datasheet - irfz46n

8/11/2019 datasheet - irfz46n

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IRFZ46NHEXFETPower MOSFET

01/24/01

Absolute Maximum Ratings

Parameter Typ. Max. Units

RJC Junction-to-Case 1.4

RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W

RJA Junction-to-Ambient 62

Thermal Resistance

www.irf.com 1

VDSS= 55V

RDS(on)= 16.5m

ID= 53AS

D

G

TO-220AB

Advanced HEXFETPower MOSFETs from International

Rectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contributeto its wide acceptance throughout the industry.

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated

Description

PD-91277

Parameter Max. UnitsID@ TC= 25C Continuous Drain Current, VGS@ 10V 53

ID@ TC= 100C Continuous Drain Current, VGS@ 10V 37 A

IDM Pulsed Drain Current 180

PD @TC= 25C Power Dissipation 107 W

Linear Derating Factor 0.71 W/ C

VGS Gate-to-Source Voltage 20 V

IAR Avalanche Current 28 A

EAR Repetitive Avalanche Energy 11 mJ

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

TJ Operating Junction and -55 to + 175

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C

Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)


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S

D

G

Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current MOSFET symbol

(Body Diode)

showing the

ISM Pulsed Source Current integral reverse

(Body Diode)

p-n junction diode.

VSD Diode Forward Voltage 1.3 V TJ= 25C, IS= 28A, VGS= 0V

trr Reverse Recovery Time 67 101 ns TJ= 25C, IF= 28A

Qrr Reverse Recovery Charge 208 312 nC di/dt = 100A/s

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

53

180

A

Starting TJ = 25C, L = 389H

RG = 25, IAS = 28A. (See Figure 12)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Notes:

ISD 28A, di/dt 220A/s, VDD V(BR)DSS,

TJ 175CPulse width 400s; duty cycle 2%.

This is a typical value at device destruction and represents

operation outside rated limits.

This is a calculated value limited to TJ= 175C.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS= 0V, ID= 250A

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.057 V/C Reference to 25C, ID= 1mA

RDS(on) Static Drain-to-Source On-Resistance 16.5 m VGS= 10V, ID= 28A

VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS= VGS, ID= 250A

gfs Forward Transconductance 19 S VDS= 25V, ID= 28A

25A

VDS= 55V, VGS= 0V

250 VDS= 44V, VGS= 0V, TJ= 150C

Gate-to-Source Forward Leakage 100 VGS= 20V

Gate-to-Source Reverse Leakage -100nA

VGS= -20V

Qg Total Gate Charge 72 ID= 28A

Qgs Gate-to-Source Charge 11 nC VDS= 44V

Qgd Gate-to-Drain ("Miller") Charge 26 VGS= 10V, See Fig. 6 and 13td(on) Turn-On Delay Time 14 VDD= 28V

tr Rise Time 76 ID= 28A

td(off) Turn-Off Delay Time 52 RG= 12

tf Fall Time 57 VGS= 10V, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

Ciss Input Capacitance 1696 VGS= 0V

Coss Output Capacitance 407 VDS= 25V

Crss Reverse Transfer Capacitance 110 pF = 1.0MHz, See Fig. 5

EAS Single Pulse Avalanche Energy 583 152 mJ IAS = 28A, L = 389H

nH

Electrical Characteristics @ TJ= 25C (unless otherwise specified)

LD Internal Drain Inductance

LS Internal Source Inductance S

D

G

IGSS

ns

4.5

7.5

IDSS Drain-to-Source Leakage Current


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IRFZ46N

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Fig 4. Normalized On-ResistanceVs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

1000

0.1 1 10 100

20s PULSE WIDTHT = 25 CJ

TOP

BOTTOM

VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V

V , Drain-to-Source Voltage (V)

I

,Drain-to-SourceCurrent(A)

DS

D

4.5V

1

10

100

1000

0.1 1 10 100

20s PULSE WIDTHT = 175 CJ

TOP

BOTTOM

VGS15V10V8.0V7.0V6.0V5.5V5.0V4.5V

V , Drain-to-Source Voltage (V)

