Quad Serial Flash GD25Q64C
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Block Diagram
SPICommand &Control Logic
High VoltageGenerators
Page AddressLatch/Counter
StatusRegister
Write ControlLogic
Byte AddressLatch/Counter
Column Decode And256-Byte Page Buffer
Writ
eP
rote
ctLo
gic
and
Row
Dec
ode
FlashMemory
CS#
SCLK
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
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3. MEMORY ORGANIZATION
GD25Q64C Each device has Each block has Each sector has Each page has
8M 64/32K 4K 256 bytes
32K 256/128 16 - pages
2048 16/8 - - sectors
128/256 - - - blocks
Uniform Block Sector Architecture GD25Q64C 64K Bytes Block Sector Architecture
Block Sector Address range
127
2047 7FF000H 7FFFFFH
…… …… ……
2032 7F0000H 7F0FFFH
126
2031 7EF000H 7EFFFFH
…… …… ……
2016 7E0000H 7E0FFFH
……
…… …… ……
…… …… ……
…… …… ……
……
…… …… ……
…… …… ……
…… …… ……
2
47 02F000H 02FFFFH
…… …… ……
32 020000H 020FFFH
1
31 01F000H 01FFFFH
…… …… ……
16 010000H 010FFFH
0
15 00F000H 00FFFFH
…… …… ……
0 000000H 000FFFH
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4. DEVICE OPERATION
SPI Mode Standard SPI The GD25Q64C features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK), Chip Select (CS#), Serial Data
Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3 are supported. Input data is latched on the rising edge
of SCLK and data shifts out on the falling edge of SCLK.
Dual SPI The GD25Q64C supports Dual SPI operation when using the “Dual Output Fast Read” (3BH), “Dual I/O Fast Read” (BBH)
and “Read Manufacture ID/ Device ID Dual I/O” (92H) commands. These commands allow data to be transferred to or from
the device at twice the rate of the standard SPI. When using the Dual SPI command the SI and SO pins become bidirectional
I/O pins: IO0 and IO1.
Quad SPI The GD25Q64C supports Quad SPI operation when using the “Quad Output Fast Read” (6BH), ”Quad I/O Fast Read”(EBH),
“Quad I/O Word Fast Read” (E7H), “Read Manufacture ID/ Device ID Quad I/O” (94H) and “Quad Page Program” (32H)
commands. These commands allow data to be transferred to or from the device at four times the rate of the standard SPI.
When using the Quad SPI command the SI and SO pins become bidirectional I/O pins: IO0 and IO1, and WP# and HOLD#
pins become IO2 and IO3. Quad SPI commands require the non-volatile Quad Enable bit (QE) in Status Register to be set.
Hold The HOLD# function is only available when QE=0, If QE=1, The HOLD# functions is disabled, the pin acts as dedicated
data I/O pin.
The HOLD# signal goes low to stop any serial communications with the device, but doesn’t stop the operation of write status
register, programming, or erasing in progress.
The operation of HOLD, need CS# keep low, and starts on falling edge of the HOLD# signal, with SCLK signal being low (if
SCLK is not being low, HOLD operation will not start until SCLK being low). The HOLD condition ends on rising edge of
HOLD# signal with SCLK being low (If SCLK is not being low, HOLD operation will not end until SCLK being low).
The SO is high impedance, both SI and SCLK don’t care during the HOLD operation, if CS# drives high during HOLD
operation, it will reset the internal logic of the device. To re-start communication with chip, the HOLD# must be at high and
then CS# must be at low.
Figure 1. Hold Condition
HOLD HOLD
CS#
SCLK
HOLD#
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5. DATA PROTECTION
The GD25Q64C provide the following data protection methods:
◆ Write Enable (WREN) command: The WREN command is set the Write Enable Latch bit (WEL). The WEL bit will
return to reset by the following situation:
-Power-Up
-Write Disable (WRDI)
-Write Status Register (WRSR)
-Page Program (PP)
-Sector Erase (SE) / Block Erase (BE) / Chip Erase (CE)
-Software reset (66H+99H)
◆ Software Protection Mode: The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits define the section of the memory
array that can be read but not change.
◆ Hardware Protection Mode: WP# goes low to protect the BP0~BP4 bits and SRP0~1 bits.
◆ Deep Power-Down Mode: In Deep Power-Down Mode, all commands are ignored except the Release from Deep
Power-Down Mode command and reset command (66H+99H). Table1.0 GD25Q64C Protected area size (CMP=0)
Status Register Content Memory Content
BP4 BP3 BP2 BP1 BP0 Blocks Addresses Density Portion X X 0 0 0 NONE NONE NONE NONE
0 0 0 0 1 126 to 127 7E0000H-7FFFFFH 128KB Upper 1/64
0 0 0 1 0 124 to 127 7C0000H-7FFFFFH 256KB Upper 1/32
0 0 0 1 1 120 to 127 780000H-7FFFFFH 512KB Upper 1/16
0 0 1 0 0 112 to 127 700000H-7FFFFFH 1MB Upper 1/8
0 0 1 0 1 96 to 127 600000H-7FFFFFH 2MB Upper 1/4
0 0 1 1 0 64 to 127 400000H-7FFFFFH 4MB Upper 1/2
0 1 0 0 1 0 to 1 000000H-01FFFFH 128KB Lower 1/64
0 1 0 1 0 0 to 3 000000H-03FFFFH 256KB Lower 1/32
0 1 0 1 1 0 to 7 000000H-07FFFFH 512KB Lower 1/16
0 1 1 0 0 0 to 15 000000H-0FFFFFH 1MB Lower 1/8
0 1 1 0 1 0 to 31 000000H-1FFFFFH 2MB Lower 1/4
0 1 1 1 0 0 to 63 000000H-3FFFFFH 4MB Lower 1/2
X X 1 1 1 0 to 127 000000H-7FFFFFH 8MB ALL
1 0 0 0 1 127 7FF000H-7FFFFFH 4KB Top Block
1 0 0 1 0 127 7FE000H-7FFFFFH 8KB Top Block
1 0 0 1 1 127 7FC000H-7FFFFFH 16KB Top Block
1 0 1 0 X 127 7F8000H-7FFFFFH 32KB Top Block
1 0 1 1 0 127 7F8000H-7FFFFFH 32KB Top Block
1 1 0 0 1 0 000000H-000FFFH 4KB Bottom Block
1 1 0 1 0 0 000000H-001FFFH 8KB Bottom Block
1 1 0 1 1 0 000000H-003FFFH 16KB Bottom Block
1 1 1 0 X 0 000000H-007FFFH 32KB Bottom Block
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1 1 1 1 0 0 000000H-007FFFH 32KB Bottom Block
Table1.1 GD25Q64C Protected area size (CMP=1)
Status Register Content Memory Content
BP4 BP3 BP2 BP1 BP0 Blocks Addresses Density Portion X X 0 0 0 ALL 000000H-7FFFFFH ALL ALL
0 0 0 0 1 0 to 125 000000H-7DFFFFH 8064KB Lower 63/64
0 0 0 1 0 0 to 123 000000H-7BFFFFH 7936KB Lower 31/32
0 0 0 1 1 0 to 119 000000H-77FFFFH 7680KB Lower 15/16
0 0 1 0 0 0 to 111 000000H-6FFFFFH 7MB Lower 7/8
0 0 1 0 1 0 to 95 000000H-5FFFFFH 6MB Lower 3/4
0 0 1 1 0 0 to 63 000000H-3FFFFFH 4MB Lower 1/2
0 1 0 0 1 2 to 127 020000H-7FFFFFH 8064KB Upper 63/64
0 1 0 1 0 4 to 127 040000H-7FFFFFH 7936KB Upper 31/32
0 1 0 1 1 8 to 127 080000H-7FFFFFH 7680KB Upper 15/16
0 1 1 0 0 16 to 127 100000H-7FFFFFH 7MB Upper 7/8
0 1 1 0 1 32 to 127 200000H-7FFFFFH 6MB Upper 3/4
0 1 1 1 0 64 to 127 400000H-7FFFFFH 4MB Upper 1/2
X X 1 1 1 NONE NONE NONE NONE
1 0 0 0 1 0 to 127 000000H-7FEFFFH 8188KB L-2047/2048
1 0 0 1 0 0 to 127 000000H-7FDFFFH 8184KB L-1023/1024
1 0 0 1 1 0 to 127 000000H-7FBFFFH 8176KB L-511/512
1 0 1 0 X 0 to 127 000000H-7F7FFFH 8160KB L-255/256
1 0 1 1 0 0 to 127 000000H-7F7FFFH 8160KB L-255/256
1 1 0 0 1 0 to 127 001000H-7FFFFFH 8188KB U-2047/2048
1 1 0 1 0 0 to 127 002000H-7FFFFFH 8184KB U-1023/1024
1 1 0 1 1 0 to 127 004000H-7FFFFFH 8176KB U-511/512
1 1 1 0 X 0 to 127 008000H-7FFFFFH 8160KB U-255/256
1 1 1 1 0 0 to 127 008000H-7FFFFFH 8160KB U-255/256
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6. STATUS REGISTER
S23 S22 S21 S20 S19 S18 S17 S16 Reserved DRV1 DRV0 HPF Reserved Reserved Reserved Reserved
S15 S14 S13 S12 S11 S10 S9 S8
SUS1 CMP LB3 LB2 LB1 SUS2 QE SRP1
S7 S6 S5 S4 S3 S2 S1 S0 SRP0 BP4 BP3 BP2 BP1 BP0 WEL WIP
The status and control bits of the Status Register are as follows: WIP bit. The Write in Progress (WIP) bit indicates whether the memory is busy in program/erase/write status register progress. When
WIP bit sets to 1, means the device is busy in program/erase/write status register progress, when WIP bit sets 0, means
the device is not in program/erase/write status register progress.
WEL bit. The Write Enable Latch (WEL) bit indicates the status of the internal Write Enable Latch. When set to 1 the internal Write
Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no Write Status Register, Program or Erase
command is accepted.
BP4, BP3, BP2, BP1, BP0 bits. The Block Protect (BP4, BP3, BP2, BP1, and BP0) bits are non-volatile. They define the size of the area to be software
protected against Program and Erase commands. These bits are written with the Write Status Register (WRSR) command.
When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are set to 1, the relevant memory area (as defined in
Table1).becomes protected against Page Program (PP), Sector Erase (SE) and Block Erase (BE) commands. The Block
Protect (BP4, BP3, BP2, BP1, and BP0) bits can be written provided that the Hardware Protected mode has not been set.
The Chip Erase (CE) command is executed, if the Block Protect (BP2, BP1, and BP0) bits are 0 and CMP=0 or the Block
Protect (BP2, BP1, and BP0) bits are 1 and CMP=1.
SRP1, SRP0 bits. The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status register. The SRP bits
control the method of write protection: software protection, hardware protection, power supply lock-down or one time
programmable protection.
SRP1 SRP0 #WP Status Register Description
0 0 X Software Protected The Status Register can be written to after a Write Enable
command, WEL=1.(Default)
0 1 0 Hardware Protected WP#=0, the Status Register locked and cannot be written to.
0 1 1 Hardware Unprotected WP#=1, the Status Register is unlocked and can be written
to after a Write Enable command, WEL=1.
1 0 X Power Supply Lock-Down(1)
(2)
Status Register is protected and cannot be written to again
until the next Power-Down, Power-Up cycle.
1 1 X One Time Program(2) Status Register is permanently protected and cannot be
written to.
