datasheet - scth100n65g2-7ag - automotive-grade silicon ... · ptot total power dissipation at tc =...
TRANSCRIPT
TAB
7
1
H2PAK-7
Drain (TAB)
Gate (1)
Driversource (2)
Powersource (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
FeaturesOrder code VDS RDS(on) typ. ID
SCTH100N65G2-7AG 650 V 20 mΩ 95 A
• AEC-Q101 qualified • Very fast and robust intrinsic body diode• Low capacitance
Applications• Traction inverters• DC-DC converters• OBC
DescriptionThis silicon carbide Power MOSFET device has been developed using ST’sadvanced and innovative 2nd generation SiC MOSFET technology. The devicefeatures remarkably low on-resistance per unit area and very good switchingperformance.
Product status link
SCTH100N65G2-7AG
Product summary
Order code SCTH100N65G2-7AG
Marking 100N65AG
Package H²PAK-7
Packing Tape and reel
Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
SCTH100N65G2-7AG
Datasheet
DS12773 - Rev 1 - November 2018For further information contact your local STMicroelectronics sales office.
www.st.com
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VGSGate-source voltage -10 to 22
VGate-source voltage (recommended operational values) -5 to 18
VDS Drain-source voltage 650 V
IDDrain current (continuous) at TC = 25 °C 95
ADrain current (continuous) at TC = 100 °C 65
ID(1) Drain current (pulsed) 260 A
PTOT Total power dissipation at TC = 25 °C 360 W
Tstg Storage temperature range-55 to 175
°C
TJ Operating junction temperature range °C
1. Pulse width is limited by safe operating area.
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 0.42 °C/W
Rthj-amb Thermal resistance junction-ambient 50 °C/W
SCTH100N65G2-7AGElectrical ratings
DS12773 - Rev 1 page 2/15
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 650 V
IDSS Zero gate voltage drain current
VGS = 0 V, VDS = 650 V 1 10
µAVGS = 0 V, VDS = 650 V,
TJ = 175 °C25
IGSS Gate-body leakage currentVDS = 0 V, VGS = 22 V,
TJ = 175 °C20 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 5 mA 1.9 3.1 5 V
RDS(on) Static drain-source on-resistance
VGS = 18 V, ID = 50 A 20 26
mΩVGS = 18 V, ID = 50 A,
TJ = 175 °C32
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitanceVDS = 520 V, f = 1 MHz,
VGS = 0 V
- 3315 - pF
Coss Output capacitance - 267 - pF
Crss Reverse transfer capacitance - 46 - pF
Qg Total gate charge
VDS = 520 V, VGS = -5 to 18 V, ID= 50 A
- 162 - nC
Qgs Gate-source charge - 45 - nC
Qgd Gate-drain charge - 49 - nC
Rg Gate input resistance f=1 MHz, ID = 0 A - 1 - Ω
Table 5. Switching energy
Symbol Parameter Test conditions Min. Typ. Max. Unit
Eon Turn-on switching energy VDD = 520 V, ID = 50 A
RG= 10 Ω, VGS = -5 to 18 V
- 486 - µJ
Eoff Turn-off switching energy - 506 - µJ
SCTH100N65G2-7AGElectrical characteristics
DS12773 - Rev 1 page 3/15
Table 6. Reverse SiC diode characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
VSD Diode forward voltage IF = 30 A, VGS = 0 V - 3.5 - V
trr Reverse recovery timeISD = 50 A, di/dt = 2140 A/µs
VDD = 520 V, RG= 10 Ω, VGS= -5 V
- 26 ns
Qrr Reverse recovery charge - 370 - nC
IRRM Reverse recovery current - 24 - A
SCTH100N65G2-7AGElectrical characteristics
DS12773 - Rev 1 page 4/15
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
GADG191120181526SOA
10 2
10 1
10 0
10 -1
10 0 10 1 10 2
ID (A)
VDS (V)
tp =10 µs
tp =100 µs
tp =1 ms
tp =10 ms
Operation in this areais limited by RDS(on)
Single pulse, TC = 25 °C, TJ = 175 °C
Figure 2. Thermal impedance
GADG031020181127ZTH
10 -1
10 -2
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
K
tp (s)
δ = 0.5
δ = 0.2δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
Single pulse
Figure 3. Output characteristics (TJ = 25 °C)
GIPG190920181009OCH_25
160
120
80
40
00 2 4 6 8
ID (A)
VDS (V)
VGS =8 V
VGS =6 V
VGS =10 V
VGS =12 V
VGS =14 V
VGS = 18 V, 20 V VGS =16 V
Figure 4. Output characteristics (TJ = 175 °C)
GADG261120180955OCH
160
120
80
40
00 2 4 6 8
ID (A)
VDS (V)
VGS = 12 V
VGS = 10 V
VGS = 8 V
VGS = 6 V
VGS = 14, 16, 18, 20 V
Figure 5. Transfer characteristics
GADG261120180955TCH
160
120
80
40
00 4 8 12 16
ID (A)
VGS (V)
VDS = 4 V TJ = 25 °C
TJ = 175 °C
Figure 6. Power dissipation
GADG261120180956PDT
360
300
240
180
120
60
0-75 -25 25 75 125 175
PTOT (W)
TC (°C)
TJ = 175 °C
SCTH100N65G2-7AGElectrical characteristics (curves)
DS12773 - Rev 1 page 5/15
Figure 7. Gate charge vs gate-source voltage
GIPG021020181232QVG
16
12
8
4
0
-4
-80 30 60 90 120 150
VGS (V)
Qg (nC)
VDD = 520 VID = 50 A
Figure 8. Capacitance variations
GIPG190920181024CVR
10 3
10 2
10 1
10 -1 10 0 10 1 10 2
C (pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
Figure 9. Switching energy vs drain current
IGBT190920181025SLC
2000
1000
00 40 80
E(μJ)
ID (A)
Etot
Eoff
Eon
Figure 10. Normalized V(BR)DSS vs temperature
GADG260920181515BDV
1.04
1.02
1.00
0.98
0.96
0.94-75 -25 25 75 125 175
V(BR)DSS (norm.)
