datasheet (nst3906

8/12/2019 datasheet (nst3906

1/4

Semiconductor Components Industries, LLC, 2008

April, 2008

Rev. 0

1 Publication Order Number:

NST3906DP6/D

NST3906DP6T5G

Dual General PurposeTransistor

The NST3906DP6T5G device is a spinoff of our popular

SOT23/SOT323/SOT563threeleaded device. It is designed for

general purpose amplifier applications and is housed in the SOT963

sixleaded surface mount package. By putting two discrete devices in

one package, this device is ideal for lowpower surface mount

applications where board space is at a premium.Features

hFE, 100300

Low VCE(sat), 0.4 V

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

This is a PbFree Device

MAXIMUM RATINGS

Rating Symbol Value Unit

CollectorEmitter Voltage VCEO 40 V

CollectorBase Voltage VCBO 40 V

EmitterBase Voltage VEBO 5.0 V

Collector Current Continuous IC 200 mA

Electrostatic Discharge HBMMM

ESDClass

2B

THERMAL CHARACTERISTICS

Characteristic (Single Heated) Symbol Max Unit

Total Device Dissipation TA= 25CDerate above 25C (Note 1)

PD 2401.9

mWmW/C

Thermal Resistance, Junction-to-Ambient(Note 1)

RJA 520 C/W


PD 2802.2

mWmW/C


RJA 446 C/W

Characteristic (Dual Heated) (Note 3) Symbol Max Unit


PD 3502.8

mWmW/C


RJA 357 C/W

Total Device Dissipation TA= 25C

Derate above 25C (Note 2)

PD 420

3.4

mW

mW/C


RJA 297 C/W

Junction and Storage Temperature Range TJ, Tstg 55 to+150

C

Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above theRecommended Operating Conditions may affect device reliability.1. FR4 @ 100 mm2, 1 oz. copper traces, still air.2. FR4 @ 500 mm2, 1 oz. copper traces, still air.3. Dual heated values assume total power is sum of two equally powered channels.

Q1

(1)(2)(3)

(4) (5) (6)

Q2

NST3906DP6T5G

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAM

Device Package Shipping

NST3906DP6T5G SOT963

(PbFree)

8000/Tape & Reel

For information on tape and reel specifications,including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging SpecificationsBrochure, BRD8011/D.

SOT963CASE 527AD

PLASTIC

12

31

54

6

F M

1

F = Device Code

M = Date Code

= PbFree Package

(Note: Microdot may be in either location)


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2

ELECTRICAL CHARACTERISTICS (TA= 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

CollectorEmitter Breakdown Voltage (Note 4) (IC= 1.0 mAdc, IB= 0) V(BR)CEO 40 V

CollectorBase Breakdown Voltage (IC= 10 Adc, IE= 0) V(BR)CBO 40 V

EmitterBase Breakdown Voltage (IE= 10 Adc, IC= 0) V(BR)EBO 5.0 V

Collector Cutoff Current (VCE= 30 Vdc, VEB= 3.0 Vdc) ICEX

50 nA

ON CHARACTERISTICS (Note 4)

DC Current Gain

(IC= 0.1 mA, VCE= 1.0 V)

(IC= 1.0 mA, VCE= 1.0 V)

(IC= 10 mA, VCE= 1.0 V)

(IC= 50 mA, VCE= 1.0 V)

(IC= 100 mA, VCE= 1.0 V)

hFE60

80

100

60

30

300

CollectorEmitter Saturation Voltage

(IC= 10 mA, IB= 1.0 mA)

(IC= 50 mA, IB= 5.0 mA)

VCE(sat)

0.25

0.4

V

BaseEmitter Saturation Voltage

(IC= 10 mA, IB= 1.0 mA)

(IC=

50 mA, IB=

5.0 mA)

VBE(sat)0.65

0.85

0.95

V

SMALLSIGNAL CHARACTERISTICS

CurrentGain Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f = 100 MHz) f T 250 MHz

Output Capacitance (VCB= 5.0 V, IE= 0 mA, f = 1.0 MHz) Cobo 4.5 pF

Input Capacitance (VEB= 0.5 V, IE= 0 mA, f = 1.0 MHz) Cibo 10.0 pF

Noise Figure (VCE= 5.0 V, IC= 100 A, RS= 1.0 k , f = 1.0 kHz) NF 4.0 dB

SWITCHING CHARACTERISTICS

Delay Time (VCC= 3.0 V, VBE= 0.5 V) td 35ns

Rise Time (IC= 10 mA, IB1= 1.0 mA) tr 35

Storage Time (VCC= 3.0 V, IC= 10 mA) ts 250

nsFall Time (IB1= IB2= 1.0 mA) tf 50

4. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.