NOTE:
1. When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to (0, 0) state.
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2. This feature is available on special order (GD25Q64CxxSx). Please contact GigaDevice for details. QE bit. The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad operation. When the QE
bit is set to 0 (Default) the WP# pin and HOLD# pin are enable. When the QE pin is set to 1, the Quad IO2 and IO3 pins are
enabled. (The QE bit should never be set to 1 during standard SPI or Dual SPI operation if the WP# or HOLD# pins are tied
directly to the power supply or ground)
LB3, LB2, LB1, bits. The LB3, LB2, LB1, bits are non-volatile One Time Program (OTP) bits in Status Register (S13-S11) that provide the write
protect control and status to the Security Registers. The default state of LB3-LB1 are 0, the security registers are unlocked.
The LB3-LB1 bits can be set to 1 individually using the Write Register instruction. The LB3-LB1 bits are One Time
Programmable, once they are set to 1, the Security Registers will become read-only permanently.
CMP bit The CMP bit is a non-volatile Read/Write bit in the Status Register (S14). It is used in conjunction with the BP4-BP0 bits to
provide more flexibility for the array protection. Please see the Status registers Memory Protection table for details. The
default setting is CMP=0.
SUS1, SUS2 bit The SUS1 and SUS2 bit are read only bits in the status register (S15 and S10) that are set to 1 after executing an
Program/Erase Suspend (75H) command (The Erase Suspend will set the SUS1 to 1,and the Program Suspend will set the
SUS2 to 1). The SUS1 and SUS2 bit are cleared to 0 by Program/Erase Resume (7AH) command, software reset (66H+99H)
command as well as a power-down, power-up cycle.
HPF bit The High Performance Flag (HPF) bit is read only bit, that indicates the status of High Performance Mode (HPM). When
HPF bit is set to 1, it means the device is in High Performance Mode. When HPF bit is set to 0 (default), it means the device
is not in High Performance Mode.
DRV1, DRV0 bits The DRV1 & DRV0 bits are used to determine the output driver strength for the Read operations.
DRV1, DRV0 Driver Strength
00 100%
01 75% (default)
10 50%
11 25%
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7. COMMANDS DESCRIPTION
All commands, addresses and data are shifted in and out of the device, beginning with the most significant bit on the first
rising edge of SCLK after CS# is driven low. Then, the one-byte command code must be shifted in to the device, with most
significant bit first on SI, and each bit is latched on the rising edges of SCLK.
See Table2, every command sequence starts with a one-byte command code. Depending on the command, this might be
followed by address bytes, or by data bytes, or by both or none. CS# must be driven high after the last bit of the command
sequence has been completed. For the commands of Read, Fast Read, Read Status Register or Release from Deep Power-
Down, and Read Device ID, the shifted-in command sequence is followed by a data-out sequence. CS# can be driven high
after any bit of the data-out sequence is being shifted out.
For the commands of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register, Write Enable, Write
Disable or Deep Power-Down command, CS# must be driven high exactly at a byte boundary, otherwise the command is
rejected, and is not executed. That means CS# must be driven high when the number of clock pulses after CS# being driven
low is an exact multiple of eight. For Page Program, if CS# is driven high at any time the input byte is not a full byte, nothing
will happen and WEL will not be reset. Table2. Commands (Standard/Dual/Quad SPI)
Command Name Byte 1 Byte 2 Byte 3 Byte 4 Byte 5 Byte 6 n-Bytes Write Enable 06H Write Disable 04H Volatile SR Write Enable
50H
Read Status Register-1 05H (S7-S0) (continuous) Read Status Register-2 35H (S15-S8) (continuous) Read Status Register-3 15H (S23-S16) (continuous) Write Status Register-1 01H S7-S0 Write Status Register-2 31H S15-S8 Write Status Register-3 11H S23-S16 Read Data 03H A23-A16 A15-A8 A7-A0 (D7-D0) (Next byte) (continuous) Fast Read 0BH A23-A16 A15-A8 A7-A0 dummy (D7-D0) (continuous) Dual Output Fast Read
3BH A23-A16 A15-A8 A7-A0 dummy (D7-D0)(1) (continuous)
Dual I/O Fast Read
BBH A23-A8(2) A7-A0 M7-M0(2)
(D7-D0)(1) (Next byte)
(Next byte) (continuous)
Quad Output Fast Read
6BH A23-A16 A15-A8 A7-A0 dummy (D7-D0)(3) (continuous)
Quad I/O Fast Read
EBH A23-A0 M7-M0(4)
dummy(5) (D7-D0)(3) (Next byte)
(Next byte) (continuous)
Quad I/O Word Fast Read(7)
E7H A23-A0 M7-M0(4)
dummy(6) (D7-D0)(3) (Next byte)
(Next byte) (continuous)
Page Program 02H A23-A16 A15-A8 A7-A0 D7-D0 Next byte continuous Quad Page Program 32H A23-A16 A15-A8 A7-A0 D7-D0 Next byte continuous Fast Page Program F2H A23-A16 A15-A8 A7-A0 D7-D0 Next byte continuous Sector Erase 20H A23-A16 A15-A8 A7-A0 Block Erase(32K) 52H A23-A16 A15-A8 A7-A0 Block Erase(64K) D8H A23-A16 A15-A8 A7-A0 Chip Erase C7/60
H
Enable Reset 66H Reset 99H Set Burst with Wrap 77H dummy(9)
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W7-W0 Program/Erase Suspend
75H
Program/Erase Resume 7AH Release From Deep Power-Down, And Read Device ID
ABH dummy dummy dummy (DID7-DID0)
(continuous)
Release From Deep Power-Down
ABH
Deep Power-Down B9H Manufacturer/ Device ID
90H dummy dummy 00H (MID7-MID0)
(DID7-DID0)
(continuous)
Manufacturer/ Device ID by Dual I/O
92H A23-A8 A7-A0, M7-M0
(MID7-MID0) (DID7-DID0)
(continuous)
Manufacturer/ Device ID by Quad I/O
94H A23-A0, M7-M0
dummy (10) (MID7-MID0) (DID7-DID0)
(continuous)
Read Identification 9FH
(MID7-MID0)
(JDID15-JDID8)
(JDID7-JDID0)
(continuous)
High Performance
Mode A3H dummy dummy dummy
Read Serial Flash Discoverable Parameter
5AH A23-A16 A15-A8 A7-A0 dummy (D7-D0) (continuous)
Erase Security Registers(8)
44H A23-A16 A15-A8 A7-A0
Program Security Registers(8)
42H A23-A16 A15-A8 A7-A0 D7-D0 D7-D0 continuous
Read Security Registers(8)
48H A23-A16 A15-A8 A7-A0 dummy (D7-D0) (continuous)
NOTE: 1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1) 2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
3. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3,…..)
4. Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
5. Fast Read Quad I/O Data
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IO0 = (x, x, x, x, D4, D0,…)
IO1 = (x, x, x, x, D5, D1,…)
IO2 = (x, x, x, x, D6, D2,…)
IO3 = (x, x, x, x, D7, D3,…)
6. Fast Word Read Quad I/O Data
IO0 = (x, x, D4, D0,…)
IO1 = (x, x, D5, D1,…)
IO2 = (x, x, D6, D2,…)
IO3 = (x, x, D7, D3,…)
7. Fast Word Read Quad I/O Data: the lowest address bit must be 0.
8. Security Registers Address:
Security Register1: A23-A16=00H, A15-A8=10H, A7-A0= Byte Address;
Security Register2: A23-A16=00H, A15-A8=20H, A7-A0= Byte Address;
Security Register3: A23-A16=00H, A15-A8=30H, A7-A0= Byte Address.
9. Dummy bits and Wrap Bits
IO0 = (x, x, x, x, x, x, W4,x)
IO1 = (x, x, x, x, x, x, W5, x)
IO2 = (x, x, x, x, x, x, W6, x)
IO3 = (x, x, x, x, x, x, x, x)
10. Address, Continuous Read Mode bits, Dummy bits, Manufacture ID and Device ID
IO0 = (A20, A16, A12, A8, A4, A0, M4, M0, x, x, x, x, MID4, MID0, DID4, DID0, …)
IO1 = (A21, A17, A13, A9, A5, A1, M5, M1, x, x, x, x, MID5, MID1, DID5, DID1, …)
IO2 = (A22, A18, A14, A10, A6, A2, M6, M2, x, x, x, x, MID6, MID2, DID6, DID2, …)
IO3 = (A23, A19, A15, A11, A7, A3, M7, M3, x, x, x, x, MID7, MID3, DID7, DID3, …)
Table of ID Definitions: GD25Q64C
Operation Code MID7-MID0 ID15-ID8 ID7-ID0
9FH C8 40 17
90H/92H/94H C8 16
ABH 16
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7.1. Write Enable (WREN) (06H) The Write Enable (WREN) command is for setting the Write Enable Latch (WEL) bit. The Write Enable Latch (WEL) bit must
be set prior to every Page Program (PP), Sector Erase (SE), Block Erase (BE), Chip Erase (CE), Write Status Register
(WRSR) and Erase/Program Security Registers command. The Write Enable (WREN) command sequence: CS# goes low
sending the Write Enable command CS# goes high.
Figure 2. Write Enable Sequence Diagram
7.2. Write Disable (WRDI) (04H) The Write Disable command is for resetting the Write Enable Latch (WEL) bit. The Write Disable command sequence: CS#
goes low Sending the Write Disable command CS# goes high. The WEL bit is reset by following condition: Power-up
and upon completion of the Write Status Register, Page Program, Sector Erase, Block Erase, Chip Erase, Erase/Program
Security Registers and Reset commands.
Figure 3. Write Disable Sequence Diagram
Command
0 1 2 3 4 5 6 7
06H
CS#
SCLK
SI
SOHigh-Z
Command
0 1 2 3 4 5 6 7
04H
CS#
SCLK
SI
SOHigh-Z
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7.3. Write Enable for Volatile Status Register (50H) The non-volatile Status Register bits can also be written to as volatile bits. This gives more flexibility to change the system
configuration and memory protection schemes quickly without waiting for the typical non-volatile bit write cycles or affecting
the endurance of the Status Register non-volatile bits. The Write Enable for Volatile Status Register command must be
issued prior to a Write Status Register command and any other commands can't be inserted between them. Otherwise,
Write Enable for Volatile Status Register will be cleared. The Write Enable for Volatile Status Register command will not set
the Write Enable Latch bit, it is only valid for the Write Status Register command to change the volatile Status Register bit
values.
Figure 4. Write Enable for Volatile Status Register Sequence Diagram
7.4. Read Status Register (RDSR) (05H or 35H or 15H) The Read Status Register (RDSR) command is for reading the Status Register. The Status Register may be read at any
time, even while a Program, Erase or Write Status Register cycle is in progress. When one of these cycles is in progress, it
is recommended to check the Write in Progress (WIP) bit before sending a new command to the device. It is also possible
to read the Status Register continuously. For command code “05H” / “35H” / “15H”, the SO will output Status Register bits
S7~S0 / S15-S8 / S23-S16.
Figure 5. Read Status Register Sequence Diagram
Command
0 1 2 3 4 5 6 7
05H or 35H or 15H
CS#
SCLK
SI
SO High-Z
8 9 10 11 12 13 14 15
7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7MSB
Register0/1/2
MSB
Register0/1/2
CS#
SCLK
Command(50H)
SI
SO
0 1 2 3 4 5 6 7
High-Z
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7.5. Write Status Register (WRSR) (01H or 31H or 11H) The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be
accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN)
command has been decoded and executed, the device sets the Write Enable Latch (WEL).
The Write Status Register (WRSR) command has no effect on S23, S20, S19, S18, S17, S16, S15, S10, S1 and S0 of the
Status Register. CS# must be driven high after the eighth bit of the data byte has been latched in. If not, the Write Status
Register (WRSR) command is not executed. As soon as CS# is driven high, the self-timed Write Status Register cycle
(whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read
to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status
Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) is reset.