I


DS

D

4.5V

1

10

100

1000

4 5 6 7 8 9 10 11

V = 25V20s PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I


GS

D

T = 25 CJ

T = 175 CJ

-60 -40 -20 0 20 40 60 80 100 120 140 160 1800.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

R

,Drain-to-SourceOnResistance

(Normalized)

J

DS(on)

V =

I =

GS

D

10V

53A


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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.Case Temperature

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D =t / t

2. Peak T =P x Z + T1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

ThermalResponse(Z

)

1

thJC

0.010.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE(THERMAL RESPONSE)

25 50 75 100 125 150 1750

10

20

30

40

50

60

T , Case Temperature ( C)

I

,DrainCurrent(A)

C

D

VDS

90%

10%

VGS

td(on) tr td(off) tf

VDS

Pulse Width 1 sDuty Factor 0.1 %

RD

VGS

RG

D.U.T.

VGS

+

-VDD

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms


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IRFZ46N

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QG

QGS QGD

VG

Charge

D.U.T. VDS

IDIG

3mA

VGS

.3F

50K

.2F12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-VGS

Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

R G

IA S

0.01tp

D.U.T

LV D S

+

-VD D

DRI V E R

A

1 5V

20 V

25 50 75 100 125 150 1750

50

100

150

200

250

300

350

Starting T , Junction Temperature( C)

E

,SinglePulseAvalancheEnergy(mJ)

J

AS

IDTOP

BOTTOM

11A20A28A


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IRFZ46N

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Peak Diode Recovery dv/dt Test Circuit

P.W. Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward Drop

Re-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISDWaveform

D.U.T. VDSWaveform

Inductor Curent

D =P.W.

Period

+

-

+

+

+-

-

-

RGVDD

dv/dt controlled by RG ISDcontrolled by Duty Factor "D" D.U.T. - Device Under Test

D.U.T*Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

* Reverse Polarity of D.U.T for P-Channel

VGS

[ ]

[ ]

***VGS= 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 14. For N-channel HEXFETpower MOSFETs


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IRFZ46N

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LEAD ASSI GNM ENT S

1 - GAT E

2 - DRAIN

3 - SOURCE

4 - DRAIN

- B -

1.32 (.052)1.22 (.048)

3X0.55 (.022)0.46 (.018)

2.92 (.115)2.64 (.104)

4.69 (.185)4.20 (.165)

3X0.93 (.037)0.69 (.027)

4.06 (.160)3.55 (.140)

1.15 (.045) MIN

6.47 (.255)6.10 (.240)

3.78 (.149)3.54 (.139)

- A -

10.54 (.415)10.29 (.405)2.87 (.113)

2.62 (.103)

15.24 (.600)14.84 (.584)

14.09 (.555)13.47 (.530)

3X1.40 (.055)1.15 (.045)

2.54 (.100)

2X

0.36 (.014) M B A M

4

1 2 3

N O T E S :

1 D I M ENSI ONING & T OLERANCI NG PER ANSI Y14 . 5M , 1982 . 3 OUT LI NE CONF ORM S TO JEDEC OUT LI NE T O-220AB.

2 CONT ROLLI NG DI M ENSION : I NCH 4 HEAT SI NK & LEAD M EASUREM EN T S DO NOT I NCLUDE BURRS.

TO-220AB Part Marking Information

TO-220AB Package OutlineDimensions are shown in millimeters (inches)

PART NUMBERINTERNATIONAL

RECTIFIER LOGO

EXAMPLE : THIS IS AN IRF1010WITH ASSEMBLYLOT CODE 9B1M

A S S E M B L Y

LOT CODE

DATE CODE

( Y Y W W )

YY = YEAR

W W = W E E K

9246IRF1010

9B 1M

A

IR WORLD HEADQUARTERS:233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903Visit us at www.irf.com for sales contact information.12/00

Data and specifications subject to change without notice.This product has been designed and qualified for the automotive [Q101] market.

Qualification Standards can be found on IRs Web site.

datasheet - irfz46n

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