50

0

0.0001 10

IC, COLLECTOR CURRENT (A)

Figure 1. Collector Emitter Saturation Voltage vs.

Collector Current

Figure 2. DC Current Gain vs. Collector Current

0.40

0.0001 0.01 1

IC, COLLECTOR CURRENT (A)

0.05

0.001

0.15

250

300

350

VCE(sa

t),

COLLECTOR

EMITTER

SATURATION

VOLTAGE(V)

0.25

0.35IC/IB= 10

VCE(sat)= 150C

0.10.010.001

25C

55C

200

hFE,

DC

CURRENTGAIN

(V)

150

100

0.1

150C (5.0 V)

150C (1.0 V)

25C (5.0 V)

25C (1.0 V)

55C (5.0 V)

55C (1.0 V)0.10

0.20

0.30


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3

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current

Figure 4. Base Emitter TurnOn Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.0010.00010.3

0.4

0.5

0.6

0.8

0.9

1.0

1.1

10.10.010.0010.00010.3

0.4

0.5

0.6

0.7

0.9

1.0

1.1

Figure 5. Saturation Region Figure 6. Input Capacitance

Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V)

0.010.0010.00010

0.1

0.2

0.4

0.5

0.7

0.9

1.0

4.54.02.51.5 2.01.00.503.0

4.0

6.0

7.0

9.0

Figure 7. Output Capacitance

Vcb, COLLECTOR BASE VOLTAGE (V)

30252015105.001.0

1.5

2.0

2.5

6.0

VBE(sa

t),

BASE

EMITTER

SATURATION

VOLTAGE(V)

VBE(on

),BASE

EMITTER

TURN

ON

VOLTAGE(V)

VCE(sa

t),

COLLECTOR

EM

ITTER

SATURATION

VOLTAG

E(V)

Cibo,

INPUTCAPACITANC

E(pF)

Co

bo,

OUTPUTCAPACITANCE(pF)

0.7

IC/IB= 10

55C

25C

150C

0.8

VCE= 2.0 V

25C

0.3

0.6

0.8

IC= 10 mA

80 mA60 mA

40 mA

20 mA

3.0 3.5 5.0

5.0

Cib

Cob

55C

150C

8.0

3.0

3.5

4.0

4.5

5.0

5.5

100 mA


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NST3906DP6T5G

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4

PACKAGE DIMENSIONS

SOT963CASE 527AD01

ISSUE B

*For additional information on our Pb

Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM MIN NOM MAX

MILLIMETERS

A 0.34 0.37 0.40b 0.10 0.15 0.20C 0.07 0.12 0.17D 0.95 1.00 1.05E 0.75 0.80 0.85

e 0.35 BSCL 0.05 0.10 0.15

0.95 1.00 1.05HE

eb

E

D

C

AL

C0.08

HE

6X

A

1 2 3

456

0.004 0.006 0.0080.003 0.005 0.0070.037 0.039 0.041

0.03 0.032 0.034

0.014 BSC0.002 0.004 0.0060.037 0.039 0.041

MIN NOM MAX

INCHES

NOTES:1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESSIS THE MINIMUM THICKNESS OF BASE MATERIAL.

0.35

0.014

0.20

0.08

mminches

SCALE 20:1

0.90

0.0354

0.35

0.014

0.20

0.08

A

B

B

C

ON Semiconductorand are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Alloperating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rightsnor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. ShouldBuyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

NST3906DP6/D

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 8002829855 Toll FreeUSA/Canada

Europe, Middle East and Africa Technical Support:Phone: 421 33 790 2910

Japan Customer Focus CenterPhone: 81357733850

LITERATURE FULFILLMENT:Literature Distribution Center for ON SemiconductorP.O. Box 5163, Denver, Colorado 80217 USAPhone: 3036752175 or 8003443860 Toll Free USA/CanadaFax: 3036752176 or 8003443867Toll Free USA/CanadaEmail: [email protected]

ON Semiconductor Website: www.onsemi.com

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For additional information, please contact your localSales Representative

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