The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4, BP3, BP2,
BP1, and BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table1. The Write Status
Register (WRSR) command also allows the user to set or reset the Status Register Protect (SRP1 and SRP0) bits in
accordance with the Write Protect (WP#) signal. The Status Register Protect (SRP1 and SRP0) bits and Write Protect (WP#)
signal allow the device to be put in the Hardware Protected Mode. The Write Status Register (WRSR) command is not
executed once the Hardware Protected Mode is entered.
Figure 6. Write Status Register Sequence Diagram
Command
0 1 2 3 4 5 6 7
01H/31H/11H
CS#
SCLK
SI
SO High-Z
8 9 10 11 12 13 14 15
MSB
7 6 5 4 3 2 1 0Status Register in
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7.6. Read Data Bytes (READ) (03H) The Read Data Bytes (READ) command is followed by a 3-byte address (A23-A0), and each bit is latched-in on the rising
edge of SCLK. Then the memory content at that address is shifted out on SO, and each bit is shifted out at a Max frequency
fR on the falling edge of SCLK. The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can, therefore, be read with a single
Read Data Bytes (READ) command. Any Read Data Bytes (READ) command, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 7. Read Data Bytes Sequence Diagram
7.7. Read Data Bytes at Higher Speed (Fast Read) (0BH) The Read Data Bytes at Higher Speed (Fast Read) command is for quickly reading data out. It is followed by a 3-byte
address (A23-A0) and a dummy byte, and each bit is latched-in on the rising edge of SCLK. Then the memory content, at
that address, is shifted out on SO, and each bit is shifted out, at a Max frequency fC3, on the falling edge of SCLK. The first
byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte
of data is shifted out.
Figure 8. Read Data Bytes at Higher Speed Sequence Diagram
Command
0 1 2 3 4 5 6 7
03H
CS#
SCLK
SI
SO High-Z
8 9 10 28 29 30 31 32
MSB
3 2 1 0
34 35 36 3733
23 22 21
7 6 5 4 3 2 1 0
38 39
24-bit address
MSB
Data Out1 Data Out2
Command
0 1 2 3 4 5 6 7
0BH
CS#
SCLK
SI
SO High-Z
8 9 10 28 29 30 31
3 2 1 023 22 21
24-bit address
MSB
34 35 36 3733
6 5 4 3 2 1 0
38 39
Data Out1
32 42 43 44 4541 46 4740
7
6 5 4 3 2 1 07
6 57Data Out2
CS#
SCLK
SI
SOMSB
Dummy Byte
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7.8. Dual Output Fast Read (3BH) The Dual Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, and each bit is latched
in on the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO.
The command sequence is shown in followed Figure 9. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out.
Figure 9. Dual Output Fast Read Sequence Diagram
Command
0 1 2 3 4 5 6 7
3BH
CS#
SCLK
SI
SO High-Z
8 9 10 28 29 30 31
3 2 1 023 22 21
24-bit address
MSB
34 35 36 3733
5 3 1 7 5 3 1
38 39
Data Out1
32 42 43 44 4541 46 4740
7Data Out2
CS#
SCLK
SI
SOMSB
Dummy Clocks4 2 0 6 4 2 06 6
7
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7.9. Quad Output Fast Read (6BH) The Quad Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, and each bit is latched
in on the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO3, IO2, IO1 and IO0.
The command sequence is shown in followed Figure10. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit (QE) of
Status Register (S9) must be set to enable for the Quad Output Fast Read command.
Figure 10. Quad Output Fast Read Sequence Diagram
Command
0 1 2 3 4 5 6 7
6BH
CS#
SCLK
SI(IO0)
SO(IO1) High-Z
8 9 10 28 29 30 31
3 2 1 023 22 21
24-bit address
34 35 36 3733
1 5 1 5 1 5 1
38 39
Byte1
32 42 43 44 4541 46 4740
5
Dummy Clocks0 4 0 4 0 4 04 4
5
WP#(IO2) High-ZHOLD#(IO3) High-Z
CS#
SCLK
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
2 6 2 6 2 6 26 6
3 7 3 7 3 7 37 7Byte2 Byte3 Byte4
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7.10. Dual I/O Fast Read (BBH) The Dual I/O Fast Read command is similar to the Dual Output Fast Read command but with the capability to input the 3-
byte address (A23-0) and a “Continuous Read Mode” byte 2-bit per clock by SI and SO, and each bit is latched in on the
rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The command sequence
is shown in followed Figure11. The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out.
Dual I/O Fast Read with “Continuous Read Mode” The Dual I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode” bits
(M7-4) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M5-4) = (1, 0), then the next Dual I/O
Fast Read command (after CS# is raised and then lowered) does not require the BBH command code. The command
sequence is shown in followed Figure12. If the “Continuous Read Mode” bits (M5-4) do not equal (1, 0), the next command
requires the command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used
to reset (M5-4) before issuing normal command.
Figure 11. Dual I/O Fast Read Sequence Diagram (M5-4≠ (1, 0))
Command
0 1 2 3 4 5 6 7
BBH
CS#
SCLK
SI(IO0)
SO(IO1)
8 9 10 11 12 13 14 15
6 4 2 0 6 4 2 0
16 17 18 19 20 21 22 23
6 4 2 0 6 4
7 5 3 1 7 5 3 1 7 5 3 1 7 5A23-16 A15-8 A7-0 M7-4
CS#23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
SI(IO0)
SO(IO1)
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1
SCLK
6
7Byte1 Byte2 Byte3 Byte4
Dummy
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Figure 12. Dual I/O Fast Read Sequence Diagram (M5-4= (1, 0))
0 1 2 3 4 5 6 7
CS#
SCLK8 9 10 11 12 13 14 15
6 4 2 0 6 4 2 0 6 4 2 0 6 4
7 5 3 1 7 5 3 1 7 5 3 1 7 5A23-16 A15-8 A7-0 M7-4
CS#23 24 25 26 27 28 29 30 31
SI(IO0)
SO(IO1)
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1
SCLK
6
7Byte1 Byte2 Byte3 Byte4
15 16 17 18 19 20 21 22
Dummy
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7.11. Quad I/O Fast Read (EBH) The Quad I/O Fast Read command is similar to the Dual I/O Fast Read command but with the capability to input the 3-byte
address (A23-0) and a “Continuous Read Mode” byte and 4-dummy clock 4-bit per clock by IO0, IO1, IO2, IO3, and each
bit is latched in on the rising edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0, IO1,
IO2, IO3. The command sequence is shown in followed Figure13. The first byte addressed can be at any location. The
address is automatically incremented to the next higher address after each byte of data is shifted out. The Quad Enable bit
(QE) of Status Register (S9) must be set to enable for the Quad I/O Fast read command.
Quad I/O Fast Read with “Continuous Read Mode” The Quad I/O Fast Read command can further reduce command overhead through setting the “Continuous Read Mode”
bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M5-4) = (1, 0), then the next Quad
I/O Fast Read command (after CS# is raised and then lowered) does not require the EBH command code. The command
sequence is shown in followed Figure14. If the “Continuous Read Mode” bits (M5-4) do not equal to (1, 0), the next command
requires the command code, thus returning to normal operation. A “Continuous Read Mode” Reset command can be used
to reset (M5-4) before issuing normal command.
Figure 13. Quad I/O Fast Read Sequence Diagram (M5-4≠ (1, 0))
Figure 14. Quad I/O Fast Read Sequence Diagram (M5-4= (1, 0))
Command
0 1 2 3 4 5 6 7
EBH
CS#
SCLK
SI(IO0)
SO(IO1)
8 9 10 11 12 13 14 15
4 0 4 0 4 0 4 0
16 17 18 19 20 21 22 23
4 0 4 0
5 1 5 1 5 1 5 1 5 1 5 1
A23-16 A15-8 A7-0 M7-0
6 2 6 2 6 2 6 2 6 2 6 2
7 3 7 3 7 3 7 3 7 3 7 3
WP#(IO2)
HOLD#(IO3)
4
5
6
7
Dummy Byte1 Byte2
0 1 2 3 4 5 6 7
CS#
SCLK8 9 10 11 12 13 14 15
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
4 0 4 0
5 1 5 1
6 2 6 2
7 3 7 3
4 0 4 0
5 1 5 1
6 2 6 2
7 3 7 3
4 0 4 0
5 1 5 1
6 2 6 2
7 3 7 3
4
5
6
7
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2
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Quad I/O Fast Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode
The Quad I/O Fast Read command can be used to access a specific portion within a page by issuing “Set Burst with Wrap”
(77H) commands prior to EBH. The “Set Burst with Wrap” (77H) command can either enable or disable the “Wrap Around”
feature for the following EBH commands. When “Wrap Around” is enabled, the data being accessed can be limited to either
an 8/16/32/64-byte section of a 256-byte page. The output data starts at the initial address specified in the command, once
it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around the beginning boundary
automatically until CS# is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache
afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands. The “Set Burst with Wrap”
command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation
while W6-W5 is used to specify the length of the wrap around section within a page. 7.12. Quad I/O Word Fast Read (E7H) The Quad I/O Word Fast Read command is similar to the Quad I/O Fast Read command except that the lowest address bit
(A0) must be equal 0 and there are only 2-dummy clocks. The command sequence is shown in followed Figure15. The first
byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte
of data is shifted out. The Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad I/O Word Fast
read command.
Quad I/O Word Fast Read with “Continuous Read Mode” The Quad I/O Word Fast Read command can further reduce command overhead through setting the “Continuous Read
Mode” bits (M7-0) after the input 3-byte address (A23-A0). If the “Continuous Read Mode” bits (M5-4) = (1, 0), then the next
Quad I/O Word Fast Read command (after CS# is raised and then lowered) does not require the E7H command code. The
command sequence is shown in followed Figure16. If the “Continuous Read Mode” bits (M5-4) do not equal to (1, 0), the
next command requires the first E7H command code, thus returning to normal operation. A “Continuous Read Mode” Reset
command can be used to reset (M5-4) before issuing normal command.
Figure 15. Quad I/O Word Fast Read Sequence Diagram (M5-4≠ (1, 0))
Command
0 1 2 3 4 5 6 7
E7H
CS#
SCLK
SI(IO0)
SO(IO1)
8 9 10 11 12 13 14 15
4 0 4 0 4 0 4 0
16 17 18 19 20 21 22 23
4 0 4 0
5 1 5 1 5 1 5 1 5 1 5 1
A23-16 A15-8 A7-0 M7-0
6 2 6 2 6 2 6 2 6 2 6 2
7 3 7 3 7 3 7 3 7 3 7 3
WP#(IO2)
HOLD#(IO3)
4
5
6
7
Dummy Byte1 Byte2
4 0
5 1
6 2
7 3
Byte3
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Figure 16. Quad I/O Word Fast Read Sequence Diagram (M5-4= (1, 0))
Quad I/O Word Fast Read with “8/16/32/64-Byte Wrap Around” in Standard SPI mode The Quad I/O Word Fast Read command can be used to access a specific portion within a page by issuing “Set Burst with
Wrap” (77H) commands prior to E7H. The “Set Burst with Wrap” (77H) command can either enable or disable the “Wrap
Around” feature for the following E7H commands. When “Wrap Around” is enabled, the data being accessed can be limited
to either an 8/16/32/64-byte section of a 256-byte page. The output data starts at the initial address specified in the command,
once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap around the beginning boundary
automatically until CS# is pulled high to terminate the command.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache
afterwards within a fixed length (8/16/32/64-byte) of data without issuing multiple read commands. The “Set Burst with Wrap”
command allows three “Wrap Bits” W6-W4 to be set. The W4 bit is used to enable or disable the “Wrap Around” operation
while W6-W5 is used to specify the length of the wrap around section within a page.