Tj (°C)
Figure 11. Normalized gate threshold voltage
GADG260920181207VTH
1.4
1.2
1.0
0.8
0.6
0.4-75 -25 25 75 125 175
VGS(th) (norm.)
Tj (°C)
Figure 12. Switching energy vs junction temperature
SIC031020181415SLT
1000
800
600
400
200
025 75 125
E (µJ)
TJ (°C)
Etot
Eoff
Eon
VDD = 520 V, VGS = -5 to 18 V, RG = 10 Ω, ID = 50 A
SCTH100N65G2-7AGElectrical characteristics (curves)
DS12773 - Rev 1 page 6/15
Figure 13. Switching energy vs gate resistance
SIC041020180951SLG
1600
1200
800
400
04 8 12 16 20
E (μJ)
RG (Ω)
Etot
Eoff
Eon
VDD = 520 V, VGS = -5 to 18 V,
ID = 50 A
Figure 14. Normalized on-resistance vs temperature
GADG261120180956RON
1.8
1.6
1.4
1.2
1.0
0.8
0.6-75 -25 25 75 125 175
RDS(on) (norm.)
Tj (°C)
VGS = 18 V
Figure 15. Body diode characteristics (TJ = 25 °C)
SIC260920181209DVF
-80
-120
-160
-200-8 -6 -4 -2
ID (A)
VDS (V)
VGS = 10 V
VGS = 0 V
-40VGS = -10 V
Figure 16. Body diode characteristics (TJ = 175 °C)
SIC260920181210DVF200
-40
-80
-120
-160
-200-8 -6 -4 -2
ID (A)
VDS (V)
VGS = -10 V
VGS = 10 V
VGS = 0 V
SCTH100N65G2-7AGElectrical characteristics (curves)
DS12773 - Rev 1 page 7/15
3 Test circuits
Figure 17. Test circuit for resistive load switching times
AM01468v1
VD
RG
RL
D.U.T.
2200μF VDD
3.3μF+
pulse width
VGS
Figure 18. Test circuit for gate charge behavior
AM01469v1
47 kΩ1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
IG= CONST100 Ω
100 nF
D.U.T.
+pulse width
VGS
2200μF
VG
VDD
Figure 19. Test circuit for inductive load switching anddiode recovery times
AM01470v1
AD
D.U.T.S
B
G
25 Ω
A A
B B
RG
GD
S
100 µH
µF3.3 1000
µF VDD
D.U.T.
+
_
+
fastdiode
Figure 20. Unclamped inductive load test circuit
AM01471v1
VD
ID
D.U.T.
L
VDD+
pulse width
Vi
3.3µF
2200µF
Figure 21. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
Figure 22. Switching time waveform
AM01473v1
0
VGS 90%
VDS
90%
10%
90%
10%
10%
ton
td(on) tr
0
toff
td(off) tf
SCTH100N65G2-7AGTest circuits
DS12773 - Rev 1 page 8/15
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitionsand product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 H²PAK-7 package information
Figure 23. H²PAK-7 package outline
DM00249216_4
SCTH100N65G2-7AGPackage information
DS12773 - Rev 1 page 9/15
Table 7. H²PAK-7 package mechanical data
Dim.mm
Min. Max.
A 4.30 4.80
A1 0.03 0.20
C 1.17 1.37
e 2.34 2.74
e1 4.88 5.28
e2 7.42 7.82
E 0.45 0.60
F 0.50 0.70
H 10.00 10.40
H1 7.40 7.60
L 14.75 15.25
L1 1.27 1.40
L2 4.35 4.95
L3 6.85 7.25
M 1.90 2.50
R 0.20 0.60
V 0° 8°
Figure 24. H²PAK-7 recommended footprint
footprint_DM00249216_4
Note: Dimensions are in mm.
SCTH100N65G2-7AGH²PAK-7 package information
DS12773 - Rev 1 page 10/15
4.2 Packing information
Figure 25. Tape outline
P1A0 D1
P0
FW
E
D
B0K0
T
User direction of feed
P2
10 pitches cumulativetolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
Top covertape
AM08852v2
SCTH100N65G2-7AGPacking information
DS12773 - Rev 1 page 11/15
Figure 26. Reel outline
A
D
B
Full radius
Tape slotIn core for
Tape start
G measured
At hub
C
N
REEL DIMENSIONS
40 mm min.
Access hole
At slot location
T
Table 8. Tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3
SCTH100N65G2-7AGPacking information
DS12773 - Rev 1 page 12/15
Revision history
Table 9. Document revision history
Date Version Changes
27-Nov-2018 1 First release.
SCTH100N65G2-7AG
DS12773 - Rev 1 page 13/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1 H²PAK-7 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
SCTH100N65G2-7AGContents
DS12773 - Rev 1 page 14/15
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
SCTH100N65G2-7AG
DS12773 - Rev 1 page 15/15