0 1 2 3 4 5 6 7
CS#
SCLK8 9 10 11 12 13 14 15
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
4 0 4 0
5 1 5 1
6 2 6 2
7 3 7 3
4 0 4 0
5 1 5 1
6 2 6 2
7 3 7 3
4 0 4 0
5 1 5 1
6 2 6 2
7 3 7 3
4
5
6
7
A23-16 A15-8 A7-0 M7-0 Dummy Byte1 Byte2
4 0
5 1
6 2
7 3
Byte3
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7.13. Set Burst with Wrap (77H) The Set Burst with Wrap command is used in conjunction with “Quad I/O Fast Read” and “Quad I/O Word Fast Read”
command to access a fixed length of 8/16/32/64-byte section within a 256-byte page.
The Set Burst with Wrap command sequence: CS# goes low Send Set Burst with Wrap command Send 24 dummy
bits Send 8 bits “Wrap bits” CS# goes high.
W6,W5 W4=0 W4=1 (default)
Wrap Around Wrap Length Wrap Around Wrap Length
0, 0 Yes 8-byte No N/A
0, 1 Yes 16-byte No N/A
1, 0 Yes 32-byte No N/A
1, 1 Yes 64-byte No N/A
If the W6-W4 bits are set by the Set Burst with Wrap command, all the following “Quad I/O Fast Read” and “Quad I/O Word
Fast Read” command will use the W6-W4 setting to access the 8/16/32/64-byte section within any page. To exit the “Wrap
Around” function and return to normal read operation, another Set Burst with Wrap command should be issued to set W4=1.
Figure 17. Set Burst with Wrap Sequence Diagram
Command
0 1 2 3 4 5 6 7
77H
CS#
SCLK
SI(IO0)
SO(IO1)
8 9 10 11 12 13 14 15
x x x x x x 4 x
x x x x x x 5 x
W6-W4
x x x x x x 6 x
x x x x x x x x
WP#(IO2)
HOLD#(IO3)
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7.14. Page Program (PP) (02H) The Page Program (PP) command is for programming the memory. A Write Enable (WREN) command must previously
have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command.
The Page Program (PP) command is entered by driving CS# Low, followed by the command code, three address bytes and
at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data that goes
beyond the end of the current page are programmed from the start address of the same page (from the address whose 8
least significant bits (A7-A0) are all zero). CS# must be driven low for the entire duration of the sequence. The Page Program
command sequence: CS# goes low sending Page Program command 3-byte address on SI at least 1 byte data on
SI CS# goes high. The command sequence is shown in Figure18. If more than 256 bytes are sent to the device, previously
latched data are discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page.
If less than 256 data bytes are sent to device, they are correctly programmed at the requested addresses without having
any effects on the other bytes of the same page. CS# must be driven high after the eighth bit of the last data byte has been
latched in; otherwise the Page Program (PP) command is not executed.
As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Page
Program cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The
Write in Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified
time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Page Program (PP) command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0)
is not executed.
Figure 18. Page Program Sequence Diagram
Command
0 1 2 3 4 5 6 7
02H
CS#
SCLK
SI
8 9 10 28 29 30 31
3 2 1 023 22 21
24-bit address
42 43 44 4541 46 4740 50 51 52 5349 54 5548
6 5 4 3 2 1 07
CS#
SCLK
SI
MSB
Data Byte 2
32 33 34 35
7 6 5 4 3 2 1 0MSB
6 5 4 3 2 1 07 6 5 4 3 2 1 07
Data Byte 1
Data Byte 3 Data Byte 256
MSB MSB MSB
36 37 38 39
2072
2073
2074
2075
2076
2077
2078
2079
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7.15. Quad Page Program (32H) The Quad Page Program command is for programming the memory using four pins: IO0, IO1, IO2, and IO3. To use Quad
Page Program the Quad enable in status register Bit9 must be set (QE=1). A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command. The
quad Page Program command is entered by driving CS# Low, followed by the command code (32H), three address bytes
and at least one data byte on IO pins.
The command sequence is shown in Figure19. If more than 256 bytes are sent to the device, previously latched data are
discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256
data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the
other bytes of the same page. CS# must be driven high after the eighth bit of the last data byte has been latched in; otherwise
the Quad Page Program (PP) command is not executed.
As soon as CS# is driven high, the self-timed Quad Page Program cycle (whose duration is tPP) is initiated. While the Quad
Page Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit.
The Write in Progress (WIP) bit is 1 during the self-timed Quad Page Program cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Quad Page Program command applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0)
is not executed.
Figure 19. Quad Page Program Sequence Diagram
Command
0 1 2 3 4 5 6 7
32H
CS#
SCLK8 9 10 28 29 30 31
3 2 1 023 22 21
24-bit address
32 33 34 35
4 0MSB
36 37 38 39
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
Byte1 Byte2
CS#
SCLK
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
42 43 44 4541 46 4740 50 51 52 5349 54 5548 536
537
538
539
540
541
542
543
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
Byte114 0
5 1
6 2
7 3
Byte124 0
5 1
6 2
7 3
Byte253
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
4 0
5 1
6 2
7 3
Byte256
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7.16. Fast Page Program (FPP) (F2H) The Fast Page Program (FPP) command is used to program the memory. A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit before sending the Page Program command.
The Fast Page Program (FPP) command is entered by driving CS# Low, followed by the command code, three address
bytes and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are not all zero, all transmitted data
that goes beyond the end of the current page are programmed from the start address of the same page (from the address
whose 8 least significant bits (A7-A0) are all zero). CS# must be driven low for the entire duration of the sequence.
The Page Program command sequence: CS# goes low sending Page Program command 3-byte address on SI at
least 1 byte data on SI CS# goes high.
The command sequence is shown in Figure 20. If more than 256 bytes are sent to the device, previously latched data are
discarded and the last 256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256
data bytes are sent to device, they are correctly programmed at the requested addresses without having any effects on the
other bytes of the same page. CS# must be driven high after the eighth bit of the last data byte has been latched in; otherwise
the Fast Page Program (FPP) command is not executed.
As soon as CS# is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated. While the Page
Program cycle is in progress, the Status Register may be read to check the value of the Write In Progress (WIP) bit. The
Write In Progress (WIP) bit is 1 during the self-timed Page Program cycle, and is 0 when it is completed. At some unspecified
time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Fast Page Program (FPP) command is not executed when it is applied to a page protected by the Block Protect (BP4,
BP3, BP2, BP1, BP0).
Figure 20. Fast Page Program Sequence Diagram
Command
0 1 2 3 4 5 6 7
F2H
CS#
SCLK
SI
8 9 10 28 29 30 31
3 2 1 023 22 21
24-bit address
42 43 44 4541 46 4740 50 51 52 5349 54 5548
6 5 4 3 2 1 07
CS#
SCLK
SI
MSB
Data Byte 2
32 33 34 35
7 6 5 4 3 2 1 0MSB
6 5 4 3 2 1 07 6 5 4 3 2 1 07
Data Byte 1
Data Byte 3 Data Byte 256
MSB MSB MSB
36 37 38 39
2072
2073
2074
2075
2076
2077
2078
2079
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7.17. Sector Erase (SE) (20H) The Sector Erase (SE) command is used to erase all the data of the chosen sector. A Write Enable (WREN) command
must previously have been executed to set the Write Enable Latch (WEL) bit. The Sector Erase (SE) command is entered
by driving CS# low, followed by the command code, and 3-address byte on SI. Any address inside the sector is a valid
address for the Sector Erase (SE) command. CS# must be driven low for the entire duration of the sequence.
The Sector Erase command sequence: CS# goes low sending Sector Erase command 3-byte address on SI CS#
goes high. The command sequence is shown below. CS# must be driven high after the eighth bit of the last address byte
has been latched in; otherwise the Sector Erase (SE) command is not executed. As soon as CS# is driven high, the self-
timed Sector Erase cycle (whose duration is tSE) is initiated. While the Sector Erase cycle is in progress, the Status Register
may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed
Sector Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed, the Write Enable
Latch (WEL) bit is reset. A Sector Erase (SE) command applied to a sector which is protected by the Block Protect (BP4,
BP3, BP2, BP1, and BP0) bit (see Table1&1a) is not executed.
Figure 21. Sector Erase Sequence Diagram
7.18. 32KB Block Erase (BE) (52H) The 32KB Block Erase (BE) command is used to erase all the data of the chosen block. A Write Enable (WREN) command
must previously have been executed to set the Write Enable Latch (WEL) bit. The 32KB Block Erase (BE) command is
entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address inside the block
is a valid address for the 32KB Block Erase (BE) command. CS# must be driven low for the entire duration of the sequence.
The 32KB Block Erase command sequence: CS# goes low sending 32KB Block Erase command 3-byte address on
SI CS# goes high. The command sequence is shown below. CS# must be driven high after the eighth bit of the last
address byte has been latched in; otherwise the 32KB Block Erase (BE) command is not executed. As soon as CS# is
driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress,
the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1
during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset. A 32KB Block Erase (BE) command applied to a block which is
protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits (see Table1&1a) is not executed.
Figure 22. 32KB Block Erase Sequence Diagram
Command
0 1 2 3 4 5 6 7
20H
CS#
SCLK
SI
8 9 29 30 31
MSB2 1 0
24 Bits Address23 22
Command
0 1 2 3 4 5 6 7
52H
CS#
SCLK
SI
8 9 29 30 31
MSB2 1 0
24 Bits Address23 22
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7.19. 64KB Block Erase (BE) (D8H) The 64KB Block Erase (BE) command is used to erase all the data of the chosen block. A Write Enable (WREN) command
must previously have been executed to set the Write Enable Latch (WEL) bit. The 64KB Block Erase (BE) command is
entered by driving CS# low, followed by the command code, and three address bytes on SI. Any address inside the block
is a valid address for the 64KB Block Erase (BE) command. CS# must be driven low for the entire duration of the sequence.
The 64KB Block Erase command sequence: CS# goes low sending 64KB Block Erase command 3-byte address on
SI CS# goes high. The command sequence is shown below. CS# must be driven high after the eighth bit of the last
address byte has been latched in; otherwise the 64KB Block Erase (BE) command is not executed. As soon as CS# is
driven high, the self-timed Block Erase cycle (whose duration is tBE) is initiated. While the Block Erase cycle is in progress,
the Status Register may be read to check the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1
during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch (WEL) bit is reset. A 64KB Block Erase (BE) command applied to a block which is
protected by the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits (see Table1&1a) is not executed.
Figure 23. 64KB Block Erase Sequence Diagram
7.20. Chip Erase (CE) (60/C7H) The Chip Erase (CE) command is used to erase all the data of the chip. A Write Enable (WREN) command must previously
have been executed to set the Write Enable Latch (WEL) bit .The Chip Erase (CE) command is entered by driving CS# Low,
followed by the command code on Serial Data Input (SI). CS# must be driven Low for the entire duration of the sequence.
The Chip Erase command sequence: CS# goes low sending Chip Erase command CS# goes high. The command
sequence is shown below. CS# must be driven high after the eighth bit of the command code has been latched in; otherwise
the Chip Erase command is not executed. As soon as CS# is driven high, the self-timed Chip Erase cycle (whose duration
is tCE) is initiated. While the Chip Erase cycle is in progress, the Status Register may be read to check the value of the Write
in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Chip Erase cycle, and is 0 when it is
completed. At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Chip
Erase (CE) command is executed if the Block Protect (BP2, BP1, and BP0) bits are 0 and CMP=0 or the Block Protect (BP2,
BP1, and BP0) bits are 1 and CMP=1. The Chip Erase (CE) command is ignored if one or more sectors are protected.
Figure 24. Chip Erase Sequence Diagram
Command
0 1 2 3 4 5 6 7
60H or C7H
CS#
SCLK
SI
Command
0 1 2 3 4 5 6 7
D8H
CS#
SCLK
SI
8 9 29 30 31
MSB2 1 0
24 Bits Address23 22
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7.21. Deep Power-Down (DP) (B9H) Executing the Deep Power-Down (DP) command is the only way to put the device in the lowest consumption mode (the
Deep Power-Down Mode). It can also be used as an extra software protection mechanism, while the device is not in active
use, since in this mode, the device ignores all Write, Program and Erase commands.
Driving CS# high deselects the device, and puts the device in the Standby Mode (if there is no internal cycle currently in
progress). But this mode is not the Deep Power-Down Mode. The Deep Power-Down Mode can only be entered by
executing the Deep Power-Down (DP) command. Once the device has entered the Deep Power-Down Mode, all commands
are ignored except the Release from Deep Power-Down and Read Device ID (RDI) command or software reset command.
The Release from Deep Power-Down and Read Device ID (RDI) command releases the device from Deep power-Down
mode , also allows the Device ID of the device to be output on SO.
The Deep Power-Down Mode automatically stops at Power-Down, and the device is in the Standby Mode after Power-Up.
The Deep Power-Down command sequence: CS# goes low sending Deep Power-Down command CS# goes high.
The command sequence is shown below. CS# must be driven high after the eighth bit of the command code has been
latched in; otherwise the Deep Power-Down (DP) command is not executed. As soon as CS# is driven high, it requires a
delay of tDP before the supply current is reduced to ICC2 and the Deep Power-Down Mode is entered. Any Deep Power-
Down (DP) command, while an Erase, Program or Write cycle is in progress, is rejected without having any effects on the
cycle that is in progress.
Figure 25. Deep Power-Down Sequence Diagram
Command
0 1 2 3 4 5 6 7
B9H
CS#
SCLK
SI
tDP
Stand-by mode Deep Power-down mode
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7.22. Release from Deep Power-Down or High Performance Mode and Read Device ID (RDI) (ABH)
The Release from Power-Down or High Performance Mode / Device ID command is a multi-purpose command. It can be used
to release the device from the Power-Down state or High Performance Mode or obtain the devices electronic identification
(ID) number.
To release the device from the Power-Down state or High Performance Mode, the command is issued by driving the CS#
pin low, shifting the instruction code “ABH” and driving CS# high as shown in Figure26. Release from Power-Down will
take the time duration of tRES1 (See AC Characteristics) before the device will resume normal operation and other
command are accepted. The CS# pin must remain high during the tRES1 time duration.
When used only to obtain the Device ID while not in the Power-Down state, the command is initiated by driving the CS#
pin low and shifting the instruction code “ABH” followed by 3-dummy byte. The Device ID bits are then shifted out on the
falling edge of SCLK with most significant bit (MSB) first as shown in Figure27. The Device ID value is listed in
Manufacturer and Device Identification table. The Device ID can be read continuously. The command is completed by
driving CS# high.
When used to release the device from the Power-Down state and obtain the Device ID, the command is the same as
previously described, and shown in Figure27, except that after CS# is driven high it must remain high for a time duration
of tRES2 (See AC Characteristics). After this time duration the device will resume normal operation and other command will
be accepted. If the Release from Power-Down / Device ID command is issued while an Erase, Program or Write cycle is
in process (when WIP equal 1) the command is ignored and will not have any effects on the current cycle.
Figure 26. Release Power-Down Sequence or High Performance Mode Sequence Diagram
Figure 27. Release Power-Down/Read Device ID Sequence Diagram
Command
0 1 2 3 4 5 6 7
ABH
CS#
SCLK
SI
RES1
Stand-by modeDeep Power-down mode
t
Command
0 1 2 3 4 5 6 7
ABH
CS#
SCLK
SI
8 9 29 30 31
MSB2 1 0
3 Dummy Bytes23 22
32 33 34 35 36 37 38
7 6 5 4 3 2 1 0SO
MSB
t RES2
Stand-by ModeDeep Power-down Mode
High-Z Device ID
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7.23. Read Manufacture ID/ Device ID (REMS) (90H) The Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device ID command that
provides both the JEDEC assigned Manufacturer ID and the specific Device ID.
The command is initiated by driving the CS# pin low and shifting the command code “90H” followed by a 24-bit address
(A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCLK with
most significant bit (MSB) first as shown below. If the 24-bit address is initially set to 000001H, the Device ID will be read
first.
Figure 28. Read Manufacture ID/ Device ID Sequence Diagram
Command
0 1 2 3 4 5 6 7
90H
CS#
SCLK
SI
SO High-Z
8 9 10 28 29 30 31
3 2 1 023 22 21
24-bit address
MSB
34 35 36 3733
6 5 4 3 2 1 0
38 3932 42 43 44 4541 46 4740
7Device ID
CS#
SCLK
SI
SOMSB
Manufacturer ID6 5 4 3 2 1 07
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7.24. Dual I/O Read Manufacture ID/ Device ID (92H) The Dual I/O Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device ID
command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by dual I/O.
The command is initiated by driving the CS# pin low and shifting the command code “92H” followed by a 24-bit address
(A23-A0) of 000000H. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCLK with
most significant bit (MSB) first as shown in Figure29. If the 24-bit address is initially set to 000001H, the Device ID will be
read first.
Figure 29. Read Manufacture ID/ Device ID Dual I/O Sequence Diagram
Command
0 1 2 3 4 5 6 7
92H
CS#
SCLK
SI(IO0)
SO(IO1)
8 9 10 11 12 13 14 15
6 4 2 0 6 4 2 0
16 17 18 19 20 21 22 23
6 4 2 0 6 4 2 0
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1A23-16 A15-8 A7-0 M7-0
CS#23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39
SI(IO0)
SO(IO1)
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1
SCLK
MFR ID Device ID
40 41 42 43
6 4 2 0
7 5 3 1
44 45 46 47
6 4 2 0
7 5 3 1MFR ID(Repeat)
Device ID(Repeat)
MFR ID(Repeat)
Device ID(Repeat)
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7.25. Quad I/O Read Manufacture ID/ Device ID (94H) The Quad I/O Read Manufacturer/Device ID command is an alternative to the Release from Power-Down / Device ID
command that provides both the JEDEC assigned Manufacturer ID and the specific Device ID by quad I/O.
The command is initiated by driving the CS# pin low and shifting the command code “94H” followed by a 24-bit address
(A23-A0) of 000000H, and 4 dummy clocks. After which, the Manufacturer ID and the Device ID are shifted out on the falling
edge of SCLK with most significant bit (MSB) first as shown in Figure30. If the 24-bit address is initially set to 000001H, the
Device ID will be read first.
Figure 30. Read Manufacture ID/ Device ID Quad I/O Sequence Diagram
Command
0 1 2 3 4 5 6 7
94H
CS#
SCLK
SI(IO0)
SO(IO1)
8 9 10 11 12 13 14 15
4 0 4 0 4 0 4 0
16 17 18 19 20 21 22 23
4 0 4 0
5 1 5 1 5 1 5 1 5 1 5 1
A23-16 A15-8 A7-0 M7-0
6 2 6 2 6 2 6 2 6 2 6 2
7 3 7 3 7 3 7 3 7 3 7 3
WP#(IO2)
HOLD#(IO3)
Dummy MFR ID DID
CS#
SCLK
SI(IO0)
SO(IO1)
WP#(IO2)
HOLD#(IO3)
24 25 26 27 28 29 30 31
4 0 4 0
5 1 5 1
6 2 6 2
7 3 7 3
MFR ID(Repeat)
DID(Repeat)
4 0 4 0
5 1 5 1
6 2 6 2
7 3 7 3
MFR ID(Repeat)
DID(Repeat)
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7.26. Read Identification (RDID) (9FH) The Read Identification (RDID) command allows the 8-bit manufacturer identification to be read, followed by two bytes of
device identification. The device identification indicates the memory type in the first byte, and the memory capacity of the
device in the second byte. The Read Identification (RDID) command while an Erase or Program cycle is in progress is not
decoded, and has no effect on the cycle that is in progress. The Read Identification (RDID) command should not be issued
while the device is in Deep Power-Down Mode.
The device is first selected by driving CS# low. Then, the 8-bit command code for the command is shifted in. This is followed
by the 24-bit device identification stored in the memory. Each bit is shifted out on the falling edge of Serial Clock. The
command sequence is shown in Figure31. The Read Identification (RDID) command is terminated by driving CS# high at
any time during data output. When CS# is driven high, the device is in the Standby Mode. Once in the Standby Mode, the
device waits to be selected, so that it can receive, decode and execute commands.
Figure 31. Read Identification ID Sequence Diagram
0 1 2 3 4 5 6 7
CS#
SCLK
SI
SO
8 9 10
MSB
18 19 20 2117
6 5 4 3 2 1 0
22 2316 26 27 28 2925 30 3124
7Capacity
JDID7-JDID0
CS#
SCLK
SI
SO
MSBMemory Type JDID15-JDID8
6 5 4 3 2 1 07
11 12 13 14 15
9FH
6 5 4 3 2 1 07Manufacturer ID
MSB
Command
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7.27. High Performance Mode (HPM) (A3H) The High Performance Mode (HPM) command must be executed prior to Dual or Quad I/O commands when operating
at high frequencies (see fR and fC1 in AC Electrical Characteristics). This command allows pre-charging of internal
charge pumps so the voltages required for accessing the flash memory array are readily available. The command
sequence: CS# goes lowSending A3H command Sending 3-dummy byteCS# goes high. After the HPM
command is executed, the device will maintain a slightly higher standby current (Icc9) than standard SPI operation. The
Release from Power-Down or HPM command (ABH) can be used to return to standard SPI standby current (Icc1). In
addition, Power-Down command (B9H) will also release the device from HPM mode back to standard SPI standby state.
Figure 32. High Performance Mode Sequence Diagram
7.28. Program/Erase Suspend (PES) (75H) The Program/Erase Suspend command “75H”, allows the system to interrupt a page program or sector/block erase
operation and then read data from any other sector or block. The Write Status Register command (01H/31H/11H) and
Erase/Program Security Registers command (44H,42H) and Erase commands (20H, 52H, D8H, C7H, 60H) and Page Program
command (02H / 32H) are not allowed during Program suspend. The Write Status Register command (01H/31H/11H) and
Erase Security Registers command (44H) and Erase commands (20H, 52H, D8H, C7H, 60H) are not allowed during Erase
suspend. Program/Erase Suspend is valid only during the page program or sector/block erase operation. A maximum of
time of “tsus” (See AC Characteristics) is required to suspend the program/erase operation.
The Program/Erase Suspend command will be accepted by the device only if the SUS2/SUS1 bit in the Status Register
equal to 0 and WIP bit equal to 1 while a Page Program or a Sector or Block Erase operation is on-going. If the SUS2/SUS1
bit equal to 1 or WIP bit equal to 0, the Suspend command will be ignored by the device. The WIP bit will be cleared from 1
to 0 within “tsus” and the SUS2/SUS1 bit will be set from 0 to 1 immediately after Program/Erase Suspend. A power-off
during the suspend period will reset the device and release the suspend state. The command sequence is show below.
Figure 33. Program/Erase Suspend Sequence Diagram
Command
0 1 2 3 4 5 6 7
75H
CS#
SCLK
SI
SOHigh-Z
tSUS
Accept read command
Command
0 1 2 3 4 5 6 7
A3H
CS#
SCLK
SI
8 9 29 30 31
MSB2 1 0
3 Dummy Bytes23 22
SOHigh Performance Mode
HPMt
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7.29. Program/Erase Resume (PER) (7AH) The Program/Erase Resume command must be written to resume the program or sector/block erase operation after a
Program/Erase Suspend command. The Program/Erase Resume command will be accepted by the device only if the
SUS2/SUS1 bit equal to 1 and the WIP bit equal to 0. After issued the SUS2/SUS1 bit in the status register will be cleared
from 1 to 0 immediately, the WIP bit will be set from 0 to 1 within 200ns and the Sector or Block will complete the erase
operation or the page will complete the program operation. The Program/Erase Resume command will be ignored unless a
Program/Erase Suspend is active. The command sequence is show below.
Figure 34. Program/Erase Resume Sequence Diagram
7.30. Erase Security Registers (44H) The GD25Q64C provides three 1024-byte Security Registers which can be erased and programmed individually. These
registers may be used by the system manufacturers to store security and other important information separately from the
main memory array.
The Erase Security Registers command is similar to Sector/Block Erase command. A Write Enable (WREN) command must
previously have been executed to set the Write Enable Latch (WEL) bit.
The Erase Security Registers command sequence: CS# goes low sending Erase Security Registers command 3-byte
address on SI CS# goes high. The command sequence is shown below. CS# must be driven high after the eighth bit of
the last address byte has been latched in; otherwise the Erase Security Registers command is not executed. As soon as
CS# is driven high, the self-timed Erase Security Registers cycle (whose duration is tSE) is initiated. While the Erase Security
Registers cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP) bit. The
Write in Progress (WIP) bit is 1 during the self-timed Erase Security Registers cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset. The Security Registers Lock Bit
(LB3-1) in the Status Register can be used to OTP protect the security registers. Once the LB bit is set to 1, the Security
Register will be permanently locked; the Erase Security Registers command will be ignored.
Address A23-16 A15-12 A11-10 A9-0 Security Register #1 00H 0 0 0 x 0 0 Byte Address Security Register #2 00H 0 0 1 0 0 0 Byte Address Security Register #3 00H 0 0 1 1 0 0 Byte Address
Figure 35. Erase Security Registers command Sequence Diagram
Command
0 1 2 3 4 5 6 7
44H
CS#
SCLK
SI
8 9 29 30 31
MSB2 1 0
24 Bits Address23 22
Command
0 1 2 3 4 5 6 7
7AH
CS#
SCLK
SI
SO Resume Erase/Program
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7.31. Program Security Registers (42H) The Program Security Registers command is similar to the Page Program command. Each security register contains four
pages content. A Write Enable (WREN) command must previously have been executed to set the Write Enable Latch (WEL)
bit before sending the Program Security Registers command. The Program Security Registers command is entered by
driving CS# Low, followed by the command code (42H), three address bytes and at least one data byte on SI. As soon as
CS# is driven high, the self-timed Program Security Registers cycle (whose duration is tPP) is initiated. While the Program
Security Registers cycle is in progress, the Status Register may be read to check the value of the Write in Progress (WIP)
bit. The Write in Progress (WIP) bit is 1 during the self-timed Program Security Registers cycle, and is 0 when it is completed.
At some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
If the Security Registers Lock Bit (LB3-1) is set to 1, the Security Register will be permanently locked. Program Security
Registers command will be ignored.
Address A23-16 A15-12 A11-10 A9-0 Security Register #1 00H 0 0 0 x 0 0 Byte Address Security Register #2 00H 0 0 1 0 0 0 Byte Address Security Register #3 00H 0 0 1 1 0 0 Byte Address
Figure 36. Program Security Registers command Sequence Diagram
Command
0 1 2 3 4 5 6 7
42H
CS#
SCLK
SI
8 9 10 28 29 30 31
3 2 1 023 22 21
24-bit address
42 43 44 4541 46 4740 50 51 52 5349 54 5548
6 5 4 3 2 1 07
CS#
SCLK
SI
MSB
Data Byte 2
32 33 34 35
7 6 5 4 3 2 1 0MSB
6 5 4 3 2 1 07 6 5 4 3 2 1 07
Data Byte 1
Data Byte 3 Data Byte 1024
MSB MSB MSB
36 37 38 39
8216
8217
8218
8219
8220
8221
8222
8223
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7.32. Read Security Registers (48H) The Read Security Registers command is similar to Fast Read command. The command is followed by a 3-byte address
(A23-A0) and a dummy byte, and each bit is latched-in on the rising edge of SCLK. Then the memory content, at that
address, is shifted out on SO, and each bit is shifted out, at a Max frequency fC, on the falling edge of SCLK. The first byte
addressed can be at any location. The address is automatically incremented to the next higher address after each byte of
data is shifted out. Once the A9-A0 address reaches the last byte of the register (Byte 3FFH), it will reset to 000H, the
command is completed by driving CS# high.
Address A23-16 A15-12 A11-10 A9-0 Security Register #1 00H 0 0 0 x 0 0 Byte Address Security Register #2 00H 0 0 1 0 0 0 Byte Address Security Register #3 00H 0 0 1 1 0 0 Byte Address
Figure 37. Read Security Registers command Sequence Diagram
Command
0 1 2 3 4 5 6 7
48H
CS#
SCLK
SI
SO High-Z
8 9 10 28 29 30 31
3 2 1 023 22 21
24-bit address
MSB
34 35 36 3733
6 5 4 3 2 1 0
38 39
Data Out1
32 42 43 44 4541 46 4740
7
6 5 4 3 2 1 07
6 57Data Out2
CS#
SCLK
SI
SOMSB
Dummy Byte
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7.33. Enable Reset (66H) and Reset (99H) If the Reset command is accepted, any on-going internal operation will be terminated and the device will return to its default
power-on state and lose all the current volatile settings, such as Volatile Status Register bits, Write Enable Latch status
(WEL), Program/Erase Suspend status, Read Parameter setting (P7-P0), Continuous Read Mode bit setting (M7-M0) and
Wrap Bit Setting (W6-W4).
The “Reset (99H)” command sequence as follow: CS# goes low Sending Enable Reset command CS# goes high
CS# goes low Sending Reset command CS# goes high. Once the Reset command is accepted by the device, the
device will take approximately tRST/tRST_E (30μs/12ms) to reset. During this period, no command will be accepted. Data
corruption may happen if there is an on-going or suspended internal Erase or Program operation when Reset command
sequence is accepted by the device. It is recommended to check the BUSY bit and the SUS bit in Status Register before
issuing the Reset command sequence.
Figure 38. Enable Reset and Reset command Sequence Diagram
7.34. Read Serial Flash Discoverable Parameter (5AH) The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional and
feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables can be
interrogated by host system software to enable adjustments needed to accommodate divergent features from multiple
vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on CFI. SFDP is a standard
of JEDEC Standard No.216.
Figure 39. Read Serial Flash Discoverable Parameter command Sequence Diagram
Command
0 1 2 3 4 5 6 7
66H
CS#
SCLK
SI
SO High-Z
Command
0 1 2 3 4 5 6 7
99H
Command
0 1 2 3 4 5 6 7
5AH
CS#
SCLK
SI
SO High-Z
8 9 10 28 29 30 31
3 2 1 023 22 21
24-bit address
MSB
34 35 36 3733
6 5 4 3 2 1 0
38 39
Data Out1
32 42 43 44 4541 46 4740
7
6 5 4 3 2 1 07
6 57Data Out2
CS#
SCLK
SI
SOMSB
Dummy Byte
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Table3. Signature and Parameter Identification Data Values
Description Comment Add(H)
(Byte)
DW Add
(Bit)
Data Data
SFDP Signature Fixed:50444653H 00H 07:00 53H 53H
01H 15:08 46H 46H
02H 23:16 44H 44H
03H 31:24 50H 50H
SFDP Minor Revision Number Start from 00H 04H 07:00 00H 00H
SFDP Major Revision Number Start from 01H 05H 15:08 01H 01H
Number of Parameters Headers Start from 00H 06H 23:16 01H 01H
Unused Contains 0xFFH and can never be
changed
07H 31:24 FFH FFH
ID number (JEDEC) 00H: It indicates a JEDEC specified
header
08H 07:00 00H 00H
Parameter Table Minor Revision
Number
Start from 0x00H 09H 15:08 00H 00H
Parameter Table Major Revision
Number
Start from 0x01H 0AH 23:16 01H 01H
Parameter Table Length
(in double word)
How many DWORDs in the
Parameter table
0BH 31:24 09H 09H
Parameter Table Pointer (PTP) First address of JEDEC Flash
Parameter table
0CH 07:00 30H 30H
0DH 15:08 00H 00H
0EH 23:16 00H 00H
Unused Contains 0xFFH and can never be
changed
0FH 31:24 FFH FFH
ID Number
(GigaDevice Manufacturer ID)
It is indicates GigaDevice
manufacturer ID
10H 07:00 C8H C8H
Parameter Table Minor Revision
Number
Start from 0x00H 11H 15:08 00H 00H
Parameter Table Major Revision
Number
Start from 0x01H 12H 23:16 01H 01H
Parameter Table Length
(in double word)
How many DWORDs in the
Parameter table
13H 31:24 03H 03H
Parameter Table Pointer (PTP) First address of GigaDevice Flash
Parameter table
14H 07:00 60H 60H
15H 15:08 00H 00H
16H 23:16 00H 00H
Unused Contains 0xFFH and can never be
changed
17H 31:24 FFH FFH
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Table4. Parameter Table (0): JEDEC Flash Parameter Tables
Description Comment Add(H)
(Byte)
DW Add
(Bit)
Data Data
Block/Sector Erase Size
00: Reserved; 01: 4KB erase;
10: Reserved;
11: not support 4KB erase
30H
01:00 01b
E5H
Write Granularity 0: 1Byte, 1: 64Byte or larger 02 1b
Write Enable Instruction
Requested for Writing to Volatile
Status Registers
0: Nonvolatile status bit
1: Volatile status bit
(BP status register bit)
03 0b
Write Enable Opcode Select for
Writing to Volatile Status
Registers
0: Use 50H Opcode,
1: Use 06H Opcode,
Note: If target flash status register is
Nonvolatile, then bits 3 and 4 must
be set to 00b.
04 0b
Unused Contains 111b and can never be
changed 07:05 111b
4KB Erase Opcode 31H 15:08 20H 20H
(1-1-2) Fast Read 0=Not support, 1=Support
32H
16 1b
F1H
Address Bytes Number used in
addressing flash array
00: 3Byte only, 01: 3 or 4Byte,
10: 4Byte only, 11: Reserved 18:17 00b
Double Transfer Rate (DTR)
clocking 0=Not support, 1=Support 19 0b
(1-2-2) Fast Read 0=Not support, 1=Support 20 1b
(1-4-4) Fast Read 0=Not support, 1=Support 21 1b
(1-1-4) Fast Read 0=Not support, 1=Support 22 1b
Unused 23 1b
Unused 33H 31:24 FFH FFH
Flash Memory Density 37H:34H 31:00 03FFFFFFH
(1-4-4) Fast Read Number of Wait
states
0 0000b: Wait states (Dummy
Clocks) not support 38H
04:00 00100b
44H (1-4-4) Fast Read Number of
Mode Bits 000b:Mode Bits not support 07:05 010b
(1-4-4) Fast Read Opcode 39H 15:08 EBH EBH
(1-1-4) Fast Read Number of Wait
states
0 0000b: Wait states (Dummy
Clocks) not support 3AH
20:16 01000b
08H (1-1-4) Fast Read Number of
Mode Bits 000b:Mode Bits not support 23:21 000b
(1-1-4) Fast Read Opcode 3BH 31:24 6BH 6BH
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Description Comment Add(H)
(Byte)
DW Add
(Bit) Data Data
(1-1-2) Fast Read Number of Wait
states
0 0000b: Wait states (Dummy
Clocks) not support 3CH
04:00 01000b
08H (1-1-2) Fast Read Number
of Mode Bits 000b: Mode Bits not support 07:05 000b
(1-1-2) Fast Read Opcode 3DH 15:08 3BH 3BH
(1-2-2) Fast Read Number
of Wait states
0 0000b: Wait states (Dummy
Clocks) not support 3EH
20:16 00010b
42H (1-2-2) Fast Read Number
of Mode Bits 000b: Mode Bits not support 23:21 010b
(1-2-2) Fast Read Opcode 3FH 31:24 BBH BBH
(2-2-2) Fast Read 0=not support 1=support
40H
00 0b
EEH Unused 03:01 111b
(4-4-4) Fast Read 0=not support 1=support 04 0b
Unused 07:05 111b
Unused 43H:41H 31:08 0xFFH 0xFFH
Unused 45H:44H 15:00 0xFFH 0xFFH
(2-2-2) Fast Read Number
of Wait states
0 0000b: Wait states (Dummy
Clocks) not support 46H
20:16 00000b
00H (2-2-2) Fast Read Number
of Mode Bits 000b: Mode Bits not support 23:21 000b
(2-2-2) Fast Read Opcode 47H 31:24 FFH FFH
Unused 49H:48H 15:00 0xFFH 0xFFH
(4-4-4) Fast Read Number of Wait
states
0 0000b: Wait states (Dummy
Clocks) not support 4AH
20:16 00000b
00H (4-4-4) Fast Read Number
of Mode Bits 000b: Mode Bits not support 23:21 000b
(4-4-4) Fast Read Opcode 4BH 31:24 FFH FFH
Sector Type 1 Size Sector/block size=2^N bytes
0x00b: this sector type don’t exist 4CH 07:00 0CH 0CH
Sector Type 1 erase Opcode 4DH 15:08 20H 20H
Sector Type 2 Size Sector/block size=2^N bytes
0x00b: this sector type don’t exist 4EH 23:16 0FH 0FH
Sector Type 2 erase Opcode 4FH 31:24 52H 52H
Sector Type 3 Size Sector/block size=2^N bytes
0x00b: this sector type don’t exist 50H 07:00 10H 10H
Sector Type 3 erase Opcode 51H 15:08 D8H D8H
Sector Type 4 Size Sector/block size=2^N bytes
0x00b: this sector type don’t exist 52H 23:16 00H 00H
Sector Type 4 erase Opcode 53H 31:24 FFH FFH
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Table5. Parameter Table (1): GigaDevice Flash Parameter Tables
Description Comment Add(H)
(Byte)
DW Add
(Bit) Data Data
Vcc Supply Maximum Voltage
2000H=2.000V
2700H=2.700V
3600H=3.600V
61H:60H 15:00 3600H 3600H
Vcc Supply Minimum Voltage
1650H=1.650V
2250H=2.250V
2350H=2.350V
2700H=2.700V
63H:62H 31:16 2700H 2700H
HW Reset# pin 0=not support 1=support
65H:64H
00 0b
F99EH
HW Hold# pin 0=not support 1=support 01 1b
Deep Power Down Mode 0=not support 1=support 02 1b
SW Reset 0=not support 1=support 03 1b
SW Reset Opcode Should be issue Reset Enable(66H)
before Reset cmd. 11:04
1001 1001b
(99H)
Program Suspend/Resume 0=not support 1=support 12 1b
Erase Suspend/Resume 0=not support 1=support 13 1b
Unused 14 1b
Wrap-Around Read mode 0=not support 1=support 15 1b
Wrap-Around Read mode Opcode 66H 23:16 77H 77H
Wrap-Around Read data length
08H:support 8B wrap-around read
16H:8B&16B
32H:8B&16B&32B
64H:8B&16B&32B&64B
67H 31:24 64H 64H
Individual block lock 0=not support 1=support
6BH:68H
00 0b
EBFCH
Individual block lock bit
(Volatile/Nonvolatile) 0=Volatile 1=Nonvolatile 01 0b
Individual block lock Opcode 09:02 FFH
Individual block lock Volatile
protect bit default protect status 0=protect 1=unprotect 10 0b
Secured OTP 0=not support 1=support 11 1b
Read Lock 0=not support 1=support 12 0b
Permanent Lock 0=not support 1=support 13 1b
Unused 15:14 11b
Unused 31:16 FFH FFH
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8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Figure 40. Power-on Timing Diagram
Vcc(max)
Vcc(min)
VWI
tVSL
Chip Selection is not allowed
Device is fullyaccessible
Time
Table6. Power-Up Timing and Write Inhibit Threshold
Symbol Parameter Min Max Unit
tVSL VCC (min) To CS# Low 5 ms
VWI Write Inhibit Voltage 1.5 2.5 V
8.2. INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH). The Status Register
bits are set to 0, except DRV0 bit (S21) is set to 1.
8.3. ABSOLUTE MAXIMUM RATINGS
Parameter Value Unit
Ambient Operating Temperature -40 to 85 ℃
Storage Temperature -65 to 150 ℃
Applied Input/Output Voltage -0.6 to VCC+0.4 V
Transient Input/Output Voltage (note: overshoot) -2.0 to VCC+2.0 V
VCC -0.6 to 4.0 V
Figure 41. Maximum Negative/positive Overshoot Diagram
Vss
20ns
Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform
20ns
20ns
Vss-2.0V
Vcc
20ns
20ns
20ns
Vcc + 2.0V
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8.4. CAPACITANCE MEASUREMENT CONDITIONS
Symbol Parameter Min Typ Max Unit Conditions
CIN Input Capacitance 6 pF VIN=0V
COUT Output Capacitance 8 pF VOUT=0V
CL Load Capacitance 30 pF
Input Rise And Fall time 5 ns
Input Pulse Voltage 0.1VCC to 0.8VCC V
Input Timing Reference Voltage 0.2VCC to 0.7VCC V
Output Timing Reference Voltage 0.5VCC V
Figure 42. Input Test Waveform and Measurement Level
0.8VCC
0.1VCC
0.7VCC
0.2VCC0.5VCCAC Measurement Level
Input timing reference level Output timing reference level
Note: Input pulse rise and fall time are <5ns
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8.5. DC CHARACTERISTICS (T= -40℃~85℃, VCC=2.7~3.6V)
Symbol Parameter Test Condition Min. Typ. Max. Unit.
ILI Input Leakage Current ±2 μA
ILO Output Leakage Current ±2 μA
ICC1 Standby Current CS#=VCC,
VIN=VCC or VSS
1 5 μA
ICC2 Deep Power-Down Current CS#=VCC,
VIN=VCC or VSS
1 5 μA
ICC3 Operating Current (Read)
CLK=0.1VCC / 0.9VCC
at 120MHz,
Q=Open(*1,*2,*4 I/O)
15 20 mA
CLK=0.1VCC / 0.9VCC
at 80MHz,
Q=Open(*1,*2,*4 I/O)
13 18 mA
ICC4 Operating Current (PP) CS#=VCC 20 mA
ICC5 Operating Current (WRSR) CS#=VCC 20 mA
ICC6 Operating Current (SE) CS#=VCC 20 mA
ICC7 Operating Current (BE) CS#=VCC 20 mA
ICC8 Operating Current (CE) CS#=VCC 20 mA
ICC9 High Performance Current 0.4 1.2 mA
VIL Input Low Voltage 0.2VCC V
VIH Input High Voltage 0.7VCC V
VOL Output Low Voltage IOL =100μA 0.2 V
VOH Output High Voltage IOH =-100μA VCC-0.2 V
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8.6. AC CHARACTERISTICS (T= -40℃~85℃, VCC=2.7~3.6V, CL=30pf)
Symbol Parameter Min. Typ. Max. Unit.
fC
Serial Clock Frequency For: Dual I/O (BBH),
Quad I/O (EBH), Quad Output (6BH) (Dual I/O & Quad I/O
Without High Performance Mode), on 3.0V-3.6V power
supply
DC. 104 MHz
fC1
Serial Clock Frequency For: Dual I/O (BBH),
Quad I/O (EBH), Quad Output (6BH) (Dual I/O & Quad I/O
Without High Performance Mode), on 2.7V-3.0V power
supply
DC. 80 MHz
fC2
Serial Clock Frequency For: Dual I/O(BBH),
Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O
With High Performance Mode), on 2.7V-3.6V power supply
DC. 120 MHz
fC3 Serial Clock Frequency For: Fast Read (0BH) (with/without
High Performance Mode), on 2.7V-3.6V power supply DC. 120 MHz
fR
Serial Clock Frequency For: Read(03H), Read Status
Register (05H, 15H, 35H) Read Device ID (ABH, 90H,
92H, 94H, 9FH)
DC. 80 MHz
tCLH Serial Clock High Time 3.5 ns
tCLL Serial Clock Low Time 3.5 ns
tCLCH Serial Clock Rise Time (Slew Rate) 0.1 V/ns
tCHCL Serial Clock Fall Time (Slew Rate) 0.1 V/ns
tSLCH CS# Active Setup Time 5 ns
tCHSH CS# Active Hold Time 5 ns
tSHCH CS# Not Active Setup Time 5 ns
tCHSL CS# Not Active Hold Time 5 ns
tSHSL CS# High Time (Read/Write) 20 ns
tSHQZ Output Disable Time 6 ns
tCLQX Output Hold Time 1.2 ns
tDVCH Data In Setup Time 2 ns
tCHDX Data In Hold Time 2 ns
tHLCH HOLD# Low Setup Time (relative to Clock) 5 ns
tHHCH HOLD# High Setup Time (relative to Clock) 5 ns
tCHHL HOLD# High Hold Time (relative to Clock) 5 ns
tCHHH HOLD# Low Hold Time (relative to Clock) 5 ns
tHLQZ HOLD# Low To High-Z Output 6 ns
tHHQX HOLD# High To Low-Z Output 6 ns
tCLQV Clock Low To Output Valid 7 ns
tWHSL Write Protect Setup Time Before CS# Low 20 ns
tSHWL Write Protect Hold Time After CS# High 100 ns
tDP CS# High To Deep Power-Down Mode 20 μs
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tRES1 CS# High To Standby Mode Without Electronic Signature
Read 20 μs
tRES2 CS# High To Standby Mode With Electronic Signature
Read 20 μs
tSUS CS# High To Next Command After Suspend 20 μs
tRST CS# High To Next Command After Reset (Except From
Erase)
30 μs
tRST_E CS# High To Next Command After Reset (From Erase) 12 ms
tW Write Status Register Cycle Time 5 30 ms
tBP1 Byte Program Time (First Byte) 30 50 μs
tBP2 Additional Byte Program Time (After First Byte) 2.5 12 μs
tPP Page Programming Time 0.6 2.4 ms
tSE Sector Erase Time (4K Bytes) 50 200/300(1) ms
tBE1 Block Erase Time (32K Bytes) 0.15 0.8/1.6(2) s
tBE2 Block Erase Time (64K Bytes) 0.20 1.2/2.0(3) s
tCE Chip Erase Time (GD25Q64C) 25 60 s
Note: 1. Max Value 4KB tSE with≤50K cycles is 200ms and >50K & ≤100k cycles is 300ms. 2. Max Value 32KB tBE with≤50K cycles is 0.8s and >50K & ≤100k cycles is 1.6s. 3. Max Value 64KB tBE with≤50K cycles is 1.2s and >50K & ≤100k cycles is 2.0s.
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Figure 43. Serial Input Timing
Figure 44. Output Timing
Figure 45. Hold Timing
CS#
SCLK
SO
HOLD#
tCHHL
tHLQZ
tHLCH
tCHHH
tHHCH
tHHQX
SI do not care during HOLD operation.
SCLK
CS#
SI MSB
SO High-Z
LSB
tCHSL tSLCH
tDVCHtCHDX
tSHCHtCHSH
tCHCLtCLCH
tSHSL
CS#
SCLK
SO
SILeast significant address bit (LIB) in
tCLQVtCLQX tCLQX
tCLQV
tCLH
tCLL
tSHQZ
LSB
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9. ORDERING INFORMATION
* This datasheet applies to temperature range I: Industrial(-40℃~+85℃) and F: Industrial+(-40℃~+85℃). Please contact
GigaDevice sales for extended temperature ranges and automotive grade products.
PackingT or no mark: TubeY: TrayR: Tape and Reel
Green CodeG: Pb Free + Halogen Free Green PackageS: Pb Free + Halogen Free Green Package + SRP1Function
Temperature Range*I: Industrial (-40℃ to +85℃)J: Industrial (-40℃ to +105℃)E: Industrial (-40℃ to +125℃)F: Industrial+ (-40℃ to +85℃)3: Automotive (-40℃ to +85℃)2: Automotive (-40℃ to +105℃)A: Automotive (-40℃ to +125℃)
Package TypeS: SOP8 208milP: DIP8 300milF: SOP16 300milQ: USON8 (4*4mm, 0.45mm thickness)W: WSON8 (6*5mm)Y: WSON8 (8*6mm)Z: TFBGA-24ball (6*4 Ball Array)
GenerationC: C Version
Density64: 64Mbit
SeriesQ: 3V, 4KB Uniform Sector
Product Family25: SPI Interface Flash
X X XGD XX XX XX X X
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9.1. Valid Part Numbers Please contact GigaDevice regional sales for the latest product selection and available form factors. Please contact GigaDevice regional sales for details if hardware RESET# PIN is required.
Temperature Range I: Industrial (-40℃ to +85℃)
Product Number Density Package Type
GD25Q64CSIG 64Mbit SOP8 208mil
GD25Q64CSIS GD25Q64CPIG
64Mbit DIP8 300mil GD25Q64CPIS GD25Q64CFIG
64Mbit SOP16 300mil GD25Q64CFIS GD25Q64CQIG
64Mbit USON8 (4*4mm, 0.45mm thickness) GD25Q64CQIS GD25Q64CWIG
64Mbit WSON8 (6*5mm) GD25Q64CWIS GD25Q64CYIG
64Mbit WSON8 (8*6mm) GD25Q64CYIS GD25Q64CZIG
64Mbit TFBGA-24ball (6*4 Ball Array) GD25Q64CZIS
Temperature Range F: Industrial+ (-40℃ to +85℃)
Product Number Density Package Type
GD25Q64CSFG 64Mbit SOP8 208mil
GD25Q64CSFS GD25Q64CPFG
64Mbit DIP8 300mil GD25Q64CPFS GD25Q64CFFG
64Mbit SOP16 300mil GD25Q64CFFS GD25Q64CQFG
64Mbit USON8 (4*4mm, 0.45mm thickness) GD25Q64CQFS GD25Q64CWFG
64Mbit WSON8 (6*5mm) GD25Q64CWFS GD25Q64CYFG
64Mbit WSON8 (8*6mm) GD25Q64CYFS GD25Q64CZFG
64Mbit TFBGA-24ball (6*4 Ball Array) GD25Q64CZFS
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10. PACKAGE INFORMATION
10.1. Package SOP8 208MIL
D
E E1
A A2
A1b e
“A”
L1L
θ
b
cBase Metal
Detail “A”
Dimensions
Symbol A A1 A2 b c D E E1 e L L1 θ
Unit
mm
Min - 0.05 1.70 0.31 0.15 5.13 7.70 5.18
1.27
0.50
1.31
0°
Nom - 0.15 1.80 0.41 0.20 5.23 7.90 5.28 - -
Max 2.16 0.25 1.90 0.51 0.25 5.33 8.10 5.38 0.85 8°
Note: 1. Both the package length and width do not include the mold flash. 2. Seating plane: Max. 0.1mm.
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10.2. Package DIP8 300MIL
E
E1
AA2
A1
b1 e
θ
D
L
b
eA
14
85
c
Dimensions
Symbol A A1 A2 b b1 C D E E1 e L eA θ
Unit
mm
Min - 0.38 3.00 1.14 0.36 0.20 9.02 7.62 6.10
2.54
2.92 8.45 0°
Nom - - 3.30 1.52 0.46 0.25 9.27 7.87 6.35 3.30 8.90 -
Max 3.88 - 3.50 1.78 0.56 0.35 9.59 8.26 6.60 3.81 9.35 11°
Note: Both the package length and width do not include the mold flash.
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10.3. Package SOP16 300MIL
D
E E1
A A2
A1b e
“A”
L1L
θ
b
c Base Metal
Detail “A”
h
h
Dimensions
Symbol A A1 A2 b c D E E1 e L L1 h θ
Unit
mm
Min - 0.10 2.05 0.31 0.10 10.20 10.10 7.40
1.27
0.40
1.40
0.25 0
Nom - 0.20 - 0.41 0.25 10.30 10.30 7.50 - - -
Max 2.65 0.30 2.55 0.51 0.33 10.40 10.50 7.60 1.27 0.75 8
Note: 1. Both the package length and width do not include the mold flash. 2. Seating plane: Max. 0.1mm.
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10.4. Package USON8 (4*4mm, 0.45mm thickness)
D
E
Top View
D1
E1
L
b
e
Bottom View
c
A1
ASide View
Dimensions
Symbol A A1 c b D D1 E E1 e L
Unit
mm
Min 0.40 0.00 0.10 0.25 3.90 2.20 3.90 2.90
0.80
0.35
Nom 0.45 0.02 0.15 0.30 4.00 2.30 4.00 3.00 0.40
Max 0.50 0.05 0.20 0.35 4.10 2.40 4.10 3.10 0.45
Note: 1. Both the package length and width do not include the mold flash. 2. The exposed metal pad area on the bottom of the package is floating. 3. Coplanarity ≤0.08mm. Package edge tolerance≤0.10mm. 4. The lead shape may be of little difference according to different package factories. These lead shapes are compatible with each other
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10.5. Package WSON8 (6*5mm)
D
E
Top View
D2
E2
L
b
e
Bottom View
c
A1
ASide View
Dimensions
Symbol A A1 c b D D2 E E2 e L
Unit
mm
Min 0.70 0.00 0.180 0.35 5.90 3.30 4.90 3.90
1.27
0.50
Nom 0.75 0.02 0.203 0.40 6.00 3.40 5.00 4.00 0.60
Max 0.80 0.05 0.250 0.50 6.10 3.50 5.10 4.10 0.75
Note: 1. Both the package length and width do not include the mold flash. 2. The exposed metal pad area on the bottom of the package is floating. 3. Coplanarity ≤0.08mm. Package edge tolerance≤0.10mm. 4. The lead shape may be of little difference according to different package lead frames. These lead shapes are compatible with each other.
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10.6. Package WSON8 (8*6mm)
D
E
Top View
D2
E2
L
b
e
Bottom View
c
A1
A
Side View
Dimensions
Symbol A A1 c b D D2 E E2 e L
Unit
mm
Min 0.70 0.00 0.180 0.35 7.90 3.30 5.90 4.20
1.27
0.45
Nom 0.75 0.02 0.203 0.40 8.00 3.40 6.00 4.30 0.50
Max 0.80 0.05 0.250 0.45 8.10 3.50 6.10 4.40 0.55
Note: 1. Both the package length and width do not include the mold flash. 2. The exposed metal pad area on the bottom of the package is floating. 3. Coplanarity ≤0.08mm. Package edge tolerance≤0.10mm. 4. The lead shape may be of little difference according to different package lead frames. These lead shapes are compatible with each other.
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10.7. Package TFBGA-24BALL (6*4 ball array)
E
D
E1
D1
e
e
4 3 2 1
A
B
C
D
E
F
b
A A2
A1
4321
A
B
C
D
E
F
Dimensions
Symbol A A1 A2 b E E1 D D1 e
Unit
mm
Min - 0.25 0.75 0.35 5.90
3.00
7.90
5.00 1.00 Nom - 0.30 0.80 0.40 6.00 8.00
Max 1.20 0.35 0.85 0.45 6.10 8.10
Note: Both the package length and width do not include the mold flash.
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11. REVISION HISTORY
Version No Description Page Date
1.0 Initial Release --- 2014-06-12
1.1 Modify ordering information
Add note on STATUS REGISTER
--- 2015-02-10
1.2 Modify ELECTRICAL CHARACTERISTICS --- 2015-3-9
1.3
Modify DC CHARACTERISTICS:Icc9
Modify Package WSON 8 (6*5mm)
Modify Package TFBGA-24BALL (6*4 ball array)
---
2015-6-12
1.4 Modify Package SOP8 208MIL --- 2015-7-20
1.5 Modify Package TFBGA-24BALL (6*4 ball array) --- 2015-7-23
1.6
Modify AC CHARACTERISTICS: tCHCL Min.0.2 V/ns Change to
0.1 V/ns
tCLCH Min.0.2 V/ns Change to 0.1 V/ns ; Modify fR ;Add fC3;
Modify POWER-ON TIMING: tPUW Min 1ms Change to 5ms
Modify Figure 40. Power-on Timing Sequence Diagram
---
2015-11-9
1.7 Modify POWER-ON TIMING: tVSL Min 10us Change to 5ms --- 2015-12-16
1.8 Modify AC CHARACTERISTICS: add tRST_R & tRST_P & tRST_E --- 2015-12-18
1.9 Modify ORDERING INFORMATION --- 2016-1-4
2.0 Add Package USON8 (4*4mm) --- 2016-1-26
2.1
Modify Program Security Registers
Modify DC CHARACTERISTICS
Modify Figure 40. Power-on Timing Sequence Diagram
Modify Power-on Timing: Delete tPUW
Modify Package WSON 8 (5*6mm)
---
2016-2-17
2.2 Modify General Description --- 2016-5-18
2.3 Delete Data Retention and endurance --- 2016-6-20
2.4
Modify Write Enable for Volatile Status Register(50H)
Modify Chip Erase(CE)(60/C7H)
Modify Program/Erase Suspend(PES)(75H)
Modify Package WSON8 (6*5mm)
Modify Features: Add Allows XIP(execute in place)operation
Modify TFBGA-24Ball(6*4 ball array)
Add Valid Part Numbers
---
2016-7-21
2.5 Modify ORDERING INFORMATION P53 2017-2-14
2.6 Modify ORDERING INFORMATION P53 2017-3-8
2.7 Add Package WSON (8*6mm) P58 2017-4-28
2.8
Modify Icc4, Icc5, Icc6, Icc7 and Icc8 max. value from 15mA to
20mA
Modify Icc9 max. value from 800uA to 1.2mA
P49
P49
2017-8-1
2.9 Delete tRST_P and tRST_R
Add tRST, of which the max value is 30us
P52
P52 2018-2-27
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Update the description of all packages P56-62
http://www.elm-tech.com Rev.2.9
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